Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/11/2014US20140252306 Monolithic three dimensional integration of semiconductor integrated circuits
09/11/2014DE112012005174T5 Bipolartransistorstruktur für reduzierte Stromverdichtung und Verfahren zu ihrer Herstellung Bipolar transistor structure for reduced power compression and process for their preparation
09/11/2014DE112012004985T5 Halbleitervorrichtung Semiconductor device
09/11/2014DE112012004934T5 FinFET mit verschmolzenen Rippen und vertikalem Silicid FinFET with fused ribs and vertical silicide
09/11/2014DE112011106054T5 Methoden der Bildung von Hetero-Schichten mit reduzierter Oberflachenrauhigkeit und Defektdichte auf ortsfremden Oberflächen und die dadurch entstehenden Strukturen Methods of formation of hetero-layers with reduced surface roughness and defect density on non-local surfaces and the resulting structures
09/11/2014DE112011106052T5 Verfahren zur Integration von dielektrischen Multigate-Transistoren in einen Tri-Gate-Prozess (FINFET) Method for the integration of multi-dielectric gate transistors in a tri-gate process (FinFET)
09/11/2014DE112011106031T5 Einaxial gespannte Nanodrahtstrukturen Uniaxially strained nanowire structures
09/11/2014DE112011106023T5 Nanodrahtstrukturen mit nicht diskreten Source- und Drain-Gebieten Nanowire structures with non-discrete source and drain regions
09/11/2014DE112011106006T5 Nanodrahtstrukturen mit Rundumkontakten Nanowire structures with round contacts
09/11/2014DE112011105995T5 Nicht-planare Rundum-Gate-Schaltung und deren Herstellungsverfahren Non-planar gate-all-around circuit, and their method of preparation
09/11/2014DE112011105987T5 Nichtplanarer III-N-Transistor Nonplanar III-N-transistor
09/11/2014DE102014203796A1 Kontaktgeometrie mit einer von einer Transistorlänge entkoppelten Gatesiliziumlänge Contact geometry with a decoupled from a transistor gate length silicon length
09/11/2014DE102014201446A1 Integrierte Schaltungen und Verfahren zum Herstellen integrierter Schaltungen mit Deckschichten zwischen Metallkontakten und Zwischenverbindungen Integrated circuits and methods for manufacturing integrated circuits with outer layers between metal contacts and interconnections
09/11/2014DE102013108147A1 Verfahren und Struktur für vertikalen Tunnel-Feldeffekttransistor und planare Vorrichtungen Method and structure for vertical tunnel field effect transistor and planar devices
09/11/2014DE102013104481A1 FinFETs mit verspannten Bereichen und Verfahren zu deren Herstellung FinFETs with strained areas and methods for their preparation
09/11/2014DE102013104368A1 Verfahren für die Ausbildung einer Verbindungsstruktur A method for forming an interconnection structure
09/11/2014DE102013104191A1 FinFET mit gerundetem Source/Drain-Profile FinFET with a rounded source / drain profiles
09/11/2014DE102012100234B4 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
09/10/2014EP2775529A2 Tunnel-effect transistor
09/10/2014EP2775528A1 Passivated III-V or Ge fin-shaped field effect transistor
09/10/2014EP2775527A2 Field effect transistor and semiconductor device using the same
09/10/2014EP2775526A2 Semiconductor substrate and semiconductor device
09/10/2014EP2774390A1 Embedded dielectric as a barrier in an acoustic device and method of manufacture
09/10/2014EP2774181A1 Apparatus and method for reset and stabilization control of a magnetic sensor
09/10/2014EP2774177A1 Method and apparatus for floating or applying voltage to a well of an integrated circuit
09/09/2014US8830773 Semiconductor device having compensation capacitance
09/09/2014US8830761 Method of reading and writing nonvolatile memory cells
09/09/2014US8830723 Method of driving nonvolatile semiconductor device
09/09/2014US8830720 Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
09/09/2014US8830653 Graphene mounted on aerogel
09/09/2014US8830413 Peeling method and method for manufacturing display device using the peeling method
09/09/2014US8830146 EL display device, driving method thereof, and electronic equipment provided with the EL display device
09/09/2014US8829999 Low noise amplifiers including group III nitride based high electron mobility transistors
09/09/2014US8829689 Module substrate with feature for replacement of faulty chips, semiconductor module having the same, and method for manufacturing the semiconductor module
09/09/2014US8829686 Package-on-package assembly including adhesive containment element
09/09/2014US8829685 Circuit device having funnel shaped lead and method for manufacturing the same
09/09/2014US8829684 Integrated circuit package
09/09/2014US8829683 Structures with through vias passing through a substrate comprising a planar insulating layer between semiconductor layers
09/09/2014US8829681 Semiconductor device having groove-shaped via-hole
09/09/2014US8829674 Stacked multi-chip package and method of making same
09/09/2014US8829672 Semiconductor package, package structure and fabrication method thereof
09/09/2014US8829668 Electronic device
09/09/2014US8829659 Integrated circuit
09/09/2014US8829658 Method of manufacturing nitride substrate, and nitride substrate
09/09/2014US8829657 Semiconductor substrate, semiconductor chip having the same, and stacked semiconductor package
09/09/2014US8829656 Semiconductor package including interposer with through-semiconductor vias
09/09/2014US8829655 Semiconductor package including a substrate and an interposer
09/09/2014US8829654 Semiconductor package with interposer
09/09/2014US8829652 Light emitting device with graded composition hole tunneling layer
09/09/2014US8829651 Nitride-based semiconductor substrate and semiconductor device
09/09/2014US8829650 Zener diode in a SiGe BiCMOS process and method of fabricating the same
09/09/2014US8829649 Semiconductor device having a resistive element including a TaSiN layer
09/09/2014US8829648 Package substrate and semiconductor package
09/09/2014US8829647 High temperature ALD process for metal oxide for DRAM applications
09/09/2014US8829644 Nonvolatile memory device and method of manufacturing the same
09/09/2014US8829643 Memory arrays
09/09/2014US8829642 Semiconductor device and method for manufacturing the same
09/09/2014US8829641 Method of forming a dual-trench field effect transistor
09/09/2014US8829640 Configuration and method to generate saddle junction electric field in edge termination
09/09/2014US8829631 Memory element and memory device
09/09/2014US8829630 Pressure sensor and method for manufacturing pressure sensor
09/09/2014US8829627 Dynamic quantity sensor device and manufacturing method of the same
09/09/2014US8829626 MEMS switches and fabrication methods
09/09/2014US8829624 Power device with monolithically integrated RC snubber
09/09/2014US8829622 Integrated circuit comprising an isolating trench and corresponding method
09/09/2014US8829621 Semiconductor substrate for manufacturing transistors having back-gates thereon
09/09/2014US8829620 Transistor with adjustable supply and/or threshold voltage
09/09/2014US8829619 Method for producing semiconductor device and semiconductor device
09/09/2014US8829618 ESD protection using diode-isolated gate-grounded NMOS with diode string
09/09/2014US8829617 Uniform finFET gate height
09/09/2014US8829615 MOS device and method of manufacturing the same
09/09/2014US8829613 Stepped dielectric for field plate formation
09/09/2014US8829612 Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers
09/09/2014US8829611 High voltage metal-oxide-semiconductor transistor device
09/09/2014US8829610 Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure
09/09/2014US8829609 Insulated gate semiconductor device with optimized breakdown voltage, and manufacturing method thereof
09/09/2014US8829608 Semiconductor device
09/09/2014US8829607 Fast switching super-junction trench MOSFETs
09/09/2014US8829606 Ditches near semiconductor fins and methods for forming the same
09/09/2014US8829605 Semiconductor device having deep and shallow trenches
09/09/2014US8829604 Semiconductor device, method of manufacturing the semiconductor device, and electronic device
09/09/2014US8829603 Shielded gate trench MOSFET package
09/09/2014US8829602 Integrated circuits and transistor design therefor
09/09/2014US8829601 Semiconductor device
09/09/2014US8829600 Power semiconductor device
09/09/2014US8829599 Semiconductor device and method of manufacturing the same
09/09/2014US8829598 Non-volatile memory device having three dimensional, vertical channel, alternately stacked gate electrode structure
09/09/2014US8829597 Nonvolatile memory device and method for fabricating the same
09/09/2014US8829596 Nonvolatile memory device and method of manufacturing the same
09/09/2014US8829595 3-Dimensional non-volatile memory device, memory system including the same, and method of manufacturing the device
09/09/2014US8829594 Nonvolatile programmable switches
09/09/2014US8829593 Semiconductor memory device having three-dimensionally arranged memory cells, and manufacturing method thereof
09/09/2014US8829592 Non-volatile storage element having dual work-function electrodes
09/09/2014US8829591 Ultrahigh density vertical NAND memory device
09/09/2014US8829589 Three-dimensional semiconductor memory device
09/09/2014US8829588 NVM bitcell with a replacement control gate and additional floating gate
09/09/2014US8829587 Flash memory device and manufacturing method of the same
09/09/2014US8829586 Semiconductor device and method for manufacturing semiconductor device having oxide semiconductor layer
09/09/2014US8829585 High density memory cells using lateral epitaxy
09/09/2014US8829582 Semiconductor device including memory cell having charge accumulation layer
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