Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/26/2010US20100213529 Semiconductor field-effect transistor, memory cell and memory device
08/26/2010US20100213528 Metal oxide semiconductor device and method for operating an array structure comprising the same devices
08/26/2010US20100213526 Nonvolatile semiconductor memory device and method of manufacturing the same
08/26/2010US20100213520 Semiconductor integrated circuit device and method of manufacturing the same
08/26/2010US20100213518 Impurity Doped UV Protection Layer
08/26/2010US20100213517 High voltage semiconductor device
08/26/2010US20100213516 Semiconductor substrate and semiconductor device
08/26/2010US20100213514 Metal structure for memory device
08/26/2010US20100213513 Hyperabrupt Diode Structure And Method For Making Same
08/26/2010US20100213512 High-Mobility Channel Devices on Dislocation-Blocking Layers
08/26/2010US20100213511 Lattice-Mismatched Semiconductor Structures and Related Methods for Device Fabrication
08/26/2010US20100213510 Bidirectional switch module
08/26/2010US20100213509 Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof
08/26/2010US20100213508 Semiconductor device
08/26/2010US20100213507 Lateral bipolar junction transistor
08/26/2010US20100213506 Component arrangement including a mos transistor having a field electrode
08/26/2010US20100213505 Semiconductor device and method for producing a semiconductor device
08/26/2010US20100213504 Lateral bipolar junction transistor
08/26/2010US20100213503 Biodirectional switch
08/26/2010US20100213470 Semiconductor device and manufacturing method of the same
08/26/2010US20100213466 Photosensors including semiconductor-on-insulator structure
08/26/2010US20100213465 Semiconductor component
08/26/2010US20100213463 Thin film transistor array substrate and method for manufacturing the same
08/26/2010US20100213462 Metal oxide structure and method for producing the same, and light-emitting element
08/26/2010US20100213461 Semiconductor device and manufacturing method thereof
08/26/2010US20100213460 Thin film transistor, method for manufacturing the same, and semiconductor device
08/26/2010US20100213459 Thin film transistor, manufacturing method therefor, and display apparatus using the same
08/26/2010US20100213458 Rigid semiconductor memory having amorphous metal oxide semiconductor channels
08/26/2010US20100213441 Modulation-doped halos in quantum well field-effect transistors, apparatus made therewith, and methods of using same
08/26/2010US20100213435 Switching device and nonvolatile memory device
08/26/2010US20100213434 Method of synthesizing nanowires
08/26/2010US20100213431 Treated Chalcogenide Layer for Semiconductor Devices
08/26/2010US20100212738 Solar cells
08/26/2010US20100212729 Epitaxial Growth of III-V Compounds on (111) Silicon for Solar Cells
08/26/2010US20100212728 Diode and Photovoltaic Device Using Carbon Nanostructure
08/26/2010DE112005002280B4 Verfahren zur Fertigung einer Halbleiterstruktur (U-Gate-Transistor) A method of manufacturing a semiconductor structure (U-gate transistor)
08/26/2010DE102010000354A1 Halbleitereinrichtungen Semiconductor devices
08/26/2010DE102009055322A1 Halbleitervorrichtung mit einem Transistor mit isoliertem Gate und Diode A semiconductor device comprising an insulated gate transistor and diode
08/26/2010DE102008059500B4 Verfahren zur Herstellung eines Mehr-Gatetransistors mit homogen silizidierten Stegendbereichen A process for producing a multi-gate transistor with silicided homogeneously Stegendbereichen
08/26/2010CA2752870A1 Low-noise parallel cascade of optical receivers
08/25/2010EP2221875A2 Multi finger MOS transistor
08/25/2010EP2221874A1 Method for manufacturing nano electronic devices made from 2D carbon crystals like graphene and devices obtained with this method
08/25/2010EP2221859A1 Semiconductor device and semiconductor device manufacturing method
08/25/2010EP2221858A1 Semiconductor device
08/25/2010EP2221852A1 Trench isolation for micromechanical devices
08/25/2010CN201562682U Novel voltage protective device
08/25/2010CN201562681U Negative angle moulding silicon controlled rectifier terminal of positive area and negative area table boards
08/25/2010CN1998088B Semiconductor on insulator substrate and devices formed therefrom
08/25/2010CN1988134B Method of erasing data and method of manufacturing nonvolatile semiconductor memory device
08/25/2010CN1983033B Mask pattern arrangement
08/25/2010CN1965412B Complimentary nitride transistors vertical and common drain
08/25/2010CN1950944B Quantum device, quantum logic device, method of driving quantum logic device, and logic circuit by quantum logic device
08/25/2010CN1769990B Thin film transistor array panel
08/25/2010CN1510755B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/25/2010CN101816069A Tunable voltage isolation ground to ground ESD clamp
08/25/2010CN101816060A Semiconductor substrate and semiconductor device
08/25/2010CN101814532A Semiconductor integrated circuit device and method of manufacturing the same
08/25/2010CN101814531A Capacitor composed by utilizing semiconductor PN junction capacitance and manufacturing method thereof
08/25/2010CN101814530A Semiconductor device and manufacturing method thereof
08/25/2010CN101814529A Thin film transistor, method for manufacturing the same, and semiconductor device
08/25/2010CN101814528A Semiconductor element with improved terminal and manufacturing method thereof
08/25/2010CN101814527A Power device and method for performing conductivity modulation by using photoelectron injection
08/25/2010CN101814526A Semiconductor device and method of manufacturing the same
08/25/2010CN101814525A ESD protecting method for fin field effect transistor(FinFET)
08/25/2010CN101814524A Alternating-doping profile for source/drain of a semiconductor device
08/25/2010CN101814523A Semiconductor device and a manufacturing approach with the same
08/25/2010CN101814521A Polysilicon plug bipolar transistor for phase change memory and method for manufacturing the same
08/25/2010CN101814513A Semiconductor device, CPU, image processing circuit and electronic device, and driving method of semiconductor device
08/25/2010CN101814510A Contactless SONOS (Silicon Oxide Nitride Oxide Semiconductor) split-grid type flash memory sharing word line
08/25/2010CN101814506A Composite storage medium floating-gate memory structure and manufacture method thereof
08/25/2010CN101814503A Complementary grid-controlled PNPN field effect transistor and preparation method thereof
08/25/2010CN101814502A Semiconductor device having dual metal gates and method of manufacture
08/25/2010CN101814500A Mesa thyristor surge suppressor chip and manufacturing method thereof
08/25/2010CN101814499A N-P complementary schottky diode structure
08/25/2010CN101814497A Semiconductor device
08/25/2010CN101814496A Weather-proof micro-trigger controlled silicon and manufacturing method thereof
08/25/2010CN101814492A Integrated circuit having metal gate stacks and manufacture method thereof
08/25/2010CN101814464A Silicon controlled thyristor device micro slot group composite phase change integrated cooling heat dissipation method and device
08/25/2010CN101814457A High mobility channel device on the dislocation barrier layer
08/25/2010CN101814437A Semiconductor device and method of manufacturing the same
08/25/2010CN101814433A Lateral bipolar junction transistor and method for manufacturing the same
08/25/2010CN101552284B npn type InGaAs/InP DHBT epitaxial layer structure
08/25/2010CN101552192B Method for manufacturing Sic MOS capacitor
08/25/2010CN101494222B Semiconductor memory device, semiconductor memory array and read-in method
08/25/2010CN101425538B Metal-gated mosfet devices having scaled gate stack thickness
08/25/2010CN101414637B Groove insulation cross-over gate heterojunction field effect transistor
08/25/2010CN101410942B Symmetrical mim capacitor design
08/25/2010CN101405870B Field effect transistor with gate insulation layer formed by using amorphous oxide film
08/25/2010CN101405858B Method to produce transistor having reduced gate height
08/25/2010CN101399288B LDMOS chip light doped drift region structure and forming method
08/25/2010CN101320751B HEMT device and manufacturing method thereof
08/25/2010CN101288176B Traverse type IGBT of SOI groove
08/25/2010CN101263589B Semiconductor device making method and semiconductor making device
08/25/2010CN101228635B Power semiconductor device
08/25/2010CN101211979B Transistor, fabricating method thereof and flat panel display
08/25/2010CN101202257B Semiconductor device
08/25/2010CN101150057B Thin film semiconductor device and manufacturing method for the same
08/25/2010CN101127368B Gallium nitride based diodes with low forward voltage and low reverse current operation
08/25/2010CN101095239B High temperature electronic device
08/24/2010US7784050 Temperature management system for a multiple core chip
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