Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/08/2010CN101350301B Semiconductor device and method for fabricating the same
09/08/2010CN101339958B Semiconductor device and manufacturing method of the semiconductor device
09/08/2010CN101325217B Semiconductor structure
09/08/2010CN101320747B Charge transmission device, solid pick-up device and electronic information equipment
09/08/2010CN101313386B Manufacturing method of Mos transistor with better short channel effect control
09/08/2010CN101304042B Semiconductor device and method for fabricating the same
09/08/2010CN101295735B Nonvolatile semiconductor memory device
09/08/2010CN101276107B Liquid crystal display device with sensing function and method of fabricaging the same
09/08/2010CN101273458B Enhancement mode III-nitride FET
09/08/2010CN101268553B Light emitting devices
09/08/2010CN101160664B Compressive SIGE <110> growth and structure of mosfet device and its manufacture method
09/08/2010CN101128923B Control gate profile for flash technology
09/08/2010CN101068031B Semiconductor device
09/08/2010CN101044608B Metal-oxide-semiconductor device with a doped titanate body
09/07/2010USRE41625 Semiconductor device and method of fabricating the same
09/07/2010US7791823 Substrate with recess portion for microlens, microlens substrate, transmissive screen, rear type projector, and method of manufacturing substrate with recess portion for microlens
09/07/2010US7791691 Reflective type liquid crystal display device and fabricating method thereof
09/07/2010US7791681 Thin film transistor array substrate for liquid crystal display
09/07/2010US7791679 Alternative thin film transistors for liquid crystal displays
09/07/2010US7791576 Signal dividing circuit and semiconductor device
09/07/2010US7791573 forming multiple layer of copper and molybdenum on a substrate;forming a photoresist pattern on the multiple layer; andetching with a solution containing H2O2, anorganic acid; a phosphate; first and second nitrogen-containing additives; fluoriine compound; andde-ionized water; liquid crystal displays
09/07/2010US7791373 Semiconductor device and display device
09/07/2010US7791308 Semiconductor element and electrical apparatus
09/07/2010US7791211 Flip chip package structure and carrier thereof
09/07/2010US7791208 Power semiconductor arrangement
09/07/2010US7791204 Semiconductor device and method of manufacturing the same
09/07/2010US7791202 Semiconductor device having oxidized metal film and manufacture method of the same
09/07/2010US7791190 Substrate with crystal silicon array
09/07/2010US7791176 Power semiconductor component with trench-type second contact region
09/07/2010US7791174 Wafer translator having a silicon core isolated from signal paths by a ground plane
09/07/2010US7791172 Nonvolatile semiconductor memory device
09/07/2010US7791171 Semiconductor device and method of manufacturing the same
09/07/2010US7791169 Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors
09/07/2010US7791168 Techniques for providing decoupling capacitance
09/07/2010US7791166 Formation of dummy features and inductors in semiconductor fabrication
09/07/2010US7791165 Planar inductor and method of manufacturing it
09/07/2010US7791163 Semiconductor device and its manufacturing method
09/07/2010US7791162 Trench isolation structure, semiconductor assembly comprising such a trench isolation, and method for forming such a trench isolation
09/07/2010US7791161 Semiconductor devices employing poly-filled trenches
09/07/2010US7791160 High-performance FET device layout
09/07/2010US7791159 Solid-state imaging device and method for fabricating the same
09/07/2010US7791152 Magnetic tunnel junction transistor
09/07/2010US7791150 Room temperature hydrogen sensor
09/07/2010US7791149 Integrated circuit including a dielectric layer
09/07/2010US7791148 Semiconductor device
09/07/2010US7791147 MOS device resistant to ionizing radiation
09/07/2010US7791146 a source/drain pattern of Si-Ge may be formed to fill a recess region formed at opposite sides adjacent to a gate electrode, thus the source/drain pattern may supply a compressive force to a channel region below the gate electrode to increase the mobility of carriers migrating along the channel region
09/07/2010US7791143 Semiconductor constructions
09/07/2010US7791141 Field-enhanced programmable resistance memory cell
09/07/2010US7791138 Semiconductor component and method
09/07/2010US7791137 High voltage metal oxide semiconductor device
09/07/2010US7791136 Trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts
09/07/2010US7791134 Power semiconductor device and manufacturing method therefor
09/07/2010US7791133 Semiconductor device with reduced gate-overlap capacitance and method of forming the same
09/07/2010US7791132 High-voltage vertical transistor with a multi-gradient drain doping profile
09/07/2010US7791131 Semiconductor device and a method of manufacturing the same
09/07/2010US7791130 Non-volatile memory device and methods of forming the same
09/07/2010US7791129 Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface density
09/07/2010US7791128 Double gate non-volatile memory device and method of manufacturing
09/07/2010US7791127 Semiconductor memory and method for manufacturing a semiconductor memory
09/07/2010US7791126 Non-volatile memory device
09/07/2010US7791122 Semiconductor memory device
09/07/2010US7791120 Circuit device and manufacturing method thereof
09/07/2010US7791119 Electro-resistance element and electro-resistance memory using the same
09/07/2010US7791117 Image sensor and image sensor integrated type active matrix type display device
09/07/2010US7791114 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
09/07/2010US7791113 CMOS image sensor and pixel of the same
09/07/2010US7791110 Integrated circuit having gates and active regions forming a regular grating
09/07/2010US7791107 strain-inducing substrate, a first tensilely strained layer, a compressively strained layer on the first tensilely strained layer, a second tensilely strained layer on compressively strained layer; first and second tensilely strained layers formed of Si, and the compressively strained layer formed of Ge
09/07/2010US7791106 Gallium nitride material structures including substrates and methods associated with the same
09/07/2010US7791105 Device structures for a high voltage junction field effect transistor manufactured using a hybrid orientation technology wafer and design structures for a high voltage integrated circuit
09/07/2010US7791103 Group III nitride semiconductor substrate
09/07/2010US7791101 Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
09/07/2010US7791097 Nitride semiconductor device and manufacturing method of the same
09/07/2010US7791090 GaN based LED having reduced thickness and method for making the same
09/07/2010US7791088 Electro-optical device with connecting conductive film provided opposite to an end of an interlayer conductive film with insulating sidewall, the conductive film electrically connecting a pixel electrode to a lower electrode and method for making the same
09/07/2010US7791085 Semiconductor light emitting apparatus
09/07/2010US7791080 Image TFT array of a direct X-ray image sensor and method of fabricating the same
09/07/2010US7791079 Semiconductor device and method of manufacturing the same
09/07/2010US7791078 Liquid crystal display
09/07/2010US7791077 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
09/07/2010US7791076 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
09/07/2010US7791075 Display device and manufacturing method thereof
09/07/2010US7791074 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
09/07/2010US7791069 heating a metal-free monobicycloporphyrin compound or a copper complex thereof, to effect conversion to a monobenzoporphyrin compound; high field-effect mobility
09/07/2010US7791068 Vertical organic light emitting transistor assembly and horizontal organic light emitting transistor assembly
09/07/2010US7791064 Semiconductor device and fabrication method thereof
09/07/2010US7791063 High hole mobility p-channel Ge transistor structure on Si substrate
09/07/2010US7791062 Nitride semiconductor light emitting device and fabrication method thereof
09/07/2010US7791061 External extraction light emitting diode based upon crystallographic faceted surfaces
09/07/2010US7791060 Semiconductor memory device and method of controlling the same
09/07/2010US7791058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
09/07/2010US7791057 Memory cell having a buried phase change region and method for fabricating the same
09/07/2010US7790627 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film
09/07/2010US7790625 Method for manufacturing semiconductor device
09/07/2010US7790579 Semiconductor storage device, semiconductor device, and manufacturing method therefor
09/07/2010US7790570 Method of manufacturing a semiconductor device
09/07/2010US7790557 Method of manufacturing silicon carbide semiconductor device
09/07/2010US7790556 Integration of high k gate dielectric
09/07/2010US7790554 Method of manufacturing semiconductor integrated circuit device with high and low breakdown-voltage MISFETs