Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/05/2010US20100197050 Method of forming semiconductor thin film and inspection device of semiconductor thin film
08/05/2010US20100196627 Plasma processing method and computer storage medium
08/05/2010US20100195381 Switchable element
08/05/2010US20100195033 Semiconductor device and manufacturing method thereof
08/05/2010US20100195032 Light sensing element, array substrate having the same and liquid crystal display apparatus having the same
08/05/2010US20100195013 Liquid crystal display device and manufacturing method thereof
08/05/2010US20100195012 Semiconductor device and method of fabricating the same
08/05/2010US20100195009 Transflective liquid crystal display device and fabricating method thereof
08/05/2010US20100194719 Thin-film transistor, manufacturing method thereof, and electronic apparatus using thin-film transistor
08/05/2010US20100194450 Thin-film transistor circuit, driving method thereof, and light-emitting display apparatus
08/05/2010US20100194438 Semiconductor device
08/05/2010US20100194407 MEMS sensor
08/05/2010US20100193917 Methods of isolating array features during pitch doubling processes and semiconductor device structures having isolated array features
08/05/2010US20100193915 Plasma processing apparatus and plasma processing method, and semiconductor device
08/05/2010US20100193913 Method for producing semiconductor device
08/05/2010US20100193912 Methods and apparatus for the manufacture of microstructures
08/05/2010US20100193911 IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N
08/05/2010US20100193910 Iii nitride structure and method for manufacturing iii nitride semiconductor fine columnar crystal
08/05/2010US20100193909 Thermally enhanced semiconductor devices
08/05/2010US20100193908 Fusion bonding process and structure for fabricating silicon-on-insulation (soi) semiconductor devices
08/05/2010US20100193907 Capacitor structure in a semiconductor device
08/05/2010US20100193899 Precise oxide dissolution
08/05/2010US20100193898 Method for forming trench isolation using gas cluster ion beam processing
08/05/2010US20100193896 Method for nitridation of shallow trench isolation structure to prevent oxygen absorption
08/05/2010US20100193895 Depletable cathode low charge storage diode
08/05/2010US20100193891 In-Situ Formed Capping Layer in MTJ Devices
08/05/2010US20100193890 Magnetic domain wall random access memory
08/05/2010US20100193889 Magnetic random access memory and method of manufacturing the same
08/05/2010US20100193888 Magnetic Tunnel Junction (MTJ) Storage Element and Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) Cells Having an MJT
08/05/2010US20100193887 Stress-Distribution Detecting Semiconductor Package Group And Detection Method Of Stress Distribution In Semiconductor Package Using The Same
08/05/2010US20100193886 Mems sensor, and mems sensor manufacturing method
08/05/2010US20100193885 Condenser microphone
08/05/2010US20100193884 Method of Fabricating High Aspect Ratio Transducer Using Metal Compression Bonding
08/05/2010US20100193883 Semiconductor device and method of manufacturing the same
08/05/2010US20100193882 In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
08/05/2010US20100193881 Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy
08/05/2010US20100193878 High speed, low power consumption, isolated analog cmos unit
08/05/2010US20100193876 METHOD TO REDUCE MOL DAMAGE ON NiSi
08/05/2010US20100193870 Techniques for improving transistor-to-transistor stress uniformity
08/05/2010US20100193867 Silicided Semiconductor Structure and Method of Forming the Same
08/05/2010US20100193865 Dmos transistor and method of manufacturing the same
08/05/2010US20100193864 Semiconductor device
08/05/2010US20100193863 Semiconductor device and method for fabricating the same
08/05/2010US20100193862 Semiconductor device and method of manufacturing the same
08/05/2010US20100193861 Three-Dimensional Memory Device
08/05/2010US20100193860 Short channel transistor with reduced length variation by using amorphous electrode material during implantation
08/05/2010US20100193859 Blocking dielectric engineered charge trapping memory cell with high speed erase
08/05/2010US20100193858 Nand memory device with inversion bit lines and methods for making the same
08/05/2010US20100193857 Nonvolatile semiconductor memory device and method for manufacturing the same
08/05/2010US20100193855 Non-volatile semiconductor memory device and method of manufacturing same
08/05/2010US20100193854 Non-volatile memory device using hot-carrier injection
08/05/2010US20100193853 Semiconductor devices and structures including at least partially formed container capacitors and methods of forming the same
08/05/2010US20100193850 Semiconductor memory device
08/05/2010US20100193847 Metal gate transistor with barrier layer
08/05/2010US20100193846 Semiconductor device with strain
08/05/2010US20100193843 Manufacture method of multilayer structure having non-polar a-plane iii-nitride layer
08/05/2010US20100193842 Semiconductor device and method of manufacturing the same
08/05/2010US20100193841 Method for forming resist pattern and method for manufacturing a semiconductor device
08/05/2010US20100193839 III-V-Group compound semiconductor device
08/05/2010US20100193838 Epitaxial semiconductor layer and method
08/05/2010US20100193837 Semiconductor Device
08/05/2010US20100193836 Semiconductor device
08/05/2010US20100193835 Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes
08/05/2010US20100193833 Nitride-Based Semiconductor Device, Light Apparatus, and Method of Manufacturing Nitride-Based Semiconductor Device
08/05/2010US20100193801 Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same
08/05/2010US20100193800 Semiconductor device
08/05/2010US20100193799 Semiconductor device and method of manufacturing semiconductor device
08/05/2010US20100193798 Source follower circuit or bootstrap circuit, driver circuit comprising such circuit, and display device comprising such driver circuit
08/05/2010US20100193797 Stacked transistors and electronic devices including the same
08/05/2010US20100193796 Semiconductor device
08/05/2010US20100193795 Large-grain crystalline thin-film structures and devices and methods for forming the same
08/05/2010US20100193793 Circuit board and display device
08/05/2010US20100193792 Laminated film manufacturing method, semiconductor device manufacturing method, semiconductor device and display device
08/05/2010US20100193789 Semiconductor device and manufacturing method thereof
08/05/2010US20100193788 Area sensor and display apparatus provided with an area sensor
08/05/2010US20100193785 Semiconductor device
08/05/2010US20100193784 Thin-film transistor and display device
08/05/2010US20100193783 Semiconductor device and method for manufacturing the same
08/05/2010US20100193782 Transistor and method for manufacturing the transistor
08/05/2010US20100193781 Micromechanical structure and a method of fabricating a micromechanical structure
08/05/2010US20100193780 Method of forming memory cell using gas cluster ion beams
08/05/2010US20100193772 Thin film transistor and display device
08/05/2010US20100193771 Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
08/05/2010US20100193770 Maskless Process for Suspending and Thinning Nanowires
08/05/2010US20100193768 Semiconducting nanowire arrays for photovoltaic applications
08/05/2010US20100193767 Encapsulated nanoparticles
08/05/2010US20100193766 Process for Producing a PN Homojunction in a Nanostructure
08/05/2010US20100193758 Programmable metallization memory cell with planarized silver electrode
08/05/2010US20100193002 Semiconductor component, method for the production thereof, and use thereof
08/05/2010DE19655407B4 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
08/05/2010DE19630334B4 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
08/05/2010DE102009047639A1 Halbleiterelement und ein Verfahren zum Herstellen desselben Of the same semiconductor element and a method for producing
08/05/2010DE102008029868B4 Halbleiterbauteil und Herstellungsverfahren desselben Semiconductor device and manufacturing method thereof
08/05/2010DE102005038441B4 Feldeffekthalbleiterbauelement und Verfahren zur Herstellung desselben Field-effect semiconductor device and method of manufacturing the same
08/05/2010DE102004064122B4 MOS-Transistor mit erhöhter Source-/Drain-Struktur MOS transistor with an elevated source / drain structure
08/05/2010DE102004052617B4 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement mit Halbleitergebieten, die unterschiedlich verformte Kanalgebiete aufweisen Have process for producing a semiconductor device and semiconductor device comprising semiconductor regions, the channel regions different deformed
08/05/2010DE102004013405B4 Leistungshalbleiterbauelement mit optimiertem Randbereich Power semiconductor component with optimized peripheral region
08/04/2010EP2214313A1 Spin valve element, and its driving method
08/04/2010EP2214198A2 Isolated complementary MOS devices in EPI-less substrate
08/04/2010EP2212913A1 Systems and methods for preparation of epitaxially textured thick films
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