Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/16/2010US20100230740 Nonvolatile semiconductor memory device and manufacturing method thereof
09/16/2010US20100230739 Non-volatile semiconductor memory device and process of manufacturing the same
09/16/2010US20100230738 Nor flash memory structure with highly-doped drain region and method of manufacturing the same
09/16/2010US20100230735 Deep Trench Capacitor on Backside of a Semiconductor Substrate
09/16/2010US20100230734 Semiconductor device and arrangement method of compensation capacitor of semiconductor device
09/16/2010US20100230732 Field effect transistor with air gap dielectric
09/16/2010US20100230731 Circuitry and method
09/16/2010US20100230727 Electric Circuit with Vertical Contacts
09/16/2010US20100230724 Methods for forming three-dimensional memory devices, and related structures
09/16/2010US20100230723 High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate
09/16/2010US20100230722 High electron mobility field effect transistor (hemt) device
09/16/2010US20100230721 Semiconductor device and manufacturing method of semiconductor device
09/16/2010US20100230718 Semiconductor device and method for producing a semiconductor device
09/16/2010US20100230716 Semiconductor device
09/16/2010US20100230715 Semiconductor device and method for producing a semiconductor device
09/16/2010US20100230690 Group iii nitride semiconductor device, epitaxial substrate, and method of fabricating group iii nitride semiconductor device
09/16/2010US20100230687 Iii nitride electronic device and iii nitride semiconductor epitaxial substrate
09/16/2010US20100230684 Semiconductor device
09/16/2010US20100230679 Contact portion of wire and manufacturing method thereof
09/16/2010US20100230678 Semiconductor device and manufacturing method thereof
09/16/2010US20100230677 Thin film transistor and manufacturing method thereof
09/16/2010US20100230676 Tft array substrate and method for manufacturing the same
09/16/2010US20100230671 Zno-based semiconductor and zno-based semiconductor device
09/16/2010US20100230658 Apparatus and methods for improving parallel conduction in a quantum well device
09/16/2010US20100230656 Light emitting structure and method of manufacture thereof
09/16/2010US20100229651 Cointegrated mems sensor and method
09/16/2010DE10351237B4 Verfahren zur Herstellung eines Transistors mit erhöhten und/oder verspannten Drain- und Sourcegebieten und Transistor A method of manufacturing a transistor with raised and / or strained drain and source regions and transistor
09/16/2010DE102009039516A1 Feldeffekttransistor und Verfahren zu dessen Herstellung Field effect transistor and method of producing the
09/16/2010DE102009010882A1 Transistor mit einer eingebetteten Halbleiterlegierung in Drain- und Sourcegebieten, die sich unter die Gateelektrode erstreckt Transistor having an embedded semiconductor alloy in drain and source regions extending under the gate electrode
09/16/2010DE102006033505B4 Halbleitervorrichtung mit reduziertem "Tail"-Widerstand und Herstellungsverfahren für eine solche A semiconductor device with reduced "tail" resistance and manufacturing method for such a
09/16/2010DE102006003932B4 Feldeffekthalbleiterbauelement mit einem Minoritätsladungsträger emittierenden Sourcegebiet in eine Bodyzone Field effect semiconductor device emitting a minority carrier source region in a body zone
09/16/2010DE102005035699B4 Halbleiterleistungsbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben Of the same semiconductor power device having charge compensation structure and method for producing
09/16/2010DE102005004411B4 Verfahren für die Herstellung eines in-situ-gebildeten Halo-Gebietes in einem Transistorelement A process for the preparation of in-situ-formed halo region in a transistor element
09/16/2010DE102004011203B4 Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung A method for mounting semiconductor chips and corresponding semiconductor chip system
09/15/2010EP1907992B1 Semiconductor device
09/15/2010EP1194960B1 Nanoscopic wire-based devices, arrays, and methods of their manufacture
09/15/2010CN201584417U Thyristor die structure
09/15/2010CN1998072B Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing
09/15/2010CN1738059B Semiconductor device and method of manufacturing the same
09/15/2010CN1638540B 有机电致发光显示器件 Organic electroluminescent display device
09/15/2010CN101836298A Ultra thin single crystalline semiconductor TFT and process for making same
09/15/2010CN101836281A Semiconductor device of SOI (silicon on insulator) structure, and its manufacturing method
09/15/2010CN101834213A 半导体可变电容 Semiconductor variable capacitance
09/15/2010CN101834212A Transistor device of crystallized thin film
09/15/2010CN101834211A Polycrystalline silicon thin film based on metal induction
09/15/2010CN101834210A PNPN (Positive-Negative-Positive-Negative) field effect transistor of sinking channel and preparation method thereof
09/15/2010CN101834209A Power MOS (Metal Oxide Semiconductor) device with groove and manufacturing method thereof
09/15/2010CN101834208A Power MOS (Metal Oxide Semiconductor) field effect tube with low conduction resistance and manufacturing method
09/15/2010CN101834207A Double-diffusion metal oxide semiconductor field effect tube structure and manufacturing method thereof
09/15/2010CN101834206A Semiconductor device structure and forming method thereof
09/15/2010CN101834205A Semiconductor device and manufacturing method thereof
09/15/2010CN101834204A Semiconductor device and manufacturing method thereof
09/15/2010CN101834203A Semiconductor device and method of manufacturing semiconductor device
09/15/2010CN101834202A N-type lateral insulated gate bipolar device capable of reducing hot carrier effect
09/15/2010CN101834189A Image display system
09/15/2010CN101834187A Embedded non-volatile memory
09/15/2010CN101834184A Substrate-triggered GGNMOS (Grounded-Grid N-Metal-Oxide-Semiconductor) tube
09/15/2010CN101834183A Semiconductor structure
09/15/2010CN101834182A Grid coupling NMOS (Negative-channel Metal-Oxide Semiconductor) tube modulated by dynamic grid resistance
09/15/2010CN101834181A SCR (Silicon Controlled Rectifier) circuit with auxiliary triggering of NMOS (N-channel Metal Oxide Semiconductor)
09/15/2010CN101834179A 电子装置 Electronic devices
09/15/2010CN101834142A Method for manufacturing flute with thick insulating bottom and semiconductor device thereof
09/15/2010CN101834141A Preparation method of asymmetrical source drain field effect transistor
09/15/2010CN101834140A Thin film transistor and manufacturing method thereof
09/15/2010CN101834135A Bipolar transistor and manufacturing method thereof
09/15/2010CN101834134A Method for enhancing quality factor of metal-oxide semiconductor variable capacitance diode
09/15/2010CN101834124A Manufacturing method of polysilicon thin film material based on annealing process
09/15/2010CN101833203A TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and manufacturing method thereof
09/15/2010CN101830426A MEMS sensor, MEMS sensor manufacturing method, and electronic device
09/15/2010CN101504954B High voltage power fast recovery diode and manufacturing method thereof
09/15/2010CN101405848B Transistor device having an increased threshold stability without drive current degradation
09/15/2010CN101385148B Shielded gate trench (sgt) mosfet cells implemented with a schottky source contact
09/15/2010CN101350392B P type nitride semiconductor Ohm contact electrode with nano pattern and preparation method thereof
09/15/2010CN101335203B Layered structure and its manufacturing method
09/15/2010CN101322250B Method for forming semiconductor device and multi-operational mode transistor
09/15/2010CN101299441B Thin-film transistor, thin-film transistor array substrate, display panel and optoelectronic device
09/15/2010CN101271897B Semiconductor device
09/15/2010CN101257039B Semiconductor structure and manufacturing method thereof
09/15/2010CN101140366B Sensing-objects touching pixel unit, method and display apparatus thereof
09/15/2010CN101079426B Structure and method of sub-gate AND architectures employing bandgap engineered SONOS devices
09/14/2010USRE41693 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers
09/14/2010USRE41670 Sram cell fabrication with interlevel Dielectric planarization
09/14/2010US7797660 Semiconductor integrated circuit for controlling substrate bias
09/14/2010US7796969 Symmetrically and asymmetrically stacked transistor group RF switch
09/14/2010US7796204 Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same
09/14/2010US7795739 Semiconductor device, method of manufacturing the same
09/14/2010US7795738 Nitride semiconductor device
09/14/2010US7795737 Methods of redistributing bondpad locations on an integrated circuit
09/14/2010US7795736 Interconnects with interlocks
09/14/2010US7795735 Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
09/14/2010US7795734 Semiconductor device and method of manufacturing the same
09/14/2010US7795733 Semiconductor device having aerial wiring and manufacturing method thereof
09/14/2010US7795731 Semiconductor devices including a topmost metal layer with at least one opening and their methods of fabrication
09/14/2010US7795730 A first conductive layer of a high-melting point metal is in contact with an insulating layer by droplet discharge; a second conductive layer of silver, gold, copper, or indium tin oxide in contact with the first conductive layer,has improved adhesiveness with the insulating layer; antipeeling agents
09/14/2010US7795717 Electronic component embedded within a plastic compound and including copper columns within the plastic compound extending between upper and lower rewiring layers, and system carrier and panel for producing an electronic component
09/14/2010US7795707 High voltage switching devices and process for forming same
09/14/2010US7795706 Stacked memory without unbalanced temperature distributions
09/14/2010US7795702 Microelectronic assemblies with improved isolation voltage performance
09/14/2010US7795699 Semiconductor device
09/14/2010US7795696 Modular magnetoresistive memory
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