Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/02/2010DE102009011349A9 Halbleiterbauelement mit inhärenten Kapazitäten und Verfahren zur Herstellung desselben Of the same semiconductor device with inherent capacity and process for preparing
09/02/2010DE102009010883A1 Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der Transistorherstellung mittels eines Zwischenoxidationsprozesses Setting a non-silicon content in a semiconductor alloy during transistor fabrication by means of an intermediate oxidation process
09/02/2010DE102009010846A1 Erhöhen der Integrität eines Gatestapels mit großem ε durch Einschluss einer Metalldeckschicht nach der Abscheidung Increasing the integrity of a gate stack with large ε by including a metal coating layer after deposition
09/02/2010DE102006024504B4 Leistungshalbleiterbauelement mit vertikaler Gatezone und Verfahren zur Herstellung desselben Power semiconductor component having a vertical gate zone of the same and processes for preparing
09/01/2010EP2224508A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
09/01/2010EP2224490A1 Control substrate and control substrate manufacturing method
09/01/2010EP2224489A1 Semiconductor device
09/01/2010EP2224478A1 Semiconductor device and method for manufacturing semiconductor devicedispositif à semi-conducteurrs et procédé de fabrication d'un dispositif à semi-conducteurs
09/01/2010EP2224024A1 Highly pure lanthanum, sputtering target comprising highly pure lanthanum, and metal gate film mainly composed of highly pure lanthanum
09/01/2010EP2223918A1 Conjugated compound, nitrogenated condensed-ring compound, nitrogenated condensed-ring polymer, organic thin film, and organic thin film element
09/01/2010EP2223342A1 Diode
09/01/2010CN201570501U N-type super-junction lateral double-diffused semiconductor metal oxide transistor
09/01/2010CN201570500U P-type super-junction lateral double-diffused semiconductor metal oxide transistor
09/01/2010CN201570499U LDMOS device with transverse-diffusion buried layer under grid
09/01/2010CN201570498U Single-arm bridge type automobile rectifying diode
09/01/2010CN1998089B Wide bandgap field effect transistors with source connected field plates
09/01/2010CN1977387B High mobility tri-gate devices and fabrication methods thereof
09/01/2010CN1913132B Nonvolatile semiconductor integrated circuit devices and fabrication methods thereof
09/01/2010CN1894796B Process for fabricating thin film integrated circuit device, noncontact thin film integrated circuit device and its fabrication process
09/01/2010CN1854867B Liquid crystal display device and method for fabricating the same
09/01/2010CN1848455B Semiconductor device and method of manufacturing the same
09/01/2010CN1745468B Large-area nanoenabled macroelectronic substrates and uses therefor
09/01/2010CN1618722B Mems having a three-wafer structure
09/01/2010CN1540720B Beam radiating device, its radiating method and manufacturing method of semiconductor device
09/01/2010CN101821868A Nanowire electronic devices and method for producing the same
09/01/2010CN101821861A Fabrication of phosphor free red and white nitride-based leds
09/01/2010CN101821853A Semiconductor device and manufacturing method thereof
09/01/2010CN101821852A Cascode current sensor for discrete power semiconductor devices
09/01/2010CN101821840A Thin film active element, organic light emitting device, display device, electronic device and method for manufacturing thin film active element
09/01/2010CN101821839A Profile engineered thin film devices and structures
09/01/2010CN101821313A Polymer compound and polymer light-emitting device using the same
09/01/2010CN101821211A Method of fastening lamellae of a lamellar material to suitable substrate
09/01/2010CN101819999A Multilayer film structure for transverse induced crystallization of low-temperature poly-silicon film
09/01/2010CN101819998A High voltage low power consumption SOI LDMOS transistor having strained silicon structure
09/01/2010CN101819997A LDMOS device capable of improving rebound performance and manufacturing method thereof
09/01/2010CN101819996A Semiconductor structure
09/01/2010CN101819995A GaN-based MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and preparation method thereof
09/01/2010CN101819994A Sige heterojunction bipolar transistor and preparation method thereof
09/01/2010CN101819993A P type lateral insulated gate bipolar device for reducing hot carrier effect
09/01/2010CN101819992A Rectifier grain, production method thereof and suction cup mould
09/01/2010CN101819991A 半导体器件 Semiconductor devices
09/01/2010CN101819988A Organic light-emitting display device and method for manufacturing the same
09/01/2010CN101819980A Solid-state image sensor, method of manufacturing the same, and image pickup apparatus
09/01/2010CN101819978A Non-contact nano-crystalline split-gate flash memory for sharing word line
09/01/2010CN101819976A Semiconductor device and a manufacturing method thereof
09/01/2010CN101819975A Vertical channel dual-grate tunneling transistor and preparation method thereof
09/01/2010CN101819974A Groove type metal oxide semiconductor transistor
09/01/2010CN101819973A High voltage and current metal oxide semiconductor circuit structure
09/01/2010CN101819971A Thin film transistor for liquid crystal display
09/01/2010CN101819937A Method for manufacturing lateral double-diffused metal oxide semiconductor transistor
09/01/2010CN101819936A Improved transistor devices and method of making
09/01/2010CN101819929A Method for manufacturing and separating floating gate of grid storage
09/01/2010CN101819928A Replacement metal gate transistors with reduced gate oxide leakage
09/01/2010CN101819922A Metal-insulator-metal capacitor and preparation method thereof
09/01/2010CN101819360A Liquid crystal display device and manufacturing method therefor
09/01/2010CN101506966B DRAM transistor with recessed gates and methods of fabricating the same
09/01/2010CN101488523B High voltage P type SOI MOS transistor
09/01/2010CN101488458B Method of manufacturing semiconductor device and semiconductor device
09/01/2010CN101473443B Structure and method for forming a shielded gate trench FET with the shield and gate electrodes being connected together
09/01/2010CN101431330B NOR gate logic circuit and its forming method
09/01/2010CN101375399B MOS device and method of fabricating a MOS device
09/01/2010CN101364602B Blocking dielectric engineered charge trapping memory cell with high speed erase
09/01/2010CN101335276B Semiconductor device and manufacturing method thereof
09/01/2010CN101311804B Pixel elements of LCD and display unit
09/01/2010CN101305467B 多量子阱器件 A multiple quantum well device
09/01/2010CN101300679B Method of manufacturing a semiconductor device
09/01/2010CN101253608B Process for forming an electronic device including discontinuous storage elements
09/01/2010CN101215684B Ferroelectric film, semiconductor device, ferroelectric film manufacturing method, and ferroelectric film manufacturing apparatus
09/01/2010CN101006592B Functional molecule element and functional molecule apparatus
08/2010
08/31/2010US7788391 Using a threshold value to control mid-interrupt polling
08/31/2010US7787296 Nonvolatile semiconductor memory device having protection function for each memory block
08/31/2010US7787277 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
08/31/2010US7787093 Array substrate for a liquid crystal display device with thin film transistor having two drain electrode patterns and manufacturing method of the same
08/31/2010US7787039 MOS sensor and drive method thereof
08/31/2010US7787033 Apparatus and method for determining temperature of an active pixel imager and correcting temperature induced variations in an imager
08/31/2010US7786986 Image display device
08/31/2010US7786665 Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency
08/31/2010US7786593 Integrated circuit die with pedestal
08/31/2010US7786590 Semiconductor package with improved size, reliability, warpage prevention, and heat dissipation and method for manufacturing the same
08/31/2010US7786588 Composite interconnect structure using injection molded solder technique
08/31/2010US7786579 Apparatus for crack prevention in integrated circuit packages
08/31/2010US7786578 Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure
08/31/2010US7786577 Component with chip through-contacts
08/31/2010US7786562 Stackable semiconductor chip layer comprising prefabricated trench interconnect vias
08/31/2010US7786550 P-type semiconductor and semiconductor hetero material and manufacturing methods thereof
08/31/2010US7786549 Antifuse structure and system for closing thereof
08/31/2010US7786547 Formation of active area using semiconductor growth process without STI integration
08/31/2010US7786544 Area sensor and display apparatus provided with an area sensor
08/31/2010US7786541 Semiconductor pressure sensor and its fabrication method
08/31/2010US7786539 Dieletric film layered product
08/31/2010US7786535 Design structures for high-voltage integrated circuits
08/31/2010US7786533 High-voltage vertical transistor with edge termination structure
08/31/2010US7786532 Structure of a high breakdown voltage element for use in high power application
08/31/2010US7786531 MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification
08/31/2010US7786530 Vertical field-effect transistor
08/31/2010US7786529 Semiconductor device and method of fabricating the same
08/31/2010US7786528 new and improved trench MOSFET cell and manufacture process to minimize the copper wire bonding damage to semiconductor device without additional cost
08/31/2010US7786527 Sub-lithographic gate length transistor using self-assembling polymers
08/31/2010US7786526 Nonvolatile semiconductor memory device
08/31/2010US7786525 Nonvolatile semiconductor memory device
1 ... 663 664 665 666 667 668 669 670 671 672 673 674 675 676 677 678 679 680 681 682 683 ... 2182