Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/21/2010US7800108 Semiconductor device and method of manufacturing semiconductor device including optical test pattern above a light shielding film
09/21/2010US7800106 Test structure for OPC-related shorts between lines in a semiconductor device
09/21/2010US7800104 Array substrate for liquid crystal display device and method of fabricating the same
09/21/2010US7800102 Organic thin film transistor including a self-assembly monolayer between an insulating layer and an organic semiconductor layer and flat panel display comprising the same
09/21/2010US7800099 Light emitting device, electronic equipment, and organic polarizing film
09/21/2010US7800097 Semiconductor device including independent active layers and method for fabricating the same
09/21/2010US7800096 Light emitting semiconductor
09/21/2010US7800091 Nonvolatile semiconductor memory device and manufacturing method thereof
09/21/2010US7800053 Method of evaluating ion irradiation effect, process simulator and device simulator
09/21/2010US7799690 Method for fabricating semiconductor integrated circuit device
09/21/2010US7799682 Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
09/21/2010US7799680 Surface preparation prior to deposition on germanium
09/21/2010US7799674 Ruthenium alloy film for copper interconnects
09/21/2010US7799673 Semiconductor device manufacturing method
09/21/2010US7799667 Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode
09/21/2010US7799664 Method for selective epitaxial growth of source/drain areas
09/21/2010US7799662 Power semiconductor device with soft switching characteristic and manufacturing method for same
09/21/2010US7799654 Reduced refractive index and extinction coefficient layer for enhanced photosensitivity
09/21/2010US7799636 Power device with trenches having wider upper portion than lower portion
09/21/2010US7799631 Multiple-layer dielectric layer and method for fabricating capacitor including the same
09/21/2010US7799621 Method of manufacturing thin film transistor array substrate and display device
09/21/2010US7799620 Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device
09/21/2010US7799610 Method of fabricating a stacked die having a recess in a die BGA package
09/21/2010US7799609 Method of manufacturing dual orientation wafers
09/21/2010US7799590 Semiconductor device and manufacturing method thereof
09/21/2010US7799586 Semiconductor light emitting devices including a luminescent conversion element and methods for packaging the same
09/21/2010US7799515 Method of fabricating semiconductor device, and developing apparatus using the method
09/21/2010US7799439 electrode modification layer is made of thermally evaporable small molecule fluorocarbon compounds selected from C60F18, C60F22, C60F30, C60F36, C60F40, C60F48, C70F11, OR C70F15; pentacene organic active layer disposed in between anode and cathode
09/21/2010US7799407 Bank structure, wiring pattern forming method, device, electro-optical device, and electronic apparatus
09/21/2010US7798702 Light unit display
09/21/2010CA2370869C A field effect transistor of sic for high temperature application, use of such a transistor and a method for production thereof
09/16/2010WO2010105178A2 Gated diode having at least one lightly-doped drain (ldd) implant blocked and circuits and methods employing same
09/16/2010WO2010104918A1 Three-dimensional memory array comprising vertical switches having three terminals
09/16/2010WO2010104857A2 Process for forming an electroactive layer
09/16/2010WO2010104703A1 Flexible packaging for chip-on-chip and package-on-package technologies
09/16/2010WO2010104637A1 Method for fabricating semiconductor components using maskless back side alignment to conductive vias
09/16/2010WO2010104403A1 Prevention of crack propagation in brittle materials
09/16/2010WO2010104241A1 Tvs-grade zener diode and manufacturing method thereof
09/16/2010WO2010104145A1 Semiconductor memory device and method of producing same
09/16/2010WO2010104131A1 Conjugated compound, and organic thin film and organic thin film element each comprising same
09/16/2010WO2010104118A1 Branched compound, and organic thin film and organic thin film element each comprising same
09/16/2010WO2010104064A1 Mems sensor
09/16/2010WO2010104042A1 Fluoropolymer and thin organic film comprising same
09/16/2010WO2010104037A1 Polymer, organic thin film comprising the polymer, and organic thin-film element including same
09/16/2010WO2010104005A1 Method for manufacturing thin film transistor, and thin film transistor
09/16/2010WO2010103935A1 Method for manufacturing semiconductor device
09/16/2010WO2010103906A1 Thin film transistor
09/16/2010WO2010103820A1 Method for manufacturing silicon carbide semiconductor device
09/16/2010WO2010103802A1 Semiconductor device and method for manufacturing same
09/16/2010WO2010103714A1 Semiconductor device and method for producing the same
09/16/2010WO2010103687A1 Semiconductor device and method for manufacturing same
09/16/2010WO2010103592A1 Semiconductor device and method for manufacturing same
09/16/2010WO2010103587A1 THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER
09/16/2010WO2010085304A3 Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby
09/16/2010WO2010074927A3 Stability enhancements in metal oxide semiconductor thin film transistors
09/16/2010WO2010074906A3 Group iii-v devices with delta-doped layer under channel region
09/16/2010WO2010065835A3 Backplane structures for solution processed electronic devices
09/16/2010WO2010065823A3 Backplane structures for solution processed electronic devices
09/16/2010US20100233539 Method of etching a silicon-based material
09/16/2010US20100233426 Noble metal single crystalline nanowire and the fabrication method thereof
09/16/2010US20100232235 Memory Device Having Buried Boosting Plate and Methods of Operating the Same
09/16/2010US20100232225 Semiconductor storage device
09/16/2010US20100232219 Micromagnetic Elements, Logic Devices And Related Methods
09/16/2010US20100232215 MRAM with coupling valve switching
09/16/2010US20100232077 Gated diode having at least one lightly-doped drain (ldd) implant blocked and circuits and methods employing same
09/16/2010US20100231287 Thermal compensation of an exponential pair
09/16/2010US20100230821 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
09/16/2010US20100230786 Production of integrated circuits comprising semiconductor incompatible materials
09/16/2010US20100230785 Inductively coupled integrated circuit and methods for use therewith
09/16/2010US20100230783 Semiconductor device
09/16/2010US20100230782 Semiconductor device
09/16/2010US20100230779 Trench generated device structures and design structures for radiofrequency and bicmos integrated circuits
09/16/2010US20100230778 Method of fabricating a flash memory and an isolating structure applied to a flash memory
09/16/2010US20100230777 Selective sti stress relaxation through ion implantation
09/16/2010US20100230776 Semiconductor structure and method of manufacture
09/16/2010US20100230775 Termination for a superjunction device
09/16/2010US20100230774 Diode Having High Breakdown Voltage and Low on-Resistance
09/16/2010US20100230770 Magnetoresistive element and magnetoresistive random access memory including the same
09/16/2010US20100230769 Magnetoresistive element, magnetic random access memory and method of manufacturing the same
09/16/2010US20100230768 Semiconductor device with integrated piezoelectric elements and support circuitry
09/16/2010US20100230767 Mems sensor, mems sensor manufacturing method, and electronic device
09/16/2010US20100230766 Sensor device and method
09/16/2010US20100230765 Integrated circuit system employing stress memorization transfer
09/16/2010US20100230764 Integrated circuit having field effect transistors and manufacturing method
09/16/2010US20100230762 integrated circuit using finfets and having a static random access memory (sram)
09/16/2010US20100230757 Hybrid STI Gap-Filling Approach
09/16/2010US20100230756 Semiconductor device with selectively modulated gate work function
09/16/2010US20100230755 Process for producing an mos transistor and corresponding integrated circuit
09/16/2010US20100230753 Lateral hyperabrupt junction varactor diode in an soi substrate
09/16/2010US20100230752 Soi (silicon on insulator) substrate improvements
09/16/2010US20100230751 Self-aligned schottky diode
09/16/2010US20100230750 Power semiconductor device
09/16/2010US20100230748 Semiconductor device and method of manufacturing the same
09/16/2010US20100230747 Process for manufacturing a power device with a trench-gate structure and corresponding device
09/16/2010US20100230746 Semiconductor device and manufacturing method thereof
09/16/2010US20100230745 Power semiconductor device
09/16/2010US20100230744 Reliable memory cell
09/16/2010US20100230743 Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applications
09/16/2010US20100230742 Non-volatile semiconductor memory device
09/16/2010US20100230741 Semiconductor devices with an air gap in trench isolation dielectric
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