Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/19/2010US20100207254 Strained semiconductor materials, devices and methods therefore
08/19/2010US20100207253 Semiconductor device and manufacturing method thereof
08/19/2010US20100207249 Wafer including a reinforcing flange formed upright at a periphery and method for manufacturing the same
08/19/2010US20100207248 Patterns of Semiconductor Device and Method of Forming the Same
08/19/2010US20100207247 Semiconductor Integrated Circuit Device and Method of Fabricating the Same
08/19/2010US20100207246 Method of making an mim capacitor and mim capacitor structure formed thereby
08/19/2010US20100207245 Highly scalable trench capacitor
08/19/2010US20100207244 Semiconductor apparatus with decoupling capacitor
08/19/2010US20100207243 Semiconductor device and method of fabricating the same
08/19/2010US20100207242 Capacitive element, designing method of the same and integrated circuit device including the same
08/19/2010US20100207241 Semiconductor device including contact plug and associated methods
08/19/2010US20100207240 Semiconductor device and method for manufacturing same
08/19/2010US20100207238 Semiconductor Devices and Methods of Manufacture Thereof
08/19/2010US20100207235 Semiconductor device and method for manufacturing the same
08/19/2010US20100207234 Semiconductor device and wire bonding method
08/19/2010US20100207233 High power device isolation and integration
08/19/2010US20100207232 Gallium Nitride Semiconductor Device With Improved Forward Conduction
08/19/2010US20100207229 Non-planar microcircuit structure and method of fabricating same
08/19/2010US20100207221 Magnetic Random Access Memory
08/19/2010US20100207220 Ultrafast magnetic recording element and nonvolatile magnetic random access memory using the magnetic recording element
08/19/2010US20100207219 Single line mram
08/19/2010US20100207218 Electronic component device, and method of manufacturing the same
08/19/2010US20100207217 Micro-Electro-Mechanical System Having Movable Element Integrated into Substrate-Based Package
08/19/2010US20100207216 Corrosion-resistant mems component and method for the production thereof
08/19/2010US20100207214 Semiconductor device and method of fabricating the same
08/19/2010US20100207212 Method for producing semiconductor device and semiconductor device produced by same method
08/19/2010US20100207211 Semiconductor device
08/19/2010US20100207210 Semiconductor devices
08/19/2010US20100207209 Semiconductor device and producing method thereof
08/19/2010US20100207208 Nanowire mesh device and method of fabricating same
08/19/2010US20100207207 Semiconductor structure
08/19/2010US20100207206 Transistor
08/19/2010US20100207204 Semiconductor device and method of fabricating the same
08/19/2010US20100207203 Semiconductor device with buried gate and method for fabricating the same
08/19/2010US20100207202 Semiconductor device and method of manufacturing the same
08/19/2010US20100207201 Semiconductor device and production method therefor
08/19/2010US20100207200 Semiconductor device
08/19/2010US20100207199 Semiconductor device and production method therefor
08/19/2010US20100207198 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
08/19/2010US20100207197 Semiconductor device and method of manufacturing the same
08/19/2010US20100207196 Semiconductor device having internal gate structure and method for manufacturing the same
08/19/2010US20100207195 Non-volatile semiconductor storage device and method of manufacturing the same
08/19/2010US20100207192 Non-volatile semiconductor memory device and manufacturing method thereof
08/19/2010US20100207191 Method and device employing polysilicon scaling
08/19/2010US20100207190 Nonvolatile semiconductor memory device and method for manufacturing the same
08/19/2010US20100207189 Non-volatile memory device with reduced write-erase cycle time
08/19/2010US20100207188 Semiconductor device and method of fabricating the same
08/19/2010US20100207187 Nonvolatile semiconductor memory device
08/19/2010US20100207186 Nonvolatile semiconductor memory device and method of manufacturing the same
08/19/2010US20100207185 Nonvolatile Memory Device and Method of Manufacturing the Same
08/19/2010US20100207184 Semiconductor devices and methods of forming the same
08/19/2010US20100207183 SRAM Cell with Asymmetrical Pass Gate
08/19/2010US20100207182 Implementing Variable Threshold Voltage Transistors
08/19/2010US20100207177 Method for producing a copper contact
08/19/2010US20100207176 Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same
08/19/2010US20100207175 Semiconductor transistor device having an asymmetric embedded stressor configuration, and related manufacturing method
08/19/2010US20100207174 Seminconductor structure and fabrication method thereof
08/19/2010US20100207173 Asymmetric junction field effect transistor
08/19/2010US20100207172 Semiconductor structure and method of fabricating the semiconductor structure
08/19/2010US20100207171 Method for sodium ion selective electrode, sodium ion selective electrode therefrom and sodium ion sensing device
08/19/2010US20100207168 Cross-Point Memory Structures, And Methods Of Forming Memory Arrays
08/19/2010US20100207167 Compound semiconductor device including ain layer of controlled skewness
08/19/2010US20100207166 Gallium Nitride Heterojunction Schottky Diode
08/19/2010US20100207165 Semiconductor device and method for fabricating the same
08/19/2010US20100207164 Field effect transistor
08/19/2010US20100207162 Vertical and trench type insulated gate mos semiconductor device
08/19/2010US20100207161 Device and Method for Coupling First and Second Device Portions
08/19/2010US20100207138 III Nitride Semiconductor Crystal, III Nitride Semiconductor Device, and Light Emitting Device
08/19/2010US20100207137 Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device
08/19/2010US20100207136 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
08/19/2010US20100207126 MOS-Driver Compatible JFET Structure with Enhanced Gate Source Characteristics
08/19/2010US20100207125 Semiconductor device and method for manufacturing the same
08/19/2010US20100207124 Compound semiconductor device including ain layer of controlled skewness
08/19/2010US20100207122 Thin film transistor array substrate and manufacturing method thereof
08/19/2010US20100207121 Thin film transistor substrate and display device
08/19/2010US20100207120 Production method of semiconductor device and semiconductor device
08/19/2010US20100207119 Semiconductor device including a transistor, and manufacturing method of the semiconductor device
08/19/2010US20100207118 Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
08/19/2010US20100207117 Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
08/19/2010US20100207116 Substrate for the epitaxial growth of gallium nitride
08/19/2010US20100207103 Method of Forming Nanotube Vertical Field Effect Transistor
08/19/2010US20100207102 Static random access memories having carbon nanotube thin films
08/19/2010US20100207101 Incorporating gate control over a resonant tunneling structure in cmos to reduce off-state current leakage, supply voltage and power consumption
08/19/2010US20100207100 Radiation-Emitting Semiconductor Body
08/19/2010US20100207033 X-ray detector and fabrication method thereof
08/19/2010DE112006002626B4 Halbleitersubstrat und Verfahren zu dessen Herstellung Semiconductor substrate and process for its preparation
08/19/2010DE10338986B4 SRAM-Bauelement SRAM component
08/19/2010DE10326771B4 Integrierte Speicherschaltung und Verfahren zum Bilden einer integrierten Speicherschaltung An integrated circuit memory and method of forming an integrated circuit memory
08/19/2010DE10308313B4 Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren Semiconductor diode, electronic component, voltage source inverter and control method
08/19/2010DE102010001720A1 Einkristallines SiC-Substrat, einkristalliner epitaktischer SiC-Wafer und SiC-Halbleitervorrichtung Single crystal SiC substrate, a single-crystal epitaxial SiC wafer and the SiC semiconductor device
08/19/2010DE102010001290A1 Bipolartransistor mit Basis-Kollektor-Isolation ohne Dielektrikum Bipolar transistor base-collector isolation without dielectric
08/19/2010DE102009042391A1 Halbleitervorrichtung Semiconductor device
08/19/2010DE102008056390A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
08/19/2010DE102007025336B4 Halbleiterbauelement und Verfahren für die Verformungserzeugung in siliziumbasierten Transistoren durch Anwendung von Implantationstechniken zur Herstellung einer verformungs-induzierenden Schicht unter dem Kanalgebiet A semiconductor device and method for generating the deformation in silicon-based transistors by using implantation techniques for the production of a strain-inducing layer below the channel region
08/19/2010DE102004053394B4 Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung A semiconductor device and method of manufacturing a semiconductor device
08/19/2010DE102004031441B4 Verfahren zum Herstellen einer Schicht aus kristallinem Silicium, Verfahren zum Herstellen einer aktiven Schicht aus einer solchen Schicht, Verfahren zum Herstellen eines Schaltelements aus einer solchen aktiven Schicht sowie Schaltelement mit einer Schicht aus kristallinem Silicium A method for producing a layer of crystalline silicon, methods of making an active layer made of such a layer, methods of making a switching element of such an active layer, and switching element with a layer of crystalline silicon
08/18/2010EP2219225A1 Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor
08/18/2010EP2219224A1 Semiconductor device
08/18/2010EP2219215A1 Semiconductor device and method for manufacturing the same
08/18/2010EP2219210A1 Semiconductor device
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