Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/22/2010EP2230685A2 Semiconductor element, and method of forming silicon-based film
09/22/2010EP2230684A2 Integrated circuit arrangement with low-resistance contacts and method for production thereof
09/22/2010EP2229723A1 Resonant body transistor and oscillator
09/22/2010EP2229696A1 Integrated iii-nitride power converter circuit
09/22/2010EP2229695A2 Monolithically integrated antenna- and receiver circuit for the detection of terahertz waves
09/22/2010EP2229690A1 Process for forming a wire portion in an integrated electronic circuit
09/22/2010EP1470592B1 Boron phosphide based semiconductor device
09/22/2010EP1273045B1 Diode and method for producing the same
09/22/2010CN1941406B Method of forming a self-aligned transistor and structure therefor
09/22/2010CN1906764B Gradient deposition of low-k cvd materials
09/22/2010CN1856841B Nonvolatile semiconductor memory device having protection function for each memory block
09/22/2010CN1797773B Tft array substrate and the fabrication method thereof
09/22/2010CN101842904A Thin film active element group, thin film active element array, organic light emitting device, display device and method for manufacturing thin film active element group
09/22/2010CN101842903A Semiconductor device and method for manufacturing the same
09/22/2010CN101842902A Semiconductor structure and method of manufacture
09/22/2010CN101842884A III nitride electronic device and III nitride semiconductor epitaxial substrate
09/22/2010CN101842878A Semiconductor device and method for manufacturing the same
09/22/2010CN101842827A Active matrix substrate, method for manufacturing same, and liquid crystal display apparatus
09/22/2010CN101842317A A deposit and electrical devices comprising the same
09/22/2010CN101840996A Printed semiconductor transistor and forming method thereof
09/22/2010CN101840938A Gallium nitride heterojunction schottky diode
09/22/2010CN101840937A Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
09/22/2010CN101840936A Semiconductor device including a transistor, and manufacturing method of the semiconductor device
09/22/2010CN101840935A SOI (Silicon-on-insulator) MOSFET lateral (metal-oxide-semiconductor field effect transistor) device
09/22/2010CN101840934A Bottom-drain LDMOS power MOSFET structure having a top drain strap
09/22/2010CN101840933A Super-junction metal oxide field effect transistor with surface buffering ring terminal structure
09/22/2010CN101840932A Semiconductor device and method for manufacturing the same
09/22/2010CN101840931A High-voltage metal-dielectric-semiconductor device and method of the same
09/22/2010CN101840920A Semiconductor structure and forming method thereof
09/22/2010CN101840919A Vts insulated gate bipolar transistor
09/22/2010CN101840918A Silicon controlled rectifier electro-static discharge protective circuit structure triggered by diode
09/22/2010CN101840916A Integrated circuit having field effect transistors and manufacturing method
09/22/2010CN101840891A Semiconductor structures, and methods of manufacturing the same.
09/22/2010CN101840887A Semi-conductor device and formation method thereof
09/22/2010CN101840865A Manufacturing method of thin film transistor and transistor manufactured by method
09/22/2010CN101840864A Semiconductor device and manufacturing method thereof
09/22/2010CN101840863A Semiconductor field effect transistors and fabrication thereof
09/22/2010CN101523631B Organic thin film transistor device and organic thin film light-emitting transistor
09/22/2010CN101488459B Production method for self-aligned metallic oxide thin-film transistor
09/22/2010CN101473420B Stripping composition, TFT substrate manufacturing method, and stripping composition recycling method
09/22/2010CN101431027B High voltage semiconductor device and method for manufacturing the same
09/22/2010CN101339955B Gate sensitive triggering unidirectional controlled silicon chip and production method thereof
09/22/2010CN101142687B Semiconductor device and process with improved perfomance
09/22/2010CN101083282B Semiconductor device having sub-surface trench charge compensation regions and method
09/22/2010CN101083280B Semiconductor device and method for producing the same
09/21/2010USRE41719 Power MOSFET with integrated drivers in a common package
09/21/2010US7801192 Monitoring method and VCSEL array with monitoring function
09/21/2010US7800300 Organic electroluminescent display device having electroluminescent transistors and methods of manufacturing the device
09/21/2010US7800241 organosilicon and organometallic compounds within adhesion promoter layer having nanoscale ceramic grains applied wet-chemically
09/21/2010US7800240 Under bump metallurgy structure and wafer structure using the same and method of manufacturing wafer structure
09/21/2010US7800239 Thick metal interconnect with metal pad caps at selective sites and process for making the same
09/21/2010US7800238 Surface depressions for die-to-die interconnects and associated systems and methods
09/21/2010US7800233 Semiconductor device and method of manufacturing the same
09/21/2010US7800230 Solder preform and electronic component
09/21/2010US7800226 Integrated circuit with metal silicide regions
09/21/2010US7800204 Semiconductor device and method of fabricating the same
09/21/2010US7800202 Semiconductor device
09/21/2010US7800201 Thinned wafer having stress dispersion parts and method for manufacturing semiconductor package using the same
09/21/2010US7800196 Semiconductor structure with an electric field stop layer for improved edge termination capability
09/21/2010US7800189 Microfabricated capacitive ultrasonic transducer
09/21/2010US7800186 Semiconductor device and method of fabricating metal gate of the same
09/21/2010US7800184 Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact
09/21/2010US7800183 Semiconductor device
09/21/2010US7800181 Semiconductor device and method for fabricating the same
09/21/2010US7800178 Semiconductor device and method for manufacturing the same
09/21/2010US7800176 Electronic circuit for controlling a power field effect transistor
09/21/2010US7800175 Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regions
09/21/2010US7800174 Power semiconductor switching-device and semiconductor power module using the device
09/21/2010US7800173 Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture
09/21/2010US7800172 Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures
09/21/2010US7800170 Power MOSFET device with tungsten spacer in contact hole and method
09/21/2010US7800169 Power MOS device
09/21/2010US7800168 Power semiconductor device
09/21/2010US7800166 Recessed channel array transistor (RCAT) structures and method of formation
09/21/2010US7800165 Semiconductor device and method for producing the same
09/21/2010US7800164 Nanocrystal non-volatile memory cell and method therefor
09/21/2010US7800162 Nonvolatile memory device and method of fabricating the same
09/21/2010US7800160 Semiconductor device with a nitride film between a pair of oxide films
09/21/2010US7800159 Array of contactless non-volatile memory cells
09/21/2010US7800157 Method for manufacturing semiconductor device and semiconductor device
09/21/2010US7800156 Asymmetric single poly NMOS non-volatile memory cell
09/21/2010US7800154 Nonvolatile semiconductor memory device with twin-well
09/21/2010US7800153 Capacitive electrode having semiconductor layers with an interface of separated grain boundaries
09/21/2010US7800152 Methods for manufacturing a finfet using a conventional wafer and apparatus manufactured therefrom
09/21/2010US7800151 Semiconductor integrated circuit and method of designing semiconductor integrated circuit
09/21/2010US7800143 Dynamic random access memory with an amplified capacitor
09/21/2010US7800141 Electronic device including a semiconductor fin
09/21/2010US7800138 Semiconductor device including thermally dissipating dummy pads
09/21/2010US7800135 Power semiconductor device and method of manufacturing a power semiconductor device
09/21/2010US7800134 CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein
09/21/2010US7800133 Semiconductor device and manufacturing method of the same
09/21/2010US7800132 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
09/21/2010US7800131 Field effect transistor
09/21/2010US7800130 Semiconductor devices
09/21/2010US7800128 Semiconductor ESD device and method of making same
09/21/2010US7800121 Light emitting diode component
09/21/2010US7800115 Semiconductor device and method of manufacturing same
09/21/2010US7800114 Semiconductor device and manufacturing method thereof
09/21/2010US7800113 Method for manufacturing display device
09/21/2010US7800109 Thin film transistor with electrodes resistant to oxidation and erosion