Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/03/2010US7768044 Metal capacitor stacked with a MOS capacitor to provide increased capacitance density
08/03/2010US7768042 Thin film transistor including titanium oxides as active layer and method of manufacturing the same
08/03/2010US7768033 Single-chip common-drain JFET device and its applications
08/03/2010US7768029 LED lamp
08/03/2010US7768027 Semiconductor light-emitting device
08/03/2010US7768024 Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
08/03/2010US7768021 Light emitting element array and image forming apparatus
08/03/2010US7768020 AC light emitting diode
08/03/2010US7768017 Silicon carbide semiconductor device and manufacturing method therefor
08/03/2010US7768016 Carbon diode array for resistivity changing memories
08/03/2010US7768014 Memory device and manufacturing method thereof
08/03/2010US7768013 Vertical structure thin film transistor
08/03/2010US7768011 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
08/03/2010US7768010 Poly crystalline silicon semiconductor device and method of fabricating the same
08/03/2010US7768009 Display device and manufacturing method of the same
08/03/2010US7768007 Information device
08/03/2010US7768003 Formation of p-n homogeneous junctions
08/03/2010US7767999 Microelectronic device such as a flexible thin film field-effect transistor made of a polythiophene in which some of the rings are alkyl- or alkoxy-substitued, e.g., poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-dithiophene]
08/03/2010US7767998 OFETs with active channels formed of densified layers
08/03/2010US7767997 Semiconductor device with solid electrolyte switching
08/03/2010US7767995 Single-electron tunnel junction for complementary metal-oxide device and method of manufacturing the same
08/03/2010US7767993 Resistance change memory device
08/03/2010US7767992 Multi-layer chalcogenide devices
08/03/2010US7767590 Semiconductor device with spacer having batch and non-batch layers
08/03/2010US7767559 Process for fabricating semiconductor device
08/03/2010US7767558 Method of crystallizing amorphous silicon and device fabricated using the same
08/03/2010US7767536 Semiconductor device and fabricating method thereof
08/03/2010US7767535 Semiconductor device and method of manufacturing the same
08/03/2010US7767532 Method for manufacturing an EEPROM cell
08/03/2010US7767530 Transistor having recess channel and fabricating method thereof
08/03/2010US7767528 Field effect transistor and fabrication method
08/03/2010US7767507 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
08/03/2010US7767506 Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask
08/03/2010US7767504 Methods for forming film patterns by disposing a liquid within a plural-level partition structure
08/03/2010US7767503 Hybrid SOI/bulk semiconductor transistors
08/03/2010US7767502 Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate
08/03/2010US7767500 Superjunction device with improved ruggedness
08/03/2010US7767499 Method to form upward pointing p-i-n diodes having large and uniform current
08/03/2010US7767100 Patterning method and field effect transistors
08/03/2010US7765870 Acceleration sensor and method of manufacturing the same
08/03/2010US7765690 Process for fabricating electronic components and electronic components obtained by this process
07/2010
07/29/2010WO2010085304A2 Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby
07/29/2010WO2010085299A1 A patterned electrically conductive and optically transparent layer over semiconductor device
07/29/2010WO2010085227A1 Semiconductor memristor devices
07/29/2010WO2010085226A1 Using alloy electrodes to dope memristors
07/29/2010WO2010085225A1 Controlled placement of dopants in memristor active regions
07/29/2010WO2010084960A1 Aromatic compound and method for producing same
07/29/2010WO2010084727A1 Field effect transistor and method for manufacturing same
07/29/2010WO2010084725A1 Semiconductor device, method for manufacturing same, and display device
07/29/2010WO2010084657A1 Semiconductor device, method for manufacturing semiconductor device, and liquid crystal device
07/29/2010WO2010084534A1 Thin film diode and method for manufacturing same
07/29/2010WO2010065334A3 Semiconductor devices with current shifting regions and related methods
07/29/2010WO2010065163A3 Highly polarized white light source
07/29/2010US20100191083 Engineered conductive polymer films to mediate biochemical interactions
07/29/2010US20100190281 Organic electroluminescent device, method of manufacturing the same, and electronic apparatus
07/29/2010US20100189154 Semiconductor optical device
07/29/2010US20100188905 Spin Device
07/29/2010US20100188901 Three-Terminal Single Poly NMOS Non-Volatile Memory Cell
07/29/2010US20100188895 Staggered stram cell
07/29/2010US20100188893 Heat assisted switching and separated read-write MRAM
07/29/2010US20100188890 Magnetoresistance effect element and magnetic random access memory
07/29/2010US20100188073 Methods and apparatus for measuring analytes using large scale fet arrays
07/29/2010US20100188069 Sensors using high electron mobility transistors
07/29/2010US20100187662 Method for forming silicon film, method for forming pn junction and pn junction formed using the same
07/29/2010US20100187661 Sintered Silicon Wafer
07/29/2010US20100187660 Method To Create SOI Layer For 3D-Stacking Memory Array
07/29/2010US20100187658 Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography
07/29/2010US20100187657 Bipolar transistor with base-collector-isolation without dielectric
07/29/2010US20100187656 Bipolar Junction Transistors and Methods of Fabrication Thereof
07/29/2010US20100187655 Integrated Circuit Capacitors Having Composite Dielectric Layers Therein Containing Crystallization Inhibiting Regions and Methods of Forming Same
07/29/2010US20100187654 Semiconductor device having capacitor and method of fabricating the same
07/29/2010US20100187653 Semiconductor device
07/29/2010US20100187652 Method and structures of monolithically integrated esd suppression device
07/29/2010US20100187650 Insulated well with a low stray capacitance for electronic components
07/29/2010US20100187649 Charge reservoir structure
07/29/2010US20100187646 Ultra low pressure sensor and method of fabrication of same
07/29/2010US20100187645 Semiconductor device and method for fabricating the same
07/29/2010US20100187644 Manufacturing method of semiconductor device
07/29/2010US20100187643 Method for tuning the threshold voltage of a metal gate and high-k device
07/29/2010US20100187642 Semiconductor component and method of manufacture
07/29/2010US20100187641 High performance mosfet
07/29/2010US20100187634 Channelized Gate Level Cross-Coupled Transistor Device with Cross-Coupled Transistors Defined on Four Gate Electrode Tracks with Crossing Gate Electrode Connections
07/29/2010US20100187633 Channelized Gate Level Cross-Coupled Transistor Device with Cross-Coupled Transistors Defined on Two Gate Electrode Tracks with Crossing Gate Electrode Connections
07/29/2010US20100187632 Channelized Gate Level Cross-Coupled Transistor Device with Complimentary Pairs of Cross-Coupled Transistors Defined by Physically Separate Gate Electrodes within Gate Electrode Level
07/29/2010US20100187631 Channelized Gate Level Cross-Coupled Transistor Device with Constant Gate Electrode Pitch
07/29/2010US20100187630 Channelized Gate Level Cross-Coupled Transistor Device with Connection Between Cross-Coupled Transistor Gate Electrodes Made Utilizing Interconnect Level Other than Gate Electrode Level
07/29/2010US20100187629 Tensile strain source using silicon/germanium in globally strained silicon
07/29/2010US20100187628 Channelized Gate Level Cross-Coupled Transistor Device with Overlapping PMOS Transistors and Non-Overlapping NMOS Transistors Relative to Direction of Gate Electrodes
07/29/2010US20100187627 Channelized Gate Level Cross-Coupled Transistor Device with Overlapping PMOS Transistors and Overlapping NMOS Transistors Relative to Direction of Gate Electrodes
07/29/2010US20100187626 Channelized Gate Level Cross-Coupled Transistor Device with Direct Electrical Connection of Cross-Coupled Transistors to Common Diffusion Node
07/29/2010US20100187625 Linear Gate Level Cross-Coupled Transistor Device with Cross-Coupled Transistors Defined on Four Gate Electrode Tracks with Crossing Gate Electrode Connections
07/29/2010US20100187624 Linear Gate Level Cross-Coupled Transistor Device with Cross-Coupled Transistors Defined on Three Gate Electrode Tracks with Crossing Gate Electrode Connections
07/29/2010US20100187623 Linear Gate Level Cross-Coupled Transistor Device with Cross-Coupled Transistors Defined on Two Gate Electrode Tracks with Crossing Gate Electrode Connections
07/29/2010US20100187622 Linear Gate Level Cross-Coupled Transistor Device with Complimentary Pairs of Cross-Coupled Transistors Defined by Physically Separate Gate Electrodes within Gate Electrode Level
07/29/2010US20100187621 Linear Gate Level Cross-Coupled Transistor Device with Constant Gate Electrode Pitch
07/29/2010US20100187620 Linear Gate Level Cross-Coupled Transistor Device with Connection Between Cross-Coupled Transistor Gate Electrodes Made Utilizing Interconnect Level Other than Gate Electrode Level
07/29/2010US20100187619 Linear Gate Level Cross-Coupled Transistor Device with Different Width PMOS Transistors and Different Width NMOS Transistors
07/29/2010US20100187618 Linear Gate Level Cross-Coupled Transistor Device with Overlapping PMOS Transistors and Non-Overlapping NMOS Transistors Relative to Direction of Gate Electrodes
07/29/2010US20100187617 Linear Gate Level Cross-Coupled Transistor Device with Non-Overlapping PMOS Transistors and Overlapping NMOS Transistors Relative to Direction of Gate Electrodes
07/29/2010US20100187616 Linear Gate Level Cross-Coupled Transistor Device with Overlapping PMOS Transistors and Overlapping NMOS Transistors Relative to Direction of Gate Electrodes
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