Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/18/2010EP2219209A2 Method of forming insulating film and method of producing semiconductor device
08/18/2010EP2218681A2 Applications of Nano-Enabled Large Area Macroelectronic Substrates Incorporating Nanowires and Nanowire Composites
08/18/2010EP2218096A1 Organic transistor, organic transistor array and display apparatus
08/18/2010EP2218095A1 Methods of etching trenches into silicon of a semiconductor subtrate, methods of forming trench isolation in silicon of a semiconductor substrate, and methods of forming a plurality of diodes
08/18/2010EP2217530A1 A deposit and electrical devices comprising the same
08/18/2010EP2095408B1 Stress enhanced mos transistor and methods for its fabrication
08/18/2010EP1374314B1 Integrated toroidal coil inductors for ic devices and manufacturing method
08/18/2010EP1228534B1 Semiconductor non-volatile memory device
08/18/2010CN201556625U Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop
08/18/2010CN201556624U Schottky diode structure utilizing generated depletion region to reduce reverse leakage current
08/18/2010CN201556623U schottky diode
08/18/2010CN201556622U Chip electrode diode
08/18/2010CN201556620U Bilateral different-voltage regulator diode
08/18/2010CN201555984U Thin-film transistor used for electric-wetting displaying device
08/18/2010CN1956225B Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
08/18/2010CN1905209B Semiconductor device and method for fabricating the same
08/18/2010CN1759488B Narrow fin finfet
08/18/2010CN1707806B Spiral inductor formed in semiconductor substrate and method for forming the inductor
08/18/2010CN101809749A Organic thin film transistor
08/18/2010CN101809748A Method for manufacturing field-effect transistor
08/18/2010CN101809747A Thin film transistor, manufacturing method therefor, and display apparatus using the same
08/18/2010CN101809742A Switching device for electric circuit
08/18/2010CN101809727A DMOS transistor and method for manufacturing the same
08/18/2010CN101809726A Mosfet active area and edge termination area charge balance
08/18/2010CN101809058A Polymer compound, method for producing the same, and composition containing the polymer compound
08/18/2010CN101807666A Chalcogenide glass constant current device, and its method of fabrication and operation
08/18/2010CN101807607A Metal-insulator-metal capacitor structure and manufacturing method thereof
08/18/2010CN101807606A n-type zinc oxide/p-type diamond heterojunction tunnel diode and manufacturing method thereof
08/18/2010CN101807605A Semiconductor device and manufacture method thereof
08/18/2010CN101807604A Point contact Laterally Diffused Metal Oxide Semiconductor (LDMOS) structure transistor unit
08/18/2010CN101807603A VDMOS (Vertical Double-diffusing Metal-Oxide-Semiconductor) transistor testing structure
08/18/2010CN101807602A Asymmetrical source-drain field effect transistor and preparation method thereof
08/18/2010CN101807601A Grid-control PNPN field-effect transistor by utilizing SiGe source electrode and preparation method thereof
08/18/2010CN101807600A Transistor, semiconductor device including transistor, and manufacturing method of transistor and semiconductor device
08/18/2010CN101807599A Semiconductor device and method of manufacturing the same
08/18/2010CN101807598A PNPNP type triac
08/18/2010CN101807597A Autoregistration submicron gate structure and manufacturing method thereof
08/18/2010CN101807588A 半导体装置 Semiconductor device
08/18/2010CN101807582A Flexible pixel array substrate and display
08/18/2010CN101807577A Split gate flash memory and manufacture method thereof
08/18/2010CN101807576A Nano-crystal floating gate nonvolatile memory and manufacturing method thereof
08/18/2010CN101807574A Groove type power MOS device and manufacturing method thereof
08/18/2010CN101807571A Capacitive element, designing method of the same and integrated circuit device including the same
08/18/2010CN101807549A TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof
08/18/2010CN101807546A Trench type metal-oxide semiconductor device and manufacture method thereof
08/18/2010CN101807535A Gate oxide layer failure analysis method and used test structure
08/18/2010CN101807517A Method for forming copper-interconnection MIM capacitor structure and formed structure thereof
08/18/2010CN101490838B Nonvolatile semiconductor memory and its drive method
08/18/2010CN101465370B Halbleitervorrichtung mit super junction
08/18/2010CN101414622B Composite field plate heterojunction field effect transistor based on source field plate and leakage field plate
08/18/2010CN101385147B Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout
08/18/2010CN101300670B An embedded strain layer in thin soi transistor and a method of forming the same
08/18/2010CN101211769B Grids structure manufacture method
08/18/2010CN101207024B Semiconductor memory and forming method thereof
08/18/2010CN101185169B Trenched-gate field effect transistors and methods of forming the same
08/18/2010CN101154665B Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same
08/17/2010USRE41511 Semiconductor device having a thin-film circuit element provided above an integrated circuit
08/17/2010USRE41509 High voltage vertical conduction superjunction semiconductor device
08/17/2010US7777409 Semiconductor device including a flexible support
08/17/2010US7777351 Thin stacked interposer package
08/17/2010US7777350 Semiconductor stack package having wiring extension part which has hole for wiring
08/17/2010US7777346 Semiconductor integrated circuit device and a method of manufacturing the same
08/17/2010US7777341 Semiconductor device
08/17/2010US7777340 Semiconductor device
08/17/2010US7777339 Semiconductor chips with reduced stress from underfill at edge of chip
08/17/2010US7777306 Defect-free hybrid orientation technology for semiconductor devices
08/17/2010US7777305 Nitride semiconductor device and manufacturing method thereof
08/17/2010US7777302 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure
08/17/2010US7777297 Non-planar fuse structure including angular bend
08/17/2010US7777295 Semiconductor structure and method of manufacture
08/17/2010US7777294 Semiconductor device including a high-breakdown voltage MOS transistor
08/17/2010US7777293 Semiconductor integrated circuit, D-A converter device, and A-D converter device
08/17/2010US7777292 Semiconductor device
08/17/2010US7777290 PIN diodes for photodetection and high-speed, high-resolution image sensing
08/17/2010US7777284 Metal-oxide-semiconductor transistor and method of forming the same
08/17/2010US7777283 Electric component
08/17/2010US7777282 Self-aligned tunneling pocket in field-effect transistors and processes to form same
08/17/2010US7777279 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
08/17/2010US7777278 Lateral semiconductor component with a drift zone having at least one field electrode
08/17/2010US7777276 FinFET transistor and circuit
08/17/2010US7777274 Power semiconductor component having a field electrode and method for producing this component
08/17/2010US7777273 MOSFET having recessed channel
08/17/2010US7777272 Non-volatile memory device and semiconductor package including the same
08/17/2010US7777271 System and method for providing low cost high endurance low voltage electrically erasable programmable read only memory
08/17/2010US7777270 Nonvolatile semiconductor memory device and method for manufacturing the same
08/17/2010US7777269 Dual-gate device
08/17/2010US7777268 Dual-gate device
08/17/2010US7777267 Manufacture method and structure of a nonvolatile memory
08/17/2010US7777266 Conductive line comprising a capping layer
08/17/2010US7777264 Random access memory device utilizing a vertically oriented select transistor
08/17/2010US7777261 Magnetic device having stabilized free ferromagnetic layer
08/17/2010US7777258 Recessed gate transistor structure and method of forming the same
08/17/2010US7777255 Bipolar transistor with raised base connection region and process for the production thereof
08/17/2010US7777254 Normally-off field-effect semiconductor device
08/17/2010US7777252 III-V hemt devices
08/17/2010US7777251 Compound semiconductor device and doherty amplifier using compound semiconductor device
08/17/2010US7777250 Lattice-mismatched semiconductor structures and related methods for device fabrication
08/17/2010US7777249 Semiconductor device with enhanced switching speed and method for manufacturing the same
08/17/2010US7777248 Semiconductor device for latch-up prevention
08/17/2010US7777247 Semiconductor light emitting device mounting substrates including a conductive lead extending therein
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