Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/12/2010US20100200902 NAND Flash Memory Device
08/12/2010US20100200900 Magnetoresistive element and method of manufacturing the same
08/12/2010US20100200899 Spin transistor and method of manufacturing the same
08/12/2010US20100200897 Transistor and method of manufacturing the same
08/12/2010US20100200896 Embedded stress elements on surface thin direct silicon bond substrates
08/12/2010US20100200894 Hetero junction bipolar transistor
08/12/2010US20100200893 Super gto-based power blocks
08/12/2010US20100200892 tunnel device
08/12/2010US20100200866 SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device
08/12/2010US20100200865 Group iii nitride semiconductor substrate and method for cleaning the same
08/12/2010US20100200863 Electrode structure, semiconductor device, and methods for manufacturing those
08/12/2010US20100200860 Thin Film Transistor Array Panel and Manufacturing Method Thereof
08/12/2010US20100200859 Thin film transistor array panel for x-ray detector
08/12/2010US20100200857 Oxide semiconductor thin-film transistor
08/12/2010US20100200855 Semiconductor device and manufacturing method thereof
08/12/2010US20100200854 Method for reclaiming a surface of a substrate
08/12/2010US20100200852 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
08/12/2010US20100200851 Semiconductor device and method of manufacturing the semiconductor device
08/12/2010US20100200850 Method of Producing a Partly or Completely Semi-Insulating or P-Type Doped ZnO Substrate, Substrates Obtained, and Electronic, Electro-Optic or Optoelectronic Devices Comprising Them
08/12/2010US20100200849 Thin film transistor array panel and manufacturing method thereof
08/12/2010US20100200843 Thin film transistor and display unit
08/12/2010US20100200840 Graphene-based transistor
08/12/2010US20100200839 Graphene grown substrate and electronic/photonic integrated circuits using same
08/12/2010US20100200838 Switching element
08/12/2010US20100200837 Dual sided processing and devices based on freestanding nitride and zinc oxide films
08/12/2010US20100200836 Nanoparticle positioning technique
08/12/2010US20100200835 Fabrication of germanium nanowire transistors
08/12/2010US20100200834 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same
08/12/2010US20100200663 Method for manufacturing semiconductor device
08/12/2010US20100200114 Dispenser for liquid crystal display panel and dispensing method using the same
08/12/2010US20100199783 Multi-axis force sensor and acceleration sensor
08/12/2010DE102010000904A1 Spin-Bauelement Spin component
08/12/2010DE102009010891A1 Method for producing MOSFET contacts on surface of silicon carbide semiconductor material of e.g. semiconductor element, involves heating metal layer to specific temperature, and removing metal layer from region of insulation layer
08/12/2010DE102009006885A1 Abgestufte Wannenimplantation für asymmetrische Transistoren mit kleinen Gateelektrodenabständen Graduated well implantation for asymmetric transistors with small gate electrode spacings
08/12/2010DE102009006884A1 In-situ erzeugte Drain- und Source-Gebiete mit einer verformungsinduzierenden Legierung und einem graduell variierenden Dotierstoffprofil In-situ generated drain and source regions with a strain-alloy and a gradually varying dopant
08/12/2010DE102009006801A1 Kurzkanaltransistor mit geringerer Längenfluktuation durch Verwenden eines amorphen Elektrodenmaterials während der Implantation Short channel transistor with a shorter length fluctuation by using an amorphous electrode material during implantation
08/12/2010DE102008044985B4 Verfahren zur Herstellung eines Halbleiterbauelements mit einem kohlenstoffenthaltenden leitenden Material für Durchgangskontakte A process for producing a semiconductor device with a carbon-containing conductive material for vias
08/12/2010DE102008010321B4 Herstellungsverfahren für eine Vorrichtung mit Superjunctionhalbleiterelement, Vorrichtung und integrierte Schaltung mit Superjunctionhalbleiterelement Manufacturing method for a device with Super Junction semiconductor element, device and integrated circuit with Super Junction semiconductor element
08/12/2010CA2751465A1 Encapsulated nanoparticles
08/12/2010CA2692067A1 Organoamine stabilized silver nanoparticles and process for producing same
08/11/2010EP2216816A2 Display device
08/11/2010EP2216811A2 Radiation hardened SRAM cells with floating bodies
08/11/2010EP2216806A2 Compound semiconductor device and method of manufacturing the same
08/11/2010EP2215830A1 Light source frequency detection circuit using bipolar transistor
08/11/2010EP2215660A1 Schottky diode for high-power application and method for making same
08/11/2010EP2215655A1 Wafer level packaging using flip chip mounting
08/11/2010EP1479102B1 Method of forming different silicide portions on different silicon-containing regions in a semiconductor device
08/11/2010CN201549512U Ldmos power device
08/11/2010CN201549511U Controlled silicon device using glass inactivating protection between gate pole and cathode
08/11/2010CN201549493U Micro diode molybdenum electrode lead structure
08/11/2010CN201549484U Thyristor press mounting device
08/11/2010CN1938836B Memory with double-gate finfets and method of fabrication
08/11/2010CN1937243B Power device explosion-proof method and device
08/11/2010CN1905138B Semiconductor device and method of fabricating the same
08/11/2010CN1757098B Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
08/11/2010CN1689167B Insulated gate field-effect transistor and its manufacturing method, and imaging device and its manufacturing method
08/11/2010CN1633224B 电路板及电子仪器 Circuit boards and electronic equipment
08/11/2010CN1539093B Electrostatic discharge protection for pixellated electronic device
08/11/2010CN101803052A Electronic device and circuit for providing tactile feedback
08/11/2010CN101803032A Semiconductor device and method for its manufacture
08/11/2010CN101803031A Semiconductor device manufacturing method and semiconductor device
08/11/2010CN101803030A Manufacturing method of semiconductor power devices
08/11/2010CN101803029A Semiconductor device and method for the production thereof
08/11/2010CN101803028A Thin film transistors using thin film semiconductor materials
08/11/2010CN101803026A An electronic device and a method of manufacturing an electronic device
08/11/2010CN101803023A Semiconductor device
08/11/2010CN101803021A Feeding device and its drive method
08/11/2010CN101803013A Semiconductor device and wire bonding method
08/11/2010CN101803008A Semiconductor device and method for manufacturing the same
08/11/2010CN101802987A Method for manufacturing electronic device
08/11/2010CN101802979A Compound semiconductor substrate, process for producing compound semiconductor substrate, and semiconductor device
08/11/2010CN101800253A Nano capacitor for storing energy and preparation method thereof
08/11/2010CN101800252A Groove-shaped Schottky barrier rectifier and manufacture method thereof
08/11/2010CN101800251A Electric charge capture non-volatile semiconductor storage unit and manufacture method thereof
08/11/2010CN101800250A Semiconductor device and method of manufacturing the semiconductor device
08/11/2010CN101800249A Transistor and method for manufacturing the transistor
08/11/2010CN101800248A Thin film transistor and display unit
08/11/2010CN101800247A LDMOS device capable of improving breakdown voltage and manufacturing method thereof
08/11/2010CN101800246A ESD device
08/11/2010CN101800245A Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor
08/11/2010CN101800244A Semiconductor device
08/11/2010CN101800243A Trench dmos transistor having a double gate structure
08/11/2010CN101800242A Nano electron device using nanocrystal material as Coulomb island and manufacture method thereof
08/11/2010CN101800230A Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device
08/11/2010CN101800229A 显示装置 Display device
08/11/2010CN101800225A Flash memory
08/11/2010CN101800213A Electrostatic discharge protection device, manufacturing method and drain used thereinto
08/11/2010CN101800200A Pocket implant for complementary bit disturb improvement and charging improvement of sonos memory cell
08/11/2010CN101800177A Method for adjusting Schottky barrier diode formed by metals and silicon
08/11/2010CN101800168A Method of forming semiconductor thin film and inspection device of semiconductor thin film
08/11/2010CN101800167A Method for preparing metal-oxide-semiconductor capacitor on germanium substrate
08/11/2010CN101800165A Production method for channel capacitor
08/11/2010CN101798057A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
08/11/2010CN101510561B Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube
08/11/2010CN101478002B Thyristor controlled by accumulation layer
08/11/2010CN101431028B Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same
08/11/2010CN101414635B Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof
08/11/2010CN101414628B Groove Gamma gate transistor with high electron mobility and preparing method thereof
08/11/2010CN101414623B Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof
08/11/2010CN101405867B Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
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