Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/07/2010US7790538 Integration of strained Ge into advanced CMOS technology
09/07/2010US7790533 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
09/07/2010US7790521 Thin film semiconductor device, method of manufacturing the same and display
09/07/2010US7790494 Method of fabricating a multi-bit electro-mechanical memory device
09/07/2010US7790483 Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
09/07/2010US7790335 Photomask and manufacturing method of semiconductor device
09/02/2010WO2010099065A1 Gan-based high electron mobility transistor structures
09/02/2010WO2010098952A1 Material infusion in a trap layer structure using gas cluster ion beam processing
09/02/2010WO2010098742A1 Trench device structure and fabrication
09/02/2010WO2010098464A1 HETERO Pn JUNCTION SEMICONDUCTOR AND PROCESS FOR PRODUCING SAME
09/02/2010WO2010098372A1 Field effect transistor
09/02/2010WO2010098326A1 Novel compounds, process for preparing same, organic semiconductor materials, and organic semiconductor devices
09/02/2010WO2010098294A1 Silicon carbide semiconductor device
09/02/2010WO2010098234A1 Wafer bonding apparatus and method of bonding wafers
09/02/2010WO2010098151A1 Semiconductor device and method for manufacturing same
09/02/2010WO2010098121A1 Method for manufacturing dielectric body, method for manufacturing semiconductor device, program, and recording medium
09/02/2010WO2010098101A1 Transistor, transistor manufacturing method, and manufacturing device thereof
09/02/2010WO2010098100A1 Transistor, method for manufacturing transistor, and apparatus for manufacturing transistor
09/02/2010WO2010098076A1 Storage-, insulation gate-, and field effect-type transistor
09/02/2010WO2010097997A1 Magnetic oscillation element
09/02/2010WO2010097862A1 Semiconductor memory cells and manufacturing method therefor as well as semiconductor memory devices
09/02/2010WO2010097859A1 Mounted transistor and method of producing same
09/02/2010WO2010097393A1 Method for manufacturing nano electronic devices made from 2d carbon crystals like graphene and devices obtained with this method
09/02/2010WO2010080437A3 Memory cell comprising a diode connected to at least three resistivity-switching elements and methods of fabricating and reading the same
09/02/2010WO2010075002A3 Integrated shunt protection diodes for thin-film photovoltaic cells and modules
09/02/2010WO2010065427A3 Power device structures and methods
09/02/2010WO2010065412A3 A junction field effect transistor having a double gate structure and method of making same
09/02/2010WO2009125510A9 Acceleration sensor
09/02/2010WO2006124387A3 Gallium nitride high electron mobility transistor structure
09/02/2010US20100221899 Method of manufacturing a polycrystalline semiconductor thin film
09/02/2010US20100221885 Method of manufacturing dielectric film
09/02/2010US20100221880 Non-volatile semiconductor memory device and method of manufacturing the same
09/02/2010US20100221877 Method of manufacturing a soi structure having a sige layer interposed between the silicon and the insulator
09/02/2010US20100221870 Semiconductor device and method for manufacturing the same
09/02/2010US20100221855 Light Emitting Device and Method of Manufacturing the Same
09/02/2010US20100220761 Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
09/02/2010US20100220533 Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture
09/02/2010US20100220516 Reducing Source Loading Effect in Spin Torque Transfer Magnetoresisitive Random Access Memory (STT-MRAM)
09/02/2010US20100219510 Method for fabricating high density pillar structures by double patterning using positive photoresist
09/02/2010US20100219509 Tiled substrates for deposition and epitaxial lift off processes
09/02/2010US20100219506 Systems and Methods of Laser Texturing and Crystallization of Material Surfaces
09/02/2010US20100219505 Nitride crystal with removable surface layer and methods of manufacture
09/02/2010US20100219504 Four-Terminal Gate-Controlled LVBJTs
09/02/2010US20100219503 Chip capacitive coupling
09/02/2010US20100219502 MIM Decoupling Capacitors under a Contact Pad
09/02/2010US20100219501 Trench isolation implantation
09/02/2010US20100219500 Method for manufacturing direct bonded soi wafer and direct bonded soi wafer manufactured by the methond
09/02/2010US20100219499 Semiconductor device and manufacturing method of the same
09/02/2010US20100219498 Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device
09/02/2010US20100219493 Method of Forming a Magnetic Tunnel Junction Device
09/02/2010US20100219492 Low switching field low shape sensitivity mram cell
09/02/2010US20100219491 Magnetic Tunnel Junction Device and Fabrication
09/02/2010US20100219490 Semiconductor sensor and method of manufacturing the same
09/02/2010US20100219489 Nanowire sensor device
09/02/2010US20100219488 Silicon structure, method for manufacturing the same, and sensor chip
09/02/2010US20100219487 Method for manufacturing a sensor component and sensor component
09/02/2010US20100219483 Semiconductor storage device
09/02/2010US20100219482 Semiconductor storage device
09/02/2010US20100219479 Mos device and method of fabricating a mos device
09/02/2010US20100219478 Mosfet, method of fabricating the same, cmosfet, and method of fabricating the same
09/02/2010US20100219472 Semiconductor device and method of manufacturing the same
09/02/2010US20100219471 Quasi-resurf ldmos
09/02/2010US20100219469 Mask rom cell structure and method of fabricating the same
09/02/2010US20100219468 Power device structures and methods
09/02/2010US20100219467 Semiconductor device having saddle fin transistor and manufacturing method of the same
09/02/2010US20100219466 Semiconductor device with vertical channel transistor
09/02/2010US20100219465 Semiconductor device
09/02/2010US20100219464 Production method for semiconductor device
09/02/2010US20100219463 Quasi-vertical structure for high voltage mos device
09/02/2010US20100219462 MOS-Gated Power Devices, Methods, and Integrated Circuits
09/02/2010US20100219461 Structure With PN Clamp Regions Under Trenches
09/02/2010US20100219460 Semiconductor device and method for manufacturing the same
09/02/2010US20100219459 Method for manufacturing a non-volatile memory, non-volatile memory device, and an integrated circuit
09/02/2010US20100219458 Semiconductor device and a method of manufacturing the same
09/02/2010US20100219456 Forming integrated circuits with replacement metal gate electrodes
09/02/2010US20100219455 Iii-nitride semiconductor field effect transistor
09/02/2010US20100219454 Field-effect transistor and method of manufacturing the same
09/02/2010US20100219453 Nanotube Device
09/02/2010US20100219452 GaN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURES
09/02/2010US20100219451 Field effect transistor and method of manufacturing the same
09/02/2010US20100219450 Asymmetric source/drain junctions for low power silicon on insulator devices
09/02/2010US20100219449 Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity
09/02/2010US20100219448 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device
09/02/2010US20100219447 Semiconductor device
09/02/2010US20100219446 High speed igbt
09/02/2010US20100219418 Diamond led devices and associated methods
09/02/2010US20100219417 Semiconductor device and method for manufacturing same
09/02/2010US20100219416 Method of improving surface morphology of (ga,al,in,b)n thin films and devices grown on nonpolar or semipolar (ga,al,in,b)n substrates
09/02/2010US20100219413 Method for manufacturing semiconductor device and method for manufacturing display device
09/02/2010US20100219411 Semiconductor device having a metal oxide channel
09/02/2010US20100219410 Semiconductor device and manufacturing method thereof
09/02/2010US20100219409 Polythiophenes and devices thereof
09/02/2010US20100219402 Thin film transistor and method for producing the same
09/02/2010US20100219396 Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure
09/02/2010US20100219393 Connectible nanotube circuit
09/02/2010US20100218607 Acceleration sensor
09/02/2010DE10327945B4 Halbleiterspeichervorrichtungen und Verfahren zur Herstellung derselben unter Verwendung von Seitenwandabstandshaltern Semiconductor memory devices and methods of making the same using sidewall spacers
09/02/2010DE10214176B4 Halbleiterbauelement mit einer vergrabenen Stoppzone und Verfahren zur Herstellung einer Stoppzone in einem Halbleiterbauelement A semiconductor device having a buried stop zone and process for producing a stop zone in a semiconductor device
09/02/2010DE102010000818A1 MEMS-Resonatorbauelemente MEMS resonator devices
09/02/2010DE102009024667A1 Verfahren zur Herstellung eines Halbleiters sowie Halbleiter und elektrisches Element A process for producing a semiconductor device as well as semiconductors and electric element
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