Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2010
08/17/2010US7777242 Light emitting device and fabrication method thereof
08/17/2010US7777241 Optical devices featuring textured semiconductor layers
08/17/2010US7777238 Chip-type light emitting device and wiring substrate for the same
08/17/2010US7777236 Light-emitting diode arrangement comprising a color-converting material
08/17/2010US7777231 Thin film transistor and method for fabricating same
08/17/2010US7777230 Display device
08/17/2010US7777227 Non-volatile semiconductor storage device and manufacturing method thereof
08/17/2010US7777226 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
08/17/2010US7777224 Semiconductor device and method of manufacturing the same
08/17/2010US7777222 Nanotube device structure and methods of fabrication
08/17/2010US7777216 Method of fabricating semiconductor device
08/17/2010US7777214 Phase change memory device with a novel electrode
08/17/2010US7777213 Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same
08/17/2010US7777212 Phase change memory devices including carbon-containing adhesive pattern
08/17/2010US7776759 Methods for forming an integrated circuit, including openings in a mold layer from nanowires or nanotubes
08/17/2010US7776758 Methods and devices for forming nanostructure monolayers and devices including such monolayers
08/17/2010US7776753 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
08/17/2010US7776737 Reliability of wide interconnects
08/17/2010US7776736 Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same
08/17/2010US7776732 Metal high-K transistor having silicon sidewall for reduced parasitic capacitance, and process to fabricate same
08/17/2010US7776712 Method of forming a semiconductor device
08/17/2010US7776711 Method for manufacturing a transistor of a semiconductor memory device
08/17/2010US7776699 Strained channel transistor structure and method
08/17/2010US7776697 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
08/17/2010US7776692 Semiconductor device having a vertical channel and method of manufacturing same
08/17/2010US7776689 Semiconductor device and method of fabricating the same
08/17/2010US7776667 Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system
08/17/2010US7776647 Semiconductor components and methods of fabrication with circuit side contacts, conductive vias and backside conductors
08/17/2010US7776646 Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers
08/17/2010US7776630 tunable dopant based core/shell/shell quantum dots having a broad excitation spectrum; Core/shell semiconductor quantum dots (Qdots) have attracted enormous research interest in the field of electronics, optoelectronics, biomedical imaging and spintronics, measuring and analysis
08/17/2010US7776495 Forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle; thus peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns
08/17/2010CA2636572C A method for reshaping, regeneration and retiming of optical data signals and semiconductor for use therein
08/12/2010WO2010090980A2 High speed, low power consumption, isolated analog cmos unit
08/12/2010WO2010090978A1 Maskless process for suspending and thinning nanowires
08/12/2010WO2010090885A2 Iii-nitride devices and circuits
08/12/2010WO2010090254A1 Device and method for deposition of microstructure
08/12/2010WO2010090187A1 Nonvolatile semiconductor memory device and fabrication method therefor
08/12/2010WO2010090070A1 Microphone unit
08/12/2010WO2010090055A1 Electrode connection structure and method for manufacturing the same
08/12/2010WO2010089988A1 Semiconductor device
08/12/2010WO2010089981A1 Semiconductor device
08/12/2010WO2010089856A1 Tft array inspection method and tft array inspection apparatus
08/12/2010WO2010089831A1 Semiconductor device and method for producing the same
08/12/2010WO2010089675A1 Ic and ic manufacturing method
08/12/2010WO2010089545A1 Encapsulated nanoparticles
08/12/2010WO2010062645A3 Methods of forming diodes
08/12/2010WO2010036942A3 Power mosfet having a strained channel in a semiconductor heterostructure on metal substrate
08/12/2010WO2009051663A3 Transistor device and method
08/12/2010US20100203794 Flat panel display
08/12/2010US20100203689 finFET TRANSISTOR AND CIRCUIT
08/12/2010US20100202483 Two terminal light emitting and lasing devices and methods
08/12/2010US20100202208 Semiconductor device including contact plug having an elliptical sectional shape
08/12/2010US20100202205 Semiconductor device
08/12/2010US20100201861 Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device
08/12/2010US20100201854 Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate
08/12/2010US20100201666 Electro-optical device, shift register circuit, and semiconductor device
08/12/2010US20100201662 Light emitting apparatus and method for manufacturing the same
08/12/2010US20100201439 III-Nitride Devices and Circuits
08/12/2010US20100201383 Detection device and detection system using the same
08/12/2010US20100201004 Carbon/epoxy resin composition and method of producing a carbon-epoxy dielectric film using the same
08/12/2010US20100200999 Semiconductor device and method of fabricating same
08/12/2010US20100200964 Method of producing a porous dielectric element and corresponding dielectric element
08/12/2010US20100200962 Silocon wafer supporting method, heat treatment jig and heat-treated wafer
08/12/2010US20100200957 Scribe-Line Through Silicon Vias
08/12/2010US20100200956 Compound semiconductor substrate, process for producing compound semiconductor substrate, and semiconductor device
08/12/2010US20100200955 Group III-V nitride based semiconductor substrate and method of making same
08/12/2010US20100200954 Ion implanted substrate having capping layer and method
08/12/2010US20100200953 On-chip heater and methods for fabrication thereof and use thereof
08/12/2010US20100200952 Semiconductor device
08/12/2010US20100200950 Semiconductor device having dielectric layer with improved electrical characteristics and associated methods
08/12/2010US20100200949 Method for tuning the threshold voltage of a metal gate and high-k device
08/12/2010US20100200947 Die seal ring
08/12/2010US20100200945 Schottky diode and method of fabricating the same
08/12/2010US20100200944 Dark current reduction in back-illuminated imaging sensors
08/12/2010US20100200939 Storage element and memory
08/12/2010US20100200938 Methods for forming layers within a mems device using liftoff processes
08/12/2010US20100200937 METHOD AND STRUCTURE FOR PMOS DEVICES WITH HIGH K METAL GATE INTEGRATION AND SiGe CHANNEL ENGINEERING
08/12/2010US20100200936 Semiconductor device
08/12/2010US20100200935 Semiconductor device comprising gate electrode having arsenic and phosphorus
08/12/2010US20100200934 Field effect device includng recessed and aligned germanium containing channel
08/12/2010US20100200931 Mosfet devices and methods of making
08/12/2010US20100200929 Semiconductor integrated circuit device
08/12/2010US20100200927 Semiconductor-on-insulator substrate and structure including multiple order radio ferquency harmonic supressing region
08/12/2010US20100200926 Memory Cells Having Contact Structures and Related Intermediate Structures
08/12/2010US20100200925 Semiconductor device and method of manufacturing the same
08/12/2010US20100200923 Multiple-gate transistor structure and method for fabricating
08/12/2010US20100200922 Electrostatic Discharge Protection Device and Method
08/12/2010US20100200917 Nonplanar device with stress incorporation layer and method of fabrication
08/12/2010US20100200916 Semiconductor devices
08/12/2010US20100200915 Lateral trench mosfet having a field plate
08/12/2010US20100200914 Semiconductor device and method of manufacturing the same
08/12/2010US20100200913 Semiconductor storage device
08/12/2010US20100200912 Mosfets with terrace irench gate and improved source-body contact
08/12/2010US20100200911 Electrostatic discharge failure protective element, electrostatic discharge failure protective circuit, semiconductor device and semiconductor device manufacturing method
08/12/2010US20100200910 Semiconductor Devices with Stable and Controlled Avalanche Characteristics and Methods of Fabricating the Same
08/12/2010US20100200909 Semiconductor device and method of manufacturing same
08/12/2010US20100200907 Semiconductor Integrated Circuit Device and Method of Fabricating the Same
08/12/2010US20100200905 Nand memory cells and manufacturing method thereof
08/12/2010US20100200904 Gate fringing effect based channel formation for semiconductor device
08/12/2010US20100200903 Nonvolatile memory device and method for fabricating the same