Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2010
07/29/2010US20100187615 Linear Gate Level Cross-Coupled Transistor Device with Direct Electrical Connection of Cross-Coupled Transistors to Common Diffusion Node
07/29/2010US20100187614 Selective nitridation of gate oxides
07/29/2010US20100187610 Semiconductor device having dual metal gates and method of manufacture
07/29/2010US20100187608 Semiconductor device
07/29/2010US20100187606 Semiconductor device that includes ldmos transistor and manufacturing method thereof
07/29/2010US20100187604 Semiconductor device
07/29/2010US20100187603 Semiconductor device
07/29/2010US20100187602 Methods for making semiconductor devices using nitride consumption locos oxidation
07/29/2010US20100187601 Semiconductor device
07/29/2010US20100187600 Semiconductor device and method of producing the same
07/29/2010US20100187599 Semiconductor device and manufacturing method of the same
07/29/2010US20100187597 Method of forming spaced-apart charge trapping stacks
07/29/2010US20100187596 Self-aligned double patterning for memory and other microelectronic devices
07/29/2010US20100187595 Nonvolatile memory devices and methods of manufacturing the same
07/29/2010US20100187594 Semiconductor memory and method of manufacturing the same
07/29/2010US20100187593 Nand flash memory and method for manufacturing the same
07/29/2010US20100187592 High performance flash memory devices
07/29/2010US20100187590 Semiconductor device including metal insulator semiconductor transistor
07/29/2010US20100187585 Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
07/29/2010US20100187583 Reconfigurable Electric Circuitry and Method of Making Same
07/29/2010US20100187579 Transistor devices and methods of making
07/29/2010US20100187578 Stress enhanced transistor devices and methods of making
07/29/2010US20100187577 Schottky diode
07/29/2010US20100187576 Method of processing resist, semiconductor device, and method of producing the same
07/29/2010US20100187575 Semiconductor Element and a Method for Producing the Same
07/29/2010US20100187572 Suspended mono-crystalline structure and method of fabrication from a heteroepitaxial layer
07/29/2010US20100187571 Semiconductor device and manufacturing method thereof
07/29/2010US20100187570 Heterojunction Transistors Having Barrier Layer Bandgaps Greater Than Channel Layer Bandgaps and Related Methods
07/29/2010US20100187569 Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
07/29/2010US20100187568 Epitaxial methods and structures for forming semiconductor materials
07/29/2010US20100187567 Semiconductor device
07/29/2010US20100187566 Insulated gate bipolar transistor (igbt) electrostatic discharge (esd) protection devices
07/29/2010US20100187564 Method and Apparatus for Providing a Patterned Electrically Conductive and Optically Transparent or Semi-Transparent Layer over a Lighting Semiconductor Device
07/29/2010US20100187557 Light Sensor Using Wafer-Level Packaging
07/29/2010US20100187544 Fabricating a gallium nitride layer with diamond layers
07/29/2010US20100187543 Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor device
07/29/2010US20100187541 Doped Aluminum Nitride Crystals and Methods of Making Them
07/29/2010US20100187540 Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
07/29/2010US20100187539 Compound semiconductor epitaxial wafer and fabrication method thereof
07/29/2010US20100187537 Thin Film Transistor Array Substrate and Method for Manufacturing the Same
07/29/2010US20100187535 Manufacturing method of thin film transistor and manufacturing method of display device
07/29/2010US20100187530 Photoconductors for mid-/far-ir detection
07/29/2010US20100187529 Laser-irradiated thin films having variable thickness
07/29/2010US20100187524 Semiconductor device and method for manufacturing the same
07/29/2010US20100187523 Semiconductor device and method for manufacturing the same
07/29/2010US20100187522 Method of forming an organic light-emitting display with black matrix
07/29/2010US20100187503 Semiconductor device and manufacturing method thereof
07/29/2010US20100187502 Enclosed nanotube structure and method for forming
07/29/2010US20100187499 Method for epitaxial growth and epitaxial layer structure using the method
07/29/2010US20100187493 Semiconductor storage device and method of manufacturing the same
07/29/2010US20100187317 Semiconductor device
07/29/2010US20100186799 Switchable solar cell devices
07/29/2010US20100186511 Acceleration sensor
07/29/2010DE10361715B4 Verfahren zur Erzeugung eines Übergangsbereichs zwischen einem Trench und einem den Trench umgebenden Halbleitergebiet A process for the production of a transition region between a trench and a trench surrounding the semiconductor region
07/29/2010DE102009023899A1 Halbleiterbauelement, welches eine Ausgangskapazität aufgrund von parasitärer Kapazität reduziert A semiconductor device which reduces an output capacitance due to parasitic capacitance
07/29/2010DE102004036982B4 Leistungshalbleitermodulsystem mit einem in einen Baugruppenträger einsteckbaren und mit einem Gehäuse des Baugruppenträgers verrastbaren Leistungshalbleitermodul Power semiconductor module system can be latched with an insertable in a rack and a housing of the rack power semiconductor module
07/29/2010DE102004012629B4 Speicherbauelement mit einem Feldeffekt-Halbleiterschalter und Verfahren zu seiner Herstellung Memory device having a field effect semiconductor switches and method for its preparation
07/28/2010EP2211387A2 Method of making a p-n homojunction in a nanostructure
07/28/2010EP2211376A1 Iii nitride electronic device and iii nitride semiconductor epitaxial substrate
07/28/2010EP2211375A2 Gated thin-film diode and method of manufacturing the same
07/28/2010EP2210272A1 Tunable voltage isolation ground to ground esd clamp
07/28/2010EP2210269A1 Method for suppressing lattice defects in a semiconductor substrate
07/28/2010EP1719164B1 Method of manufacturing a semiconductor device
07/28/2010CN201536105U Mini-sized expansible-pin surface-mounted diode
07/28/2010CN1832220B Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and display device employing the same
07/28/2010CN1652331B Device for electrostatic discharge protection and circuit thereof
07/28/2010CN1637532B 液晶显示器 LCD Monitor
07/28/2010CN101790791A Organic thin film transistor and organic thin film light-emitting transistor
07/28/2010CN101790790A High hole mobility p-channel ge transistor structure on si substrate
07/28/2010CN101789451A Semiconductor device and method for manufacturing the same
07/28/2010CN101789450A Thin film transistor and method for manufacturing silicon-rich channel layer
07/28/2010CN101789449A Semiconductor assembly structure and manufacturing method thereof
07/28/2010CN101789448A P channel VDMOS (Vertical Double Diffused Metal Oxide Semiconductor) device based on strained silicon technology
07/28/2010CN101789447A Metal oxide semiconductor (MOS) transistor and formation method thereof
07/28/2010CN101789446A Double-heterojunction MOS-HEMT component
07/28/2010CN101789445A Semiconductor device
07/28/2010CN101789444A First layer of metal capable of increasing breakdown voltage of MOS transistor
07/28/2010CN101789435A Super structure based on vertical gate SOI CMOS device and manufacturing method thereof
07/28/2010CN101789431A Deep trench insulated gate bipolar transistor
07/28/2010CN101789430A High-density low-parasitic capacitor
07/28/2010CN101789428A Embedded PMOS auxiliary trigger SCR structure
07/28/2010CN101789425A Semiconductor element, electric circuit, display device and light-emitting device
07/28/2010CN101789401A CMOS (Complementary Metal-Oxide-Semiconductor Transistor) and manufacture method thereof
07/28/2010CN101789378A Laminating system
07/28/2010CN101789377A Method for increasing stress led into channel and semiconductor device
07/28/2010CN101789376A VDMOS and preparation method thereof
07/28/2010CN101789370A Method of forming HfSiN metal for n-FET applications
07/28/2010CN101789368A Semiconductor device and manufacture method thereof
07/28/2010CN101789046A Method for analyzing high frequency stability of heterojunction bipolar transistor device
07/28/2010CN101515588B Radio frequency SOI LDMOS device with H-shaped gate
07/28/2010CN101325200B Memory unit and method for manufacturing the same
07/28/2010CN101256981B Semiconductor device and method of manufacturing the same
07/28/2010CN101253622B Capacitorless DRAM on bulk silicon
07/28/2010CN101047207B Semiconductor device and manufacturing method thereof
07/28/2010CN101006588B Manufacturing method of semiconductor device
07/27/2010US7764532 High speed OTP sensing scheme
07/27/2010US7764328 Organic electroluminescent display device
07/27/2010US7764136 Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element
07/27/2010US7763978 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions
07/27/2010US7763977 Semiconductor device and manufacturing method therefor