Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2010
09/30/2010US20100244133 Printed Dopant Layers
09/30/2010US20100244131 Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions
09/30/2010US20100244130 Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket
09/30/2010US20100244129 Semiconductor device and method of manufacturing semiconductor device
09/30/2010US20100244128 Configuration and fabrication of semiconductor structure using empty and filled wells
09/30/2010US20100244127 Bandgap engineered mos-gated power transistors
09/30/2010US20100244126 Structure and Method for Forming a Salicide on the Gate Electrode of a Trench-Gate FET
09/30/2010US20100244125 Power semiconductor device structure for integrated circuit and method of fabrication thereof
09/30/2010US20100244124 Semiconductor devices having a vertical channel transistor
09/30/2010US20100244123 Field-effect transistor with self-limited current
09/30/2010US20100244122 Memory utilizing oxide nanolaminates
09/30/2010US20100244121 Stressed semiconductor device and method for making
09/30/2010US20100244120 Nonvolatile split gate memory cell having oxide growth
09/30/2010US20100244119 Nonvolatile semiconductor memory device and method for manufacturing same
09/30/2010US20100244118 Nonvolatile Memory Device and Method of Manufacturing the Same
09/30/2010US20100244117 Nrom memory cell, memory array, related devices and methods
09/30/2010US20100244116 Method of forming an eeprom device and structure therefor
09/30/2010US20100244115 Anti-fuse memory cell
09/30/2010US20100244114 Nonvolatile memory device and method for manufacturing same
09/30/2010US20100244113 Mos varactor and fabricating method of the same
09/30/2010US20100244112 Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact
09/30/2010US20100244109 Trenched metal-oxide-semiconductor device and fabrication thereof
09/30/2010US20100244107 Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors
09/30/2010US20100244106 Fabrication and structure of asymmetric field-effect transistors using L-shaped spacers
09/30/2010US20100244105 Transistors having temperature stable schottky contact metals
09/30/2010US20100244104 Compound semiconductor device and manufacturing method thereof
09/30/2010US20100244103 Structure and method of fabricating finfet
09/30/2010US20100244101 Semiconductor device and method for manufacturing the same
09/30/2010US20100244100 Compound semiconductor substrate
09/30/2010US20100244099 Double heterojunction bipolar transistor having graded base region
09/30/2010US20100244098 Semiconductor device
09/30/2010US20100244097 Field effect transistor
09/30/2010US20100244096 Semiconductor device
09/30/2010US20100244095 Dual triggered silicon controlled rectifier
09/30/2010US20100244094 Dual triggered silicon controlled rectifier
09/30/2010US20100244093 Semiconductor module
09/30/2010US20100244091 Insulated gate bipolar transistor
09/30/2010US20100244090 TVS with low capacitance & Forward voltage drop with depleted SCR as steering diode
09/30/2010US20100244089 Lateral schottky diode
09/30/2010US20100244087 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
09/30/2010US20100244079 Semiconductor light emitting element and method for fabricating the same
09/30/2010US20100244054 Method of manufacturing semiconductor device, semiconductor device and semiconductor composite device
09/30/2010US20100244051 Semiconductor Device and Manufacturing Method Thereof
09/30/2010US20100244050 Semiconductor device
09/30/2010US20100244049 Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same
09/30/2010US20100244048 Semiconductor device and method for manufacturing the same
09/30/2010US20100244047 Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures
09/30/2010US20100244045 Semiconductor device and method for manufacturing the same
09/30/2010US20100244044 GaN-BASED FIELD EFFECT TRANSISTOR
09/30/2010US20100244043 Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of an electrical device
09/30/2010US20100244041 Semiconductor device and manufacturing method thereof
09/30/2010US20100244038 Thin film transistor and fabricating method of the same
09/30/2010US20100244037 Thin film transistor, its manufacturing method, and liquid crystal display panel and electronic device using same
09/30/2010US20100244036 Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same
09/30/2010US20100244034 Thin film transistor
09/30/2010US20100244032 Aluminum-nickel alloy wiring material, device for a thin film transistor and a thin film transistor substrate using the same, and method of manufacturing the thin film transistor substrate
09/30/2010US20100244031 Semiconductor device and method for manufacturing the same
09/30/2010US20100244029 Semiconductor device
09/30/2010US20100244027 Semiconductor device and method of controlling the same
09/30/2010US20100244022 Thin film transistor and method of producing same
09/30/2010US20100244021 Semiconductor device, display device, and electronic appliance
09/30/2010US20100244020 Semiconductor device and method for manufacturing the same
09/30/2010US20100244019 Metal Oxide Semiconductor Films, Structures and Methods
09/30/2010US20100244018 Semiconductor device and method for manufacturing the same
09/30/2010US20100244017 Thin-film transistor (tft) with an extended oxide channel
09/30/2010US20100243994 Transparent nonvolatile memory thin film transistor and method of manufacturing the same
09/30/2010US20100243990 Nanosensors
09/30/2010US20100243989 Semiconductor device
09/30/2010US20100242604 MEMS Device with Opposite Polarity Spring Bimorph
09/30/2010DE112008000172T5 Elektrodentrennverfahren und Vorrichtung auf Nanodrahtbasis mit getrenntem Elektrodenpaar Electrode separation processes and apparatus nanowire-based with separate pair of electrodes
09/30/2010CA2738385A1 Mosfet and method for manufacturing mosfet
09/30/2010CA2736950A1 Mosfet and method for manufacturing mosfet
09/29/2010EP2234269A1 Spin-valve element driving method, and spin-valve element
09/29/2010EP2234163A1 Semiconductor device and method of manufacturing the device, and method of manufacturing trench gate
09/29/2010EP2234150A2 Semiconductor device and production method therefor
09/29/2010EP2234146A2 Method for producing a number of integrated semiconductor components
09/29/2010EP2234115A1 Method for manufacturing a memory device with conductive nanoparticles
09/29/2010EP2233615A2 Metal nano-objects, formed on semiconductor surfaces, and methods for making said nano-objects
09/29/2010EP2232561A1 Manufacturing method of thin film transistor and manufacturing method of display device
09/29/2010EP2232560A2 Power transistor with protected channel
09/29/2010EP2232555A1 3-d and 3-d schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same
09/29/2010EP2232536A1 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
09/29/2010EP2232314A1 Method for obtaining a structured material with through openings, in particular nitrides of type iii semiconductors structured according to photonic crystal patterns
09/29/2010EP1654767B1 Transition metal alloys for use as a gate electrode and devices incorporating these alloys
09/29/2010EP1597769B1 Semiconductor device and method of manufacturing such a device
09/29/2010EP1290732B1 Method for producing a field effect transistor having a floating gate
09/29/2010CN1988177B Fin-fet having gaa structure and methods of fabricating the same
09/29/2010CN1987643B The photo mask and method of fabricating the array substrate for liquid crystal display device using the same
09/29/2010CN1941380B Semiconductor constructions of grid isolated area with indium doping subdomain
09/29/2010CN1906751B System and method for stress free conductor removal
09/29/2010CN1905132B Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device and forming method thereof
09/29/2010CN1877858B Metal oxide semiconductor (MOS) field effect transistor and method of fabricating the same
09/29/2010CN1797807B Organic semiconductor device and method for manufacturing the same
09/29/2010CN1793936B Acceleration sensor and manufacture method
09/29/2010CN1716603B Electronic device, thin film transistor structure and flat panel display having the same
09/29/2010CN101849289A Methods and devices for fabricating tri-layer beams
09/29/2010CN101849288A Semiconductor device
09/29/2010CN101848594A Plasma apparatus
09/29/2010CN101847663A Transient voltage suppressor (TVS) and method for forming same
09/29/2010CN101847662A Thin film transistor