Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2010
12/30/2010US20100327415 Silicon epitaxial wafer and manufacturing method thereof
12/30/2010US20100327414 Method For Producing A Semiconductor Wafer
12/30/2010US20100327413 Hardmask open and etch profile control with hardmask open
12/30/2010US20100327412 Method of semiconductor manufacturing for small features
12/30/2010US20100327411 Semiconductor device
12/30/2010US20100327410 Semiconductor device having a high aspect cylindrical capacitor and method for fabricating the same
12/30/2010US20100327409 Semiconductor device comprising capacitive element
12/30/2010US20100327408 Carbon/epoxy resin composition, and carbon-epoxy dielectric film produced by using the same
12/30/2010US20100327407 Interconnection wiring structure of a semiconductor device and method for manufacturing same
12/30/2010US20100327406 Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate
12/30/2010US20100327404 Inductor structures for integrated circuit devices
12/30/2010US20100327398 Design structure and method for buried inductors for ultra-high resistivity wafers for soi/rf sige applications
12/30/2010US20100327397 Method for manufacturing simox wafer and simox wafer
12/30/2010US20100327395 Semiconductor device on direct silicon bonded substrate with different layer thickness
12/30/2010US20100327394 Em rectifying antenna suitable for use in conjuction with a natural breakdown device
12/30/2010US20100327393 Method and structures for etching cavity in silicon under dielectric membrane
12/30/2010US20100327380 Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer
12/30/2010US20100327379 Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps
12/30/2010US20100327378 Semiconductor structure and method of forming the same
12/30/2010US20100327377 Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same
12/30/2010US20100327376 Metal High-K Transistor Having Silicon Sidewall For Reduced Parasitic Capacitance, And Process To Fabricate Same
12/30/2010US20100327375 Shallow extension regions having abrupt extension junctions
12/30/2010US20100327373 Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning
12/30/2010US20100327364 Semiconductor device with metal gate
12/30/2010US20100327361 Low cost symmetric transistors
12/30/2010US20100327360 FET With Replacement Gate Structure and Method of Fabricating the Same
12/30/2010US20100327357 Semiconductor device and method for fabricating the same
12/30/2010US20100327354 Thin film transistor having long lightly doped drain on soi substrate and process for making same
12/30/2010US20100327353 Semiconductor device and method for manufacturing the same
12/30/2010US20100327352 Semiconductor device and method for manufacturing the same
12/30/2010US20100327351 Semiconductor device and method for manufacturing the same
12/30/2010US20100327350 Electronic device including an integrated circuit with transistors coupled to each other
12/30/2010US20100327349 Semiconductor device and method of manufacturing the same
12/30/2010US20100327348 Semiconductor device, method of manufacturing the same and power-supply device using the same
12/30/2010US20100327347 Electronic device including a well region
12/30/2010US20100327346 Semiconductor device and method for forming the same
12/30/2010US20100327345 Semiconductor device
12/30/2010US20100327344 Power Semiconductor Devices and Methods
12/30/2010US20100327343 Bond pad with integrated transient over-voltage protection
12/30/2010US20100327342 Transient over-voltage clamp
12/30/2010US20100327340 Nonvolatile semiconductor memory device
12/30/2010US20100327338 Semiconductor memory device including multi-layer gate structure
12/30/2010US20100327333 Spin transport device
12/30/2010US20100327331 Semiconductor device
12/30/2010US20100327329 Semiconductor device and method of fabricating the same
12/30/2010US20100327327 Photosensitive charge-coupled device comprising vertical electrodes
12/30/2010US20100327322 Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control
12/30/2010US20100327321 Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling
12/30/2010US20100327320 Nitride semiconductor device
12/30/2010US20100327319 Control of tunneling junction in a hetero tunnel field effect transistor
12/30/2010US20100327318 Semiconductor device and manufacturing method of the same
12/30/2010US20100327317 Germanium on insulator using compound semiconductor barrier layers
12/30/2010US20100327316 Method for Manufacturing an III-V Engineered Substrate and the III-V Engineered Substrate Thereof
12/30/2010US20100327315 Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus
12/30/2010US20100327314 Insulated Gate Bipolar Transistor (IGBT) Collector Formed with Ge/A1 and Production Method
12/30/2010US20100327313 Semiconductor device
12/30/2010US20100327293 Field-effect transistor and method for fabricating the same
12/30/2010US20100327292 Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
12/30/2010US20100327291 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
12/30/2010US20100327290 Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device
12/30/2010US20100327288 Trench schottky diode and method for manufacturing the same
12/30/2010US20100327285 Semiconductor device and manufacturing method of semiconductor device and display device and manufacturing method of display device
12/30/2010US20100327283 Thin film transistor substrate and fabricating method thereof
12/30/2010US20100327281 Thin film transistor and method for manufacturing the same
12/30/2010US20100327280 Scaling of bipolar transistors
12/30/2010US20100327279 Micro vacuum gauge
12/30/2010US20100327278 Laminated structures
12/30/2010US20100327276 Method and system for passivation of defects in mercury cadmium telluride based optoelectric devices
12/30/2010US20100327261 High hole mobility p-channel ge transistor structure on si substrate
12/30/2010US20100327260 Single Electron Transistor Operating at Room Temperature and Manufacturing Method for Same
12/30/2010US20100327259 Ultra-Sensitive Detection Techniques
12/30/2010US20100327258 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires
12/30/2010US20100327252 Phase change memory apparatus and fabrication method thereof
12/30/2010US20100327250 Phase change memory device and method of manufacturing the same
12/30/2010US20100327249 Phase change memory device having an improved word line resistance, and methods of making same
12/30/2010DE112009000460T5 Transparente Dünnschichtelektrode Transparent thin-film electrode
12/30/2010DE112004000136B4 Halbleiterbauelemente Semiconductor devices
12/30/2010DE102010030180A1 Transistorbauelement mit einer amorphen semiisolierenden Kanalsteuerschicht Transistor device having an amorphous semi-insulating channel control layer
12/30/2010DE102008059646B4 Verfahren zur Herstellung eines Halbleiterbauelements als Mehr-Gatetransistor mit Stegen mit einer Länge, die durch die Gateelektrode definiert ist und Halbleiterbauelement A process for producing a semiconductor device as a multi-gate transistor with fins having a length, which is defined by the gate electrode and the semiconductor component
12/30/2010DE102008045037B4 Statischer RAM-Zellenaufbau und Mehrfachkontaktschema zum Anschluss von Doppelkanaltransistoren Static RAM cell structure and multiple contact schema for connection of dual channel transistors
12/30/2010DE102005001168B4 Verfahren und System zum Erzeugen einer Mehrzahl von Dünnfilmvorrichtungen Method and system for generating a plurality of thin-film devices
12/30/2010DE10004548B4 Trench-IGBT Trench IGBT
12/30/2010DE10003066B4 Halbleitersensor für eine physikalische Größe und Verfahren zum Herstellen desselben Of the same semiconductor sensor for a physical quantity and methods of making
12/29/2010WO2010151857A2 Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
12/29/2010WO2010151855A2 Iii-v semiconductor structures including aluminum-silicon nitride passivation
12/29/2010WO2010151721A1 Transistor with enhanced channel charge inducing material layer and threshold voltage control
12/29/2010WO2010151604A2 Methods for fabricating passivated silicon nanowires and devices thus obtained
12/29/2010WO2010151553A1 Functional integration of dilute nitrides into high efficiency iii-v solar cells
12/29/2010WO2010151400A2 Fet with replacement gate structure and method of fabricating the same
12/29/2010WO2010151336A1 Plasma treatment method
12/29/2010WO2010151260A1 Switchable junction with intrinsic diodes with different switching thresholds
12/29/2010WO2010150573A1 Display device
12/29/2010WO2010150477A1 Acceleration sensor
12/29/2010WO2010150476A1 Acceleration sensor
12/29/2010WO2010150446A1 Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device
12/29/2010WO2010150442A1 Semiconductor device and method for manufacturing same
12/29/2010WO2010150429A1 Semiconductor device and method for manufacturing same
12/29/2010WO2010150427A1 Electric power conversion device
12/29/2010WO2010150407A1 Semiconductor device
12/29/2010WO2010150331A1 Semiconductor device and method for manufacturing same
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