Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2011
01/06/2011US20110001184 Method of adjusting the threshold voltage of a transistor by a buried trapping layer
01/06/2011US20110001183 Memory device and method of fabricating the same
01/06/2011US20110001182 Semiconductor device and method for manufacturing same
01/06/2011US20110001181 Nonvolatile Memory Devices
01/06/2011US20110001179 Semiconductor device and manufacturing method of the same
01/06/2011US20110001178 Nonvolatile semiconductor memory device and method for manufacturing same
01/06/2011US20110001172 Three-dimensional integrated circuit structure
01/06/2011US20110001171 Power converter integrated circuit floor plan and package
01/06/2011US20110001170 Semiconductor device and method of manufacturing semiconductor device
01/06/2011US20110001169 Forming uniform silicide on 3d structures
01/06/2011US20110001167 Reduced defect semiconductor-on-insulator hetero-structures
01/06/2011US20110001143 Composition Comprising Silicon Carbide
01/06/2011US20110001142 Method for manufacturing electronic device, method for manufacturing epitaxial substrate, iii nitride semiconductor element and gallium nitride epitaxial substrate
01/06/2011US20110001140 Semiconductor device and method of manufacturing same
01/06/2011US20110001136 Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor
01/06/2011US20110001135 Method for manufacturing self-aligned thin-film transistor and structure thereof
01/06/2011US20110001132 Semiconductor device and method for fabricating the same
01/06/2011US20110001127 Semiconductor material, method of making the same, and semiconductor device
01/06/2011US20110001126 Nitride semiconductor chip, method of fabrication thereof, and semiconductor device
01/06/2011US20110001122 Compound semiconductors
01/06/2011US20110001119 Method for the synthesis of an array of metal nanowire capable of supporting localized plasmon resonances and photonic device comprising said array
01/06/2011US20110001118 Patterning of nanostructures
01/06/2011US20110001117 Nanoscale wire-based memory devices
01/06/2011US20110001112 Nonvolatile memory device and manufacturing method thereof
01/06/2011US20110000224 Metal-core thermoelectric cooling and power generation device
01/06/2011CA2766085A1 Graphene device and method of fabricating a graphene device
01/05/2011EP2270894A1 Use of organic mesomeric compounds as dotands
01/05/2011EP2270871A1 Wide bandgap HEMTs with source connected field plates
01/05/2011EP2270870A1 Wide bandgap HEMTs with source connected field plates
01/05/2011EP2270869A2 Bipolar semiconductor device and related method
01/05/2011EP2270868A1 Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
01/05/2011EP2270849A2 Semiconductor Device and Manufacturing Method Thereof
01/05/2011EP2270846A2 Integrated circuits and methods for their fabrication
01/05/2011EP2270845A2 Integrated circuits and methods for their fabrication
01/05/2011EP2270844A2 Method for producing a vertical field effect transistor and field effect transistor
01/05/2011EP2270843A2 Method of making a high-voltage insulated gate transistor
01/05/2011EP2269226A1 Substrate having a charged zone in an insulating buried layer
01/05/2011EP2269219A1 High frequency field-effect transistor
01/05/2011EP1741143B1 Backside thinning of image array devices
01/05/2011EP1230675B1 DMOS transistor having a trench gate electrode and method of making the same
01/05/2011EP1220319B1 Ultrahigh speed image pickup device
01/05/2011EP0996975B1 Hethod of fabricating a field effect transistor in silicon carbide
01/05/2011DE112008003659T5 Nanostrukturen und Verfahren zum Herstellen derselben Nanostructures and methods for manufacturing the same
01/05/2011DE102010017056A1 Kondensatorstruktur Capacitor structure
01/05/2011DE102009030045B3 Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung Transparent rectifying metal-metal oxide semiconductor contact structure and method for its preparation and use
01/05/2011DE102008015211B4 Messanordnung und Verfahren zum Betreiben der Messanordnung Measuring system and method for operating the measuring arrangement
01/05/2011DE102006033692B4 Verfahren zur Herstellung eines strukturierten Dielektrikums für einen LDMOS-Transistor A method of forming a patterned dielectric for an LDMOS transistor
01/05/2011DE102006030631B4 Halbleiterbauelementanordnung mit einem Leistungsbauelement und einem Logikbauelement A semiconductor device assembly with a power device and a logic device
01/05/2011DE102006026943B4 Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden Using field-effect transistor with trench controllable two control electrodes
01/05/2011DE102005018378B4 Halbleitervorrichtung der Bauart mit dielektrischer Isolierung Semiconductor device of the type dielectric insulation
01/05/2011DE102004017164B4 Verfahren zur Herstellung eines SONOS-Speichers A process for the preparation of a SONOS memory
01/05/2011CN201699018U High-power planar junction unilateral TVS diode chip
01/05/2011CN201699017U High-power bidirectional TVS diode chip adopting planar junction
01/05/2011CN201699016U High voltage power MOS field-effect transistor manufactured based on super junction technique
01/05/2011CN201699013U Trench schottky barrier diode rectifying device
01/05/2011CN201699006U Air-cooled converter for thyristors
01/05/2011CN1934910B Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing same
01/05/2011CN1815743B Semiconductor device and method of fabricating the same
01/05/2011CN101939906A Resonant body transistor and oscillator
01/05/2011CN101939843A Semiconductor device
01/05/2011CN101939842A Semiconductor manufacturing method
01/05/2011CN101939830A Finfet with separate gates and method for fabricating a FinFET with separate gates
01/05/2011CN101939829A Method of producing thin film transistor and thin film transistor
01/05/2011CN101939828A Semiconductor device
01/05/2011CN101939824A EEPROM cell with charge loss
01/05/2011CN101939325A Organic semiconductor material
01/05/2011CN101937932A Thin film transistor and method for manufacturing the same
01/05/2011CN101937931A High performance field effect transistor and manufacturing method thereof
01/05/2011CN101937930A High-performance field effect transistor and formation method thereof
01/05/2011CN101937929A Deep groove super PN junction structure and formation method thereof
01/05/2011CN101937928A Silicon controlled rectifier structure capable of eliminating hazards of punching through lithography pinholes and production method thereof
01/05/2011CN101937927A Deep groove super PN junction structure and manufacturing method thereof
01/05/2011CN101937925A Semiconductor device
01/05/2011CN101937915A Semiconductor device and method of manufacturing the semiconductor device
01/05/2011CN101937914A Electronic device including an integrated circuit with transistors coupled to each other
01/05/2011CN101937913A Electronic device including a well region
01/05/2011CN101937848A MOS (Metal-oxide Semiconductor) transistor and making method thereof
01/05/2011CN101937847A Manufacturing method of semiconductor device
01/05/2011CN101937846A SiGe HBT (Heterostructure Bipolar Transistor) and manufacture method thereof
01/05/2011CN101937841A Method and structure for reducing grid resistance of power MOSFET (metal oxide semiconductor field-effect transistor)
01/05/2011CN101937837A Semiconductor device having a high aspect cylindrical capacitor and method for fabricating the same
01/05/2011CN101640217B Structure and method for improving current crowding effect of microwave power transistor emitter region
01/05/2011CN101621042B Prolate glass sealed surface mounting diode and packaging tape thereof
01/05/2011CN101615592B Semiconductor device, method of manufacturing the same, peeling method, and transfer method
01/05/2011CN101582455B Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof
01/05/2011CN101569015B Semiconductor device and method for manufacturing the same
01/05/2011CN101515583B Semiconductor device
01/05/2011CN101515102B Flat display device and method for manufacturing the same
01/05/2011CN101488505B Thin-film transistor array substrate
01/05/2011CN101483192B Vertical fense MOSFET device and manufacturing method thereof
01/05/2011CN101378083B Nonvolatile semiconductor memory device
01/05/2011CN101355100B Bipolar transistor and method for the production thereof
01/05/2011CN101312207B Enhancement type HEMT device structure and its manufacture method
01/05/2011CN101305468B Amorphous oxide field-effect transistor having crystalline region at the semiconductor/dielectric interface
01/05/2011CN101258607B Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous
01/05/2011CN101057337B Passivation structure with voltage equalizing loops
01/04/2011US7864592 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
01/04/2011US7864591 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
01/04/2011US7864560 Nano-electronic array
01/04/2011US7864140 Light-emitting display