Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2012
06/12/2012US8198714 Method and system for configuring a transformer embedded in a multi-layer integrated circuit (IC) package
06/12/2012US8198707 Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene
06/12/2012US8198706 Multi-level nanowire structure and method of making the same
06/12/2012US8198705 Ultra-thin die and method of fabricating same
06/12/2012US8198704 Semiconductor device including a crystal semiconductor layer
06/12/2012US8198703 Zener diode with reduced substrate current
06/12/2012US8198693 Solid-state image pickup apparatus and production method thereof
06/12/2012US8198692 Spin torque magnetic integrated circuits and devices therefor
06/12/2012US8198691 Semiconductor device having memory element with stress insulating film
06/12/2012US8198690 MEMS devices and methods of manufacture thereof
06/12/2012US8198687 Structure with PN clamp regions under trenches
06/12/2012US8198683 Semiconductor device including transistors with silicided impurity regions
06/12/2012US8198682 Semiconductor structure having a gate electrode at least partially disposed in a trench formed at a bend in a semiconductor material
06/12/2012US8198681 Semiconductor component with stress-absorbing semiconductor layer
06/12/2012US8198680 Semiconductor element, semiconductor device and methods for manufacturing thereof
06/12/2012US8198679 High voltage NMOS with low on resistance and associated methods of making
06/12/2012US8198678 Semiconductor device with improved on-resistance
06/12/2012US8198677 Trench-gate LDMOS structures
06/12/2012US8198676 P-channel silicon carbide MOSFET
06/12/2012US8198675 Silicon carbide semiconductor device and method of manufacturing the same
06/12/2012US8198674 Semiconductor device and manufacturing method thereof
06/12/2012US8198672 Ultrahigh density vertical NAND memory device
06/12/2012US8198671 Modification of charge trap silicon nitride with oxygen plasma
06/12/2012US8198670 Nonvolatile semiconductor memory device
06/12/2012US8198669 Semiconductor device and method for manufacturing same
06/12/2012US8198667 Semiconductor memory device and method for manufacturing same
06/12/2012US8198666 Semiconductor device including a nonvolatile memory element having first, second and third insulating films
06/12/2012US8198665 Semiconductor storage device and manufacturing method thereof
06/12/2012US8198659 Semiconductor device and method for fabricating the same
06/12/2012US8198658 Device and method for detecting biomolecules using adsorptive medium and field effect transistor
06/12/2012US8198654 Semiconductor device
06/12/2012US8198653 Compound semiconductor device and manufacturing method of the same
06/12/2012US8198652 Field effect transistor with reduced gate leakage current
06/12/2012US8198651 Electro static discharge protection device
06/12/2012US8198650 Semiconductor devices and systems
06/12/2012US8198643 Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same
06/12/2012US8198635 Light emitting device, method for manufacturing thereof and electronic appliance
06/12/2012US8198633 Stress transfer enhancement in transistors by a late gate re-crystallization
06/12/2012US8198631 Display device and method of fabricating the same
06/12/2012US8198630 Semiconductor device and manufacturing method thereof
06/12/2012US8198628 Doped substrate to be heated
06/12/2012US8198626 Reference wafer for calibration and method for fabricating the same
06/12/2012US8198623 Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
06/12/2012US8198622 Nanowire, device comprising nanowire, and their production methods
06/12/2012US8198621 Stretchable form of single crystal silicon for high performance electronics on rubber substrates
06/12/2012US8198620 Resistance switching memory
06/12/2012US8198618 Nonvolatile memory device and manufacturing method thereof
06/12/2012US8198184 Method to maximize nitrogen concentration at the top surface of gate dielectrics
06/12/2012US8198160 Vertical transistor phase change memory
06/12/2012US8198159 Semiconductor memory device and method of manufacturing the same
06/12/2012US8198155 Semiconductor device and method of manufacturing the same
06/12/2012US8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap
06/12/2012US8198121 Method of manufacturing solid-state imaging device
06/12/2012US8198110 Method of making a TFT array with photo-imageable insulating layer over address lines
06/12/2012US8197882 Method for forming thin film pattern, thin film manufacturing device, conductive thin film wiring, electro-optic device, electronic apparatus, and non-contact card medium
06/12/2012US8197720 Core/shell type semiconductor nanoparticle and method for production thereof
06/12/2012DE202012000826U1 Abschlusszonen-Grabenstruktur einer Schottky-Diode Statements zone grave structure of a Schottky diode
06/07/2012WO2012075478A1 Quantum dot and nanowire synthesis
06/07/2012WO2012074872A2 Silicon and silicon germanium nanowire structures
06/07/2012WO2012074542A1 Structure and method for enhancing interfacial perpendicular anisotropy in cofe(b)/mgo/cofe(b) magnetic tunnel junctions
06/07/2012WO2012074228A2 Nitride semiconductor device and method for manufacturing same
06/07/2012WO2012074046A1 Wiring structure and sputtering target
06/07/2012WO2012073942A1 Semiconductor device and method for producing same
06/07/2012WO2012073918A1 Semiconductor device and method for manufacturing semiconductor device
06/07/2012WO2012073913A1 Coating liquid for forming metal oxide thin film, metal oxide thin film, field effect transistor, and method for producing the field effect transistor
06/07/2012WO2012073888A1 Heteroacene compound, organic semiconductor material, and organic electronic device
06/07/2012WO2012073862A1 Semiconductor device, tft substrate, and method for manufacturing semiconductor device and tft substrate
06/07/2012WO2012073844A1 Oxide semiconductor film and semiconductor device
06/07/2012WO2012073797A1 Method for driving photosensor, method for driving semiconductor device, semiconductor device, and electronic device
06/07/2012WO2012073609A1 Semiconductor device
06/07/2012WO2012073583A1 Method of forming an inpurity implantation layer
06/07/2012WO2012073455A1 Process for production of semiconductor thin film, semiconductor device, and display device
06/07/2012WO2012073302A1 Semiconductor device
06/07/2012WO2012072751A1 Electrical component of a current limiter for protecting an electrical power supply
06/07/2012WO2012072646A1 A field effect transistor
06/07/2012WO2012072020A1 Metal-oxide-semiconductor field-effect transistor (mosfet) and method for fabricating the same
06/07/2012WO2012071991A1 Chip cooling structure
06/07/2012WO2012071988A1 Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same
06/07/2012WO2012071986A1 Method for manufacturing dual-gate oxide semiconductor devices
06/07/2012WO2012071843A1 Semiconductor structure and method of manufacturing the same
06/07/2012WO2012071824A1 Mosfet and manufacturing method thereof
06/07/2012WO2012071823A1 Semiconductor structure and manufacturing method for the same
06/07/2012WO2012071822A1 Mosfet and manufacturing method for the same
06/07/2012WO2012071814A1 Semiconductor device and manufacturing method thereof
06/07/2012WO2012071769A1 Mosfet device and manufacturing method thereof
06/07/2012WO2012071641A1 Functionalized semiconducting polymers for use in organic photovoltaic devices
06/07/2012WO2012054032A8 Embedded wells merged pn/schottky diode
06/07/2012WO2012050684A3 Sti-aligned ldmos drift implant to enhance manufacturability while optimizing rdson and safe operating area
06/07/2012WO2012040075A3 Non-planar device having uniaxially strained fin and method of making same
06/07/2012WO2012037136A3 Improved lateral uniformity in silicon recess etch
06/07/2012US20120142178 Semiconductor device and method of manufacturing the same
06/07/2012US20120142156 Insulated gate type semiconductor device and method for fabricating the same
06/07/2012US20120140929 Integrated circuits secure from invasion and methods of manufacturing the same
06/07/2012US20120140570 EEPROM with Increased Reading Speed
06/07/2012US20120140562 Nonvolatile memory device and method of making the same
06/07/2012US20120140424 Thin-film transistor forming substrate, semiconductor device, and electric apparatus
06/07/2012US20120140137 Liquid crystal display device and method of making same
06/07/2012US20120139872 Semiconductor device
06/07/2012US20120139630 Compound semiconductor device and method of manufacturing the same
06/07/2012US20120139623 Semiconductor element, semiconductor device, and electric power converter
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