Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2012
08/23/2012US20120211868 Ultra-low voltage coefficient capacitors
08/23/2012US20120211866 Metal-insulator-metal capacitor and a method of fabricating the same
08/23/2012US20120211865 Deep trench capacitor with conformally-deposited conductive layers having compressive stress
08/23/2012US20120211864 Inductor
08/23/2012US20120211863 Method of eliminating micro-trenches during spacer etch
08/23/2012US20120211862 Soi substrate and method for manufacturing soi substrate
08/23/2012US20120211860 Semiconductor storage device and manufacturing method thereof
08/23/2012US20120211859 Schottky diode
08/23/2012US20120211857 Pyroelectric detector, pyroelectric detection device, and electronic instrument
08/23/2012US20120211847 Semiconductor device including a magnetic tunnel junction and method of manufacturing the same
08/23/2012US20120211846 Mram device and method of assembling same
08/23/2012US20120211845 Integrated Circuit with Sensor and Method of Manufacturing Such an Integrated Circuit
08/23/2012US20120211844 Semiconductor Device Comprising Self-Aligned Contact Elements and a Replacement Gate Electrode Structure
08/23/2012US20120211835 Semiconductor-on-insulator with back side connection
08/23/2012US20120211834 Multi-level lateral floating coupled capacitor transistor structures
08/23/2012US20120211833 Super-junction semiconductor device
08/23/2012US20120211832 Split-gte lateral diffused metal oxide semiconductor devise
08/23/2012US20120211829 Field-effect transistor and method of creating same
08/23/2012US20120211828 Hybrid split gate semiconductor
08/23/2012US20120211827 Method of forming an integrated power device and structure
08/23/2012US20120211826 Trench DMOS Transistor with Reduced Gate-to-Drain Capacitance
08/23/2012US20120211825 Trench MOSFET and Method for Fabricating Same
08/23/2012US20120211824 vertical transistor having a gate structure formed on a buried drain region and a source region overlying the upper most layer of the gate structure
08/23/2012US20120211823 Semiconductor memory device and method of manufacturing the same
08/23/2012US20120211822 Non-volatile memory device and method for fabricating the same
08/23/2012US20120211820 Semiconductor memory device and method for manufacturing same
08/23/2012US20120211819 Ultrahigh density vertical nand memory device and method of making thereof
08/23/2012US20120211818 Semiconductor devices
08/23/2012US20120211816 Semiconductor memory device and method for manufacturing same
08/23/2012US20120211814 trench structure and method of forming the trench structure
08/23/2012US20120211812 High-speed high-power semiconductor devices
08/23/2012US20120211811 Magnetic memory and manufacturing method thereof
08/23/2012US20120211810 Transistor with embedded si/ge material having enhanced across-substrate uniformity
08/23/2012US20120211809 Semiconductor device, manufacturing method thereof, and electronic appliance
08/23/2012US20120211808 Fin-transistor formed on a patterned sti region by late fin etch
08/23/2012US20120211807 System and Method for Source/Drain Contact Processing
08/23/2012US20120211806 Normally-Off Semiconductor Switches and Normally-Off JFETS
08/23/2012US20120211805 Cavity structures for mems devices
08/23/2012US20120211803 Semiconductor device and manufacturing method with improved epitaxial quality of iii-v compound on silicon surfaces
08/23/2012US20120211802 Field effect transistor, semiconductor switch circuit, and communication apparatus
08/23/2012US20120211801 Group iii nitride laminated semiconductor wafer and group iii nitride semiconductor device
08/23/2012US20120211800 GaN HEMTs with a Back Gate Connected to the Source
08/23/2012US20120211799 Power semiconductor module and method of manufacturing a power semiconductor module
08/23/2012US20120211798 Adjustable field effect rectifier
08/23/2012US20120211796 Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same
08/23/2012US20120211784 Nitride semiconductor stacked structure and method for manufacturing same and nitride semiconductor device
08/23/2012US20120211770 Semiconductor device, combined substrate, and methods for manufacturing them
08/23/2012US20120211769 Sic single crystal wafer and process for production thereof
08/23/2012US20120211768 Wide-band-gap reverse-blocking mos-type semiconductor device
08/23/2012US20120211765 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
08/23/2012US20120211764 Semiconductor device and method for manufacturing semiconductor device
08/23/2012US20120211763 Nitride semiconductor substrate and method of manufacturing the same
08/23/2012US20120211762 Semiconductor device, method of manufacturing semiconductor device and electronic circuit
08/23/2012US20120211761 Semiconductor device and method for manufacturing semiconductor device
08/23/2012US20120211760 Semiconductor device and method of manufacturing the same, and power supply apparatus
08/23/2012US20120211759 Structure and method to reduce wafer warp for gallium nitride on silicon wafer
08/23/2012US20120211758 Thin-film transistor device manufacturing method, thin-film transistor device, and display device
08/23/2012US20120211757 Semiconductor device and method of manufacturing the same
08/23/2012US20120211755 Thin film transistor, manufacturing method of thin film transistor and display
08/23/2012US20120211753 Display substrate and method of manufacturing the display substrate
08/23/2012US20120211750 Semiconductor device and light-emitting device using the same
08/23/2012US20120211748 Method of Dicing a Wafer
08/23/2012US20120211747 Pn junctions and methods
08/23/2012US20120211745 Thin film transistor and method for manufacturing the same
08/23/2012US20120211744 Semiconductor device
08/23/2012US20120211727 Method of Producing Precision Vertical and Horizontal Layers in a Vertical Semiconductor Structure
08/23/2012US20120211726 Forming A Non-Planar Transistor Having A Quantum Well Channel
08/23/2012US20120211725 Nitride semiconductor element and manufacturing method therefor
08/23/2012US20120211723 Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle
08/23/2012DE112010004355T5 Damascene-Gate-Elektroden mit kurzschlussgeschützten Bereichen Damascene gate electrodes with short-circuit protected areas
08/23/2012DE112009004595T5 Halbleitervorrichtung Semiconductor device
08/23/2012DE112009003522T5 Beschleunigungssensor Acceleration sensor
08/23/2012DE112007000668B4 Gruppe-III-Nitrid-Leistungshalbleiter-Bauteil Group III-nitride power semiconductor component
08/23/2012DE102012201917A1 Nitrid-Halbleitersubstrat und Verfahren zu dessen Herstellung The nitride semiconductor substrate and process for its preparation
08/23/2012DE102012101217A1 Normalerweise ausgeschaltete Halbleiterschalter und normalerweise ausgeschaltete JFETs Normally off semiconductor switch and normally-off JFET
08/23/2012DE102012003118A1 Tiefgrabenkondensator mit konform aufgebrachten leitenden Schichten, die Druckspannung aufweisen Have deep grave capacitor with applied compliant conductive layers, the compressive stress
08/23/2012DE102011084525A1 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
08/23/2012DE102011004506A1 Herstellungsverfahren für ein Halbleiterbauelement und Halbleiterbauelement als Stegtransistor, der auf einem strukturierten STI-Gebiet durch eine späte Stegätzung hergestellt ist Manufacturing method for a semiconductor device and semiconductor device as a web transistor which is fabricated on a structured STI region by a late Stegätzung
08/23/2012DE102011004411A1 Siliziumbasierter Heterobipolartransistor mit einer Kollektorschicht aus einem III-V-Halbleiter Of silicon heterobipolar transistor having a collector layer of a III-V semiconductor
08/23/2012DE102011004322A1 Halbleiterbauelement mit selbstjustierten Kontaktelementen und einer Austauschgateelektrodenstruktur A semiconductor device with self-aligned contact elements and a replacement gate electrode structure
08/23/2012DE102007034349B4 Halbleitervorrichtung, welche mit einer schwebenden Elektrode versehen ist A semiconductor device, which is provided with a floating electrode
08/23/2012DE102007024113B4 Halbleitervorrichtung mit isoliertem Gate und Verfahren zur Herstellung derselben A semiconductor device comprising insulated gate and method of manufacturing the same
08/23/2012DE102004018153B9 Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung High voltage JFET with retrograde gate well and method for its manufacture
08/23/2012DE10055446B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
08/22/2012EP2490247A1 Silicon carbide substrate manufacturing method and silicon carbide substrate
08/22/2012EP2489668A1 Tetraazapyrene compounds and their use as n-type semiconductors
08/22/2012EP2489075A1 Logic circuit and semiconductor device
08/22/2012EP2489032A1 Liquid crystal display device and electronic apparatus having the same
08/22/2012EP1705715B1 Semiconductor device
08/22/2012EP1509949B1 Formation of lattice-tuning semiconductor substrates
08/22/2012EP1410444B1 Insulating Gate AlGaN/GaN HEMT
08/22/2012CN202395025U Substrate
08/22/2012CN202394983U N type silicon on insulator transversal double diffusion field effect transistor
08/22/2012CN202394982U Anti-radiation MOS component structure based on part-depletion type SOI process
08/22/2012CN202394981U Superjunction VDMOS terminal structure with discontinuity of oxide layer on surface field
08/22/2012CN202394980U Superjunction vertical double-diffused metal oxide semiconductor tube
08/22/2012CN202394979U Terminal structure of vertical double-diffused metal oxide field effect transistor
08/22/2012CN202394978U Structure of low-potential barrier Schottky diode
08/22/2012CN202394977U 半导体元件及半导体装置 The semiconductor element and semiconductor device
08/22/2012CN202394972U Schottky rectifier bridge
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