Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/22/2012US20120292612 Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane
11/22/2012US20120292610 Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices
11/22/2012US20120292598 Epitaxial source/drain contacts self-aligned to gates for deposited fet channels
11/22/2012US20120292597 Self-Aligned Contacts in Carbon Devices
11/22/2012US20120292596 Graphene Base Transistor Having Compositionally-Graded Collector Barrier Layer
11/22/2012US20120292593 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
11/22/2012US20120292591 High-Voltage Electronic Device
11/22/2012US20120292590 Optical component
11/22/2012DE112011100421T5 Seibstausgerichtete Kontakte für Feldeffekttransistoreinheiten Seibstausgerichtete contacts for field effect transistor units
11/22/2012DE112010004367T5 Selbstausgerichteter Graphentransistor Self-Aligned graphene transistor
11/22/2012DE112010004307T5 Silicium-auf Isolator-Hybridwafer mit Doppel-Box-Rückgate und Kanälen mit verbesserter Beweglichkeit Silicon-on-insulator wafer-hybrid double-box back gate and canals with improved mobility
11/22/2012DE112009005320T5 Leistungshalbleiterbauteil Power semiconductor component
11/22/2012DE102012206998A1 Halbleiterbauelemente mit eingekapselten Isolationsgebieten und zugehörige Fertigungsverfahren Semiconductor devices encapsulated insulation areas and associated manufacturing processes
11/22/2012DE102012206478A1 Extrem-dünner-Halbleiter-auf-Isolator(ETSOI)-FET mit einem Rück-Gate und verringerter Parasitärkapazität sowie Verfahren zu dessen Herstellung Ultra-thin semiconductor-on-insulator (ETSOI)-FET having a back gate and a reduced parasitic capacitance, as well as method for its preparation
11/22/2012DE102011075888A1 Halbleitervorrichtung mit mindestens einem Kontakt und Herstellungsverfahren für eine Halbleitervorrichtung mit mindestens einem Kontakt A semiconductor device having at least one contact and manufacturing method of a semiconductor device having at least one contact
11/22/2012DE102007040587B4 Halbleitervorrichtung und Herstellungsverfahren derselben A semiconductor device and manufacturing method thereof
11/22/2012DE102005017288B4 Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Graben in einem Siliziumcarbid-Halbleitersubstrat A method of manufacturing a semiconductor device having a trench in a silicon carbide semiconductor substrate
11/21/2012EP2525410A1 Insulated gate bipolar transistor and manufacturing method thereof
11/21/2012EP2525409A1 Graphene base transistor having compositionally-graded collector barrier layer
11/21/2012EP2525408A1 Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices
11/21/2012EP2525407A2 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
11/21/2012EP2525405A2 Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane
11/21/2012EP2524947A1 Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom
11/21/2012CN202549849U Schottky diode
11/21/2012CN202549848U Display device, array substrate and thin film transistor
11/21/2012CN202549847U Diode with improved recovery softness characteristic
11/21/2012CN202549846U Novel semiconductor field effect transistor
11/21/2012CN202549819U Large-power triode
11/21/2012CN1943039B 薄膜晶体管面板 The thin film transistor panel
11/21/2012CN102792452A Production method for semiconductor device and semiconductor device
11/21/2012CN102792451A Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor
11/21/2012CN102792450A Signal distribution circuit, signal distribution device, and display device
11/21/2012CN102792449A 半导体晶体管 Transistors
11/21/2012CN102792448A Semiconductor device
11/21/2012CN102792447A Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
11/21/2012CN102792446A Method for producing silicon carbide semiconductor device
11/21/2012CN102792444A Semiconductor device and method for manufacturing semiconductor device
11/21/2012CN102792430A Semiconductor substrate, method for manufacturing semiconductor substrate, electronic device, and method for manufacturing electronic device
11/21/2012CN102792429A Methods of forming an array of memory cells, methods of forming a plurality of field effect transistors, methods of forming source/drain regions and isolation trenches, and methods of forming a series of spaced trenches into a substrate
11/21/2012CN102792422A Semiconductor transistor production method
11/21/2012CN102792170A 物理量传感器 Physical sensors
11/21/2012CN102792168A Mems传感器 Mems Sensor
11/21/2012CN102792130A Flowrate sensor and flowrate detection device
11/21/2012CN102790097A Power diode device and preparation method thereof
11/21/2012CN102790096A Film transistor as well as manufacturing method thereof, array substrate and display equipment
11/21/2012CN102790095A Method for manufacturing semiconductor device
11/21/2012CN102790094A Device and display unit
11/21/2012CN102790093A Thin film transistor pixel structure and thin film transistor display device
11/21/2012CN102790092A Transverse high-voltage DMOS (double-diffusion metal oxide semiconductor) device
11/21/2012CN102790091A Green transistor, nanometer silicon FeRAM and driving method thereof
11/21/2012CN102790090A LDMOS device based on high K material
11/21/2012CN102790089A Radio frequency LDMOS device with buried layer below drain electrode
11/21/2012CN102790088A Breakdown voltage-adjustable RF-LDMOS device
11/21/2012CN102790087A nLDMOS (Laterally Diffused Metal Oxide Semiconductor) device with ESD (electronic static discharge) protection function
11/21/2012CN102790086A LDMOS device with stepped multiple discontinuous filed plate and manufacturing method for LDMOS device
11/21/2012CN102790085A Semi-conductor device and production method thereof
11/21/2012CN102790084A Germanium and III-V mixed coplanar silicon on insulator (SOI) semi-conductor structure and preparation method thereof
11/21/2012CN102790083A Improved silicon-controlled structure and production process thereof
11/21/2012CN102790082A Ie-type trench gate igbt
11/21/2012CN102790081A Self-aligned metal silicide Ge-Si heterojunction bipolar transistor and preparation method thereof
11/21/2012CN102790080A Self-aligning lifting base region silicon germanium heterojunction bipolar transistor and manufacturing method thereof
11/21/2012CN102790079A Metal silicide self-aligned germanium silicon heterojunction bipolar transistor and preparation method thereof
11/21/2012CN102790078A Semiconductor device and method for manufacturing the same
11/21/2012CN102790077A Insulated gate bipolar transistor
11/21/2012CN102790076A Semiconductor device, and method of manufacturing the same
11/21/2012CN102790075A Display device and manufacturing method of the same
11/21/2012CN102790067A Sensor and manufacturing method thereof
11/21/2012CN102790059A Semiconductor device having a bonding pad and shield structure and method of manufacturing the same
11/21/2012CN102790058A Semiconductor device having a bonding pad and method of manufacturing the same
11/21/2012CN102790054A Germanium and III-V mixed coplanar semi-conductor structure and preparation method thereof
11/21/2012CN102790047A Series grounded-gate N-channel metal oxide semiconductor (ggNMOS) transistor, preparation method thereof and multiple voltage drain drain (VDD)-voltage source source (VSS) chip
11/21/2012CN102790006A Semiconductor structure and preparation method thereof
11/21/2012CN102789989A Polycrystalline silicon transistor, display device and manufacturing method of polycrystalline silicon transistor
11/21/2012CN102789986A Semiconductor apparatus and manufacturing method thereof
11/21/2012CN102789985A Semiconductor apparatus and manufacturing method thereof
11/21/2012CN102789982A Enhanced A1N/GaN high-electron mobility transistor and fabrication method thereof
11/21/2012CN102789979A Schottky diode and method of formation of Schottky diode
11/21/2012CN102789977A Vertical metal oxide semiconductor rectifier diode and production method thereof
11/21/2012CN102789971A Poly-silicon TFT and ploy-silicon array substrate and manufacturing methods thereof as well as display equipment
11/21/2012CN102789963A Making method and structure for polycrystalline capacitor
11/21/2012CN102789107A 液晶显示面板 The liquid crystal display panel
11/21/2012CN102787309A Alumina thin film and preparation method and application thereof
11/21/2012CN102148242B Silicon controlled device with double-conduction path
11/21/2012CN102130182B Current regulation diode chip and manufacturing method thereof
11/21/2012CN102117829B Fin type transistor structure and manufacturing method thereof
11/21/2012CN102104069B Fin-type transistor structure and manufacturing method thereof
11/21/2012CN102054845B Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device based on silicon on insulator (SOI) and method for injecting device
11/21/2012CN102054836B Thyristor for electrostatic discharge
11/21/2012CN102054774B VDMOS (vertical double diffused metal oxide semiconductor) transistor compatible LDMOS (laterally diffused metal oxide semiconductor) transistor and manufacturing method thereof
11/21/2012CN101903993B Method for forming semiconductor thin film and method for manufacturing thin film semiconductor device
11/21/2012CN101853854B Groove power MOS component with improved type terminal structure and manufacturing method thereof
11/21/2012CN101847656B Insulated gate bipolar transistor
11/21/2012CN101840934B Bottom-drain LDMOS power MOSFET structure having a top drain strap and manufacture method thereof
11/21/2012CN101777586B Hybrid junction source/drain field effect transistor and preparation method thereof
11/21/2012CN101461062B Power ic device and method for manufacturing the same
11/20/2012USRE43819 Thin film transistor array substrate and method of fabricating the same
11/20/2012USRE43807 Microcircuit package having ductile layer
11/20/2012US8316336 Method and mechanism for modeling interconnect structures for integrated circuits
11/20/2012US8315101 Non-volatile memory and semiconductor device
11/20/2012US8314870 Solid-state imaging device and electronic apparatus
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