Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2013
12/17/2013US8609262 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
12/17/2013US8607638 Micro electro mechanical systems component
12/17/2013CA2444681C Nanoelectronic devices and circuits
12/12/2013WO2013185089A1 Double aluminum nitride spacers for nitride high electron-mobility transistors
12/12/2013WO2013185088A1 Enhancement-mode high electron mobility transistor structure and method of making same
12/12/2013WO2013185013A2 Back plate apparatus with multiple layers having non-uniform openings
12/12/2013WO2013184850A2 Normally-off gallium nitride transistor with insulating gate and method of making same
12/12/2013WO2013184654A1 Ohmic contact to semiconductor layer
12/12/2013WO2013184606A1 Gated diode structure for eliminating rie damage from cap removal
12/12/2013WO2013184065A1 A method of manufacturing a structure adapted to be transferred to a non-crystalline layer and a structure manufactured using said method
12/12/2013WO2013183733A1 Thin film transistor
12/12/2013WO2013183726A1 Thin film transistor
12/12/2013WO2013183677A1 Semiconductor device and method for manufacturing same
12/12/2013WO2013183495A1 Semiconductor device and method for manufacturing same
12/12/2013WO2013183393A1 Display device, manufacturing method, and electronic apparatus
12/12/2013WO2013183289A1 Thin film transistor, display panel, and method for manufacturing thin film transistor
12/12/2013WO2013183255A1 Thin-film transistor and method for manufacturing thin-film transistor
12/12/2013WO2013183254A1 Thin-film transistor and method for manufacturing thin-film transistor
12/12/2013WO2013183251A1 Thin-film transistor and method for manufacturing thin-film transistor
12/12/2013WO2013183230A1 Liquid crystal display apparatus and method for manufacturing liquid crystal display apparatus
12/12/2013WO2013183220A1 Method for manufacturing thin film transistor substrate
12/12/2013WO2013183158A1 Semiconductor device manufacturing method, and semiconductor device
12/12/2013WO2013183132A1 Electrode structure of solid type rechargeable battery
12/12/2013WO2013181915A1 Tft array substrate, method of fabricating same, and display device
12/12/2013WO2013181909A1 Thin-film transistor and array substrate and methods of fabricating same
12/12/2013WO2013181908A1 Array substrate, method of fabricating same, and display device
12/12/2013WO2013181905A1 Transistor, array substrate and manufacturing method thereof, liquid crystal panel, and display device
12/12/2013WO2013181902A1 Thin film transistor and manufacturing method thereof, array substrate, and display device
12/12/2013WO2013158986A3 A metal-semiconductor-metal (msm) heterojunction diode
12/12/2013US20130330919 Manufacturing process of gate stack structure with etch stop layer
12/12/2013US20130330896 Manufacturing method of silicon carbide semiconductor device
12/12/2013US20130330894 Method of manufacturing semiconductor device
12/12/2013US20130330892 Trench mosfet with trenched floating gates having thick trench bottom oxide as termination
12/12/2013US20130330888 In situ grown gate dielectric and field plate dielectric
12/12/2013US20130330887 Strained thin body cmos device having vertically raised source/drain stressors with single spacer
12/12/2013US20130330886 Method of forming thin film poly silicon layer and method of forming thin film transistor
12/12/2013US20130330877 Method for manufacturing semiconductor device
12/12/2013US20130329501 Semiconductor device with floating gate and electrically floating body
12/12/2013US20130329498 Memory cell having closed curve structure
12/12/2013US20130328189 Bump-on-Lead Flip Chip Interconnection
12/12/2013US20130328173 High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
12/12/2013US20130328171 Semiconductor structure
12/12/2013US20130328167 Self-aligned metal-insulator-metal (mim) capacitor
12/12/2013US20130328162 Homo-junction diode structures using fin field effect transistor processing
12/12/2013US20130328161 Spacer isolation in deep trench
12/12/2013US20130328159 Implementing isolated silicon regions in silicon-on-insulator (soi) wafers using bonded-wafer technique
12/12/2013US20130328157 Spacer isolation in deep trench
12/12/2013US20130328155 Generation of additional shapes on a photomask for a multiple exposure process
12/12/2013US20130328142 Integrated circuit with pressure sensor and manufacturing method
12/12/2013US20130328139 Micromachined monolithic 3-axis gyroscope with single drive
12/12/2013US20130328138 Method for producing semiconductor device and semiconductor device
12/12/2013US20130328137 Modified high-k gate dielectric stack
12/12/2013US20130328136 Structure and method for forming programmable high-k/metal gate memory device
12/12/2013US20130328135 Preventing fully silicided formation in high-k metal gate processing
12/12/2013US20130328134 Method and Apparatus for Improving Gate Contact
12/12/2013US20130328132 Power semiconductor device and method therefor
12/12/2013US20130328125 Protection component and electrostatic discharge protection device with the same
12/12/2013US20130328123 Semiconductor device
12/12/2013US20130328122 Split trench-gate mosfet with integrated schottky diode
12/12/2013US20130328121 Mosfet with improved performance through induced net charge region in thick bottom insulator
12/12/2013US20130328120 Semiconductor device
12/12/2013US20130328119 Non-volatile memory and manufacturing method thereof
12/12/2013US20130328118 Non-volatile memory using pyramidal nanocrystals as electron storage elements
12/12/2013US20130328115 Contact for High-K Metal Gate Device
12/12/2013US20130328114 Integrated Transistor and Anti-Fuse as Programming Element for a High-Voltage Integrated Circuit
12/12/2013US20130328113 Regenerative building block and diode bridge rectifier and methods
12/12/2013US20130328112 Semiconductor devices having improved gate height uniformity and methods for fabricating same
12/12/2013US20130328111 Recessing and capping of gate structures with varying metal compositions
12/12/2013US20130328110 Thin film hybrid junction field effect transistor
12/12/2013US20130328109 Structures and methods for electrically and mechanically linked monolithically integrated transistor and mems/nems devices
12/12/2013US20130328108 Ultra-high voltage sige hbt device and manufacturing method of the same
12/12/2013US20130328107 Semiconductor device
12/12/2013US20130328106 Semiconductor device and method for manufacturing semiconductor device
12/12/2013US20130328105 Narrow active cell ie type trench gate igbt and a method for manufacturing a narrow active cell ie type trench gate igbt
12/12/2013US20130328104 Semiconductor device and manufacturing method thereof
12/12/2013US20130328103 Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals
12/12/2013US20130328069 Active device, driving circuit structure, and display panel
12/12/2013US20130328065 Semiconductor element, semiconductor device, and semiconductor element manufacturing method
12/12/2013US20130328064 Method and system for transient voltage suppressors
12/12/2013US20130328063 Method for manufacturing semiconductor substrate, and semiconductor device
12/12/2013US20130328062 Semiconductor device and method for producing the same
12/12/2013US20130328061 Normally-off gallium nitride transistor with insulating gate and method of making the same
12/12/2013US20130328060 LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
12/12/2013US20130328059 Method Of Manufacturing Gallium Nitride Substrate And Gallium Nitride Substrate Manufactured Thereby
12/12/2013US20130328054 Gallium nitride based semiconductor device and method of manufacturing the same
12/12/2013US20130328053 Thin Film Transistor with Increased Doping Regions
12/12/2013US20130328052 Pixel structure, method of manufacturing pixel structure, and active device matrix substrate
12/12/2013US20130328051 Notched Display Layers
12/12/2013US20130328050 Semiconductor Device
12/12/2013US20130328049 Thin-film transistor substrate and method of manufacturing the same
12/12/2013US20130328048 Composite substrate, electronic component, and method of manufacturing composite substrate and electronic component
12/12/2013US20130328047 Structure for picking up a collector and method of manufacturing the same
12/12/2013US20130328045 Field effect transistor, display device , sensor, and method of manufacturing field effect transistor
12/12/2013US20130328044 Manufacturing method of semiconductor device
12/12/2013US20130328042 Precursor composition of oxide semiconductor, thin film transistor substrate including oxide semiconductor, and method of manufacturing thin film transistor substrate including oxide semiconductor
12/12/2013US20130328034 Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
12/12/2013US20130328033 Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
12/12/2013US20130328017 Side-gate defined tunable nanoconstriction in double-gated graphene multilayers
12/12/2013US20130328014 Gaas/ingaas axial heterostructure formation in nanopillars by catalyst-free selective area mocvd
12/12/2013US20130327380 Boron, Bismuth Co-Doping of Gallium Arsenide and Other Compounds for Photonic and Heterojunction Bipolar Transistor Devices
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