Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2013
12/19/2013DE102013105707A1 Halbleitervorrichtung, Übergitterschicht, welche in derselben verwendet wird, und Verfahren zur Herstellung der Halbleitervorrichtung A semiconductor device superlattice layer which is used in the same, and methods for producing the semiconductor device
12/19/2013DE102013104744B3 Method for manufacturing semiconductor device, involves etching gate dielectric layer, barrier layer, and metal layer to respective level within trench to form opening or to trench for forming further layers
12/19/2013DE102013103470A1 Struktur und Verfahren für einen Feldeffekttransistor Structure and method of a field effect transistor
12/19/2013DE102012105162A1 Integriertes Leistungshalbleiterbauelement, Herstellungsverfahren dafür und Chopperschaltung mit integriertem Halbleiterbauelement Integrated power semiconductor device, and manufacturing method thereof chopper circuit with an integrated semiconductor device
12/19/2013DE102008047159B4 Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device
12/18/2013EP2674982A1 Thermoelectric conversion element, method for producing thermoelectric conversion element, and thermoelectric conversion method
12/18/2013EP2674981A1 Active matrix substrate, display panel, and display device
12/18/2013EP2674980A1 Lateral-type semiconductor device and method for manufacturing same
12/18/2013EP2674979A2 Trench Gate IGBT and a Method for Manufacturing the same
12/18/2013EP2674978A1 Tunnel field effect transistor device and method for making the device
12/18/2013EP2674966A2 Silicon carbide switching devices including P-type channels and methods of forming the same
12/18/2013EP2673807A2 Magnetic element with improved out-of-plane anisotropy for spintronic applications
12/18/2013EP2673806A1 Semiconductor device and related fabrication methods
12/18/2013EP2673805A1 Sensing of photons
12/18/2013EP2673800A1 High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis
12/18/2013EP2673799A1 Epitaxy of high tensile silicon alloy for tensile strain applications
12/18/2013EP2113130B1 Multi-layer source/drain stressor
12/18/2013EP1652219B1 Anchors for microelectromechanical systems having an soi substrate, and method of fabricating same
12/18/2013EP1616864B1 Quinoxaline derivatives, and organic semiconductor devices, electroluminescent devices and electronic appliances, made by using the derivatives
12/18/2013EP1566843B1 Manufacturing method of a silicon carbide semiconductor device
12/18/2013EP0888642B1 Semiconductor device
12/18/2013CN203351612U Schottky diode
12/18/2013CN203351611U Polarization doping-based GaN transverse Schottky diode
12/18/2013CN203351610U Modulated doping-based GaN Schottky diode
12/18/2013CN203351609U Polarized doping-based GaN Schottky diode
12/18/2013CN203351608U Groove-type field effect transistor
12/18/2013CN203351607U Insulated gate-type field effect transistor for electrostatic protection
12/18/2013CN203351606U Groove type insulated gate field effect transistor with electrostatic protection
12/18/2013CN203351605U High-voltage semiconductor device
12/18/2013CN203351604U IGBT device
12/18/2013CN203351603U Semiconductor device
12/18/2013CN203351602U Grid-control semiconductor device having novel grid composition
12/18/2013CN203351598U Embedded gate grounded NMOS triggered silicon controlled rectifier transient voltage inhibitor
12/18/2013CN203351578U Field-effect tube integrated with thermistor
12/18/2013CN103460424A Active matrix dilute source enabled vertical organic light emitting transistor
12/18/2013CN103460392A Semiconductor device and method for manufacturing same
12/18/2013CN103460391A Semiconductor device and display device
12/18/2013CN103460390A Silicon carbide vertical field effect transistor
12/18/2013CN103460389A P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system
12/18/2013CN103460388A Silicon carbide semiconductor device fabrication method
12/18/2013CN103460387A Electrode structures for arrays of nanostructures and methods thereof
12/18/2013CN103460386A Semiconductor device and method for producing same
12/18/2013CN103460375A Method of driving nonvolatile semiconductor device
12/18/2013CN103460374A Magnetic memory
12/18/2013CN103460367A Wafer testing method for power switch
12/18/2013CN103460360A Semiconductor element and method for producing same
12/18/2013CN103460359A Method for manufacturing nitride electronic devices
12/18/2013CN103460358A Forming borderless contact for transistors in a replacement metal gate process
12/18/2013CN103460357A Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
12/18/2013CN103460356A Method for producing a semiconductor component comprising an integrated lateral resistor
12/18/2013CN103460355A Semiconductor device having amplification factor with less dependence on current value
12/18/2013CN103460351A Cu alloy film, and display device and electronic device each equipped with same
12/18/2013CN103460270A Active matrix substrate, display device, and active matrix substrate manufacturing method
12/18/2013CN103457463A Structure and method for a switched circuit device
12/18/2013CN103456798A Tvs device and manufacturing method thereof
12/18/2013CN103456797A TVS device and manufacturing method
12/18/2013CN103456796A Groove-type Schottky power device structure and method for manufacturing same
12/18/2013CN103456795A Thin film transistor, manufacturing method thereof, array substrate and display device
12/18/2013CN103456794A Method for manufacturing transistor
12/18/2013CN103456793A Thin film transistor, thin film transistor array panel and manufacturing method thereof
12/18/2013CN103456792A Semiconductor element structure
12/18/2013CN103456791A Trench power MOSFET
12/18/2013CN103456790A Vertical power mosfet and methods of forming the same
12/18/2013CN103456789A Self-aligned implantation process for forming junction isolation regions
12/18/2013CN103456788A Vertical power mosfet and methods for forming the same
12/18/2013CN103456787A Transistor device and method for manufacturing the same
12/18/2013CN103456786A Mos transistor structure and manufacturing method thereof
12/18/2013CN103456785A Semiconductor structure and manufacturing process thereof
12/18/2013CN103456784A High-voltage P-type LDMOS (laterally diffused metal oxide semiconductor) device and manufacturing method
12/18/2013CN103456783A High-breakdown-voltage P-type LDMOS (laterally diffused metal oxide semiconductor) device and manufacturing method
12/18/2013CN103456782A Semiconductor device and production method thereof
12/18/2013CN103456781A Compound semiconductor transistor with self aligned gate
12/18/2013CN103456780A Epitaxy improved structure of pseudo crystal high electronic mobility transistor and heterojunction bipolar transistor and processing method thereof
12/18/2013CN103456779A High-voltage vertical power component
12/18/2013CN103456778A Gated diode, battery charging assembly and generator assembly
12/18/2013CN103456777A Heterojunction bipolar transistor structure with high current gain and processing method thereof
12/18/2013CN103456776A Ultrahigh-frequency transistor chip
12/18/2013CN103456775A Metal gate electrode of a semiconductor device
12/18/2013CN103456774A Semiconductor device having non-orthogonal element
12/18/2013CN103456773A Schottky diode and production method thereof
12/18/2013CN103456772A Semiconductor device and method for manufacturing the same
12/18/2013CN103456771A Structure for achieving control of service life of carrier in semiconductor device and manufacturing method thereof
12/18/2013CN103456770A Semiconductor device having embedded strain-inducing pattern and method of forming the same
12/18/2013CN103456769A Semiconductor Device with Trench Structures
12/18/2013CN103456768A Semiconductor isolation structure with air gaps in deep trenches
12/18/2013CN103456767A Mos structure and manufacturing method thereof
12/18/2013CN103456744A Array substrate, preparing method of array substrate and display device
12/18/2013CN103456743A Array substrate, manufacturing method of array substrate, flexible display device and electronic device
12/18/2013CN103456742A Array substrate, manufacturing method of array substrate and display device
12/18/2013CN103456730A ESD device structure for BCD process
12/18/2013CN103456722A Latch-up robust scr-based devices
12/18/2013CN103456720A Esd protection device for circuits with multiple power domains
12/18/2013CN103456710A Mos device and manufacturing method thereof
12/18/2013CN103456693A Middle in-situ doped sige junctions for pmos devices
12/18/2013CN103456686A Method of manufacturing semiconductor device
12/18/2013CN103456640A Semiconductor structure composed of field-effect transistor (fet) and method thereof
12/18/2013CN103456639A Vertical channel transistor with self-aligned gate electrode and method for fabricating the same
12/18/2013CN103456638A Self-alignment GaAs FinFET structure and manufacturing method thereof
12/18/2013CN103456633A Mos transistor and forming method thereof
12/18/2013CN103456632A Mos transistor and forming method thereof
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