Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2013
12/19/2013US20130337642 Methods and devices for forming nanostructure monolayers and devices including such monolayers
12/19/2013US20130337624 Metal oxide semiconductor field effect transistor (mosfet) gate termination
12/19/2013US20130337623 Quantum-well-based semiconductor devices
12/19/2013US20130337619 Compound semiconductor device and method for manufacturing the same
12/19/2013US20130337618 Transistor device with reduced gate resistance
12/19/2013US20130337617 Liquid crystal display device and method of fabricating the same
12/19/2013US20130337607 Deposition method and method for manufacturing semiconductor device
12/19/2013US20130337567 Nanowire field-effect transistor biosensor with improved sensitivity
12/19/2013US20130336070 Apparatuses and methods to modify pillar potential
12/19/2013US20130336045 Spin transfer torque memory (sttm) device with half-metal and method to write and read the device
12/19/2013US20130335667 Thin film transistor array panel, liquid crystal display, and method to repair the same
12/19/2013US20130335134 Semiconductor device and system using the same
12/19/2013US20130335109 Method of test probe alignment control
12/19/2013US20130334670 Semiconductor device and fabrication method thereof
12/19/2013US20130334667 Alkaline Etching Liquid for Texturing a Silicon Wafer Surface
12/19/2013US20130334666 Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and its alloys with AlN at Low Temperatures
12/19/2013US20130334665 Semiconductor device
12/19/2013US20130334664 Interface control in a bipolar junction transistor
12/19/2013US20130334657 Planar interdigitated capacitor structures and methods of forming the same
12/19/2013US20130334655 Semiconductor device and method of manufacturing the same
12/19/2013US20130334654 Semiconductor device and method of manufacturing the same
12/19/2013US20130334653 Semiconductor Device with an Edge Termination Structure
12/19/2013US20130334652 Nitride shallow trench isolation (sti) structures
12/19/2013US20130334651 Dual shallow trench isolation liner for preventing electrical shorts
12/19/2013US20130334650 Semiconductor structure and process thereof
12/19/2013US20130334649 Semiconductor device having variably laterally doped zone with decreasing concentration formed in the termination region
12/19/2013US20130334648 Methods and Apparatus for High Voltage Diodes
12/19/2013US20130334647 Semiconductor device
12/19/2013US20130334631 Memory cells, semiconductor device structures, memory systems, and methods of fabrication
12/19/2013US20130334630 Memory cells, semiconductor device structures, memory systems, and methods of fabrication
12/19/2013US20130334625 Method for fabricating patterned polyimide film and applications thereof
12/19/2013US20130334620 MEMS Devices and Fabrication Methods Thereof
12/19/2013US20130334619 Integrated circuit with ion sensitive sensor and manufacturing method
12/19/2013US20130334618 Metal oxide semiconductor field effect transistor (mosfet) gate termination
12/19/2013US20130334617 Gate structure having lightly doped region
12/19/2013US20130334616 Reliable contacts
12/19/2013US20130334615 FinFETs and the Methods for Forming the Same
12/19/2013US20130334612 Integrated circuit and method of fabricating same
12/19/2013US20130334607 Semiconductor structure and fabrication method
12/19/2013US20130334606 FinFET with High Mobility and Strain Channel
12/19/2013US20130334605 Mechanisms for forming ultra shallow junction
12/19/2013US20130334603 Isolation structure for semiconductor devices
12/19/2013US20130334602 Continuously scalable width and height semiconductor fins
12/19/2013US20130334601 High voltage trench transistor
12/19/2013US20130334600 Transistor device and manufacturing method thereof
12/19/2013US20130334598 Semiconductor device and method for manufacturing same
12/19/2013US20130334597 Power semiconductor device
12/19/2013US20130334596 Semiconductor device and fabricating method thereof
12/19/2013US20130334595 Structure and method for a field effect transistor
12/19/2013US20130334594 Recessed gate memory apparatuses and methods
12/19/2013US20130334593 Three-dimensional semiconductor memory devices and methods of fabricating the same
12/19/2013US20130334592 Semiconductor Device
12/19/2013US20130334591 Method for manufacturing semiconductor device and semiconductor device
12/19/2013US20130334590 Semiconductor device and method for manufacturing same
12/19/2013US20130334589 Semiconductor device and method of manufacturing the same
12/19/2013US20130334588 Field effect transistor and manufacturing method thereof
12/19/2013US20130334586 Non-self-aligned non-volatile memory structure
12/19/2013US20130334585 Semiconductor device, memory system including the same, and method of manufacturing the same
12/19/2013US20130334584 Integration of memory, high voltage and logic devices
12/19/2013US20130334583 Semiconductor devices including vertical transistors, electronic systems including the same and methods of manufacturing the same
12/19/2013US20130334581 Device with MOS Device Including a Secondary Metal and PVD Tool with Target for Making Same
12/19/2013US20130334580 Replacement metal gate processing with reduced interlevel dielectric layer etch rate
12/19/2013US20130334579 Manufacturing method of a graphene-based electrochemical sensor, and electrochemical sensor
12/19/2013US20130334574 Monolithic Integrated Composite Group III-V and Group IV Device
12/19/2013US20130334573 Multi-Channel HEMT
12/19/2013US20130334572 Junctionless accumulation-mode devices on decoupled prominent architectures
12/19/2013US20130334571 Epitaxial growth of smooth and highly strained germanium
12/19/2013US20130334570 Integrated structure of compound semiconductor devices
12/19/2013US20130334569 Semiconductor structure and method for manufacutring the same
12/19/2013US20130334568 Multilayer substrate structure and method of manufacturing the same
12/19/2013US20130334566 Power semiconductor device and method for manufacturing such a power semiconductor device
12/19/2013US20130334565 Method of Manufacturing a Semiconductor Device Using an Impurity Source Containing a Metallic Recombination Element and Semiconductor Device
12/19/2013US20130334564 Monolithic compound semiconductor structure
12/19/2013US20130334542 Normally-off power jfet and manufacturing method thereof
12/19/2013US20130334541 Three dimensional strained semiconductors
12/19/2013US20130334540 Compound semiconductor device and manufacturing method thereof
12/19/2013US20130334538 High electron mobility transistor structure and method
12/19/2013US20130334536 SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOx
12/19/2013US20130334533 Semiconductor device
12/19/2013US20130334532 Stress gauge comprised of a piezoelectric material for use with integrated circuit products
12/19/2013US20130334530 Thin film transistor, manufacturing method therefor, and display device
12/19/2013US20130334528 Semiconductor device, fabrication method for the same, and display apparatus
12/19/2013US20130334527 Semiconductor device
12/19/2013US20130334526 Thin film transistor
12/19/2013US20130334525 Semiconductor device and method for manufacturing the same
12/19/2013US20130334523 Semiconductor device
12/19/2013US20130334522 Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same
12/19/2013US20130334513 Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device
12/19/2013US20130334500 Tunnel field effect transistor device and method for making the device
12/19/2013US20130334499 Method of isolating nanowires from a substrate
12/19/2013US20130334498 Transport conduits for contacts to graphene
12/19/2013US20130334497 Nanowire epitaxy on a graphitic substrate
12/19/2013US20130334496 Semiconductor device, superlattice layer used in the same, and method for manufacturing semiconductor device
12/19/2013US20130334495 Superlattice structure, semiconductor device including the same, and method of manufacturing the semiconductor device
12/19/2013US20130334432 Dosimetry Apparatus, Systems, and Methods
12/19/2013US20130333751 Coincident site lattice-matched growth of semiconductors on sustrates using compliant buffer layers
12/19/2013DE112012001395T5 Signalverarbeitungsschaltung Signal processing circuit
12/19/2013DE102013106113A1 Halbleitermodule und Verfahren zu ihrer Herstellung Semiconductor modules and methods for their preparation
12/19/2013DE102013106055A1 Verfahren zum Herstellen einer Halbleitervorrichtung mit einem Kontakteinsatz und einem metallischen Rekombinationselement sowie Halbleitervorrichtung A method of manufacturing a semiconductor device having a contact insert and a metallic and semiconductor device Rekombinationselement
12/19/2013DE102013105903A1 Übergitterstruktur, Halbleitervorrichtung dieselbe umfassend und Verfahren zur Herstellung der Halbleitervorrichtung Superlattice structure semiconductor device comprising the same and method of manufacturing the semiconductor device
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