Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2004
05/18/2004US6738031 Matrix array display devices with light sensing elements and associated storage capacitors
05/18/2004US6738005 D/A conversion circuit and semiconductor device
05/18/2004US6737929 Hybrid n+ and p+ gate-doped voltage variable capacitors to improve linear tuning range in voltage controlled oscillators
05/18/2004US6737813 EL element drive circuit and display panel
05/18/2004US6737731 Soft recovery power diode
05/18/2004US6737730 Semiconductor device including silicon substrate, silicon dioxide layer containing hydrogen, silicon nitride structure preventing diffusion of hydrogen at standard conditions, metal conductive layer heated to temperature below melting point
05/18/2004US6737724 Impurity concentration in channel region near interface with gate insulating film is lower than that in substrate, suppressing short channel effect; source-drain region does not overlap edge of isolation region, reducing current leakage
05/18/2004US6737722 Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof
05/18/2004US6737721 Shallow trench isolation structure for a bipolar transistor
05/18/2004US6737717 Thin-film transistor having lightly-doped drain structure
05/18/2004US6737716 Semiconductor device and method of manufacturing the same
05/18/2004US6737715 Field-effect transistor and corresponding manufacturing method
05/18/2004US6737714 FET having a gate electrode of a honeycomb structure
05/18/2004US6737710 Transistor structure having silicide source/drain extensions
05/18/2004US6737708 Thin-film transistor, liquid-crystal display device, and method of producing the same
05/18/2004US6737707 Semiconductor device and manufacturing method thereof
05/18/2004US6737706 Silicon on insulator device having trench isolation layer and method for manufacturing the same
05/18/2004US6737705 Insulated gate semiconductor device
05/18/2004US6737704 Transistor and method of manufacturing the same
05/18/2004US6737700 Non-volatile memory cell structure and method for manufacturing thereof
05/18/2004US6737695 Charge of capacitor of memory cell is used for switching transistor that connects bit line to voltage potential; small charge capacitance of memory cell suffices to switch transistor into on state
05/18/2004US6737691 Magnetic random access memory
05/18/2004US6737689 Thin diffusion barrier layer between the ferroelectric layer and the substrate
05/18/2004US6737688 Minimizing a size of the device isolation region, maximizing a size of the active regions; high integration
05/18/2004US6737687 Field-effect transistor device having a uniquely arranged gate electrode
05/18/2004US6737684 Bipolar transistor and semiconductor device
05/18/2004US6737683 Semiconductor device composed of a group III-V nitride semiconductor
05/18/2004US6737682 High voltage tolerant and low voltage triggering floating-well silicon controlled rectifier on silicon-on-insulator for input or output
05/18/2004US6737677 Wide bandgap semiconductor device and method for manufacturing the same
05/18/2004US6737676 Gate insulated field effect transistor and method of manufacturing the same
05/18/2004US6737674 Semiconductor device and fabrication method thereof
05/18/2004US6737673 Transistor having source/drain with graded germanium concentration
05/18/2004US6737672 Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
05/18/2004US6737668 Method of manufacturing structure with pores and structure with pores
05/18/2004US6737364 Method for fabricating crystalline-dielectric thin films and devices formed using same
05/18/2004US6737362 Method for manufacturing a thin gate dielectric layer for integrated circuit fabrication
05/18/2004US6737344 Method for manufacturing nonvolatile semiconductor memory with narrow variation in threshold voltages of memory cells
05/18/2004US6737342 Composite spacer scheme with low overlapped parasitic capacitance
05/18/2004US6737341 Semiconductor integrated circuit device and method for manufacturing the same
05/18/2004US6737332 Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same
05/18/2004US6737323 Method of fabricating a trench structure substantially filled with high-conductivity material
05/18/2004US6737322 Method for manufacturing semiconductor device
05/18/2004US6737321 Method of manufacturing flash memory device
05/18/2004US6737320 Double-doped polysilicon floating gate
05/18/2004US6737315 Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate
05/18/2004US6737309 With a gate insulation film of hafnium oxide formed as a high dielectric constant insulator over the entire structure
05/18/2004US6737306 Semiconductor device having a tapered gate and method of manufacturing the same
05/18/2004US6737305 Thin film transistor manufacture method
05/18/2004US6737304 Process of fabricating a semiconductor device
05/18/2004US6737303 Process for forming organic semiconducting layer having molecular alignment
05/18/2004US6737302 Manufacturing method for field-effect transistor
05/18/2004US6737301 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
05/18/2004US6737292 Method of fabricating an image sensor module at the wafer level and mounting on circuit board
05/18/2004US6737283 Method to isolate device layer edges through mechanical spacing
05/18/2004US6737202 Stabilized resist layer that provides for the prevention of interlayer intermixing with the deposition of subsequent resist layers; t-gate structure; optical lithography
05/18/2004US6737123 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system
05/18/2004US6736993 Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same
05/18/2004US6736895 Silicon crystallization method
05/18/2004US6736008 Inertia force sensor
05/13/2004WO2004040668A2 Field effect transistor assembly and an integrated circuit array
05/13/2004WO2004040667A1 Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
05/13/2004WO2004040666A1 Vertical integrated component, component arrangement and method for production of a vertical integrated component
05/13/2004WO2004040658A1 Floating gate transistors
05/13/2004WO2004040657A1 Organic semiconductor device
05/13/2004WO2004040656A1 Mos transistor on an soi substrate with a source through-connection
05/13/2004WO2004040655A2 Semiconductor component and method of manufacture
05/13/2004WO2004040654A1 Thyristor component with improved off-state properties in the reverse direction
05/13/2004WO2004040653A1 Thin film transistors and methods of manufacture thereof
05/13/2004WO2004040652A1 Bipolar transistor having a base region with a constant bandgap layer and a graded bandgap layer
05/13/2004WO2004040649A1 Semiconductor device and method for manufacturing semiconductor device
05/13/2004WO2004040648A1 Semiconductor device and method for manufacturing semiconductor device
05/13/2004WO2004040646A1 Electronic component with an integrated passive electronic component and method for production thereof
05/13/2004WO2004040643A1 Method for producing a transistor structure
05/13/2004WO2004040638A1 Gallium indium nitride arsenide hetero-field-effect transistor, its manufacturing method, and transmitter/receiver using same
05/13/2004WO2004040637A1 Semiconductor component and method of manufacture
05/13/2004WO2004040627A2 Electronic components
05/13/2004WO2004040622A2 Nickel silicide with reduced interface roughness
05/13/2004WO2004040619A2 Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer
05/13/2004WO2004040616A2 Field effect transistor and method for production thereof
05/13/2004WO2004034475A8 Plasma oscillation switching device
05/13/2004WO2004019609A3 A cmos aps with stacked avalanche multiplication layer and low voltage readout electronics
05/13/2004WO2004017381A3 Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
05/13/2004WO2004012246A3 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
05/13/2004WO2004012243A3 Selective placement of dislocation arrays
05/13/2004WO2003102962A3 Method and apparatus for erasing flash memory
05/13/2004WO2003100844B1 Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device
05/13/2004WO2003075362A3 A semiconductor photodetector
05/13/2004WO2003058701A3 Uv-enhanced oxy-nitridation of semiconductor substrates
05/13/2004WO2003031679B1 Method for depositing metal layers employing sequential deposition techniques
05/13/2004WO2002091468A9 Method for thin film lift-off processes using lateral extended etching masks and device
05/13/2004WO2002082510A8 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
05/13/2004US20040093575 Chemically synthesized and assembled electronic devices
05/13/2004US20040092133 Methods of fabricating oxide layers by plasma nitridation and oxidation
05/13/2004US20040092125 Method for forming quantum dots using metal thin film or metal powder
05/13/2004US20040092123 Method of manufacturing semiconductor device having silicide layer
05/13/2004US20040092109 Semiconductor device and method for making the device having an electrically modulated conduction channel
05/13/2004US20040092089 Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography
05/13/2004US20040092085 Semiconductor crystal film and method for preparation thereof
05/13/2004US20040092077 Method to improve flash forward tunneling voltage (FTV) performance
05/13/2004US20040092076 Semiconductor device and fabrication method thereof