Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2013
01/31/2013US20130025790 Plasma processing apparatus and plasma processing method
01/31/2013US20130025789 Dry-etching method
01/31/2013US20130025787 Baffle and substrate treating apparatuses including the same
01/31/2013US20130025786 Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes
01/31/2013US20130025785 Profile and cd uniformity control by plasma oxidation treatment
01/31/2013US20130025670 Semiconductor substrate and method for producing the same, photovoltaic cell element, and photovoltaic cell
01/31/2013US20130025539 Device for doping, deposition or oxidation of semiconductor material at low pressure
01/31/2013DE19943064B4 Verfahren zur epitaktischen Abscheidung von Atomen oder Molekülen aus einem Reaktivgas auf einer Abscheidungsoberfläche eines Substrats Process for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate
01/31/2013DE112011101395T5 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
01/31/2013DE112011100610T5 Chemische Dampfphasenabscheidung bei atmosphärischem Druck mit Sättigungssteuerung Chemical vapor deposition at atmospheric pressure with saturation control
01/31/2013DE112011100598T5 Polierkopf und Poliervorrichtung Polishing head and polishing machine
01/31/2013DE112010005467T5 Poliermittel und Polierverfahren damit Polishing agent and polishing method thereby
01/31/2013DE112010002755T5 Vorrichtung zur Montage elektronischer Komponenten und Verfahren zur Montage elektronischer Komponenten Device for mounting electronic components and methods for mounting electronic components
01/31/2013DE112010000741T5 Höherwertige Silanzusammensetzung und Verfahren zur Herstellung eines filmbeschichteten Substrats High-order silane composition and process for producing a film-coated substrate
01/31/2013DE112006004098B4 Halbleiter-Baugruppe mit einer Lead-Frame-Anordnung mit mindestens zwei Halbleiterchips und Verfahren zu deren Herstellung Semiconductor package with a lead frame assembly having at least two semiconductor chips and processes for their preparation
01/31/2013DE10346608B4 Herstellverfahren für ein Halbleiterbauteil Manufacturing method of a semiconductor device
01/31/2013DE102012212447A1 Photovoltaikeinheit mit mehreren Grenzschichten und Verfahren zu dessen Herstellung Photovoltaic unit with a plurality of boundary layers and methods for its preparation
01/31/2013DE102012106663A1 Verfahren zum Herstellen einer lichtemittierenden Halbleitervorrichtung A method of manufacturing a semiconductor light-emitting device
01/31/2013DE102012106662A1 Mehrschichtenmetallisierung mit beanspruchungsreduzierender Zwischenschicht Mehrschichtenmetallisierung with load-reducing intermediate layer
01/31/2013DE102012106566A1 Leistungshalbleiterchip mit zwei Metallschichten auf einer Fläche Power semiconductor chip with two metal layers on a surface
01/31/2013DE102012106473A1 Struktur und Verfahren für das Kontakthügel-Anlagespur-Verhältnis Structure and procedures for the bump-track system for money
01/31/2013DE102012106266A1 Stromversorgungsgehäusemodul und Verfahren zur Herstellung eines Stromversorgungsgehäusemoduls Power supply module and housing method for manufacturing a power supply module housing
01/31/2013DE102012103784A1 Chipgehäusemodul für einen Chip und Verfahren zum Bilden eines Chipgehäusemoduls Chip module housing for a chip and method of forming a chip package module
01/31/2013DE102011108822A1 Method for characterization of electro-optic component for electric circuit, involves holding component by generation and extraction of carriers, and determining mobility, density and service life of carriers in optical excited material
01/31/2013DE102011108651A1 Hochvolttransistorbauelement und Herstellungsverfahren High-voltage transistor device and manufacturing method
01/31/2013DE102011108334A1 Electronic device has bipolar transistor whose base is provided with high concentration dopant regions disconnected by region having dopant with lower concentration
01/31/2013DE102011080438B3 Herstellverfahren für einen N-Kanaltransistor mit einer Metallgateelektrodenstruktur mit großem ε und einem reduzierten Reihenwiderstand durch epitaktisch hergestelltes Halbleitermaterial in den Drain- und Sourcebereichen und N-Kanaltransistor Manufacturing process for an N-channel transistor with a metal gate electrode structure with large ε and a reduced series resistance by epitaxially produced semiconductor material in the drain and source regions and N-channel transistor
01/31/2013DE102011080023A1 Semiconductor component i.e. modern integrated circuit, manufacturing method for e.g. CPU, involves forming embedded deformation-inducing semiconductor material in active region under application of cleaning process
01/31/2013DE102011079919A1 Method for manufacture of complementary transistors, involves forming gate electrode structure of n-channel and p-channel transistors with specific critical dimensions on another substrate
01/31/2013DE102011079836A1 Method for manufacturing e.g. application-specific integrated circuit for P-channel complementary metal oxide semiconductor transistor, involves forming electrode structures with electrode materials and insulation layers
01/31/2013DE102011079835A1 Method of assembling semiconductor chip and package substrate, involves cooling composite component at different time-averaged rate of cooling so that mechanical stress in contact structure of semiconductor chip is reduced
01/31/2013DE102011079833A1 Method for manufacturing integrated circuit for e.g. P-channel complementary MOS transistor, involves producing recess in active region by etching process, and forming semiconductor alloy by performing epitaxial growth process
01/31/2013DE102009006800B4 Verfahren zur Herstellung von Transistoren und entsprechendes Halbleiterbauelement A process for the fabrication of transistors and corresponding semiconductor component
01/31/2013DE102008059649B4 Geringere topographieabhängige Unregelmäßigkeiten während der Strukturierung zweier unterschiedlicher verspannungsinduzierender Schichten in der Kontaktebene eines Halbleiterbauelements Lower topography dependent irregularities during the patterning of layers of two different verspannungsinduzierender in the contact plane of a semiconductor device
01/31/2013DE102008035805B4 Herstellung von Gatedielektrika in PMOS- und NMOS-Transistoren Preparation of gate dielectrics in PMOS and NMOS transistors
01/31/2013DE102008001535B4 Bipolartransistor und Verfahren zur Herstellung desselben Bipolar transistor and method of manufacturing the same
01/31/2013DE102004022455B4 Bipolartransistor mit isolierter Steuerelektrode Bipolar transistor with insulated gate electrode
01/31/2013DE10000364B4 Merkmalbasierende Feststellung von Fehlern Feature-based detection of faults
01/30/2013EP2551913A1 Heat-type sensor and platform
01/30/2013EP2551912A2 A silicon-carbide mosfet cell structure and method for forming same
01/30/2013EP2551910A1 Insulated gate semiconductor device with optimized breakdown voltage and manufacturing method thereof
01/30/2013EP2551900A1 Semiconductor device
01/30/2013EP2551899A1 Improved method for making a trench isolation in a semiconductor-on-insulator substrate
01/30/2013EP2551898A1 Method for curing defects in a semiconductor layer
01/30/2013EP2551897A1 Method for transferring a monocrystalline semiconductor layer onto a support substrate
01/30/2013EP2551896A1 Semiconductor substrate comprising doped regions forming a p-n junction
01/30/2013EP2551895A1 Method of manufacturing an electronic device having a plastic substrate
01/30/2013EP2551894A1 Region temperature-controlled structure
01/30/2013EP2551893A1 Irregular-surface forming method using plasma-etching process, and electrode member
01/30/2013EP2551892A1 METHOD FOR PRODUCING GaN FILM
01/30/2013EP2551891A1 Semiconductor device and method for producing same
01/30/2013EP2551322A1 Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
01/30/2013EP2550675A1 Method for providing a metal electrode on the surface of a hydrophobic material
01/30/2013EP2550674A1 Three dimensional inductor and transformer design methodology of glass technology
01/30/2013EP2550562A1 Pattern forming method and resist composition
01/30/2013EP2550317A1 Method for preparing an elastomeric composite material
01/30/2013CN202712246U Adjustable universal material box
01/30/2013CN202712245U Work platform mechanism of full-automatic die bonder
01/30/2013CN202712244U Piece holding basket used for placing poor pieces in screen printing
01/30/2013CN202712241U Transition transmission belt of solar cells
01/30/2013CN202712237U Blowing nozzle apparatus
01/30/2013CN202712236U Quartz boat for diffusion
01/30/2013CN202712154U Maintenance device for circuit defect of array substrate
01/30/2013CN202712153U Rapid axial locating and clamping device of full-automatic IC (Integrated Circuit) winded tape detection machine
01/30/2013CN202712152U Push rod type wafer clamping device which is retractable through air cylinder
01/30/2013CN202712151U Clamping device capable of reducing deformation of horizontally arranged glass substrate
01/30/2013CN202712150U Rotary sheet type disk-like component clamping device
01/30/2013CN202712149U Substrate adsorption apparatus
01/30/2013CN202712148U Wafer gaily decorated basket clamp
01/30/2013CN202712147U 90-degree to 45-degree converting device for automatically arranging component L-shaped terminals
01/30/2013CN202712146U XY double-coordinate air floatation positioning platform
01/30/2013CN202712145U Fixed-length conveying device for lead frame of integrated chip
01/30/2013CN202712144U Substrate conveying apparatus and developing machine
01/30/2013CN202712143U Two-way conveyor for production line of solar cell panel
01/30/2013CN202712142U Gas conveyer
01/30/2013CN202712141U Silicon slice blanking box
01/30/2013CN202712140U Novel anti-drop boat support
01/30/2013CN202712139U 晶片盒气体填充装置 Wafer cassette gas filling apparatus
01/30/2013CN202712138U Wafer ring carrier
01/30/2013CN202712137U Lead frame preheating device of plastic packaging die in chip packaging
01/30/2013CN202712136U High-temperature etching technology tank
01/30/2013CN202712135U Microwave slice-cracking equipment
01/30/2013CN202712134U 45-Degree self-aligning switching jig for component chip and frame sintering
01/30/2013CN202712133U Hollow loader for solving sintering evenness of component chip
01/30/2013CN202712132U Real-time adjustment thimble mechanism and system thereof
01/30/2013CN202712131U Etching terminal detecting device
01/30/2013CN202712130U Open-short (OS) circuit testing apparatus
01/30/2013CN202712129U Compound solar cell mobile electroluminescent shooting mechanism
01/30/2013CN202712128U Surface defect detection equipment of solar cell panel packaging material
01/30/2013CN202712127U Elastic positioning and magnetic fixing device for component edge encapsulation
01/30/2013CN202712126U Bending tooling of diode pin
01/30/2013CN202705452U Physical vapor deposition equipment
01/30/2013CN202702002U 研磨垫及研磨装置 Polishing pad and polishing apparatus
01/30/2013CN202701037U Integrated chip lead frame leveling device
01/30/2013CN1819299B Thin film transistors, flat panel display including the thin film transistor and method for manufacturing the thin film transistor and the flat panel display
01/30/2013CN1773708B 输出级结构 The output stage structure
01/30/2013CN102907181A Component temperature control by coolant flow control and heater duty cycle control
01/30/2013CN102906882A Semiconductor device and method of manufacturing the same
01/30/2013CN102906881A 半导体装置 Semiconductor device
01/30/2013CN102906880A Delta monolayer dopants epitaxy for embedded source/drain silicide