Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/1997
08/12/1997US5656811 Method for making specimen and apparatus thereof
08/12/1997US5656798 Terminal-carrying circuit board
08/12/1997US5656557 Process for producing various gases for semiconductor production factories
08/12/1997US5656556 Method for fabricating planarized borophosphosilicate glass films having low anneal temperatures
08/12/1997US5656555 Modified hydrogen silsesquioxane spin-on glass
08/12/1997US5656554 Semiconductor chip reclamation technique involving multiple planarization processes
08/12/1997US5656553 Method for forming a monolithic electronic module by dicing wafer stacks
08/12/1997US5656552 Method of making a thin conformal high-yielding multi-chip module
08/12/1997US5656550 Method of producing a semicondutor device having a lead portion with outer connecting terminal
08/12/1997US5656549 Method of packaging a semiconductor device
08/12/1997US5656548 Method for forming three dimensional processor using transferred thin film circuits
08/12/1997US5656547 Method for making a leadless surface mounted device with wrap-around flange interface contacts
08/12/1997US5656546 Self-aligned tin formation by N2+ implantation during two-step annealing Ti-salicidation
08/12/1997US5656545 Elimination of tungsten dimple for stacked contact or via application
08/12/1997US5656544 Process for forming a polysilicon electrode in a trench
08/12/1997US5656543 Whereby even if via is misaligned with line, portion of via not enclosed by metal is enclosed by etch stop spacer, and via is always capped by metal
08/12/1997US5656542 Covering substrate with dielectric film having groove, then forming layers of three different metals on film surface and removing them except in groove, annealing and alloying while controlling resistance
08/12/1997US5656541 Low temperature P2 O5 oxide diffusion source
08/12/1997US5656540 Forming step on semiconductor substrate, carrying out crystal growth using metal compound having alkylamino group and organometallic compound
08/12/1997US5656538 Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices
08/12/1997US5656537 Preventing parasitic transistor from being formed in lateral end of semiconductor on insulator structure
08/12/1997US5656536 Method of manufacturing a crown shaped capacitor with horizontal fins for high density DRAMs
08/12/1997US5656535 Storage node process for deep trench-based DRAM
08/12/1997US5656533 Preventing formation of projections during oxidation to eliminate areas where residual deposits of polycrystalline silicon could remain
08/12/1997US5656532 Method for fabricating a coaxial capacitor of a semiconductor device
08/12/1997US5656531 Method to form hemi-spherical grain (HSG) silicon from amorphous silicon
08/12/1997US5656529 Method for manufacturing highly-integrated capacitor
08/12/1997US5656527 Method for fabricating a non-volatile semiconductor memory device having storage cell array and peripheral circuit, and a structure therefore
08/12/1997US5656526 Method of fabricating a display device
08/12/1997US5656524 Selective deposition and etching yield emitter dielectric stack having reduced parasitic capacitance
08/12/1997US5656523 Flowing photoresist to cover edges of conductive layer and act as barrier or spacer for doping
08/12/1997US5656522 Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements
08/12/1997US5656520 Forming gate insulating film, electrode, stopper film on semiconductor substrate, forming insulating interlayer, etching to remove, lightly doping substrate, forming sidewall spacers, heavily doping substrate, forming electrode wiring
08/12/1997US5656519 Method for manufacturing salicide semiconductor device
08/12/1997US5656518 Method for fabrication of a non-symmetrical transistor
08/12/1997US5656516 Method for forming silicon oxide layer
08/12/1997US5656515 Method of making high-speed double-heterostructure bipolar transistor devices
08/12/1997US5656514 Controlling doping concentrations to control band gaps
08/12/1997US5656513 Nonvolatile memory cell formed using self aligned source implant
08/12/1997US5656512 Method of manufacturing a semiconductor accelerometer
08/12/1997US5656511 Manufacturing method for semiconductor device
08/12/1997US5656510 Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
08/12/1997US5656414 Methods of forming tall, high-aspect ratio vias and trenches in photo-imageable materials, photoresist materials, and the like
08/12/1997US5656412 Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
08/12/1997US5656402 Method for alignment of manufacturing semiconductor apparatus
08/12/1997US5656400 Photomask and pattern forming method employing the same
08/12/1997US5656399 Process for making an x-ray mask
08/12/1997US5656382 Oriented conductive film and process for preparing the same
08/12/1997US5656342 Free of dust particles
08/12/1997US5656339 Method of and arrangement for applying a fluid to a surface using a vibrating needle
08/12/1997US5656337 Method of forming a dielectric layer
08/12/1997US5656330 Hydrogenated amorphous silicon film
08/12/1997US5656329 Surface-mediated reaction between two precursors releases a volatile ester and deposits an intermediate compound film; annealing; crystallization; perovskite-phase film
08/12/1997US5656182 Process for fabricating a device in which the process is controlled by near-field imaging latent features introduced into energy sensitive resist materials
08/12/1997US5656147 Using anodizing interconnection of lines which connect joint points to input points of pattern so formation voltages at respective input points are equal to each other
08/12/1997US5656139 Electroplating apparatus
08/12/1997US5656128 Reduction of reflection by amorphous carbon
08/12/1997US5656123 Dual-frequency capacitively-coupled plasma reactor for materials processing
08/12/1997US5656122 Shadow clamp
08/12/1997US5656113 Slurrying aluminum nitride, sintering aid and dielectric increasing compound, molding sheets, degreasing and sintering them
08/12/1997US5656110 Process and apparatus for producing a laminated strip of a metal foil and a plastic film
08/12/1997US5656097 Cleaning solution containing ammonium hydroxide, hydrogen peroxide and water
08/12/1997US5656093 Wafer spacing mask for a substrate support chuck and method of fabricating same
08/12/1997US5656092 Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
08/12/1997US5656088 Apparatus for dipping substrates in processing fluid
08/12/1997US5656082 Liquid applying apparatus utilizing centrifugal force
08/12/1997US5656076 Method for growing III-V group compound semiconductor crystal
08/12/1997US5655954 Polishing apparatus
08/12/1997US5655871 Device for transferring plate-like objects
08/12/1997US5655869 Device for coupling loading and unloading devices with semiconductor processing machines
08/12/1997US5655703 Solder hierarchy for chip attachment to substrates
08/12/1997US5655700 Ultrasonic flip chip bonding process and apparatus
08/12/1997US5655290 Method for making a three-dimensional multichip module
08/12/1997CA2069038C Method for preparing semiconductor member
08/12/1997CA2064146C Schottky barrier diode and a method of manufacturing thereof
08/07/1997WO1997028673A1 Polymer based circuit and method of making same
08/07/1997WO1997028669A1 Model-based predictive control of thermal processing
08/07/1997WO1997028668A1 Thin film fabrication technique for implantable electrodes
08/07/1997WO1997028564A1 Facet etch for improved step coverage of integrated circuit contacts
08/07/1997WO1997028563A1 Manufacturing process for borderless vias
08/07/1997WO1997028562A1 Contact bump structure and method for fabricating contact bumps
08/07/1997WO1997028561A1 Reducing fixed charge in semiconductor device layers
08/07/1997WO1997028560A1 Method for forming ultra-thin gate oxides
08/07/1997WO1997028555A1 Electromagnetic high-frequency or microwave apparatus
08/07/1997WO1997028420A1 Lead inspection apparatus of ic package
08/07/1997WO1997027977A1 Robot for handling
08/07/1997WO1997023808A3 A mixed solvent system for positive photoresists
08/07/1997DE19707180A1 Oxidising and doping silicon surfaces
08/07/1997DE19703620A1 Single crystal pulling apparatus
08/07/1997DE19653219A1 High voltage semiconductor integrated circuit, e.g. IGBT and CMOS logic with SOI substrate
08/07/1997DE19640225A1 Semiconductor module with housing for integrated circuit
08/07/1997DE19633914C1 Thin film transistor device
08/07/1997DE19630913A1 Burn-in sensor circuit for semiconductor memory
08/07/1997DE19630609A1 Production of transistor
08/07/1997DE19604260A1 Festwert-Speicherzellenvorrichtung und Verfahren zu deren Herstellung Read-only memory cell apparatus and method for producing them
08/07/1997DE19604242A1 Herstellung von schrägen Galvanikstrukturen Production of oblique galvanic structures
08/07/1997DE19604043A1 Vertical MOS field effect transistor device
08/07/1997CA2244956A1 Electromagnetic high-frequency or microwave apparatus
08/06/1997EP0788228A2 Semiconductor integrated circuit chip
08/06/1997EP0788170A2 Source-follower amplifier employing a fully depleted well structure