Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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01/06/2015 | US8928113 Layout scheme and method for forming device cells in semiconductor devices |
01/06/2015 | US8928111 Transistor with high breakdown voltage having separated drain extensions |
01/06/2015 | US8928110 Dummy cell pattern for improving device thermal uniformity |
01/06/2015 | US8928103 Solid-state imaging element, method of manufacturing the same, solid-state imaging apparatus, and imaging apparatus |
01/06/2015 | US8928100 Spin transfer torque cell for magnetic random access memory |
01/06/2015 | US8928096 Buried-channel field-effect transistors |
01/06/2015 | US8928095 Semiconductor device having reduced leakage current at breakdown and method of fabricating thereof |
01/06/2015 | US8928094 Strained asymmetric source/drain |
01/06/2015 | US8928092 Semiconductor devices and methods of fabricating the same |
01/06/2015 | US8928091 Field-effect-transistor with self-aligned diffusion contact |
01/06/2015 | US8928089 Semiconductor structure and method for forming the same |
01/06/2015 | US8928088 Integrated circuits having dummy gate electrodes and methods of forming the same |
01/06/2015 | US8928081 Semiconductor device having display device |
01/06/2015 | US8928079 MOS device with low injection diode |
01/06/2015 | US8928073 Semiconductor devices including guard ring structures |
01/06/2015 | US8928071 Semiconductor device including a MOSFET and Schottky junction |
01/06/2015 | US8928068 Vertical semiconductor device with thinned substrate |
01/06/2015 | US8928063 Non-volatile memory device and method for fabricating the same |
01/06/2015 | US8928062 Nonvolatile semiconductor memory device and manufacturing method thereof |
01/06/2015 | US8928057 Uniform finFET gate height |
01/06/2015 | US8928051 Metal oxide semiconductor (MOS) device with locally thickened gate oxide |
01/06/2015 | US8928049 High efficiency module |
01/06/2015 | US8928048 Methods of forming semiconductor device with self-aligned contact elements and the resulting device |
01/06/2015 | US8928047 MOSFET with source side only stress |
01/06/2015 | US8928039 Semiconductor device including heterojunction field effect transistor and Schottky barrier diode |
01/06/2015 | US8928037 Heterostructure power transistor with AlSiN passivation layer |
01/06/2015 | US8928036 High operating temperature barrier infrared detector with tailorable cutoff wavelength |
01/06/2015 | US8928035 Gallium nitride devices with gallium nitride alloy intermediate layer |
01/06/2015 | US8928034 Gallium nitride devices with aluminum nitride alloy intermediate layer |
01/06/2015 | US8928033 Semiconductor device |
01/06/2015 | US8928032 Fully isolated LIGBT and methods for forming the same |
01/06/2015 | US8928030 Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device |
01/06/2015 | US8928018 Light-emitting device and manufacturing method thereof, lighting device, and display device |
01/06/2015 | US8928006 Substrate structure, method of forming the substrate structure and chip comprising the substrate structure |
01/06/2015 | US8928004 Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same |
01/06/2015 | US8928002 Semiconductor device and method of manufacturing semiconductor device |
01/06/2015 | US8928000 Nitride semiconductor wafer including different lattice constants |
01/06/2015 | US8927999 Edge termination by ion implantation in GaN |
01/06/2015 | US8927994 Display device |
01/06/2015 | US8927990 Semiconductor device and manufacturing method thereof |
01/06/2015 | US8927989 Voltage contrast inspection of deep trench isolation |
01/06/2015 | US8927987 Semiconductor device including external connection pads and test pads |
01/06/2015 | US8927983 Thin film transistor substrate and method fabricating the same |
01/06/2015 | US8927978 Organic EL element |
01/06/2015 | US8927969 Doped graphene electronic materials |
01/06/2015 | US8927966 Dynamic random access memory unit and method for fabricating the same |
01/06/2015 | US8927907 Thermally zoned substrate holder assembly |
01/06/2015 | US8927873 Fin-integrated substrate and manufacturing method of fin-integrated substrate |
01/06/2015 | US8927857 Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices |
01/06/2015 | US8927748 Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films |
01/06/2015 | US8927681 Coating composition for use with an overcoated photoresist |
01/06/2015 | US8927442 SiCOH hardmask with graded transition layers |
01/06/2015 | US8927441 Methods of forming rutile titanium dioxide |
01/06/2015 | US8927440 Film deposition apparatus and method of depositing film |
01/06/2015 | US8927439 Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent |
01/06/2015 | US8927438 Methods for manufacturing high dielectric constant films |
01/06/2015 | US8927437 Antireflection structures with an exceptional low refractive index and devices containing the same |
01/06/2015 | US8927436 Thin film transistor and method of manufacturing trench, metal wire, and thin film transistor array panel |
01/06/2015 | US8927435 Load lock having secondary isolation chamber |
01/06/2015 | US8927434 Patterned thin film dielectric stack formation |
01/06/2015 | US8927433 Conductive via hole and method for forming conductive via hole |
01/06/2015 | US8927432 Continuously scalable width and height semiconductor fins |
01/06/2015 | US8927431 High-rate chemical vapor etch of silicon substrates |
01/06/2015 | US8927430 Overburden removal for pore fill integration approach |
01/06/2015 | US8927429 Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid |
01/06/2015 | US8927428 Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate |
01/06/2015 | US8927427 Anticipatory implant for TSV |
01/06/2015 | US8927426 Semiconductor devices having through-vias and methods for fabricating the same |
01/06/2015 | US8927425 Self-aligned patterning technique for semiconductor device features |
01/06/2015 | US8927424 Self-aligned patterning technique for semiconductor device features |
01/06/2015 | US8927423 Methods for annealing a contact metal layer to form a metal silicidation layer |
01/06/2015 | US8927422 Raised silicide contact |
01/06/2015 | US8927421 Interconnect structures and methods of manufacturing of interconnect structures |
01/06/2015 | US8927420 Mechanism of forming semiconductor device having support structure |
01/06/2015 | US8927419 Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive |
01/06/2015 | US8927418 Systems and methods for reducing contact resistivity of semiconductor devices |
01/06/2015 | US8927417 Semiconductor package signal routing using conductive vias |
01/06/2015 | US8927416 Semiconductor device and method of manufacturing the same |
01/06/2015 | US8927415 Graphene barrier layers for interconnects and methods for forming the same |
01/06/2015 | US8927414 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device |
01/06/2015 | US8927413 Semiconductor structure and semiconductor fabricating process for the same |
01/06/2015 | US8927412 Multi-chip package and method of formation |
01/06/2015 | US8927411 System and method for forming an aluminum fuse for compatibility with copper BEOL interconnect scheme |
01/06/2015 | US8927410 Methods of forming through substrate interconnects |
01/06/2015 | US8927409 High-k transistors with low threshold voltage |
01/06/2015 | US8927408 Self-aligned contact employing a dielectric metal oxide spacer |
01/06/2015 | US8927407 Method of forming self-aligned contacts for a semiconductor device |
01/06/2015 | US8927406 Dual damascene metal gate |
01/06/2015 | US8927405 Accurate control of distance between suspended semiconductor nanowires and substrate surface |
01/06/2015 | US8927404 Insulating film and semiconductor device including the same |
01/06/2015 | US8927403 Selective deposition of noble metal thin films |
01/06/2015 | US8927402 Method for forming termination structure for gallium nitride Schottky diode |
01/06/2015 | US8927401 Trench Schottky diode and method for manufacturing the same |
01/06/2015 | US8927400 Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers |
01/06/2015 | US8927399 Localized implant into active region for enhanced stress |
01/06/2015 | US8927398 Group III nitrides on nanopatterned substrates |
01/06/2015 | US8927397 Diode structure and method for gate all around silicon nanowire technologies |
01/06/2015 | US8927396 Production process of epitaxial silicon carbide single crystal substrate |
01/06/2015 | US8927395 Wafer processing method |
01/06/2015 | US8927394 Manufacturing method of an active device substrate |