Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2013
12/19/2013US20130334603 Isolation structure for semiconductor devices
12/19/2013US20130334602 Continuously scalable width and height semiconductor fins
12/19/2013US20130334600 Transistor device and manufacturing method thereof
12/19/2013US20130334599 Integrated snubber in a single poly mosfet
12/19/2013US20130334595 Structure and method for a field effect transistor
12/19/2013US20130334594 Recessed gate memory apparatuses and methods
12/19/2013US20130334590 Semiconductor device and method for manufacturing same
12/19/2013US20130334588 Field effect transistor and manufacturing method thereof
12/19/2013US20130334585 Semiconductor device, memory system including the same, and method of manufacturing the same
12/19/2013US20130334584 Integration of memory, high voltage and logic devices
12/19/2013US20130334575 Damascene Word Line
12/19/2013US20130334573 Multi-Channel HEMT
12/19/2013US20130334571 Epitaxial growth of smooth and highly strained germanium
12/19/2013US20130334568 Multilayer substrate structure and method of manufacturing the same
12/19/2013US20130334565 Method of Manufacturing a Semiconductor Device Using an Impurity Source Containing a Metallic Recombination Element and Semiconductor Device
12/19/2013US20130334541 Three dimensional strained semiconductors
12/19/2013US20130334532 Stress gauge comprised of a piezoelectric material for use with integrated circuit products
12/19/2013US20130334531 Systems and methods for measuring temperature and current in integrated circuit devices
12/19/2013US20130334522 Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same
12/19/2013US20130334499 Method of isolating nanowires from a substrate
12/19/2013US20130334497 Nanowire epitaxy on a graphitic substrate
12/19/2013US20130334496 Semiconductor device, superlattice layer used in the same, and method for manufacturing semiconductor device
12/19/2013US20130334495 Superlattice structure, semiconductor device including the same, and method of manufacturing the semiconductor device
12/19/2013US20130334483 Methods of forming resistive memory elements and related resistive memory elements, resistive memory cells, and resistive memory devices
12/19/2013US20130334199 Thin heated substrate support
12/19/2013US20130334172 Substrate processing apparatus, substrate processing method, and computer readable storage medium storing substrate processing program
12/19/2013US20130334054 METHOD FOR ELECTROCHEMICALLY MANUFACTURING CuSCN NANOWIRES
12/19/2013US20130334036 Apparatus for fluid processing a workpiece
12/19/2013US20130333833 Perforated support plate
12/19/2013US20130333751 Coincident site lattice-matched growth of semiconductors on sustrates using compliant buffer layers
12/19/2013US20130333723 Method for processing flat articles
12/19/2013US20130333621 Apparatus for the deposition of high dielectric constant films
12/19/2013US20130333174 Transport system
12/19/2013US20130333128 Wafer manufacturing cleaning apparatus, process and method of use
12/19/2013DE112012001458T5 Halbleiterwafer und Herstellungsverfahren dafür Semiconductor wafer, and manufacturing method thereof
12/19/2013DE112012001395T5 Signalverarbeitungsschaltung Signal processing circuit
12/19/2013DE112012001158T5 Mosfet mit ausgesparter Kanaldünnschicht und abrupten Übergängen MOSFET with recessed channel thin film and abrupt transitions
12/19/2013DE102013211395A1 Laserbearbeitungsvorrichtung Laser processing apparatus
12/19/2013DE102013106271A1 Verfahren zur Herstellung einer Chipkapselung, Verfahren zur Herstellung einer Wafer-Level-Kapselung, Chipkapselung und Wafer-Level-Kapselung A process for preparing a Chipkapselung, method for producing a wafer level encapsulation, Chipkapselung and wafer-level encapsulation
12/19/2013DE102013106113A1 Halbleitermodule und Verfahren zu ihrer Herstellung Semiconductor modules and methods for their preparation
12/19/2013DE102013106055A1 Verfahren zum Herstellen einer Halbleitervorrichtung mit einem Kontakteinsatz und einem metallischen Rekombinationselement sowie Halbleitervorrichtung A method of manufacturing a semiconductor device having a contact insert and a metallic and semiconductor device Rekombinationselement
12/19/2013DE102013105732A1 Verfahren zum Bearbeiten einer Halbleiteranordnung A method for processing a semiconductor device
12/19/2013DE102013105707A1 Halbleitervorrichtung, Übergitterschicht, welche in derselben verwendet wird, und Verfahren zur Herstellung der Halbleitervorrichtung A semiconductor device superlattice layer which is used in the same, and methods for producing the semiconductor device
12/19/2013DE102013104744B3 Method for manufacturing semiconductor device, involves etching gate dielectric layer, barrier layer, and metal layer to respective level within trench to form opening or to trench for forming further layers
12/19/2013DE102013103470A1 Struktur und Verfahren für einen Feldeffekttransistor Structure and method of a field effect transistor
12/19/2013DE102013100146A1 Halbleiterstruktur und Verfahren Semiconductor structure and method
12/19/2013DE102012210306A1 Method for manufacturing substrate for e.g. MOSFET for rectifying and inverting electric voltage and current, involves applying metallization layer on insulating material, and electrodepositing metal layer on metallization layer
12/19/2013DE102012210158A1 Semiconductor module i.e. power semiconductor module, has base plate comprising thickened portion whose maximum thickness is greater than average thickness of base plate, and circuit carrier soldered with thickened portion by solder
12/19/2013DE102012210124A1 Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteils The composite component as well as method for producing a composite component
12/19/2013DE102012210052A1 Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung Hybrid integrated component and method for its production
12/19/2013DE102012210047A1 Verfahren zum Schneiden eines Einkristalls A method of cutting a single crystal
12/19/2013DE102012210033A1 Bauelement mit Durchkontaktierung und Verfahren zur Herstellung Component having through-hole plating and methods for preparing
12/19/2013DE102012209902A1 Method for treating silicon rods with e.g. water during manufacturing polycrystalline silicon ingots in process reactor, involves transporting semiconductor rods by endless chains, and treating semiconductor rods with liquid or gas
12/19/2013DE102012111574A1 Ätzschaden- und esl-freie dual-damaszene metallkontaktstruktur Ätzschaden- and esl-free dual-metal contact at that scene structure
12/19/2013DE102012105287A1 Verfahren zur Herstellung eines elektrischen Bauelements und Elektrisches Bauelement Process for the preparation of an electrical component and Electrical component
12/19/2013DE102012105218A1 Holding device for holding wafer for manufacturing MEMS microphones, has support device including upper side for supporting wafer, and liquid column changing curvature of upper side and exerting force on support device
12/19/2013DE102012105162A1 Integriertes Leistungshalbleiterbauelement, Herstellungsverfahren dafür und Chopperschaltung mit integriertem Halbleiterbauelement Integrated power semiconductor device, and manufacturing method thereof chopper circuit with an integrated semiconductor device
12/19/2013DE102012105110A1 Montageträger und Verfahren zur Montage eines Montageträgers auf einem Anschlussträger Mounting bracket and method for mounting a mounting bracket on a connection carrier
12/19/2013DE102012012088A1 Verfahren zum Herstellen von Halbleiterdünnschichten auf Fremdsubstraten A method for the manufacture of semiconductor thin films on foreign substrates
12/19/2013DE102008047159B4 Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device
12/19/2013DE102008046864B4 Halbleiterstruktur mit Kondensator und Herstellungsverfahren dafür Semiconductor structure with capacitor and manufacturing method therefor
12/19/2013DE102008030849B4 Verfahren zur Reduzierung der Leckströme in dielektrischen Materialien mit Metallgebieten und einer Metalldeckschicht in Halbleiterbauelementen A method for reducing the leakage currents in dielectric materials with metal regions and a metal coating layer in semiconductor devices
12/18/2013EP2674981A1 Active matrix substrate, display panel, and display device
12/18/2013EP2674970A2 Integrated circuit build-up package and method of manufacturing the same with adhesive die mounting to a dielectric layer
12/18/2013EP2674969A1 Substrate having etching mask and method for producing same
12/18/2013EP2674968A2 Semiconductor device manufacturing method and laser annealing apparatus
12/18/2013EP2674967A1 Laser annealing method and laser annealing apparatus
12/18/2013EP2674966A2 Silicon carbide switching devices including P-type channels and methods of forming the same
12/18/2013EP2674965A1 Laminated substrate and method of manufacturing thereof
12/18/2013EP2674964A1 Precursor solution for forming a semiconductor thin film on the basis of CIS, CIGS or CZTS
12/18/2013EP2674827A1 Guided transfer car system
12/18/2013EP2674769A1 Device and method for removing tested semiconductor elements
12/18/2013EP2674518A1 Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured thereby
12/18/2013EP2674239A1 Laser processing method
12/18/2013EP2673811A2 Light emitting device with dislocation bending structure
12/18/2013EP2673807A2 Magnetic element with improved out-of-plane anisotropy for spintronic applications
12/18/2013EP2673806A1 Semiconductor device and related fabrication methods
12/18/2013EP2673803A2 Power semiconductor module
12/18/2013EP2673800A1 High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis
12/18/2013EP2673799A1 Epitaxy of high tensile silicon alloy for tensile strain applications
12/18/2013EP2673798A1 Methodology for forming pnictide compositions suitable for use in microelectronic devices
12/18/2013EP2673797A2 Wide process range library for metrology
12/18/2013EP2135979B1 Method for manufacturing nitride single crystal
12/18/2013EP2113130B1 Multi-layer source/drain stressor
12/18/2013EP2006883B1 Device for doping, coating or oxidizing a semiconductor material under a low pressure
12/18/2013EP1778897B1 Structure comprising iii-nitride materials including low dislocation densities and method of its formation
12/18/2013EP1652219B1 Anchors for microelectromechanical systems having an soi substrate, and method of fabricating same
12/18/2013EP1566843B1 Manufacturing method of a silicon carbide semiconductor device
12/18/2013EP1563529B1 Silicon-containing layer deposition with silicon compounds
12/18/2013EP1465246B1 Method for producing electrical through hole interconnects
12/18/2013EP1402572B1 Method for producing miniature amplifier and signal processing unit
12/18/2013EP1296368B1 Semiconductor device including porous insulating material and manufacturing method thereof
12/18/2013EP1292968B1 Displacement device
12/18/2013EP1184895B1 Substrate processing apparatus and substrate inspection method
12/18/2013EP0888642B1 Semiconductor device
12/18/2013CN203351668U Organic layer deposition equipment and organic light-emitting display device
12/18/2013CN203351649U COB (Chip On Board) LED packaging structure
12/18/2013CN203351635U Silicon wafer pre-position device
12/18/2013CN203351597U Silicon controlled rectifier transient voltage inhibitor having embedded Zener diode structure
12/18/2013CN203351574U Array substrate and display device
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