Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2005
04/26/2005US6885050 Ferroelectric memory device and method of manufacturing the same
04/26/2005US6885049 Spin dependent tunneling junctions including ferromagnetic layers having flattened peaks
04/26/2005US6885048 Transistor-type ferroelectric nonvolatile memory element
04/26/2005US6885046 Semiconductor integrated circuit configured to supply sufficient internal current
04/26/2005US6885045 Layout structure of multiplexer cells
04/26/2005US6885044 Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates
04/26/2005US6885042 Hetero-junction bipolar transistor and a manufacturing method of the same
04/26/2005US6885041 Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
04/26/2005US6885039 Semiconductor photodetector and avalanche photodiode
04/26/2005US6885037 IC package with stacked sheet metal substrate
04/26/2005US6885032 Display assembly having flexible transistors on a flexible substrate
04/26/2005US6885031 Integrated circuit including single crystal semiconductor layer on non-crystalline layer
04/26/2005US6885030 Active matrix substrate, method of manufacturing the same, and display device
04/26/2005US6885014 Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
04/26/2005US6885009 Device for influencing an electron beam
04/26/2005US6884999 Use of scanning probe microscope for defect detection and repair
04/26/2005US6884989 Overhead-traveling carrying apparatus
04/26/2005US6884984 System and method for lithography process monitoring and control
04/26/2005US6884972 Ceramic plate for a semiconductor producing/inspecting apparatus
04/26/2005US6884902 Organometallic iridium compound, process of producing the same, and process of producing thin film
04/26/2005US6884742 Sintering alumnum nitride and boron carbide; controlling temperature; semiconductor; electroconductivity, corrosion resistance
04/26/2005US6884740 Photoelectrochemical undercut etching of semiconductor material
04/26/2005US6884739 Lanthanide doped TiOx dielectric films by plasma oxidation
04/26/2005US6884738 Manufacturing method of semiconductor device and substrate processing apparatus
04/26/2005US6884737 Method and apparatus for precursor delivery utilizing the melting point depression of solid deposition precursors in the presence of supercritical fluids
04/26/2005US6884736 Method of forming contact plug on silicide structure
04/26/2005US6884735 Materials and methods for sublithographic patterning of gate structures in integrated circuit devices
04/26/2005US6884734 Vapor phase etch trim structure with top etch blocking layer
04/26/2005US6884733 Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation
04/26/2005US6884732 Method of fabricating a device having a desired non-planar surface or profile and device produced thereby
04/26/2005US6884731 Method for forming magnetic tunneling junction layer for magnetic random access memory
04/26/2005US6884728 Method for removing polymeric residue contamination on semiconductor feature sidewalls
04/26/2005US6884727 Semiconductor fabrication process for modifying the profiles of patterned features
04/26/2005US6884726 Method for handling a thin silicon wafer
04/26/2005US6884725 Methods of forming materials within openings, and methods of forming isolation regions
04/26/2005US6884724 Method for dishing reduction and feature passivation in polishing processes
04/26/2005US6884723 Methods for planarization of group VIII metal-containing surfaces using complexing agents
04/26/2005US6884722 Method of fabricating a narrow polysilicon line
04/26/2005US6884721 Copper ions prevent contamination during storage to thereby prevent degradation of oxide dielectric breakdown voltage
04/26/2005US6884720 Forming copper interconnects with Sn coatings
04/26/2005US6884719 Substrate is subjected to one or more reaction cycles of an organometallic gas precursor and an oxidizing gas to the heated substrate such as semiconductor wafer
04/26/2005US6884718 Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby
04/26/2005US6884717 Stiffened backside fabrication for microwave radio frequency wafers
04/26/2005US6884716 Method of forming a crystalline phase material
04/26/2005US6884715 Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed thereby
04/26/2005US6884714 Method of forming shallow trench isolation with chamfered corners
04/26/2005US6884713 Method for forming metal line of semiconductor device
04/26/2005US6884712 Method of manufacturing semiconductor local interconnect and contact
04/26/2005US6884710 Semiconductor device having multi-layer copper line and method of forming same
04/26/2005US6884708 Method of partially plating substrate for electronic devices
04/26/2005US6884706 High permeability thin films and patterned thin films to reduce noise in high speed interconnections
04/26/2005US6884705 Semiconductor device having hetero grain stack gate and method of forming the same
04/26/2005US6884704 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
04/26/2005US6884703 Manufacturing of a low-noise mos device
04/26/2005US6884702 Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate
04/26/2005US6884701 Process for fabricating semiconductor device
04/26/2005US6884700 Method of manufacturing device, device, and electronic apparatus
04/26/2005US6884699 Process and unit for production of polycrystalline silicon film
04/26/2005US6884698 Method for manufacturing semiconductor device with crystallization of amorphous silicon
04/26/2005US6884697 Process for cleaving a wafer layer from a donor wafer
04/26/2005US6884696 Method for producing bonding wafer
04/26/2005US6884695 Sheet resin composition and process for manufacturing semiconductor device therewith
04/26/2005US6884694 Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same
04/26/2005US6884693 Silicon-on-insulator wafer and method of manufacturing the same
04/26/2005US6884692 Method for forming conductive material in opening and structures regarding same
04/26/2005US6884691 Method of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms
04/26/2005US6884690 Thin-film resistor with high temperature coefficient for use as passive semiconductor component for integrated circuits, and method for producing the same
04/26/2005US6884689 Fabrication of self-aligned bipolar transistor
04/26/2005US6884688 Method for producing a MOS transistor and MOS transistor
04/26/2005US6884687 Semiconductor processing methods of forming integrated circuitry, forming conductive lines, forming a conductive grid, forming a conductive network, forming an electrical interconnection to a node location, forming an electrical interconnection with a transistor source/drain region, and integrated circuitry
04/26/2005US6884686 Method of manufacturing and structure of semiconductor device with floating ring structure
04/26/2005US6884685 Radical oxidation and/or nitridation during metal oxide layer deposition process
04/26/2005US6884684 High density trench power MOSFET structure and fabrication method thereof
04/26/2005US6884683 Trench DMOS transistor having a zener diode for protection from electro-static discharge
04/26/2005US6884682 Method for manufacturing flash memory device
04/26/2005US6884681 Method of manufacturing a semiconductor memory with deuterated materials
04/26/2005US6884680 Method for manufacturing non-volatile memory devices
04/26/2005US6884679 Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cell
04/26/2005US6884678 Method for forming capacitor of semiconductor device
04/26/2005US6884677 Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same
04/26/2005US6884676 Vertical 8F2 cell dram with active area self-aligned to bit line
04/26/2005US6884675 Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same
04/26/2005US6884674 Method for fabricating a semiconductor device including a capacitance insulating film having a perovskite structure
04/26/2005US6884673 Methods of forming integrated circuit devices having metal-insulator-metal (MIM) capacitor
04/26/2005US6884672 Method for forming an electronic device
04/26/2005US6884671 Method for fabricating a gate electrode
04/26/2005US6884670 Dry etching with reduced damage to MOS device
04/26/2005US6884669 Hatted polysilicon gate structure for improving salicide performance and method of forming the same
04/26/2005US6884668 Semiconductor device and manufacturing method therefor
04/26/2005US6884667 Field effect transistor with stressed channel and method for making same
04/26/2005US6884666 Thin film transistor, liquid crystal display substrate, and their manufacture methods
04/26/2005US6884665 Method for manufacturing thin film transistor
04/26/2005US6884664 Semiconductor device and method of manufacturing the same
04/26/2005US6884663 Method for reconstructing an integrated circuit package using lapping
04/26/2005US6884662 Enhanced adhesion strength between mold resin and polyimide
04/26/2005US6884661 Method of fabricating posts over integrated heat sink metallization to enable flip chip packaging of GaAs devices
04/26/2005US6884659 Thin interface layer to improve copper etch stop
04/26/2005US6884656 Semiconductor device having a flip-chip construction
04/26/2005US6884655 Semiconductor package, method of manufacturing the same, and semiconductor device
04/26/2005US6884652 Semiconductor package free of substrate and fabrication method thereof