Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2005
05/25/2005EP1532072A1 Utilisation of waste gas streams
05/25/2005EP1532071A2 Layer system comprising a silicon layer and a passivation layer, method for producing a passivation layer on a silicon layer and the use of said system and method
05/25/2005EP1504468A4 Microelectronic assembly with die support and method
05/25/2005EP1368833B1 Integrated circuit comprising electric connecting elements
05/25/2005EP1303575B1 Liquid crystal polymers for flexible circuits
05/25/2005EP1227912B1 Methods and apparatuses for planarizing microelectronic substrate assemblies
05/25/2005EP1147536B1 Method for precise molding and alignment of structures on a substrate using a stretchable mold
05/25/2005EP1102467B1 Solid-state imaging device, method for driving the same, and image input device
05/25/2005EP1038186B1 Test socket
05/25/2005EP0972092B1 Multipurpose processing chamber for chemical vapor deposition processes
05/25/2005EP0675502B1 Multiple sector erase flash EEPROM system
05/25/2005DE202005001721U1 Vertical quartz glass storage rack for semiconductor disc-shaped substrates, has locking elements provided on lower end plate
05/25/2005DE19816739B4 Vorrichtung zum Beladen und Entladen eines Prozeßreaktors mit Gegenständen, vorzugsweise Wafern Device for loading and unloading a reactor process with articles, preferably wafers
05/25/2005DE19603288B4 Halbleitervorrichtung Semiconductor device
05/25/2005DE19519499B4 Thermoplastische Klebstoffolie und deren Verwendung Thermoplastic adhesive and their use
05/25/2005DE10350038A1 Verfahren zum anodischen Bonden von Wafern und Vorrichtung A method of anodic bonding of wafers and device
05/25/2005DE10350036A1 Verfahren zum Vereinzeln von Halbleiterchips und entsprechende Halbleiterchipanordnung A method for separating semiconductor chips and semiconductor chip assembly corresponding
05/25/2005DE10349847B3 Positionierungsvorrichtung und -Verfahren für die Übertragung elektronischer Bauteile Positioning device and method for transmitting electronic components
05/25/2005DE10348641A1 Verfahren zur Verringerung parasitärer Kopplungen in Schaltkreisen A method for reducing parasitic couplings in circuits
05/25/2005DE10348021A1 Verfahren zur Herstellung einer Halbleiterstruktur mit einer Einkapselung einer Füllung, welche zum Anfüllen von Gräben verwendet wird A method of fabricating a semiconductor structure having an encapsulation of a fill, which is used for priming of trenches
05/25/2005DE10348007A1 Verfahren zum Strukturieren und Feldeffekttransistoren A method for patterning and field effect transistors
05/25/2005DE10348006A1 Feldeffekttransistor, insbesondere vertikaler Feldeffekttransistor, Speicherzelle und Herstellungsverfahren Field effect transistor, in particular a vertical field effect transistor memory cell, and manufacturing method
05/25/2005DE10347731A1 Producing semiconductor structure for integrated circuits or micromechanical elements comprises forming openings in two mask layers by etching, transferring wider second opening into layer to be etched
05/25/2005DE10347622A1 Substrate for making solder connection to second substrate or chip has solder pad with solderable adhesive surfaces in addition to electrical contact surface
05/25/2005DE10347543A1 Device for removing electronic components from adhesive carrier has plate-shaped light conducting/emitting element for visual recognition of components with through opening(s) for removal tool movable on carrier side remote from component
05/25/2005DE10347119A1 Coating assembly for electronic wafer component has baffle plate deflecting aerosol particles to magnesium oxide wafer surface
05/25/2005DE10341806A1 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Schicht und integriertes Halbleiterbauelement mit einer epitaktischen mit Arsen in-situ dotierten Silizium-Germanium Schicht A process for producing an epitaxial silicon-germanium layer and integrated semiconductor device with an epitaxial doped with arsenic in-situ silicon-germanium layer
05/25/2005DE10340714B3 Teststruktur für ein Single-sided Buried Strap-DRAM-Speicherzellenfeld Test structure for a single-sided buried strap DRAM memory cell array
05/25/2005DE10338503B3 Producing hard mask for semiconductor structure involves providing structured mask layer on hard mask layer, ion implantation, removing structured layer, structuring hard mask layer by selectively etching non-implanted or implanted region
05/25/2005DE10257098B4 Verfahren zum Erzeugen hermetisch dicht geschlossener dielektrisch isolierender Trenngräben A method for generating hermetically closed dielectric insulating isolation trenches
05/25/2005DE102004048529A1 Electronic device for driving brushless motor, has semiconductor chip with one contact side bonded to metallic conductor portion through solid soldering agent layer whose softening temperature is used as device operating temperature
05/25/2005DE102004041398A1 Lichtemittierende Vorrichtung mit einer transparenten leitenden Schicht A light emitting device with a transparent conductive layer
05/25/2005DE102004041035A1 Attaching components to substrate involves clamping substrate between heating plate(s), counter pressure plate after populating with components or chips to harden adhesive, whereby at least one plate supports substrate over its area
05/25/2005DE102004032465A1 Bootstrap-Kondensator-Ladeschaltung Bootstrap capacitor charging circuit
05/25/2005DE102004029232A1 Herstellungsverfahren eines Halbleiterbauelements und Halbleiterbauelement Manufacturing method of a semiconductor device and semiconductor device
05/25/2005DE102004024377A1 Wärmeunterstützte Schaltarraykonfiguration für MRAM Heat-assisted switching array configuration for MRAM
05/25/2005DE102004012155B3 Integrated dynamic memory cell comprises a capacitor arranged in a first trench in a semiconductor substrate, and a vertical selective transistor arranged in a second trench in the substrate
05/25/2005DE10196361T5 Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls, Verfahren zur Herstellung eines Verbindungshalbleiters auf Basis von Galliumnitrid, ein Verbindungshalbleiter auf Basis von Galliumnitrid, ein lichtemittierendes Bauelement aus einem Verbindungshalbleiter auf Basis von Galliumnitrid und eine Lichtquelle, die das lichtemittierende Halbleiterbauelement verwendet A method for producing a group III nitride semiconductor crystal, method of manufacturing a compound semiconductor based on gallium nitride, a compound semiconductor based on gallium nitride, a light emitting device made of a compound semiconductor on the basis of gallium nitride and a light source using the light-emitting semiconductor component
05/25/2005CN1620843A Chip-join process to reduce elongation mismatch between the adherents and semiconductor package made thereby
05/25/2005CN1620731A Imaging device in a projection exposure facility
05/25/2005CN1620730A Lateral junction field-effect transistor and its manufacturing method
05/25/2005CN1620729A Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
05/25/2005CN1620728A 半导体装置 Semiconductor device
05/25/2005CN1620727A Semiconductor integrated circuit device and its mfg. method
05/25/2005CN1620725A Electrical component assembly and method of fabrication
05/25/2005CN1620723A Probe card transporting apparatus and to-be-connected body moving mechanism
05/25/2005CN1620722A Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
05/25/2005CN1620721A Selective deposition of a barrier layer on a dielectric material
05/25/2005CN1620720A Method for forming underlying insulation film
05/25/2005CN1620719A Method of making layered superlattice material with ultra-thin top layer
05/25/2005CN1620718A Method of forming layers of oxide of different thicknesses on a surface of a substrate
05/25/2005CN1620717A Cleaning method of substrate treating apparatus, and substrate treating apparatus
05/25/2005CN1620716A A method of improving surface planarity prior to MRAM bit material deposition
05/25/2005CN1620715A Two-mask trench schottky diode
05/25/2005CN1620714A Electroheater for semiconductor treater
05/25/2005CN1620713A Machining substrates, particularly semiconductor wafers
05/25/2005CN1620712A Self-ionized and inductively-coupled plasma for sputtering and resputtering
05/25/2005CN1620711A Apparatus and method for radio frequency decoupling and bias voltage control in a plasma reactor
05/25/2005CN1620704A Method for effective trimming of resistors using pulsed heating and heat localization
05/25/2005CN1620697A MRAM without isolation devices
05/25/2005CN1620678A Electro-optical device manufacturing method, electro-optical device manufactured by the manufacturing method, and electronic device
05/25/2005CN1620639A System and method for point of use delivery, control and mixing chemical and slurry for CMP/cleaning system
05/25/2005CN1620634A Self-aligned pattern formation using dual wavelengths
05/25/2005CN1620633A Bases and surfactants and their use in photoresist compositions for microlithography
05/25/2005CN1620632A Optical proximity correction for phase shifting photolithographic masks
05/25/2005CN1620614A Probe card covering system and method
05/25/2005CN1620601A Detection and classification of micro-defects in semi-conductors
05/25/2005CN1620488A Cmp systems and methods utilizing amine-containing polymers
05/25/2005CN1620357A Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step
05/25/2005CN1620355A Chemical mechanical polishing of copper-oxide damascene structures
05/25/2005CN1620225A Laminated circuit board and its manufacturing method, and manufacturing method for module using the laminated circuit board and its manufacturing apparatus
05/25/2005CN1620219A Plasma generation and control
05/25/2005CN1620215A 显示器件及其制作方法 Display device and manufacturing method thereof
05/25/2005CN1620209A Pixel unit of electroluminescence display and its mfg method
05/25/2005CN1619964A Semiconductor integrated circuit, logic operation circuit, and flip flop
05/25/2005CN1619923A Power generator, semiconductor and method for forming power generator
05/25/2005CN1619904A MBE growth of semiconductor laser diode
05/25/2005CN1619899A Semiconductor laser ageing method
05/25/2005CN1619856A Thin film transistor, method for its manufacture, and circuit or electronic device/apparatus comprising it
05/25/2005CN1619855A 有机半导体晶体管元件 Organic semiconductor transistor element
05/25/2005CN1619853A Light emitting device and method of manufacturing the same
05/25/2005CN1619844A GaN based LED upside down welding combination, and lamp and chip horizontally upside down welding technique
05/25/2005CN1619843A Method of growing trigroup nitride semiconductor hetero crystal structure on silicon base material
05/25/2005CN1619838A Method of manufacturing variable capacitor
05/25/2005CN1619837A Active matrix organic light emitting device having series thin film transistor, and fabrication method therefor
05/25/2005CN1619836A Thin film transistor and method for fabricating the same
05/25/2005CN1619835A Field effect transistor (FET), integrated circuit (IC) including the FETs and a method of forming IC
05/25/2005CN1619834A Method of reducing dislocation-induced leakage in a strained-layer field-effect transistor
05/25/2005CN1619833A Insulated gate bipolar transistor and method of fabricating the same
05/25/2005CN1619832A Insulated gate bipolar transistor and method of fabricating the same
05/25/2005CN1619830A 半导体器件 Semiconductor devices
05/25/2005CN1619826A Manufacturing method of image sensor element
05/25/2005CN1619825A Packaging structure of image sensing component element and its chip packaging method
05/25/2005CN1619822A Static random access storage unit structure and its manufacturing method
05/25/2005CN1619821A Semiconductor device and its mfg method
05/25/2005CN1619820A Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same
05/25/2005CN1619819A Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same
05/25/2005CN1619818A Semiconductor devices having at least one storage node and methods of fabricating the same
05/25/2005CN1619817A Semiconductor devices having different gate dielectrics and methods for manufacturing the same
05/25/2005CN1619816A Fingerprint sensor and fabrication method thereof