Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2005
12/22/2005DE19860084B4 Verfahren zum Strukturieren eines Substrats A method for patterning a substrate
12/22/2005DE19742120B4 Verfahren zum Herstellen einer Verdrahtung für eine Halbleitervorrichtung A method of manufacturing a wiring for a semiconductor device
12/22/2005DE19740949B4 Schutzschaltung gegen elektrostatische Entladung Protection circuit against static discharge
12/22/2005DE19546953B4 Halbleitervorrichtung beziehungsweise Digital-Analog-Wandler mit Widerstandsreihe A semiconductor device or digital-to-analog converter with series resistor
12/22/2005DE112004000152T5 Magnetspeicher, Schreibstrom-Treiberschaltung und Schreibstrom-Treiberverfahren Magnetic memory write current and write current driver circuit driving method
12/22/2005DE10394085T5 Hochohmiger geteilter Poly-P-Widerstand mit geringer Standardabweichung High impedance divided poly-p-resistance with low standard deviation
12/22/2005DE10393909T5 Parallele Fehlerfassung Parallel misdetection
12/22/2005DE10393903T5 Dynamische adaptive Abtastrate für Modellvorhersage Dynamic adaptive sampling for model prediction
12/22/2005DE10245534B4 Teststruktur zum Bestimmen eines Bereiches einer Deep-Trench-Ausdiffusion in einem Speicherzellenfeld Test structure for determining a region of a deep trench outdiffusion in a memory cell array
12/22/2005DE10230729B4 Verfahren zum Erfassen des Endpunktes eines Ätzverfahrens in einem Halbleiterherstellungsgerät und Detektor dafür A method for detecting the endpoint of an etching process in a semiconductor manufacturing apparatus and the detector for
12/22/2005DE102005024869A1 Optische Vorrichtung, die einen optischen Wellenleiter umfaßt, und Verfahren zur Herstellung dieser An optical device comprising an optical waveguide, and method for producing these
12/22/2005DE102005023891A1 Siliziumkarbid-Halbleitervorrichtung und Verfahren zum Herstellen der Gleichen Silicon carbide semiconductor device and method of manufacturing the same
12/22/2005DE102005023670A1 Metal wiring layer formation, for integrated circuit, involves forming metal nitride layer in contact hole, such that concentration of metal nitride layer at bottom of hole is less than that of metal nitride layer at opening of hole
12/22/2005DE102005018346A1 Vollständig verarmte SOI-Mehrfachschwellenspannungs-Anwendung Fully depleted SOI multi-threshold-voltage application
12/22/2005DE102005017814A1 Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung Silicon carbide semiconductor device and process for its preparation
12/22/2005DE102005015418A1 Phosphordotierungsverfahren zum Herstellen von Feldeffekttransistoren mit mehreren gestapelten Kanälen Phosphorus doping process of manufacturing field effect transistors having a plurality of stacked channels
12/22/2005DE102005014932A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
12/22/2005DE102005014714A1 Halbleitervorrichtung mit isoliertem Gate A semiconductor device comprising insulated gate
12/22/2005DE102005009974A1 Transistor mit flachem Germaniumimplantationsbereich im Kanal Transistor with shallow germanium implantation region in the channel
12/22/2005DE102005009062A1 Heterodynlaserinterferometer zum Messen einer Waferstufentranslation Heterodynlaserinterferometer for measuring a wafer stage translation
12/22/2005DE102004040468A1 Optoelektronisches Halbleiterbauelement und Gehäuse-Grundkörper für ein derartiges Bauelement An optoelectronic semiconductor device and housing basic body for such a device
12/22/2005DE102004040077A1 Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung Surface-emitting semiconductor laser device with a vertical emission direction
12/22/2005DE102004038839B3 Greifereinheit, Bestückkopf und Verfahren zum Bestücken von Substraten mit elektrischen Bauelementen Gripper unit, and placement method for loading substrates with electrical components
12/22/2005DE102004028695B3 Breakage sensor for installation near edge of semiconductor substrate has isolation layer and several electrode layers with terminals connected to sensor circuit
12/22/2005DE102004027887A1 Prüfeinrichtung zur elektrischen Prüfung eines Prüflings Test equipment for electrical testing a device under test
12/22/2005DE102004027886A1 Prüfeinrichtung zur elektrischen Prüfung eines Prüflings sowie Verfahren zur Herstellung einer Prüfeinrichtung Checking means for electrical testing of a test specimen as well as methods for preparing a test device
12/22/2005DE102004027496A1 Elektronisches Bauteil Electronic component
12/22/2005DE102004026232A1 Verfahren zum Ausbilden einer integrierten Halbleiterschaltungsanordnung A method of forming a semiconductor integrated circuit arrangement
12/22/2005DE102004026231A1 Verfahren zur Herstellung eines Bereichs mit reduzierter elektrischer Leitfähigkeit innerhalb einer Halbleiterschicht und optoelektronisches Halbleiterbauelement A process for producing a region of reduced electrical conductivity within a semiconductor layer and an optoelectronic semiconductor component
12/22/2005DE102004026149A1 Technik zum Erzeugen mechanischer Spannung in unterschiedlichen Kanalgebieten durch Bilden einer Ätzstoppschicht, die eine unterschiedlich modifizierte innere Spannung aufweist. Technique for generating mechanical tension in different channel regions by forming an etch stop layer which has a different modified internal stress.
12/22/2005DE102004026111A1 Solid electrolyte memory cell production method for semiconductor memories involves doping solid electrolyte material with dopant and then irradiating cell with suitable ions or ion beam either partly or completely
12/22/2005DE102004026109A1 Semiconductor memory includes tellurium-based, fast-growth phase-change material with specified linear crystallization velocity and cubic structure
12/22/2005DE102004026108A1 Integrated semiconductor circuit arrangement containing field effect transistor, is constructed with resistance contacting source, drain and gate
12/22/2005DE102004026092A1 Verfahren zur Herstellung einer mit einem Moldcompound versehenen Chip-Anordnung A method for preparing a molding compound provided with a chip arrangement
12/22/2005DE102004026002A1 Semiconductor assembly for non-volatile memories has solid electrolyte memory cell structure parallel to main surface of semiconductor substrate and has reactive electrode and inert electrode separated in single-stage manner
12/22/2005DE102004025549A1 Ceramic sensor production for engine exhaust gases comprises deposition of circuit structure on ceramic substrate, whilst leaving projections to form connections
12/22/2005DE102004025423A1 Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung Thin film field effect transistor having gate dielectric of organic material and process for its preparation
12/22/2005DE102004025112A1 Process for implanting a semiconductor wafer, used in production of transistors, comprises preparing the wafer with a substrate, applying a resist layer on the surface of the substrate, structuring the resist layer and further processing
12/22/2005DE102004024885A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
12/22/2005DE102004024644A1 Deposition of metallic structure on substrate in semiconductor device manufacture, includes ductile layer to accommodate stresses between structure and substrate by plastic deformation
12/22/2005DE102004024344A1 Making power semiconductor component, forms layered structure containing material of greater dielectric constant and recesses which are filled with semiconductor to form drift zone
12/22/2005DE102004021819B3 Schwingungsdämpfer mit amplitudenselektiver Dämpfkraft Vibration with amplitude-selective damping force
12/22/2005DE102004020915A1 Druckmessvorrichtung für Vakuumanlagen Pressure measuring device for vacuum systems
12/22/2005DE102004010094B3 Halbleiterbauelement mit mindestens einer organischen Halbleiterschicht und Verfahren zu dessen Herstellung A semiconductor device comprising at least one organic semiconductor layer, and process for its preparation
12/22/2005DE10158795B4 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht Magnetoresistive memory cell with dynamic reference layer
12/22/2005DE10144912B4 Verfahren zum Vergrößern der Überlappung zwischen einer in einen Trench eines Halbleiterkörpers eingebrachten Elektrode und einer an eine Seitenwand des Trenches angrenzenden Zone A method for increasing the overlap between an introduced in a trench of a semiconductor body and an electrode adjacent to one side wall of the trench zone
12/22/2005DE10117801B4 Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren Semiconductor power device and manufacturing method thereof
12/22/2005DE10108358B4 Halbleiterscheiben-Poliervorrichtung A wafer polishing apparatus
12/22/2005DE10106678B4 Waferpoliervorrichtung Wafer polishing apparatus
12/22/2005DE10008813B4 Verfahren zur Herstellung einer Flachgraben- Isolationsstruktur und Verfahren zum Einebnen der Oberfäche einer Materialschicht in einer Halbleitervorrrichtung A process for preparing a Flachgraben- isolation structure and method for planarizing a layer of material in the fnish a Halbleitervorrrichtung
12/22/2005CA2569376A1 Method and apparatus for cleaving brittle materials
12/22/2005CA2567930A1 Methods and devices for forming nanostructure monolayers and devices including such monolayers
12/21/2005EP1608211A2 Wired circuit forming board, wired circuit board and thin metal layer forming method
12/21/2005EP1608025A2 Overvoltage protection diode
12/21/2005EP1608024A2 Insulated gate semiconductor device
12/21/2005EP1608018A2 Semiconductor device, methods of operating and manufacturing
12/21/2005EP1608013A1 Method of formation of airgaps around interconnecting line
12/21/2005EP1608012A1 Method of forming trench isolation structure
12/21/2005EP1608011A1 Heat treatment-purpose wafer support tool, and heat treatment device
12/21/2005EP1608010A2 Method of forming connection hole
12/21/2005EP1608009A1 Semiconductor device
12/21/2005EP1608008A2 Semiconductor device fabrication method
12/21/2005EP1608007A1 Method for forming insulating film in semiconductor device
12/21/2005EP1608006A1 Film formation apparatus
12/21/2005EP1608005A1 Vaporizer, film forming apparatus including the same, method of vaporization and method of forming film
12/21/2005EP1608002A1 Gate valve for semiconductor treatment system and vacuum container
12/21/2005EP1608000A2 RF plasma processor
12/21/2005EP1607989A2 Ceramic electronic device and the production method
12/21/2005EP1607931A1 Device substrate and light-emitting device
12/21/2005EP1607886A2 Design method and program for a bus control portion in a semiconductor integrated device
12/21/2005EP1607738A1 Method and system for wafer inspection
12/21/2005EP1607496A1 Electroformed metallization
12/21/2005EP1607493A2 Plasma processes for depositing low dielectric constant films
12/21/2005EP1606983A1 Structural unit and method for the production of a structural unit
12/21/2005EP1606977A2 Coil constructions configured for utilization in physical vapor deposition chambers, and methods of forming coil constructions
12/21/2005EP1606844A2 Semiconductor device with isolation layer
12/21/2005EP1606843A1 Conductive adhesive bonded semiconductor substrates for radiation imaging devices
12/21/2005EP1606841A2 Electronic component comprising a semiconductor chip and a plastic housing, and method for producing the same
12/21/2005EP1606840A1 Wafer scale package and method of assembly
12/21/2005EP1606839A2 A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics
12/21/2005EP1606838A1 Method for calibrating a device, method for calibrating a number of devices lying side by side as well as an object suitable for implementing such a method
12/21/2005EP1606837A1 Vision system and method for calibrating a wafer carrying robot
12/21/2005EP1606836A2 Gripper and method for operating the same
12/21/2005EP1606835A1 Semiconductor device and method of manufacturing thereof
12/21/2005EP1606834A1 Uv nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization
12/21/2005EP1606833A2 A method of fabricating substrateless thin film field-effect devices and an organic thin film transistor obtainable by the method
12/21/2005EP1606828A1 Allowance method for point to ground resistance on tray
12/21/2005EP1606670A2 Applications of semiconductor nano-sized particles for photolithography
12/21/2005EP1606605A2 System for detection of wafer defects
12/21/2005EP1606217A2 Thermal process for reducing the concentration of dinitrogen difluoride and dinitrogen tetrafluoride in nitrogen trifluoride
12/21/2005EP1518143B1 Connection means for setting up an electric connection between a cell, in particular a liquid crystal cell, and a power or control circuit
12/21/2005EP1444723A4 Synthesis strategies based on the appropriate use of inductance effects
12/21/2005EP1436840B1 Semiconductor structure with reduced capacitive coupling between components
12/21/2005EP1435101B1 Spin-valve magnetoresistive device with enhanced performance
12/21/2005EP1415335A4 Use of diverse materials in air-cavity packaging of electronic devices
12/21/2005EP1399294B1 End point detection system for chemical mechanical polishing applications
12/21/2005EP1325053B1 Die-attaching paste and semiconductor device
12/21/2005EP1307777B1 Pneumatic control system and method for shaping deformable mirrors in lithographic projection systems
12/21/2005EP1305795A4 All metal giant magnetoresistive memory
12/21/2005EP1201033B1 Circuit configuration for supplying power to an integrated circuit via a pad
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