Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2005
12/28/2005CN1714455A Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
12/28/2005CN1714453A Method for fabricating semiconductor device
12/28/2005CN1714452A Semiconductor device and its production
12/28/2005CN1714449A Field effect transistor structure, associated semiconductor storage cell, and corresponding production method
12/28/2005CN1714446A IC tiling pattern method, IC so formed and analysis method
12/28/2005CN1714445A Miniature moldlocks for heatsink or flag for an overmolded plastic package
12/28/2005CN1714443A Method of self-assembling electronic circuitry and circuits formed thereby
12/28/2005CN1714441A Methods for forming structure and spacer and related FINFET
12/28/2005CN1714440A Forming polysilicon structures
12/28/2005CN1714439A Integrated antifuse structure for FINFFT and CMOS devices
12/28/2005CN1714438A Method for electrodepositing a metal, especially copper, use of said method and integrated circuit
12/28/2005CN1714437A Method for reducing contact defects in semiconductor cells
12/28/2005CN1714436A Probe for testing flat panel display and manufacturing method thereof
12/28/2005CN1714435A Self-aligned bipolar transistor without spacers and method for fabricating same
12/28/2005CN1714434A Dielectric film forming method
12/28/2005CN1714433A Method for reducing wafer arcing
12/28/2005CN1714432A Slurry composition for secondary polishing of silicon wafer
12/28/2005CN1714431A TFT substrate for liquid crystal display apparatus and method of manufacturing the same
12/28/2005CN1714430A Plasma processing apparatus and plasma processing method
12/28/2005CN1714429A Method for preparing film structure comprising ferroelectric single crystal layer
12/28/2005CN1714428A Method for preparation of ferroelectric single crystal film structure using deposition method
12/28/2005CN1714427A Formation of lattice-tuning semiconductor substrates
12/28/2005CN1714426A Spin-coating methods and apparatus for spin-coating, including pressure sensor
12/28/2005CN1714402A Magnetic storage unit using ferromagnetic tunnel junction element
12/28/2005CN1714315A Applicability improver for photosensitive resin composition and photosensitive resin composition containing the same
12/28/2005CN1714177A Plating uniformity control by contact ring shaping
12/28/2005CN1714169A Support system for a treatment apparatus
12/28/2005CN1714168A Two-layer film for next generation damascene barrier application with good oxidation resistance
12/28/2005CN1713967A Chemical-solution supplying apparatus
12/28/2005CN1713468A Lids for wafer-scale optoelectronic packages
12/28/2005CN1713409A Organic TFT and method of fabricating the same
12/28/2005CN1713400A Spin transistor, programmable logic circuit, and magnetic memory
12/28/2005CN1713399A Semiconductor device
12/28/2005CN1713398A Thin film transistor (TFT) device structure for reducing starting voltage deviation and its manufacture
12/28/2005CN1713397A Thin film transistor and method of fabricating the same
12/28/2005CN1713396A Vertical soi device
12/28/2005CN1713395A Semiconductor device capable of threshold voltage adjustment by applying an external voltage and its manufacture
12/28/2005CN1713392A Manufacturing method of semiconductor wafer having lid part and manufacturing method of semiconductor device
12/28/2005CN1713390A Semiconductor device and method for fabricating the same
12/28/2005CN1713389A Nonvolatile semiconductor memory device and method of manufacturing the same
12/28/2005CN1713387A 半导体存储器件 A semiconductor memory device
12/28/2005CN1713386A Nonvolatile semiconductor memory device and method of manufacturing the same
12/28/2005CN1713385A Nand flash memory with nitride charge storage gates and fabrication process
12/28/2005CN1713384A Semiconductor device and method of manufacturing the same
12/28/2005CN1713383A Semiconductor device and ferroelectric memory, and method for manufacturing semiconductor device
12/28/2005CN1713382A 半导体装置 Semiconductor device
12/28/2005CN1713378A Fuse of a semiconductor memory device and repair process for the same
12/28/2005CN1713372A Method of identifying logical information in a programming and erasing cell by on-side reading scheme
12/28/2005CN1713371A Method of manufacturing flash memory device
12/28/2005CN1713370A Production of multi-layer poly-silicon memory element
12/28/2005CN1713369A Design method, design program, and storage medium for semiconductor integrated device
12/28/2005CN1713368A Method for fabricating semiconductor device
12/28/2005CN1713367A Method of oxidizing object to be processed, oxidation system, and storing medium
12/28/2005CN1713366A Manufacture of semiconductor elements
12/28/2005CN1713365A Stand arrangement and control thereof
12/28/2005CN1713364A Thin-membrane testing clamp and test
12/28/2005CN1713363A Flexible contact-connection device
12/28/2005CN1713362A Semiconductor packing structure and production thereof
12/28/2005CN1713361A Method of manufacturing semiconductor device having recess channel structure
12/28/2005CN1713360A In situ deposition of SiO2 and metal membrane on III-V family compound material
12/28/2005CN1713359A Etching system and treatment of etching agent
12/28/2005CN1713358A Production of power diode and device thereof
12/28/2005CN1713357A Chemical battery with porous indium phosphide, electrochemical corrosive system and method
12/28/2005CN1713356A Polishing pad having a pressure relief channel
12/28/2005CN1713355A Manufacturing method of semiconductor device
12/28/2005CN1713354A Semiconductor wafer and manufacturing process for semiconductor device
12/28/2005CN1713353A 晶片加工方法 Wafer processing method
12/28/2005CN1713352A Manufacture of semiconductor device
12/28/2005CN1713351A Film formation apparatus and method for semiconductor process
12/28/2005CN1713350A Production of selective epitaxial germanium-silicon thin membrane
12/28/2005CN1713349A Production of silicon-base III family nitride thin-membrane without crack from self-adaption flexible layer
12/28/2005CN1713348A Semiconductor bare chip, method of recording id information thereon, and method of identifying the same
12/28/2005CN1713347A Method and apparatus for cutting protective adhesive tapes
12/28/2005CN1713346A Bonding apparatus, bonding method, and method for manufacturing semiconductor device
12/28/2005CN1713345A Machining apparatus
12/28/2005CN1713344A Laser treating apparatus, laser irradiation method and manufacture of semiconductor device
12/28/2005CN1713343A Parts separting, transporting and collecting device
12/28/2005CN1713341A Method for fabricating a capacitor in a semiconductor device
12/28/2005CN1713340A Method for improving transmission noise tolerance of signal
12/28/2005CN1713339A Pull-down mechanism for supporting centre
12/28/2005CN1713060A Thin film transistor of liquid crystal display device and fabrication method thereof
12/28/2005CN1713057A Thin film transistor array substrate and fabricating method thereof
12/28/2005CN1712831A Cleaning chamber, local cleaning system, use thereof and cleaning chamber security system
12/28/2005CN1712560A Vertical CVD apparatus and CVD method using the same
12/28/2005CN1712506A Cleaning composition for semiconductor components and process for manufacturing semiconductor device
12/28/2005CN1712351A Method for manufacturing carbon fibers and use thereof
12/28/2005CN1712333A Substrate turning over apparatus and method, substrate transporting device and method, substrate processing apparatus and method
12/28/2005CN1712144A Ultrasonic cleaning apparatus
12/28/2005CN1234175C Halo-free non-rectifying contact on chip with halo source/drain diffusion
12/28/2005CN1234172C Semiconductor device containing groove type capacitance and its manufacturing methods
12/28/2005CN1234171C Semiconductor memory and voltage application method to semiconductor memory
12/28/2005CN1234170C Method for making integrated circuit device of metal-insulating body-metal capacitor
12/28/2005CN1234165C Manufacturing method of nitride read only memory unit
12/28/2005CN1234164C Process for preparing mask-type ROM
12/28/2005CN1234163C Read-only region and welding pad region method for mask programmable ROM
12/28/2005CN1234162C Method for eliminating signal crosstalk resulted from coupling capacitance of conductive line in deep submicvometer technology
12/28/2005CN1234161C Method of forming embolism and hole
12/28/2005CN1234159C Semiconductor package method
12/28/2005CN1234158C Manufacturing method of packaging base plate and its structure
12/28/2005CN1234157C Self alignment production method and structure with epitaxial base double carrier connected transistor