Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2005
12/29/2005US20050285146 Semiconductor device, manufacturing method of the semiconductor device, and design method of the semiconductor device
12/29/2005US20050285144 Field effect transistor, compound semiconductor substrate and process for forming a recess therein
12/29/2005US20050285143 Semiconductor device
12/29/2005US20050285142 Gallium nitride materials and methods associated with the same
12/29/2005US20050285141 Gallium nitride materials and methods associated with the same
12/29/2005US20050285140 Isolation structure for strained channel transistors
12/29/2005US20050285139 Strained Si/SiGe structures by ion implantation
12/29/2005US20050285138 Persistent p-type group II-VI semiconductors
12/29/2005US20050285137 Semiconductor device with strain
12/29/2005US20050285131 Lids for wafer-scale optoelectronic packages
12/29/2005US20050285130 Light emitting diode having an adhesive layer and manufacturing method thereof
12/29/2005US20050285122 Light emitting display and fabrication method thereof
12/29/2005US20050285120 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
12/29/2005US20050285119 Dynamic p-n junction growth
12/29/2005US20050285117 Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates
12/29/2005US20050285116 Electronic assembly with carbon nanotube contact formations or interconnections
12/29/2005US20050285112 Thin film transistor and method for fabricating the same
12/29/2005US20050285111 Semiconductor apparatus and manufacturing method thereof
12/29/2005US20050285110 Thin film transistor and method of fabricating the same
12/29/2005US20050285109 Novel conductive elements for thin film transistors used in a flat panel display
12/29/2005US20050285108 Pixel circuit and display device having improved transistor structure
12/29/2005US20050285107 Active matrix organic electroluminescent display device including organic thin film transistor and method of manufacturing the display device
12/29/2005US20050285106 Method of reworking structures incorporating low-k dielectric materials
12/29/2005US20050285105 Pressure inspector and method for inspecting liquid crystal display panels
12/29/2005US20050285104 Apparatus and method of removing particles
12/29/2005US20050285103 Methods of forming semiconductor constructions comprising cerium oxide and titanium oxide
12/29/2005US20050285102 Organic TFT and method of fabricating the same
12/29/2005US20050285100 Organic light emitting display and method of fabricating the same
12/29/2005US20050285099 OFET structures with both n- and p-type channels
12/29/2005US20050285097 Integration of strained Ge into advanced CMOS technology
12/29/2005US20050285096 Programmable structure, an array including the structure, and methods of forming the same
12/29/2005US20050285095 Resistive semiconductor element based on a solid-state ion conductor
12/29/2005US20050285094 Phase-Changeable Memory Devices
12/29/2005US20050285093 Magnetic storage device using ferromagnetic tunnel junction element
12/29/2005US20050285054 Charged particle beam drawing apparatus
12/29/2005US20050285053 Method and apparatus for electron beam processing of substrates
12/29/2005US20050285052 Scanning mechanism of an ion implanter
12/29/2005US20050285048 Discharge radiation source, in particular uv radiation
12/29/2005US20050285033 luminophor materials comprising terbium, gadolinium-doped rare-earth aluminum scandium borate, used as light sources for fluorescent lamps or plasma display panels
12/29/2005US20050284921 Method of soldering electronic component having solder bumps to substrate
12/29/2005US20050284920 Solder bumps formation using solder paste with shape retaining attribute
12/29/2005US20050284915 Apparatus and method for indexing of substrates and lead frames
12/29/2005US20050284912 Flange-mounted transducer
12/29/2005US20050284844 Cleaning composition for semiconductor components and process for manufacturing semiconductor device
12/29/2005US20050284843 Plasma etching methods and contact opening forming methods
12/29/2005US20050284770 A multilayer pad having a ring-shaped upper polish layer and replaceable conductive layer; attaching to exterior power source; controlling the rate of copper material removal from printed circuits, determining each polishing time in each zone; tools for making semiconductors
12/29/2005US20050284767 electroplating; movable electrodes; as anode moves over wafer, electric current is applied through meniscus between anode and wafer
12/29/2005US20050284754 Electric field reducing thrust plate
12/29/2005US20050284751 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment
12/29/2005US20050284616 Advanced microelectronic heat dissipation package and method for its manufacture
12/29/2005US20050284578 Bonding apparatus, bonding method, and method for manufacturing semiconductor device
12/29/2005US20050284576 Method and apparatus for treating wafer edge region with toroidal plasma
12/29/2005US20050284575 Processing system and operating method of processing system
12/29/2005US20050284574 Plasma processing apparatus and processing method
12/29/2005US20050284572 Heating system for load-lock chamber
12/29/2005US20050284571 Dry-etching method and apparatus
12/29/2005US20050284568 Removing unwanted film from wafer edge region with reactive gas jet
12/29/2005US20050284535 Transportable container including an internal environment monitor
12/29/2005US20050284517 Photovoltaic cell, photovoltaic cell module, method of fabricating photovoltaic cell and method of repairing photovoltaic cell
12/29/2005US20050284516 Solar laminates as laminated safety glass
12/29/2005US20050284509 Ultrasonic cleaning apparatus
12/29/2005US20050284375 Method and apparatus for processing a workpiece
12/29/2005US20050284372 Chamber component having grooved surface with depressions
12/29/2005US20050284371 Deposition apparatus for providing uniform low-k dielectric
12/29/2005US20050284369 Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position
12/29/2005US20050284366 Systems and methods for building tamper resistant coatings
12/29/2005US20050284362 Apparatus for processing surface of substrate
12/29/2005US20050284274 Integrated circuit package separators
12/29/2005US20050283993 Method and apparatus for fluid processing and drying a workpiece
12/29/2005US20050283972 Apparatus and method for mounting component
12/29/2005DE4329837B4 Verfahren zum Herstellen eines Silizium-Halbleiterbauelements A method of manufacturing a silicon semiconductor device
12/29/2005DE19860163B4 Verfahren zum Trockenätzen eines Wafers A method for dry etching a wafer
12/29/2005DE19808326B4 Diamond-based microactuator for ink jet spray heads
12/29/2005DE19752637B4 Verfahren zur Herstellung einer Leitungsanordnung einer Halbleitereinrichtung A process for producing a line arrangement of a semiconductor device
12/29/2005DE19723203B4 Verfahren zum Herstellen eines Halbleiterbauteils in Chipgröße A method of manufacturing a semiconductor device in chip size
12/29/2005DE19640311B4 Halbleiterbauelement mit Lateralwiderstand und Verfahren zu dessen Herstellung A semiconductor device comprising lateral resistor and method of manufacture
12/29/2005DE19636735B4 Mehrschichtiges Schaltungssubstrat und Verfahren zu seiner Herstellung A multi-layer circuit substrate and method for its preparation
12/29/2005DE19625404B4 Verfahren zur Herstellung einer Feldoxidschicht in einer Halbleitervorrichtung A process for producing a field oxide layer in a semiconductor device
12/29/2005DE112004000236T5 Maskenbearbeitungsvorrichtung, Maskenbearbeitungs-Verfahren, Programm und Maske Mask processing apparatus, mask processing method, program and mask
12/29/2005DE112004000218T5 Graben-MOSFET Technologie für DC/DC Wandleranwendungen Trench MOSFET technology for DC / DC Converter Applications
12/29/2005DE112004000211T5 System und Verfahren unter Verwendung von Migration-Enhanced-Epitaxie zum Abflachen aktiver Schichten und zur mechanischen Stabilisierung von mit oberflächenemittierenden Lasern assoziierten Quantentöpfen System and method using migration enhanced epitaxy of active layers for flattening and for mechanical stabilization of surface emitting lasers associated with quantum wells
12/29/2005DE112004000192T5 Hartmaske mit hoher Selektivität für IR-Sperrschichten zur Herstellung eines ferroelektrischen Kondensators Hard mask with a high selectivity for IR-blocking layers for the production of a ferroelectric capacitor
12/29/2005DE112004000176T5 Magnetspeicherzelle, Magnetspeicher und Magnetspeicher-Herstellverfahren The magnetic memory cell, the magnetic memory and magnetic storage manufacturing
12/29/2005DE10394018T5 Lichtemittierende Halbleitervorrichtung auf Borphosphid-Basis und Verfahren zu ihrer Herstellung A semiconductor light emitting device boron phosphide-based and processes for their preparation
12/29/2005DE10393309T5 Nitrid- und Polysiliziumgrenzschicht mit Titanschicht Nitride and polysilicon boundary layer with titanium layer
12/29/2005DE10392540T5 Verfahren zum Korrigieren einer Maske A method for correcting a mask
12/29/2005DE10347731B4 Verfahren zur Herstellung einer Halbleiterstruktur unter Verwendung von Hartmaskenschichten und Unterätzschritten A method of fabricating a semiconductor structure using the hard mask layers and Unterätzschritten
12/29/2005DE10328811B4 Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur Compound to form a self-assembled monolayer layer structure semiconductor device having a layer structure and process for producing a layer structure
12/29/2005DE10255936B4 Verfahren zur Herstellung einer Isolationsschicht und Verfahren zum Steuern einer Stickstoffkonzentration während der Herstellung der Isolationsschicht A process for producing an insulating layer and method for controlling a nitrogen concentration during the production of the insulation layer
12/29/2005DE10246282B4 Prober zum Testen von Substraten bei tiefen Temperaturen Prober for testing of substrates at low temperatures
12/29/2005DE10239868B4 Verfahren zur Erzeugung von tiefen dotierten Säulenstrukturen in Halbleiterwafern und hierdurch hergestellte Trench-Transistoranordnung A process for the production of deep doped columnar structures in semiconductor wafers, and thereby trench transistor device manufactured
12/29/2005DE102005021803A1 Capacitor structure used in an electrical insulator comprises an insulating layer containing praseodymium oxide mixed with titanium or titanium nitride arranged between a first electrode and a second electrode
12/29/2005DE102005010056A1 Rücksetzschaltungsanordnung für eine integrierte Schaltung Reset circuitry for an integrated circuit
12/29/2005DE102004063926A1 Konfigurierbare Treiberzelle eines logischen Zellenfeldes Configurable driver cell of a logic cell array
12/29/2005DE102004029516B3 Herstellungsverfahren für eine Schattenmaske in einem Graben einer mikroelektronischen oder mikromechanischen Struktur sowie Verwendung derselben Manufacturing method of a shadow mask in a trench of a microelectronic or micromechanical structure and using the same
12/29/2005DE102004028680A1 Partitioning wafer chips includes etching the walls of a mechanically formed trench in the top wafer surface to extend the trench at least to the lower surface of the wafer
12/29/2005DE102004028030A1 Beschichtungsverfahren für strukturierte Substratoberflächen Coating method for structured substrate surfaces
12/29/2005DE102004027905A1 Conveying device for transporting substrates on a coating production line has carrier, drive and stabilizer modules with moving heads and acceleration devices
12/29/2005DE102004027489A1 Verfahren zum Anordnen von Chips eines ersten Substrats auf einem zweiten Substrat A method of disposing of chips of a first substrate on a second substrate
12/29/2005DE102004027356A1 Production of an integrated switching circuit used in the semiconductor industry comprises forming a layer stack formed by a dielectric layer and a gate layer on the substrate, removing the gate layer and depositing a metallic layer