Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2006
01/05/2006US20060001119 III-V semiconductor nanocrystal complexes and methods of making same
01/05/2006US20060001114 Apparatus and method of wafer level package
01/05/2006US20060001113 Magnetic sensor of very high sensitivity
01/05/2006US20060001112 Semiconductor device and method for manufacturing the same
01/05/2006US20060001111 Semiconductor device
01/05/2006US20060001110 Lateral trench MOSFET
01/05/2006US20060001109 High mobility tri-gate devices and methods of fabrication
01/05/2006US20060001106 Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
01/05/2006US20060001105 Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
01/05/2006US20060001104 Semiconductor device having STI with nitride liner
01/05/2006US20060001103 Interconnect structure in integrated circuits
01/05/2006US20060001097 Semiconductor device and manufacturing method of the same
01/05/2006US20060001095 Ultra thin body fully-depleted soi mosfets
01/05/2006US20060001094 Semiconductor on insulator structure
01/05/2006US20060001093 Silicon-on insulator (SOI) substrate having dual surface crystallographic orientations and method of forming same
01/05/2006US20060001091 Thin film transistor (TFT) and flat panel display including the TFT and their methods of manufacture
01/05/2006US20060001090 SOI substrate and method for manufacturing the same
01/05/2006US20060001089 Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer
01/05/2006US20060001088 Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
01/05/2006US20060001083 Scalable Flash/NV structures and devices with extended endurance
01/05/2006US20060001082 Floating-gate field-effect transistors having doped aluminum oxide dielectrics
01/05/2006US20060001079 Electronic systems having doped aluminum oxide dielectrics
01/05/2006US20060001078 Method for fabricating NAND type dual bit nitride read only memory
01/05/2006US20060001077 Split gate type flash memory device and method of manufacturing the same
01/05/2006US20060001075 Charge trapping memory device with two separated non-conductive charge trapping inserts and method for making the same
01/05/2006US20060001074 Three dimensional flash cell
01/05/2006US20060001073 Use of voids between elements in semiconductor structures for isolation
01/05/2006US20060001072 Methods of forming a gated device
01/05/2006US20060001071 Forming high-k dielectric layers on smooth substrates
01/05/2006US20060001070 Capacitor of a memory device and fabrication method thereof
01/05/2006US20060001069 Composition for forming dielectric layer, MIM capacitor and process for its production
01/05/2006US20060001067 Fabrication method for a semiconductor structure having integrated capacitors and corresponding semicomductor structure
01/05/2006US20060001066 Semiconductor Constructions
01/05/2006US20060001065 Alignment key structures in semiconductor devices including protected electrode structures and methods of fabricating the same
01/05/2006US20060001064 Methods for the lithographic deposition of ferroelectric materials
01/05/2006US20060001062 Method for fabricating CMOS image sensor
01/05/2006US20060001058 Fin field effect transistor memory cell
01/05/2006US20060001057 Schottky device and method of forming
01/05/2006US20060001054 Semiconductor processing method and field effect transistor
01/05/2006US20060001052 Dual-sided capacitor and method of formation
01/05/2006US20060001051 Thin film semiconductor circuit, manufacturing method thereof, and image display apparatus utilizing the same thin film semiconductor circuit
01/05/2006US20060001050 High voltage FET gate structure
01/05/2006US20060001049 Service programmable logic arrays with low tunnel barrier interpoly insulators
01/05/2006US20060001044 Method for manufacturing compound semiconductor wafer and compound semiconductor device
01/05/2006US20060001043 CMOS image sensor and fabricating method thereof
01/05/2006US20060001040 High integrity protective coatings
01/05/2006US20060001039 Method of forming buried channels and microfluidic devices having the same
01/05/2006US20060001038 Manufacture of a layer of optical interconnection on an electronic circuit
01/05/2006US20060001035 Light emitting element and method of making same
01/05/2006US20060001032 Light-emitting semiconductor device and method of fabrication
01/05/2006US20060001031 Light emitting element and method of making same
01/05/2006US20060001027 Liquid crystal display device and method of fabricating the same
01/05/2006US20060001026 Semiconductor device and method of manufacturing the same
01/05/2006US20060001025 Semiconductor device and method for fabricating the same
01/05/2006US20060001024 Display device, method of production of the same, and projection type display device
01/05/2006US20060001023 Method of manufacturing active matrix substrate with height control member
01/05/2006US20060001022 Methods for making nearly planar dielectric films in integrated circuits
01/05/2006US20060001021 Multiple semiconductor inks apparatus and method
01/05/2006US20060001019 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
01/05/2006US20060000870 Bonding apparatus and method of bonding for a semiconductor chip
01/05/2006US20060000822 Ceramic heater, wafer heating device using thereof and method for manufacturing a semiconductor substrate
01/05/2006US20060000808 Polishing solution of metal and chemical mechanical polishing method
01/05/2006US20060000806 Substrate carrier for surface planarization
01/05/2006US20060000804 Specimen surface processing apparatus and surface processing method
01/05/2006US20060000803 Plasma processing method and apparatus
01/05/2006US20060000800 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
01/05/2006US20060000799 Methods and apparatus for determining endpoint in a plasma processing system
01/05/2006US20060000797 Methods and apparatus for the optimization of etch resistance in a plasma processing system
01/05/2006US20060000796 Method for controlling critical dimensions and etch bias
01/05/2006US20060000708 Noble metal contacts for plating applications
01/05/2006US20060000704 Solution treatment apparatus and solution treatment method
01/05/2006US20060000638 Micro-castellated interposer
01/05/2006US20060000635 Method for making a circuit plate
01/05/2006US20060000584 Advanced microelectronic heat dissipation package and method for its manufacture
01/05/2006US20060000550 Apparatus for peeling release film
01/05/2006US20060000506 Organic photovoltaic component with encapsulation
01/05/2006US20060000504 Solar module having a connecting element
01/05/2006US20060000500 Thermoelectric module
01/05/2006US20060000494 Self-draining edge wheel system and method
01/05/2006US20060000487 Megasonic cleaning efficiency using auto-tuning of a RF generator at constant maximum efficiency
01/05/2006US20060000414 Semiconductor processing equipment for forming films of uniform properties on semiconductor substrates
01/05/2006US20060000378 Positioning apparatus and method of manufacturing same
01/05/2006US20060000325 Linear via punch
01/05/2006US20060000071 Process for fabrication of ultracapacitor electrodes using activated lamp black carbon
01/05/2006DE19933480B4 Verfahren zur Herstellung eines zylindrischen Kondensators A method for producing a cylindrical capacitor
01/05/2006DE19819200B4 Solarzelle mit Kontaktstrukturen und Verfahren zur Herstellung der Kontaktstrukturen Solar cell with contact structures and methods for making the contact structures
01/05/2006DE19651832B4 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
01/05/2006DE19629534B4 CMOS-Vorrichtung mit sechseckigen Zellen CMOS device with hexagonal cells
01/05/2006DE19621753B4 Verfahren zur Bildung eines Übergangs in Fremdionengebieten einer EEPROM-Flashzelle mittels Schrägwinkel-Fremdionen-Implantation A process for forming a transition in foreign ions areas of an EEPROM Flash cell by means of skew angle impurity ion implantation
01/05/2006DE10205047B4 Sensor, insbesondere zur Messung an oder in Flüssigkeiten sowie Verfahren zur Herstellung desselben Of the same sensor, in particular for measurement at or in fluids and methods for preparing
01/05/2006DE102005025951A1 Verfahren zum Herstellen einer Mehrschicht-Gatestapelstruktur mit einer Metallschicht und Gatestapelstruktur für eine FET-Vorrichtung A method of manufacturing a multilayer gate stack structure with a metal layer and gate stack structure for a FET device
01/05/2006DE102005020972A1 Halbleiterpackung mit leitfähigen Bondhügeln und zugehöriges Herstellungsverfahren Semiconductor package with conductive bumps and manufacturing method thereof
01/05/2006DE102005016071A1 Tunnelmagnetwiderstandsvorrichtung Tunnel magnetoresistance device
01/05/2006DE102004060443A1 Semiconductor device, e.g. metal oxide semiconductor field effect transistor, comprises silicon substrate, insulating film, conductive electrode, and device isolation film
01/05/2006DE102004029945A1 Production of a doped zone in the region of a surface of a semiconductor layer used in the production of MOSFETs comprises forming an amorphous semiconductor layer in the region of the semiconductor layer and further processing
01/05/2006DE102004029944A1 Circuit parts determining method for use at load with variable signal, involves accomplishing equal signal analysis for circuit based on computer implemented model by considering equal signal depending on parameters of variable signal
01/05/2006DE102004029929A1 Production of a microstructure used in the production of stacked capacitors and MOSTs comprises preparing a substrate, producing an insulating layer in the substrate to a prescribed depth and further processing
01/05/2006DE102004029436A1 Verfahren zum Herstellen eines Festkörperelektrolytmaterialbereichs A method for producing a solid electrolyte material region
01/05/2006DE102004028933A1 Verfahren zur Herstellung einer vergrabenen metallischen Schicht in einem Halbleiterkörper und Halbleiterbauelement mit einer vergrabenen metallischen Schicht A process for producing a buried metallic layer in a semiconductor body and the semiconductor component with a buried metallic layer
01/05/2006DE102004028852A1 Verfahren zur Ausbildung von Trench-Speicherzellenstrukturen für DRAMs Method of forming trench DRAM memory cell structures for