Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2006
02/21/2006US7001529 Pre-endpoint techniques in photoresist etching
02/21/2006US7001498 Thin film transistor (TFT); apparatus has a plurality of chambers that are adapted for movement in a first direction along the surface to be electroplated; liquid crystal displays for example
02/21/2006US7001492 Combines a potential or current reversal waveform with variation in the amplitude and duration of the applied potential or current pulse. The method includes, over time, varying the duration of the pulse and continuously decreasing
02/21/2006US7001481 Method and system providing high flux of point of use activated reactive species for semiconductor processing
02/21/2006US7001471 Method and apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device
02/21/2006US7001470 Cleaning process for photomasks
02/21/2006US7001461 Crystallization apparatus, crystallization method, and phase shifter
02/21/2006US7001455 Method and apparatus for doping semiconductors
02/21/2006US7001260 Carrier head with a compressible film
02/21/2006US7001257 Multi-chamber carrier head with a flexible membrane
02/21/2006US7001253 an abrasive, a carrier, and either boric acid, or a conjugate base in a non-buffered aqueous solution; abrasive can be fixed on a pad or suspended in solution; high speed polishing, planarization efficiency, uniformity
02/21/2006US7001247 Processing apparatus provided with backpressure sensor
02/21/2006US7001246 Method and apparatus for monitoring a metal layer during chemical mechanical polishing
02/21/2006US7001245 Substrate carrier with a textured membrane
02/21/2006US7001139 Robot arm mechanism
02/21/2006US7001129 Loadlock apparatus and structure for creating a seal between an elevator drive shaft and the loadlock chamber thereof
02/21/2006US7001086 Developing method, substrate treating method, and substrate treating apparatus
02/21/2006US7000664 Sheet set apparatus for sealing preparation, output lead wire set apparatus for sealing preparation, and sealing preparation apparatus
02/21/2006US7000653 High pressure processing apparatus and high pressure processing method
02/21/2006US7000623 Apparatus and method for substrate preparation implementing a surface tension reducing process
02/21/2006US7000622 Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
02/21/2006US7000621 Methods and apparatuses for drying wafer
02/21/2006US7000565 Plasma surface treatment system and plasma surface treatment method
02/21/2006US7000418 apparatus and method of cooling of substrates in the manufacture of magnetic memory disks for computers
02/21/2006US7000416 Cooling apparatus and plasma processing apparatus having cooling apparatus
02/21/2006US7000315 Method of making photolithographically-patterned out-of-plane coil structures
02/18/2006CA2487121A1 Laser processing apparatus and method using polygon mirror
02/16/2006WO2006017847A2 Silicon-insulator thin-film structures for optical modulators and methods of manufacture
02/16/2006WO2006017376A2 Semiconductor power device having a top-side drain using a sinker trench
02/16/2006WO2006017142A2 Monitoring device for transport pods
02/16/2006WO2006017014A2 Energy harvesting molecules and photoresist technology
02/16/2006WO2006017009A2 Surface lubrication microstructures
02/16/2006WO2006016972A2 Fabrication of an eeprom cell with emitter-polysilicon source/drain regions
02/16/2006WO2006016925A1 Photosensitive compositions based on polycyclic polymers
02/16/2006WO2006016914A2 Methods for nanowire growth
02/16/2006WO2006016739A1 Method of fabricating strained thin film semiconductor layer
02/16/2006WO2006016731A1 Growth method of nitride semiconductor layer and light emitting device using the growth method
02/16/2006WO2006016678A1 Semiconductor device and its manufacturing method
02/16/2006WO2006016677A1 Film forming apparatus and vaporizer
02/16/2006WO2006016672A1 Siliceous film with smaller flat band shift and method for producing same
02/16/2006WO2006016669A1 Method for manufacturing semiconductor device
02/16/2006WO2006016659A1 Nitrogen doped silicon wafer and manufacturing method thereof
02/16/2006WO2006016650A1 Electrode substrate
02/16/2006WO2006016642A1 Semiconductor device manufacturing method and plasma oxidation treatment method
02/16/2006WO2006016619A1 Substrate processing apparatus, use state ascertaining method, and false use preventing method
02/16/2006WO2006016584A1 Optical characteristic measuring device, optical characteristic measuring method, exposure device, exposure method, and device manufacturing method
02/16/2006WO2006016579A1 Method of determining thermal property of substrate and method of deciding heat treatment condition
02/16/2006WO2006016551A1 Method for controlling exposure system, exposure method and system using same, and method for manufacturing device
02/16/2006WO2006016550A1 Method for measuring heating plate temperature, substrate processing equipment, and computer program for measuring heating plate temperature
02/16/2006WO2006016532A1 Method of connecting electric component and heater
02/16/2006WO2006016496A1 Method and equipment for forming oxide film
02/16/2006WO2006016489A1 Substrate processing method
02/16/2006WO2006016469A1 Illumination optical equipment, exposure system and method
02/16/2006WO2006016367A2 Semiconductor cooling system and process for manufacturing the same
02/16/2006WO2006016030A1 Mechanochemical polishing composition, preparing and using method
02/16/2006WO2006015642A2 Electric component with a flip-chip construction
02/16/2006WO2006015636A1 Process system and device for transporting substrates
02/16/2006WO2005122701A3 Ceramic block provided with built-in electrode and method for manufacturing the ceramic block
02/16/2006WO2005098085A3 Multi-stage curing of low k nano-porous films
02/16/2006WO2005093807A8 Oxidation process of a sige layer and applications thereof
02/16/2006WO2005088680A3 Process for conveying solids particles
02/16/2006WO2005084164A3 Nanotube-based switching elements and logic circuits
02/16/2006WO2005083795A8 Method for manufacturing semiconductor device and plasma oxidation method
02/16/2006WO2005082122A3 Method of making a semiconductor device using treated photoresist
02/16/2006WO2005078509A3 Mems scanning system with improved performance
02/16/2006WO2005074450A3 Substrate holder having a fluid gap and method of fabricating the substrate holder
02/16/2006WO2005034195A3 Growth of high-k dielectrics by atomic layer deposition
02/16/2006WO2005029540A3 Substrate carrier for electroplating solar cells
02/16/2006WO2005022966A3 A method for pattern metalization of substrates
02/16/2006WO2005010949A3 Solution to thermal budget
02/16/2006WO2005008726A3 Flip chip device assembly machine
02/16/2006WO2004114389A9 Nonvolatile memory device with a floating gate comprising semiconductor nanocrystals
02/16/2006WO2004107413A3 Plasma ashing apparatus and endpoint detection process
02/16/2006WO2004078936A3 Methods for preventing gluconoylation of proteins
02/16/2006US20060036974 IP-based LSI design system and design method
02/16/2006US20060036409 Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
02/16/2006US20060036352 Anti-vibration technique
02/16/2006US20060035571 Polishing apparatus
02/16/2006US20060035569 Integrated system for processing semiconductor wafers
02/16/2006US20060035478 Variable mask device for crystallizing silicon layer and method for crystallizing using the same
02/16/2006US20060035477 Methods and systems for rapid thermal processing
02/16/2006US20060035476 Method to fill the gap between coupled wafers
02/16/2006US20060035475 Semiconductor substrate processing apparatus
02/16/2006US20060035474 Increasing retention time for memory devices
02/16/2006US20060035473 Method for stabilizing high pressure oxidation of a semiconductor device
02/16/2006US20060035472 Master base for fabrication and method for manufacturing the same
02/16/2006US20060035471 Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge
02/16/2006US20060035470 Method for manufaturing semiconductor device and substrate processing system
02/16/2006US20060035469 Methods for forming an undercut region and electronic devices incorporating the same
02/16/2006US20060035468 Semiconductor device and method for producing the same
02/16/2006US20060035467 Method for etching mesa isolation in antimony-based compound semiconductor structures
02/16/2006US20060035466 Method for manufacturing plasma display panels
02/16/2006US20060035465 Methods for reducing a thickness variation of a nitride layer formed in a shallow trench isolation CMP process and for forming a device isolation film of a semiconductor device
02/16/2006US20060035464 Method of planarizing a semiconductor substrate
02/16/2006US20060035463 Treatment of silicon prior to nickel silicide formation
02/16/2006US20060035462 Systems and methods for forming metal-containing layers using vapor deposition processes
02/16/2006US20060035461 Copper line of semiconductor device and method for forming the same
02/16/2006US20060035460 Wiring structure for integrated circuit with reduced intralevel capacitance
02/16/2006US20060035459 Method of forming narrowly spaced flash memory contact openings and lithography masks
02/16/2006US20060035458 Semiconductor element