Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2006
02/09/2006WO2006013508A2 Wafer with improved conductive loops in the dicing lines
02/09/2006WO2006013257A1 Surface microstructuring device
02/09/2006WO2006013230A2 Manufacture of a layer including a component
02/09/2006WO2006013137A2 Method for etching a layer on a substrate
02/09/2006WO2006012921A1 Process of production of carbon nanotube rings
02/09/2006WO2006012840A1 Laser doping of solid bodies using a linear-focussed laser beam and production of solar-cell emitters based on said method
02/09/2006WO2005124830A3 Apparatus and method for indexing of substrates and lead frames
02/09/2006WO2005114716A3 Process for metallic contamination reduction in silicon wafers
02/09/2006WO2005078772A8 Method and apparatus for making a mems scanner
02/09/2006WO2005060671A3 Polyhedral oligomeric silsesquioxanes and metallized polyhedral oligomeric silsesquioxanes as coatings, composites and additives
02/09/2006WO2005048275A3 COMPOSITIONS AND METHODS FOR THE ELECTROLESS DEPOSITION OF NiFe ON A WORK PIECE
02/09/2006WO2005020282A3 Methods of forming a transistor with an integrated metal silicide gate electrode
02/09/2006WO2005015311A3 Near-field exposure method and apparatus, near-field exposure mask, and device manufacturing method
02/09/2006WO2004104490A9 Self-contained heating unit and drug-supply unit employing same
02/09/2006US20060031809 Method for interlayer and yield based optical proximity correction
02/09/2006US20060031788 Optimization algorithm to optimize within substrate uniformities
02/09/2006US20060031660 Apparatus, method, system and executable module for configuration and operation of adaptive integrated circuitry having fixed, application specific computational elements
02/09/2006US20060031655 Computer readable storage medium and semiconductor integrated circuit device
02/09/2006US20060031068 Analysis method
02/09/2006US20060030503 Slurry for CMP, polishing method and method of manufacturing semiconductor device
02/09/2006US20060030167 Method and system for source switching and in-situ plasma bonding
02/09/2006US20060030166 Laser annealing method
02/09/2006US20060030165 Multi-step anneal of thin films for film densification and improved gap-fill
02/09/2006US20060030164 Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
02/09/2006US20060030163 Methods, complexes, and system for forming metal-containing films
02/09/2006US20060030162 Method to avoid threshold voltage shift in thicker dielectric films
02/09/2006US20060030161 Film forming method
02/09/2006US20060030160 Backside unlayering of MOSFET devices for electrical and physical characterization
02/09/2006US20060030159 Method of making dual damascene with via etch through
02/09/2006US20060030158 Chemical mechanical polishing; an abrasive, an organic oxidizerquinone moiety, a paraphenylenediamine, a phenazine, a thionine, a phenoxazine, phenoxathiin, an indigo, or an indophenol compound, and a liquid carrier
02/09/2006US20060030157 Methods and apparatus configurations for affecting movement of processing fluids within a microelectronic topography chamber and a method for passivating hardware within a microelectronic topography processing chamber
02/09/2006US20060030156 Abrasive conductive polishing article for electrochemical mechanical polishing
02/09/2006US20060030155 Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
02/09/2006US20060030154 Polishing inhibiting layer forming additive, slurry and cmp method
02/09/2006US20060030153 Apparatus and method for manufacturing semiconductor device incorporating fuse elements
02/09/2006US20060030152 Method of manufacturing substrate having recessed portions for microlenses and transmissive screen
02/09/2006US20060030151 Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
02/09/2006US20060030150 Packaged microelectronic devices and methods for packaging microelectronic devices
02/09/2006US20060030149 Depositing material on photosensitive material
02/09/2006US20060030148 Formation of a tantalum-nitride layer
02/09/2006US20060030147 Selectively coating bond pads
02/09/2006US20060030146 Source lines for NAND memory devices
02/09/2006US20060030145 Methods of forming a conductive contact through a dielectric
02/09/2006US20060030144 Method of fabricating integrated circuitry
02/09/2006US20060030143 Barrier layer configurations and methods for processing microelectronic topographies having barrier layers
02/09/2006US20060030142 Semiconductor power device having a top-side drain using a sinker trench
02/09/2006US20060030141 Method to form an interconnect
02/09/2006US20060030140 Method of making bondable leads using positive photoresist and structures made therefrom
02/09/2006US20060030139 Methods of forming lead free solder bumps and related structures
02/09/2006US20060030138 Layout method for semiconductor integrated circuit device
02/09/2006US20060030137 Methods for reducing void formation in semiconductor devices and related devices
02/09/2006US20060030136 Method of fabricating a gate oxide layer
02/09/2006US20060030135 Providing a substrate, providing an aqueous solution that provides homogeneous hafnium complexes and hafnium nanoclusters, forming said self-assembled monolayer, exposing substrate having to aqueous solution, wherein hafnium complexes and hafnium nanoclusters are deposited
02/09/2006US20060030134 Ion sources and ion implanters and methods including the same
02/09/2006US20060030133 Relaxed, low-defect SGOI for strained Si CMOS applications
02/09/2006US20060030132 Method for manufacturing a crystalline silicon layer
02/09/2006US20060030131 Method for fabricating crystalline silicon
02/09/2006US20060030130 Method of dicing a wafer
02/09/2006US20060030129 Method and apparatus for dividing an adhesive film mounted on a wafer
02/09/2006US20060030128 Structure and method of liner air gap formation
02/09/2006US20060030127 Method of fabricating semiconductor device
02/09/2006US20060030126 Method for producing semiconductor elements
02/09/2006US20060030125 Laser separation of encapsulated submount
02/09/2006US20060030124 Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass
02/09/2006US20060030123 Method for bonding a pair of silicon wafers together, and a semiconductor wafer
02/09/2006US20060030122 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
02/09/2006US20060030121 Epitaxial semiconductor layer and method
02/09/2006US20060030120 Method of performing double-sided processes upon a wafer
02/09/2006US20060030119 Method of manufacturing semiconductor device
02/09/2006US20060030118 Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material
02/09/2006US20060030117 Methods for cleaning a semiconductor substrate having a recess channel region
02/09/2006US20060030116 Methods of fabricating integrated circuit capacitors using a dry etching process
02/09/2006US20060030115 Integrated circuit devices including passive device shielding structures and methods of forming the same
02/09/2006US20060030114 Method for forming junction varactor and apparatus thereof
02/09/2006US20060030113 Heterojunction bipolar transistor and method for fabricating the same
02/09/2006US20060030112 Manufacturing methods and structures of memory device
02/09/2006US20060030111 Method of manufacturing semiconductor device
02/09/2006US20060030110 Semiconductor memory device and method of manufacturing the same
02/09/2006US20060030109 Method to produce highly doped polysilicon thin films
02/09/2006US20060030108 Semiconductor device and method of fabricating the same
02/09/2006US20060030107 CMOS compatible process with different-voltage devices
02/09/2006US20060030106 Gate conductor isolation and method for manufacturing same
02/09/2006US20060030105 Method of discharging a semiconductor device
02/09/2006US20060030104 Integrating n-type and p-type metal gate transistors
02/09/2006US20060030103 Semiconductor device and method of manufacturing the same
02/09/2006US20060030102 Flash memory devices including a pass transistor and methods of forming the same
02/09/2006US20060030101 Semiconductor device and method for fabricating the same
02/09/2006US20060030100 Semiconductor device and method for fabricating the same
02/09/2006US20060030099 Beta control using a rapid thermal oxidation
02/09/2006US20060030098 Method of forming an oxide layer on a compound semiconductor structure
02/09/2006US20060030097 Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed
02/09/2006US20060030096 Methods of enabling polysilicon gate electrodes for high-k gate dieletrics
02/09/2006US20060030095 Methods for elimination of arsenic based defects
02/09/2006US20060030094 Method of manufacturing a semiconductor device with a strained channel
02/09/2006US20060030093 Strained semiconductor devices and method for forming at least a portion thereof
02/09/2006US20060030092 Low threshold voltage PMOS apparatus and method of fabricating the same
02/09/2006US20060030091 Word line structure with single-sided partially recessed gate structure
02/09/2006US20060030090 Thin film devices for flat panel displays and methods for forming the same
02/09/2006US20060030089 Method for fabricating polycrystalline silicon thin film transistor
02/09/2006US20060030088 Shadow frame with cross beam for semiconductor equipment