Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2006
08/16/2006CN1819244A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819243A Image sensor having inner lens
08/16/2006CN1819242A CMOS image sensor and method for fabricating the same
08/16/2006CN1819241A CMOS image sensor and method for fabricating the same
08/16/2006CN1819240A CMOS image sensor and method for fabricating the same
08/16/2006CN1819239A Photodiode of cmos image sensor and method for manufacturing the same
08/16/2006CN1819238A Image sensor pixel having a transfer gate formed from Pp+ or N+ doped polysilicon
08/16/2006CN1819237A CMOS image sensor and method for fabricating the same
08/16/2006CN1819236A Method for fabricating vertical CMOS image sensor
08/16/2006CN1819235A CMOS image sensor and method for fabricating the same
08/16/2006CN1819234A CMOS image sensor and method of fabricating the same
08/16/2006CN1819233A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819232A CMOS image sensor and method for fabricating the same
08/16/2006CN1819231A Cmos图像传感器 Cmos image sensor
08/16/2006CN1819230A Solid-state image sensor, method of manufacturing the same, and camera
08/16/2006CN1819229A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819228A CMOS image sensor and method for fabricating the same
08/16/2006CN1819227A CMOS image sensor and method for fabricating the same
08/16/2006CN1819226A CMOS image sensor and method for fabricating the same
08/16/2006CN1819225A CMOS image sensor and method for fabricating the same
08/16/2006CN1819224A Photodiode in CMOS image sensor and fabricating method thereof
08/16/2006CN1819222A CMOS image sensor and method for manufacturing the same
08/16/2006CN1819221A CMOS image sensor and method for fabricating the same
08/16/2006CN1819220A CMOS image sensor and method for fabricating the same
08/16/2006CN1819219A Tft substrate and manufacturing method of the same
08/16/2006CN1819218A Semiconductor device and manufacturing method thereof
08/16/2006CN1819217A Active matrix substrate and its manufacturing method
08/16/2006CN1819216A Semiconductor device, method of manufacture thereof and semiconductor integrated circuit
08/16/2006CN1819215A Element formation substrate, method of manufacturing the same, and semiconductor device
08/16/2006CN1819212A Flash memory devices comprising pillar patterns and methods of fabricating the same
08/16/2006CN1819209A Semiconductor device including stacked capacitor
08/16/2006CN1819208A Semiconductor storage device
08/16/2006CN1819207A Semiconductor device and manufacturing method therefor
08/16/2006CN1819206A Memory device, method of improving memory retention thereof, and antihunt means thereof
08/16/2006CN1819205A Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array
08/16/2006CN1819204A Nonvolatile nanochannel memory device using mesoporous material
08/16/2006CN1819203A Semiconductor integrated circuit device and method of manufacturing the same
08/16/2006CN1819202A Insulated gate field-effect transistor and a method of manufacturing the same
08/16/2006CN1819201A Semiconductor structure having improved carrier mobility and method of manufacture.
08/16/2006CN1819200A Semiconductor device and method of manufacturing semiconductor device
08/16/2006CN1819199A Semiconductor product with semiconductor substrate and testing structure and method
08/16/2006CN1819198A Semiconductor device and fabricating method thereof
08/16/2006CN1819197A Semiconductor device tested using minimum pins and methods of testing the same
08/16/2006CN1819192A 半导体器件以及半导体封装 Semiconductor device and semiconductor package
08/16/2006CN1819189A Method for manufacturing circuit device
08/16/2006CN1819184A Devices comprising a power core and methods of making thereof
08/16/2006CN1819182A Structure and method for accurate deep trench resistance measurement
08/16/2006CN1819181A Semiconductor device and method for fabricating the same
08/16/2006CN1819180A Dielectric materialand method to make the same
08/16/2006CN1819179A Semiconductor device and method of manufacturing the same
08/16/2006CN1819178A Semiconductor device and method for production thereof
08/16/2006CN1819177A Metal interconnection of semiconductor device and forming method
08/16/2006CN1819172A Semiconductor device and manufacturing method therefor
08/16/2006CN1819171A Signal transfer film, display apparatus having the same and method of manufacturing the same
08/16/2006CN1819170A Packed module with positioning structure, electronic device and inspection after assembly
08/16/2006CN1819168A Semiconductor device and manufacturing process therefor
08/16/2006CN1819167A On-chip circuit pad structure and method of manufacture
08/16/2006CN1819163A Insulating sheet and method for producing it, and power module comprising the insulating sheet
08/16/2006CN1819161A Semiconductor device and manufacturing method thereof
08/16/2006CN1819160A A substrate having a built-in chip and external connection terminals on both sides and a method for manufacturing the same
08/16/2006CN1819159A Semiconductor wafer, semiconductor device manufacturing method, and semiconductor device
08/16/2006CN1819156A Method for fabricating capacitor of semiconductor memory device using amorphous carbon
08/16/2006CN1819155A Method of fabricating a semiconductor device capacitor and a semiconductor device capacitor
08/16/2006CN1819154A Production of dynamic random access memory
08/16/2006CN1819153A Method of manufacturing semiconductor device
08/16/2006CN1819152A Method of fabricating CMOS image sensor
08/16/2006CN1819151A Method for fabricating CMOS image sensor
08/16/2006CN1819150A Method for fabricating a CMOS image sensor
08/16/2006CN1819149A High voltage sensor device and method therefor
08/16/2006CN1819148A Method for fabricating CMOS image sensor
08/16/2006CN1819147A Method for manufacturing solid image forming device, solid image forming device and camera
08/16/2006CN1819146A Method for manufacturing active matrix substrate, active matrix substrate, electro-optical device and electronic apparatus
08/16/2006CN1819145A Device having dual etch stop liner and protective layer and related methods
08/16/2006CN1819144A Device having dual etch stop liner and reformed silicide layer and related methods
08/16/2006CN1819143A Method for fabricating CMOS image sensor
08/16/2006CN1819142A Method for fabricating cmos image sensor
08/16/2006CN1819141A Method for designing semiconductor device and method for evaluating reliability thereof
08/16/2006CN1819140A Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
08/16/2006CN1819139A Method of forming copper contact in semiconductor component
08/16/2006CN1819138A Manufacturing isolation layer in CMOS image sensor
08/16/2006CN1819137A Manufacture method for semiconductor device having field oxide film
08/16/2006CN1819136A Apparatus and method for aligning devices on carriers
08/16/2006CN1819135A Substrate processing apparatus
08/16/2006CN1819134A Method and apparatus for inspecting semiconductor wafer
08/16/2006CN1819133A Method of manufacturing semiconductor device and method of treating electrical connection section
08/16/2006CN1819132A Method for manufacturing circuit device
08/16/2006CN1819131A Method for producing a module including an integrated circuit on a substrate and an integrated module manufactured thereby
08/16/2006CN1819130A Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus
08/16/2006CN1819129A Semiconductor packer and production for godown chip
08/16/2006CN1819128A Method for manufacturing substrate with emergent points
08/16/2006CN1819127A Production and producer for cadmium sulfide
08/16/2006CN1819126A Method of manufacturing semiconductor device having side wall spacers
08/16/2006CN1819125A Production of thin-film transistor and liquid-crystal display devcie
08/16/2006CN1819124A Semiconductor device and fabrication method thereof
08/16/2006CN1819123A High-throughput HDP-CVD processes for advanced gapfill applications
08/16/2006CN1819122A Etching method, program, computer readable storage medium and plasma processing apparatus
08/16/2006CN1819121A Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
08/16/2006CN1819120A Method for decreasing granule amount of material layer with low dielectric constant
08/16/2006CN1819119A Silicon member and method of manufacturing the same
08/16/2006CN1819118A Single crystal wafer for semiconductor laser