H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2006
11/16/2006	DE102006021070A1 Semiconductor device, e.g. flash memory device, has parasitic transistor formed close to deep trench isolation structure, where doped polysilicon material fills cover section of structure to increase threshold voltage of transistor
11/16/2006	DE102006018899A1 Laser beam using machine tool for machining plate-shaped workpieces, which are held on clamping table, with machining along preset lines includes laser beam applicator
11/16/2006	DE102006018898A1 Method for laser machining forms impaired layer inside of workpiece by focused laser beam oscillated by beam oscillator via objective condensor lens, or collector lens
11/16/2006	DE102005056446A1 Dispersion, useful for coating substrates, which are useful for the production of solar cells, comprises silicon powders and liquid phase, where the silicon powder is present in the form of crystals
11/16/2006	DE102005040686A1 Connector for semiconductor chip and circuit board, has mesa contact and contact covering formed on contact area of semiconductor chip, in which mesa contact is formed in semiconductor chip position corresponding to contact area
11/16/2006	DE102005030064A1 Gate oxide film formation for use in high-voltage region of flash memory device, involves forming aluminum oxide layer on exposed formation region on substrate, and removing formed patterns on substrate and leaving only aluminum oxide layer
11/16/2006	DE102005030063A1 Semiconductor device fabrication method involves etching semiconductor substrate using patterned hard mask film as mask to form trenches, and forming isolation films with formed trenches
11/16/2006	DE102005028999A1 Flash memory device has control gates formed over interlayer dielectric film to surround top and sides of floating gates formed over tunnel dielectric film on semiconductor substrate
11/16/2006	DE102005028640A1 Verfahren zur Herstellung eines Transistors mit einem Dreifachkanal in einem Speicherbauelement A method of manufacturing a transistor with a triple channel in a memory device
11/16/2006	DE102005022490A1 Mounting band manufacturing method for connecting contact pads of chips and connecting contacts of printed circuit board, involves metallizing band, wall of vertical holes, and metal bushes, and removing polyester strips from band
11/16/2006	DE102005022391A1 Semiconductor component, e.g. power metal oxide semiconductor field effect transistor (MOSFET) includes insulator layer formed by laminating oxide layer and oxynitride layer
11/16/2006	DE102005022139A1 Sunk contact production method for solar cells involves placing electrically conductive material in ditch after formation of electrically non-conductive layer
11/16/2006	DE102005022129A1 Field effect transistor, e.g. complementary MOSFET, for system-on-chip circuit arrangement, has n-well region with doped region between drain and source regions such that region with resistance is formed between channel and doped regions
11/16/2006	DE102005021985A1 Sound generation and emission method for cleaning articles immersed in fluid involves generating signals that are modulated according to frequency or intensity
11/16/2006	DE102005021932A1 Verfahren zur Herstellung integrierter Schaltkreise A process for the production of integrated circuits
11/16/2006	DE102005006280B4 Halbleiterbauteil mit einem Durchkontakt durch eine Gehäusemasse und Verfahren zur Herstellung desselben Of the same semiconductor device having a via through a housing composition and methods for preparing
11/16/2006	DE102004034397B4 Bildsensormodul mit einem Waferebenenpaket Image sensor module with a wafer-level package
11/16/2006	DE102004015862B4 Verfahren zur Herstellung einer leitenden Barrierenschicht in kritischen Öffnungen mittels eines abschließenden Abscheideschritts nach einer Rück-Sputter-Abscheidung A method for producing a conductive barrier layer in critical openings by means of a final deposition step, after a return-sputter deposition
11/16/2006	DE102004015017B4 Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate Production of mechanical and electrical connections between the surfaces of two substrates
11/16/2006	DE10157223B4 Verfahren zur Herstellung eines Kontaktes bei einer Halbleitervorrichtung unter Verwendung einer Cluster-Vorrichtung mit zumindest einem Plasmavorbehandlungsmodul Process for the preparation of a contact in a semiconductor device using a cluster device with at least one plasma treatment module
11/16/2006	CA2606849A1 Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
11/16/2006	CA2606601A1 Ink jet application of carbon nanotubes
11/15/2006	EP1722450A1 Anamorphic solid state disk laser
11/15/2006	EP1722449A1 Anamorphic laser and use of the same
11/15/2006	EP1722423A2 Stable diodes for low and high frequency applications
11/15/2006	EP1722418A2 Semiconductor memory device
11/15/2006	EP1722410A1 Non-contact holding device, and non-contact holding and conveying device
11/15/2006	EP1722409A1 Wire loop, semiconductor device having same and wire bonding method
11/15/2006	EP1722408A1 Method of attaching a flip chip device and circuit assembly formed thereby
11/15/2006	EP1722406A1 Plasma processing method and computer storing medium
11/15/2006	EP1722405A1 Film-forming method
11/15/2006	EP1722404A2 Low work function metal alloy
11/15/2006	EP1722403A2 Fabrication method for a thin film smiconductor device
11/15/2006	EP1722402A2 Edge exposure apparatus, coating and developing apparatus, and edge exposure method
11/15/2006	EP1722271A2 Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof
11/15/2006	EP1722246A2 Method and apparatus for selectively compacting test responses
11/15/2006	EP1722213A1 Method for the quantification of hydrophilic properties of porous materials
11/15/2006	EP1721997A1 Ni-Pt ALLOY AND TARGET COMPRISING THE ALLOY
11/15/2006	EP1721866A1 MEMS device having a trilayered beam and related methods
11/15/2006	EP1721344A2 Method of manufacturing a superjunction device
11/15/2006	EP1721340A1 Light emitting device and fabrication method thereof
11/15/2006	EP1721336A2 Twin eeprom memory transistors with subsurface stepped floating gates
11/15/2006	EP1721335A2 Wafer scale die handling
11/15/2006	EP1721333A1 Method for improving the quality of a taken thin layer
11/15/2006	EP1721332A2 Die encapsulation using a porous carrier
11/15/2006	EP1721218A1 Method to determine the value of process parameters based on scatterometry data
11/15/2006	EP1721194A2 Metallic nano-optic lenses and beam shaping devices
11/15/2006	EP1721031A1 Reduction of carrot defects in silicon carbide epitaxy
11/15/2006	EP1668682A4 Growth of high-k dielectrics by atomic layer deposition
11/15/2006	EP1665363A4 Wafer-level moat structures
11/15/2006	EP1665346A4 Improved method of forming openings in an organic resin material
11/15/2006	EP1647054B1 Plasma processing apparatus
11/15/2006	EP1576649A4 Stackable layers containing encapsulated integrated circuit chips with one or more overlying interconnect layers and a method of making the same
11/15/2006	EP1573779A4 High pressure processing chamber for semiconductor substrate including flow enhancing features
11/15/2006	EP1569757A4 Apparatus for microdeposition of multiple fluid materials
11/15/2006	EP1558697B1 Fluorinated surfactants for buffered acid etch solutions
11/15/2006	EP1546026A4 Fabrication of 3d photopolymeric devices
11/15/2006	EP1535320A4 Atomic layer deposition of high k metal silicates
11/15/2006	EP1472732B1 Device for connecting an ic terminal to a reference potential
11/15/2006	EP1417712B1 Integrated arrays of modulators and lasers on electronics
11/15/2006	EP1415339B1 Method for the parallel production of an mos transistor and a bipolar transistor
11/15/2006	EP1374651B1 Encapsulation arrangement
11/15/2006	EP1360713A4 Light emitting semiconductor package
11/15/2006	EP1285222A4 Interferometric apparatus and method
11/15/2006	EP1282901B1 Lead zirconate titanate dielectric thin film composites on metallic foils
11/15/2006	EP1277073B1 Optical reduction system with control of illumination polarization
11/15/2006	EP1273033B1 Trihydroxybenzene composition for inhibition of titanium corrosion
11/15/2006	EP1234335B1 Method of manufacturing a semiconductor device using a halo implantation
11/15/2006	EP1224684B1 Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
11/15/2006	EP1205965B1 Use of cmp abrasive
11/15/2006	EP1190441B1 Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing
11/15/2006	EP1186024B1 Method for making a silicon substrate comprising a buried thin silicon oxide film
11/15/2006	EP1116261B1 Method and apparatus for cooling substrates
11/15/2006	EP1114455B1 Method for producing a storage cell
11/15/2006	EP1114444B1 Semiconductor processing method and gate stack
11/15/2006	EP1105605B1 Pod door to port door retention system
11/15/2006	EP1099012A4 Method and apparatus for copper plating using electroless plating and electroplating
11/15/2006	EP1068632B1 Contamination controlling method and plasma processing chamber
11/15/2006	EP0987750B1 Container
11/15/2006	EP0919822B1 System for verifying signal voltage level accuracy on a digital testing device
11/15/2006	EP0826152B1 Method and apparatus for testing semiconductor dice
11/15/2006	CN2838038Y Semiconductor encapsulant
11/15/2006	CN2838037Y Cleaning wafer for removing residue from support surface
11/15/2006	CN2837831Y Ultra-high vacuum in-situ growth, characterization and test system
11/15/2006	CN1864452A Electronic component mounting apparatus and electronic component mounting method
11/15/2006	CN1864275A Split poly-SiGe/poly-Si alloy gate stack
11/15/2006	CN1864271A Fowler-nordheim block alterable EEPROM memory cell
11/15/2006	CN1864270A Insulated-gate semiconductor device and its manufacturing method
11/15/2006	CN1864268A Heterjunction bipolar transistor with tunnelling mis emitter junction
11/15/2006	CN1864262A Electronically programmable antifuse and circuits made therewith
11/15/2006	CN1864260A Module integration integrated circuits
11/15/2006	CN1864258A Electrical circuit apparatus and methods for assembling same
11/15/2006	CN1864257A Etch back process using nitrous oxide
11/15/2006	CN1864256A Catastrophic transfer of thin film after co-implantation
11/15/2006	CN1864255A Electro-static chuck with non-sintered aln and a method of preparing the same
11/15/2006	CN1864254A Electronic device and its manufacturing method
11/15/2006	CN1864253A 非易失性存储装置 Nonvolatile memory device
11/15/2006	CN1864252A Composition for forming etching stopper layer
11/15/2006	CN1864251A Method of forming a low k dielectric in a semiconductor manufacturing process
11/15/2006	CN1864250A Method and apparatus for wafer cleaning

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