Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2007
08/16/2007US20070187142 Method for fabricating a through-hole interconnection substrate and a through-hole interconnection substrate
08/16/2007US20070187037 Semiconductor development apparatus and method using same
08/16/2007US20070186972 Plasma processing apparatus
08/16/2007US20070186970 Solar cell and method of fabricating the same
08/16/2007US20070186858 Susceptor
08/16/2007US20070186850 Substrate processing apparatus and substrate processing method
08/16/2007US20070186845 Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same
08/16/2007US20070186486 Polishing composition and rinse composition
08/16/2007US20070186485 Polishing composition and rinse composition
08/16/2007US20070186414 Multilayer wiring board incorporating carbon fibers and glass fibers
08/16/2007US20070186412 Method for Fabricating Circuit Board with Conductive Structure
08/16/2007DE202004021352U1 Leistungshalbleitervorrichtungen Power semiconductor devices
08/16/2007DE19935946B4 Verfahren zum Ausbilden einer dielektrischen Schicht A method of forming a dielectric layer
08/16/2007DE19928524B4 IC-Prüfgerät IC tester
08/16/2007DE19721322B4 Elektrostatische Entladungsschutzeinrichtung Electrostatic discharge protection device
08/16/2007DE19637497B4 Waferaufnahmevorrichtung, insbesondere zur Verwendung in einem vertikalen Diffusionsofen Wafer holding device, in particular for use in a vertical diffusion furnace
08/16/2007DE10350354B4 Orientierungs-unabhängige Oxidation von nitriertem Silizium Orientation independent oxidation of nitrided silicon
08/16/2007DE10349908B4 Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung Dual passivated power semiconductor device having a mesa edge structure and process for its preparation
08/16/2007DE10338422B4 Selektiver Plasmaätzprozess zur Aluminiumoxid-Strukturierung und dessen Verwendung Selective plasma etching of alumina structure and its use
08/16/2007DE10332573B4 Verfahren zum Erzeugen von Lotkontakten auf Bauelementen A method of generating components on Lotkontakten
08/16/2007DE10313255B4 Transfer-Kopf für eine Vorrichtung zum Transportieren von Bauelementen sowie Vorrichtung mit einem solchen Transferkopf Transfer head for a device for transporting devices and device with such a transfer head
08/16/2007DE10311312B4 Isolatorstruktur und Verfahren zur Erzeugung von Isolatorstrukturen in einem Halbleitersubstrat Insulator structure and method of producing insulator structures in a semiconductor substrate,
08/16/2007DE10244570B4 Liner-Schicht mit geringer Stufenüberdeckung zur Verbesserung des Kontaktwiderstands bei W-Kontakten Liner layer with low step coverage to improve the contact resistance at W contacts
08/16/2007DE10222958B4 Verfahren zur Herstellung eines organischen elektro-optischen Elements und organisches elektro-optisches Element A method of manufacturing an organic electro-optical element and an organic electro-optical element
08/16/2007DE102006029334A1 Material zum Ausbilden eines Belichtungslicht blockierenden Films, mehrschichtige Verbindungsstruktur und Herstellungsverfahren dafür, und Halbleitervorrichtung Material for forming an exposure light-blocking film, multilayer interconnection structure and manufacturing method therefor, and the semiconductor device
08/16/2007DE102006027657A1 Flüssigkristalldisplay und Verfahren zu dessen Herstellung Liquid crystal display and method for its production
08/16/2007DE102006024423A1 Structure producing method for multiple opto-electronic components, involves producing pressure between roller and auxiliary carrier by relative movement of roller relatively to auxiliary carrier
08/16/2007DE102006007267A1 Two-stage process to dope a semiconductor by atomization of alcoholized droplets followed by heating
08/16/2007DE102006007053A1 Optimierte Isolationsstruktur und Verfahren zu deren Herstellung Optimized isolation structure and methods for their preparation
08/16/2007DE102006007040A1 Bauelement mit integriertem Heizelement und Verfahren zum Beheizen eines Halbleiterkörpers Device with an integrated heating element and method for heating a semiconductor body
08/16/2007DE102006005994A1 Semiconductor component e.g. semiconductor chip useful in semiconductor wafer comprises semiconductor substrate having active area region, interspace between carrier and covering filled with underfiller material
08/16/2007DE102006005522A1 Elektrische Kontaktiervorrichtung sowie elektrisches Kontaktierverfahren The electrical contactor and electrical contacting method
08/16/2007DE102006005419A1 Semiconductor component for electronic device, includes walls with photolithographically patterned polymer, and cavity covering having polymer layer, where molecular chains of the polymers are crosslinked to form stable cavity housing
08/16/2007DE102006004870A1 Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur Semiconductor layer structure and process for producing a semiconductor layer structure
08/16/2007DE102006004796A1 BiCMOS component production method, involves masking emitter window of former bipolar element and base layer is illuminated in base zone of latter bipolar element with auxiliary emitter implant by associated emitter window
08/16/2007DE102006004595A1 Electrical characteristic calculation method for integrated electrical circuit, involves determining circuit part with larger contribution for electrical characteristics, and are considered as important parts for computing
08/16/2007DE102005056364B3 Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung Bipolar carrier wafer and mobile, bipolar electrostatic wafer assembly
08/16/2007DE102005035735B4 Verfahren und System zum Abschätzen eines Zustands einer nicht initialisierten fortschrittlichen Prozesssteuerung durch Anwendung unterteilter Steuerungsdaten A method and system for estimating a state of a non-initialized advanced process control by use of divided control data
08/16/2007DE102005013783B4 Verfahren zum Trennen von spröden Materialien mittels Laser mit unsymmetrischer Strahlungsdichteverteilung A method for separating brittle materials by means of laser radiation with asymmetrical density distribution
08/16/2007DE102005006639B4 Erzeugen von SiC-Packs auf Wafer-Ebene Generating SiC-packs at the wafer level
08/16/2007DE102004059616B4 Verfahren zum Reinigen einer Halbleitervorrichtungs-Herstellungsvorrichtung A method of cleaning a semiconductor device manufacturing apparatus
08/16/2007DE102004027356B4 Verfahren zur Herstellung eines integrierten Schaltkreises A process for producing an integrated circuit
08/16/2007DE10164305B4 Verfahren zum Ausbilden eines integrierten Halbleiterelements A method of forming an integrated semiconductor element
08/16/2007DE10146353B4 Verfahren zur Herstellung einer Lötperle und Lötperlenstruktur A method for preparing a solder bump and Lötperlenstruktur
08/16/2007DE10085092B4 Conditioner for a polishing pad used in chemical mechanical polishing used in the manufacturing of semiconductor devices, comprising a substrate with uniform geometric protrusions on one side covered by a diamond layer
08/16/2007DE10014915B4 Verfahren zum Freilegen einer Kontaktfläche A method for exposing a contact surface
08/16/2007DE10009876B4 Verfahren zum Bilden eines einkristallinen Films A method for forming a single-crystal film
08/16/2007CA2641563A1 Semiconductor production plant
08/15/2007EP1819202A2 Semiconductor device and manufacturing method thereof
08/15/2007EP1818989A2 Nonvolatile semiconductor storage device and manufacturing method thereof
08/15/2007EP1818987A1 Semi-conductor component assembly
08/15/2007EP1818985A1 Interconnection structure and manufacturing method
08/15/2007EP1818984A2 Semiconductor chip with multiple rows of bond pads
08/15/2007EP1818979A1 Electronic component and production method therefor
08/15/2007EP1818978A1 Semiconductor storage device and manufacturing method thereof
08/15/2007EP1818977A2 Lithographic projection apparatus and device manufacturing method
08/15/2007EP1818976A1 Process for transferring a thin layer formed in a substrate having crystal originated particles (COPs).
08/15/2007EP1818975A2 Multilayer printed circuit board and multilayer printed circuit board manufacturing method
08/15/2007EP1818974A2 Non-volatile memory cells and methods for fabricating the same
08/15/2007EP1818973A1 Formation of a monocrystalline semiconductor layer portion separated from a substrate
08/15/2007EP1818972A1 Device processing system, information display method, program, and recording medium
08/15/2007EP1818971A1 Method for manufacturing direct bond wafer, and direct bond wafer
08/15/2007EP1818900A2 Organic light emitting device and manufacturing method of the same
08/15/2007EP1818723A1 Composition for forming antireflection film, layered product, and method of forming resist pattern
08/15/2007EP1818429A2 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
08/15/2007EP1818351A1 Underfill encapsulant for wafer packaging and method for its application
08/15/2007EP1818312A1 METHOD FOR PRODUCING CeO2 FINE PARTICLES AND POLISHING SLURRY CONTAINING SUCH FINE PARTICLES
08/15/2007EP1817941A2 Compositions exhibiting inhibition of cyclooxygenase-2
08/15/2007EP1817801A1 A damascene copper wiring image sensor
08/15/2007EP1817798A2 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
08/15/2007EP1817797A2 Low turn-on voltage, non-electron blocking double hbt structure
08/15/2007EP1817795A1 Metallised film for sheet contacting
08/15/2007EP1817793A1 Methods for forming co-planar wafer-scale chip packages
08/15/2007EP1817792A2 Multiple mask and method for producing differently doped regions
08/15/2007EP1817791A1 Apparatus and method for wet treatment of wafers
08/15/2007EP1817544A2 Overlay measurement target
08/15/2007EP1817500A2 Fore-line preconditioning for vacuum pumps
08/15/2007EP1817445A1 Method for making a dismountable substrate
08/15/2007EP1817443A2 Membrane-limited selective electroplating of a conductive surface
08/15/2007EP1817440A1 Method and device for the deposition of gallium nitrite layers on a sapphire substrate and associated substrate holder
08/15/2007EP1719161A4 Polishing apparatus and substrate processing apparatus
08/15/2007EP1537585A4 Memory cell
08/15/2007EP1537258B1 Method of fabricating substrates, in particular for optics, electronics or optoelectronics----------------------------------------
08/15/2007EP1516031B1 Heat curable adhesive composition, article, semiconductor apparatus and method
08/15/2007EP1466357A4 Surface mounted package with die bottom spaced from support board
08/15/2007EP1441392B1 Magnetic memory device
08/15/2007EP1425432A4 Atmospheric pressure wafer processing reactor having an internal pressure control system and method
08/15/2007EP1399306B1 Method and device for cutting a single crystal
08/15/2007EP1350321B1 Method and system for efficient and accurate filtering and interpolation
08/15/2007EP1348236B1 Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering
08/15/2007EP1309976A4 Photolithographically-patterned out-of-plane coil structures
08/15/2007EP1276356B1 Apparatus for plasma processing
08/15/2007EP1226286A4 Apparatus for atomic layer chemical vapor deposition
08/15/2007EP1166323B1 Method and apparatus for compensating non-uniform wafer processing in plasma processing
08/15/2007EP1142012A4 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
08/15/2007EP1125321B1 Chemical deposition reactor and method of forming a thin film using the same
08/15/2007EP1053567B1 Lateral thin-film silicon-on-insulator (soi) jfet device
08/15/2007EP0922198A4 Method and device for measuring the concentration of ions implanted in semiconductor materials
08/15/2007EP0889510B1 Method and device for heat-treating single-crystal silicon wafer, single-crystal silicon wafer, and process for producing single-crystal silicon wafer
08/15/2007CN2935709Y High voltage automatic discharge device for ion implantation apparatus