Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2007
10/25/2007WO2007119554A1 Method for producing polymer, polymer, composition for forming polymer film, method for forming polymer film, and polymer film
10/25/2007WO2007119537A1 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing
10/25/2007WO2007119530A1 Tray stack transfer apparatus
10/25/2007WO2007119514A1 Illuminating optical apparatus, exposure apparatus and device manufacturing method
10/25/2007WO2007119507A1 Sheet for forming protection film for chip
10/25/2007WO2007119501A1 Exposure apparatus, exposure method and device manufacturing method
10/25/2007WO2007119475A1 Disc master exposure device and method for adjusting same
10/25/2007WO2007119466A1 Exposure device, device-manufacturing method, and exposing method
10/25/2007WO2007119446A1 Mram and mram data reading/writing method
10/25/2007WO2007119442A1 Organic transistor improved in charge mobility and its manufacturing method
10/25/2007WO2007119441A1 Power ic device and method for manufacturing same
10/25/2007WO2007119433A1 Group iii-v nitride layer and method for producing the same
10/25/2007WO2007119391A1 Actinic energy radiation negative-working photoresist composition and cured product thereof
10/25/2007WO2007119389A1 Semiconductor device
10/25/2007WO2007119384A1 Negative-type photosensitive fluorinated aromatic resin composition
10/25/2007WO2007119359A1 Wafer-shaped measuring apparatus and method for manufacturing same
10/25/2007WO2007119321A2 Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
10/25/2007WO2007119319A1 Gallium nitride material and method for producing same
10/25/2007WO2007119292A1 Reflective, refractive and projecting optical system; reflective, refractive and projecting device; scanning exposure device; and method of manufacturing micro device
10/25/2007WO2007119278A1 Semiconductor device
10/25/2007WO2007118755A1 Micromechanical component with wafer through-plating and corresponding production method
10/25/2007WO2007118730A1 Method and device for no-contact temperature measurement
10/25/2007WO2007118511A1 Method and device for placing electronic components, especially semiconductor chips, on a substrate
10/25/2007WO2007118376A1 Dual stage switching positioning system for step and scan lithography machine
10/25/2007WO2007100544A3 Highly selective doped oxide etchant
10/25/2007WO2007095916A3 Device for aligning and machining a wafer
10/25/2007WO2007085834A3 Etch stop structure
10/25/2007WO2007072247A3 An improved lift-off technique suitable for nanometer-scale patterning of metal layers
10/25/2007WO2007053016A3 Surface and method for the manufacture of photovolataic cells using a diffusion process
10/25/2007WO2007044542A3 Method of reducing edge height at the overlap of a layer deposited on a stepped substrate
10/25/2007WO2006134233A9 Method for manufacturing a micromechanical motion sensor, and a micromechanical motion sensor
10/25/2007WO2006132822A3 Method for making electronic devices
10/25/2007WO2006096418A3 Plating of a thin metal seed layer
10/25/2007WO2005081289A3 Process and apparatus for removing residues from semiconductor substrates
10/25/2007WO2002084720A3 Exposure device and substrate processing system and device producing method
10/25/2007US20070250290 Scanning exposure technique
10/25/2007US20070250284 Semiconductor integrated circuit and testing method for the same
10/25/2007US20070249748 Copolymer of (meth)acrylic acid with ethylenically unsaturated compounds, 1-[4-morpholinophenyl]-2-dialkylamino-2-(4-alkylbenzyl)-alkane-1-one photoinitiator, and a polyol that is partially or fully esterified with an ethylenically unsaturated carboxylic acid
10/25/2007US20070249182 ETCHING OF SiO2 WITH HIGH SELECTIVITY TO Si3N4 AND ETCHING METAL OXIDES WITH HIGH SELECTIVITY TO SiO2 AT ELEVATED TEMPERATURES WITH BCl3 BASED ETCH CHEMISTRIES
10/25/2007US20070249181 Process using a broken gelled composition
10/25/2007US20070249180 Method of making a molecule-surface interface
10/25/2007US20070249179 Method of forming a low-k dielectric layer with improved damage resistance and chemical integrity
10/25/2007US20070249178 Semiconductor device, manufacturing method of semconductor device, manufacturing equipment of semiconductor device, light emitting diode head, and image forming apparatus
10/25/2007US20070249177 Method for Hard Mask CD Trim
10/25/2007US20070249176 Active device array substrate and fabricating method thereof
10/25/2007US20070249175 Pitch-shrinking technologies for lithographic application
10/25/2007US20070249174 Patterning sub-lithographic features with variable widths
10/25/2007US20070249173 Plasma etch process using etch uniformity control by using compositionally independent gas feed
10/25/2007US20070249172 Method for removing masking materials with reduced low-k dielectric material damage
10/25/2007US20070249171 Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
10/25/2007US20070249170 Process for improving critical dimension uniformity of integrated circuit arrays
10/25/2007US20070249169 Mask and method of manufacturing liquid crystal display device using the same
10/25/2007US20070249168 Crystallographic preferential etch to define a recessed-region for epitaxial growth
10/25/2007US20070249167 CMP method for copper-containing substrates
10/25/2007US20070249166 Method for fabricating a semiconductor component including a high capacitance per unit area capacitor
10/25/2007US20070249165 Dual damascene process
10/25/2007US20070249164 Method of fabricating an interconnect structure
10/25/2007US20070249163 Semiconductor device and method of manufacturing the same
10/25/2007US20070249162 Semiconductor device
10/25/2007US20070249161 Anisotropic conductive sheet and method of manufacturing the same
10/25/2007US20070249160 Process of forming an electronic device including a layer formed using an inductively coupled plasma
10/25/2007US20070249159 Method for forming dielectric film to improve adhesion of low-k film
10/25/2007US20070249158 Semiconductor device and manufacturing method thereof
10/25/2007US20070249157 Semiconductor device and method for manufacturing same
10/25/2007US20070249156 Method for enabling hard mask free integration of ultra low-k materials and structures produced thereby
10/25/2007US20070249155 Method to manufacture a coreless packaging substrate
10/25/2007US20070249154 Method to manufacture a coreless packaging substrate
10/25/2007US20070249153 Chip structure with half-tunneling electrical contact to have one electrical contact formed on inactive side thereof and method for producing the same
10/25/2007US20070249152 Method of manufacturing semiconductor apparatus
10/25/2007US20070249151 Method of manufacturing semiconductor device and semiconductor device
10/25/2007US20070249150 Method of Forming a Metal Line and Method of Manufacturing a Display Substrate by Using the Same
10/25/2007US20070249149 Improved thermal budget using nickel based silicides for enhanced semiconductor device performance
10/25/2007US20070249148 Method for producing a layer consisting of a doped semiconductor material
10/25/2007US20070249147 Process and system for laser annealing and laser-annealed semiconductor film
10/25/2007US20070249146 Protective tape applying method
10/25/2007US20070249145 Method of dividing an adhesive film bonded to a wafer
10/25/2007US20070249144 Method of forming silicon-on-insulator wafer having reentrant shape dielectric trenches
10/25/2007US20070249143 Method and device of manufacturing thin substrate
10/25/2007US20070249142 Semiconductor devices and method of manufacturing them
10/25/2007US20070249141 Method of manufacturing electrode pattern
10/25/2007US20070249140 Method for the production of thin substrates
10/25/2007US20070249139 Semiconductor on glass insulator made using improved thinning process
10/25/2007US20070249138 Buried dielectric slab structure for CMOS imager
10/25/2007US20070249137 Method and system for wafer backside alignment
10/25/2007US20070249136 Silicon structures with improved resistance to radiation events
10/25/2007US20070249135 Collector tailored structures for integration of binary junction transistors
10/25/2007US20070249134 Method and apparatus for irradiating laser
10/25/2007US20070249133 Conductive spacers for semiconductor devices and methods of forming
10/25/2007US20070249132 Semiconductor device with fixed channel ions
10/25/2007US20070249131 Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
10/25/2007US20070249130 Finfet/trigate stress-memorization method
10/25/2007US20070249129 STI stressor integration for minimal phosphoric exposure and divot-free topography
10/25/2007US20070249128 Ultraviolet (UV) Radiation Treatment Methods for Subatmospheric Chemical Vapor Deposition (SACVD) of Ozone-Tetraethoxysilane (O3-TEOS)
10/25/2007US20070249127 Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same
10/25/2007US20070249126 A structure and method for fabrication of deep junction silicon-on-insulator transistors
10/25/2007US20070249125 Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the same
10/25/2007US20070249124 DMOS device of small dimensions and manufacturing process thereof
10/25/2007US20070249123 Method of fabricating a recess channel transistor
10/25/2007US20070249122 Array substrate for liquid crystal display device using organic semiconductor material and method of fabricating the same
10/25/2007US20070249121 Method of fabricating non-volatile memory