Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2007
10/31/2007EP1850396A2 Semiconductor device and manufacturing method thereof
10/31/2007EP1850395A2 Semiconductor device and manufacturing method thereof
10/31/2007EP1850386A1 Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device
10/31/2007EP1850382A2 Modular display device and organic thin-film transistor
10/31/2007EP1850378A2 Memory device and semicondutor device
10/31/2007EP1850377A1 Method for manufacturing simox wafer and simox wafer obtained by this method
10/31/2007EP1850376A2 Electrostatic chuck
10/31/2007EP1850375A1 Semiconductor wafer surface protecting sheet and semiconductor wafer protecting method using such protecting sheet
10/31/2007EP1850374A2 Semiconductor device and manufacturing method thereof
10/31/2007EP1850373A2 Method of forming highly orientated silicon film, method of manufacturing three-dimensional semiconductor device, and three-dimensional semiconductor device
10/31/2007EP1850372A1 Temperature setting method for heat treating plate, temperature setting device for heat treating plate, program and computer-readable recording medium recording program
10/31/2007EP1850371A1 Exposure method, exposure apparatus and method for manufacturing device
10/31/2007EP1850370A1 Stage apparatus and exposure apparatus
10/31/2007EP1850369A1 Manufacturing process of an organic mask for microelectronic industry
10/31/2007EP1850181A1 Lithographic projection apparatus and device manufacturing method
10/31/2007EP1850180A1 Composition for forming of underlayer film for lithography that contains compound having protected carboxyl
10/31/2007EP1850179A1 Semiconductor substrate for improving pattern formation in photolithographic process
10/31/2007EP1850176A2 Pattern Defect Inspection Method, Photomask Manufacturing Method, and Display Device Substrate Manufacturing Method
10/31/2007EP1849867A1 Preparation of antibody using mrl/lpr mouse
10/31/2007EP1849191A2 Optoelectronic architecture having compound conducting substrate
10/31/2007EP1849187A2 Wiring patterns formed by selective metal plating
10/31/2007EP1849185A1 Flexible active matrix display backplane and method
10/31/2007EP1849184A2 PRODUCING SiC PACKS ON A WAFER PLANE
10/31/2007EP1849183A2 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
10/31/2007EP1849182A1 Semiconductor oxidation apparatus and method of producing semiconductor element
10/31/2007EP1849167A2 Thin film resistors with current density enhancing layer (cdel)
10/31/2007EP1848597A2 Methods for silicon electrode assembly etch rate and etch uniformity recovery
10/31/2007EP1848551A2 Enhanced wafer cleaning method
10/31/2007EP1848550A2 Etchant treatment processes for substrate surfaces and chamber surfaces
10/31/2007EP1683198B1 Semiconductor device and manufacturing method thereof
10/31/2007EP1665337A4 Doped alloys for electrical interconnects, methods of production and uses thereof
10/31/2007EP1649513A4 SEMI-INSULATING GaN AND METHOD OF MAKING THE SAME
10/31/2007EP1641597A4 Substrate polishing apparatus
10/31/2007EP1595275A4 Interconnect structures incorporating low-k dielectric barrier films
10/31/2007EP1573771A4 System and method for removal of materials from an article
10/31/2007EP1459376A4 Method and structure for a heterojunction bipolar transistor
10/31/2007EP1414722A4 Reticle protection and transport
10/31/2007EP1406823A4 300mm single stackable film frame carrier
10/31/2007EP1384255B1 Method for grinding the back sides of wafers
10/31/2007EP1305813A4 Plasma focus light source with active and buffer gas control
10/31/2007EP1290452B1 Self teaching robotic carrier handling system
10/31/2007EP1082882B1 Method of manufacturing resistors
10/31/2007DE60033643T2 Spannungsarme chipanbringung Low-stress die attach
10/31/2007DE112005003233T5 Verfahren zur Herstellung eines epitaktischen Silizium-Wafers A method for producing an epitaxial silicon wafer
10/31/2007DE112004003021T5 Halbleiterspeicher und Verfahren zu dessen Herstellung A semiconductor memory and method for its production
10/31/2007DE10325020B4 Verfahren zum Versiegeln eines Halbleiterbauelements und damit hergestellte Vorrichtung A method of sealing a semiconductor device and device made therewith
10/31/2007DE10238587B4 Verfahren zur Herstellung einer Verbundvorrichtung A process for manufacturing a composite device
10/31/2007DE102007020903A1 Integrated semiconductor fuse component for e.g. programmable read only memory, has conducting layer formed on polysilicon layer with small thickness in part of its extension on connection path than in another part of its extension on path
10/31/2007DE102007019568A1 Leitkugel-Anordnungsvorrichtung Leitkugel placement device
10/31/2007DE102007018304A1 Verfahren zur Behandlung mit ultravioletter (UV) Strahlung für unteratmosphärisches-chemisches Gasphasenabscheiden (SACVD) von Ozon-Tetra-Ethyl-Ortho-Silikat (O3-TEOS) A method of treating with ultraviolet (UV) radiation for subatmospheric-chemical vapor deposition (SACVD) of ozone-tetra-ethyl-ortho-silicate (O3-TEOS)
10/31/2007DE102007016085A1 Silicon carbide semiconductor device producing method, involves forming carbon layer on semiconductor layer, and heating semiconductor layer for activation of implanted impurity in semiconductor layer, where carbon layer is utilized as mask
10/31/2007DE102007012334A1 Hard masking layer stack for use in semiconductor memory device, has carbon layer arranged on layer to be structured, and covering layer arranged on intermediate layer, where intermediate layer is thicker than covering layer
10/31/2007DE102006057773A1 Matrixsubstrat für eine Flüssigkristallanzeigevorrichtung und Verfahren zu dessen Herstellung Matrix substrate for a liquid crystal display device and process for its preparation
10/31/2007DE102006034847A1 Opto-electronic semiconductor chip e.g. light emitting diode chip, has contact layer, where electrical contact resistance of contact layer to connection layer is smaller than contact layer to barrier layer
10/31/2007DE102006019936A1 Field-effect transistor manufacturing method, involves implementing preamorphization processes at drain and source regions in p-channel transistor and/or n-channel transistor in component area
10/31/2007DE102006019935A1 Integrated circuit e.g. silicon on insulator transistor, manufacturing method, involves providing non-doping atomic group e.g. fluorine, in drain and source areas in body area, where atomic group provides increased leakage current path
10/31/2007DE102006019881A1 Production of silicon nitride layer with high intrinsic compressive bracing, comprises forming transistor element on substrate with gate electrode structure, and forming silicon nitride materials in the proximity to the gate electrode
10/31/2007DE102006019836A1 Semiconductor component e.g. field-effect transistor, producing method, involves forming endowed region in semiconductor region, covering semiconductor region by dielectric layer, and forming victim coating on semiconductor region
10/31/2007DE102006019461A1 Ätzverfahren zum Materialabtrag an Festkörpern und dessen Verwendung sowie Vorrichtung hierzu Etching process for removing material from solids and its use, and apparatus therefor
10/31/2007DE102006018276A1 Sample body polishing finishing method, involves monitoring polishing of body by temporally disintegrated measuring of actual force exerted on body, and completing polishing when actual strength strongly varies from given default value
10/31/2007DE102006017892A1 Body temperature measuring method for use during thermal process, involves subjecting body to radiation by electrically heated radiant emitter, and compensating error through additional measurement of electrical characteristics of emitter
10/31/2007DE102004015864B4 Verfahren zum Ausbilden von Seitenwandabstandhaltern A method of forming sidewall spacers
10/31/2007DE10162796B4 Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie photolithographisches Fertigungsverfahren Method for optimizing imaging properties of at least two of the optical elements as well as photolithographic manufacturing process
10/31/2007CN200969345Y silicon chip station capable of preventing production of air bubble when pasting film
10/31/2007CN200969344Y Wafer box and its wafer fastener
10/31/2007CN200968775Y Crystal furnace with water jacket
10/31/2007CN200967836Y Silicon carbide soft landing loader
10/31/2007CN101066003A Printed board and designing method therefor and ic package terminal designing method and connecting method therefor
10/31/2007CN101065852A Method for producing a thin-film semiconductor chip
10/31/2007CN101065847A Silicon carbide mos field-effect transistor and process for producing the same
10/31/2007CN101065843A Method for manufacturing an electronics module
10/31/2007CN101065841A Semiconductor device for radio and method of power supply for circuit block thereof
10/31/2007CN101065840A Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers
10/31/2007CN101065839A Processing device of fragile member
10/31/2007CN101065838A Au bonding wire for semiconductor device
10/31/2007CN101065837A Aqueous solution for removing post-etch residue
10/31/2007CN101065836A Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium
10/31/2007CN101065835A Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
10/31/2007CN101065834A Low temperature process to produce low-k dielectrics with low stress by plasma-enhanced chemical vapor deposition(pecvd)
10/31/2007CN101065833A Ashing method and ashing apparatus
10/31/2007CN101065832A Method and apparatus for cleaning semiconductor substrates
10/31/2007CN101065831A Nanostructure and method of manufacture
10/31/2007CN101065830A Method of modifying surface area and electronic device
10/31/2007CN101065829A Autofocus for high power laser diode based annealing system
10/31/2007CN101065828A Apparatus method for wet treatment of wafers
10/31/2007CN101065827A Multiple shadow mask structure for deposition shadow mask protection and method of making and using same
10/31/2007CN101065826A Method and apparatus having wafer level chip scale package for sensing elements
10/31/2007CN101065811A Method of fabricating a tunneling nanotube field effect transistor
10/31/2007CN101065708A Method for forming photoresist pattern using double layer antireflection film
10/31/2007CN101065694A Single axis light pipe for homogenizing one axis of illumination system based on laser diodes
10/31/2007CN101065520A Membrane-limited selective electroplating of a conductive surface
10/31/2007CN101065513A Gas distribution system for improved transient vapor phase deposition
10/31/2007CN101065458A Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
10/31/2007CN101065457A Chemical mechanical polishing method and polishing composition
10/31/2007CN101065349A Alkoxide compound, thin film-forming material and method for forming thin film
10/31/2007CN101065226A Mold for optically hardening resin molding, and manufacturing method of hardened article using the mold
10/31/2007CN101064987A Plasma processing apparatus and apparatus for supplying RF power
10/31/2007CN101064986A Inductively coupled plasma reactor with multiple magnetic cores
10/31/2007CN101064763A Image sensor and manufacturing method thereof
10/31/2007CN101064411A Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector
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