Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2007
12/27/2007US20070295371 Single wafer dryer and drying methods
12/27/2007US20070295357 Removing metal using an oxidizing chemistry
12/27/2007US20070295355 Apparatus and method for cleaning substrate
12/27/2007US20070295273 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
12/27/2007US20070295272 Methods to improve the in-film defectivity of pecvd amorphous carbon films
12/27/2007US20070295265 Method for Producing Silicon Wafer and Silicon Wafer
12/27/2007US20070295063 Apparatus for manufacturing a semiconductor and a method for measuring the quality of a slurry
12/27/2007US20070294889 Electronic circuit module and method for its assembly
12/27/2007US20070294871 Capacitor and Method of Manufacturing a Capacitor
12/27/2007US20070294870 Multi-stage flow control apparatus and method of use
12/27/2007DE4425389B4 Gleichrichteranordnung sowie Verfahren zur Herstellung einer elektrisch und thermisch leitenden Verbindung und Anordnung zur Durchführung des Verfahrens Rectifier arrangement and methods for making an electrically and thermally conductive connection and arrangement for performing the method
12/27/2007DE202007014910U1 Packungsaufbau eines LED-Chips mit hoher Lichtausbeute in seitlicher Richtung Package structure of an LED chip with high light output in the lateral direction
12/27/2007DE19943114B4 Verfahren zur Herstellung eines MOS-Transistors A process for producing a MOS transistor
12/27/2007DE19938209B4 Halbleiteranordnung und Verfahren zur Herstellung A semiconductor device and method for producing
12/27/2007DE19930586B4 Nichtflüchtige Speicherzelle mit separatem Tunnelfenster Non-volatile memory cell with a separate tunnel window
12/27/2007DE19928547B4 Verfahren zur Herstellung eines Drucksensors A process for producing a pressure sensor
12/27/2007DE19928280B4 Ferroelektrischer Kondensator und Verfahren zur Herstellung desselben A ferroelectric capacitor and method for manufacturing the same
12/27/2007DE19755675B4 Halbleitergehäuse und Verfahren zu dessen Herstellung Semiconductor package and method for its production
12/27/2007DE112005003399T5 Positivresist-Zusammensetzung und Verfahren zur Erzeugung eines Resistmusters Positive resist composition and method for producing a resist pattern
12/27/2007DE112005002334T5 Niedrig-K dielelektrische Schicht gebildet aus Vorläufern eines Aluminiumsilikats Low-K dielelektrische layer formed from precursors of an aluminum silicate
12/27/2007DE10352606B4 Plasmabehandlungsvorrichtung Plasma treatment apparatus
12/27/2007DE10346581B4 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
12/27/2007DE10345520B4 Verfahren zum Betrieb einer Charge-Trapping-Speicherzelle Method of operating a charge-trapping memory cell
12/27/2007DE10341359B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
12/27/2007DE10337561B4 Herstellungsverfahren für ein DRAM mit verbessertem Leckstromverhalten Manufacturing method for a DRAM having an improved leakage current behavior
12/27/2007DE10303738B4 Speicherkondensator und Speicherzellenanordnung Storage capacitor and memory cell array
12/27/2007DE10255520B4 Verfahren zur elektrischen Kontaktierung mittels gefüllter Flüssigkeiten und elektronische Bauteile mit derartiger Kontaktierung Method for making electrical contact means filled with liquids and electronic components such contact
12/27/2007DE10210434B4 Verfahren zum Erzeugen einer Shallow-Trench-Isolation in einem Halbleiterbaustein und Verwendung eines solchen Verfahrens A method of producing a shallow trench isolation in a semiconductor device and use of such a method
12/27/2007DE102007027378A1 Connection arrangement, has galvanically applied metallic layer extending between main surfaces and electrically connecting main surfaces, and spacer unit arranged in recess to space main surface from another main surface
12/27/2007DE102006049211A1 Lifetime prediction method for semiconductor device, involves connecting lifetime prediction wire with wire bonding contact surface of semiconductor device at common junction, and determining electric current flows or not
12/27/2007DE102006040960A1 Flip-chip-component for multichip-module, has contact recess and elevation provided at position of interlayer connection to upper surfaces of substrate so that connection is electrically or externally contactable by recess and elevation
12/27/2007DE102006032431A1 Detection of mechanical defects in a boule composed of mono-crystalline semiconductor material, comprises scanning an even surface of the boule by an ultrasound head and determining the positions of the mechanical defects in the boule
12/27/2007DE102006029250A1 Verfahren zur Herstellung eines Transponders A process for producing a transponder
12/27/2007DE102006028954A1 Speichereinrichtung und Verfahren zur Herstellung einer Speichereinrichtung Storage device and method of manufacturing a memory device
12/27/2007DE102006028921A1 Verfahren zur Herstellung eines Siliziumsubstrats mit veränderten Oberflächeneigenschaften sowie ein derartiges Siliziumsubstrat A process for producing a silicon substrate with altered surface properties, and such a silicon substrate
12/27/2007DE102006028811A1 Method for applying solder on interconnecting lines, involves applying covering material on solder pad, where covering material prevents passivation of interconnecting line, which is carried by formation of solder resistance of surface
12/27/2007DE102006028809A1 Wafer-Träger-Anordnung, Schichtverbund zur Verwendung bei der Herstellung einer solchen Wafer-Träger-Anordnung sowie entsprechende Verfahren und Verwendungen The wafer carrier assembly layer composite for use in the production of such a wafer support assembly as well as corresponding methods and uses
12/27/2007DE102006028718A1 Singulation of semiconductor wafers to form semiconductor chips, by inducing crystallographic strains into region of separating tracks using ion implantation of charged particles, and laser ablating along separating tracks
12/27/2007DE102006027292A1 Verfahren zur Herstellung einer strukturierten Schichtfolge auf einem Substrat A method for producing a structured layer sequence on a substrate
12/27/2007DE102006027291A1 Verfahren zur Herstellung einer strukturierten Schichtenfolge auf einem Substrat A method for producing a structured layer sequence on a substrate
12/27/2007DE102006026941B3 Speicherzellenfeld mit nichtflüchtigen Speicherzellen und Verfahren zu dessen Herstellung Memory cell array having nonvolatile memory cells and methods for its preparation
12/27/2007DE102006015131B4 Halbleiterstruktur mit Sinker-Kontakt und Verfahren zu deren Herstellung Semiconductor structure having sinker contact and procedures for their preparation
12/27/2007DE102006013210B3 Semiconductor units manufacturing method, involves applying conductive film on two gate oxides and structuring at gate electrodes such that regions of gate oxides are not covered by conductive film
12/27/2007DE102005046711B4 Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten Method for manufacturing a vertical MOS semiconductor device having a thin dielectric layer and profound vertical sections
12/27/2007DE102005023670B4 Verfahren zum Ausbilden von Metall-Nitrid-Schichten in Kontaktöffnungen und integrierte Schaltung mit derart ausgebildeten Schichten A method of forming metal nitride layers in the contact openings and integrated circuit thus formed layers
12/27/2007DE102005010513B4 Herstellungsverfahren für eine Koaxialleiteranordnung Manufacturing method of a coaxial conductor arrangement
12/27/2007DE102005008354B4 Halbleiterbauteil sowie Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
12/27/2007DE102004057235B4 Vertikaler Trenchtransistor und Verfahren zu dessen Herstellung Vertical trench transistor and method of producing the
12/27/2007DE102004031710B4 Verfahren zum Herstellen unterschiedlich verformter Halbleitergebiete und Transistorpaar in unterschiedlich verformten Halbleitergebieten A method for producing differently deformed semiconductor regions and transistor pair in different strained semiconductor regions
12/27/2007DE102004023985B4 Verfahren zum Herstellen einer Wortleitung eines Speicherbausteins und Verwendung des Verfahrens zur Herstellung eines FIN-FET Transistors A method of manufacturing a word line of a memory chip and using the method of manufacturing a fin-FET transistor
12/27/2007DE102004014965B4 Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle A method of manufacturing a non-volatile memory cell
12/27/2007DE10164176B4 Bipolartransistor Bipolar transistor
12/27/2007DE10134181B4 Verfahren zur Herstellung eines p-leitenden Nitrid-Halbleiters A method for producing a p-type nitride semiconductor
12/27/2007DE10133719B4 Organisches Antireflex-Beschichtungspolymer, Antireflex-Beschichtungszusammensetzung und Verfahren zur Herstellung derselben Organic antireflection coating polymer, anti-reflective coating composition and method of manufacturing the same
12/27/2007DE10133718B4 Organische Antireflex-Beschichtungspolymere, solche Polymere umfassende Antireflex-Beschichtungszusammensetzungen und Verfahren zur Herstellung derselben Organic anti-reflective coating polymers, such polymers comprising anti-reflective coating compositions and methods for producing the same
12/27/2007DE10133716B4 Organische Antireflex-Beschichtungspolymere, solche Polymere umfassende Antireflex-Beschichtungszusammensetzungen und Verfahren zur Herstellung derselben Organic anti-reflective coating polymers, such polymers comprising anti-reflective coating compositions and methods for producing the same
12/27/2007DE10133715B4 Organisches Antireflex-Beschichtungspolymer, eine ein solches Polymer umfassende Antireflex-Beschichtungszusammensetzung und Verfahren zur Herstellung derselben Organic antireflection coating polymer, such a polymer comprising a bottom anti-reflective coating composition and method for producing the same
12/27/2007DE10047659B4 Epitaktische GaInP-Stapelstruktur und Herstellungsverfahren dafür sowie FET-Transistor unter Verwendung dieser Struktur GaInP epitaxial stacked structure and manufacture method therefor as well as FET transistor using this structure
12/26/2007EP1870943A2 An oxide-based method of making compound semiconductor films and making related electronic devices
12/26/2007EP1870935A2 A stacked non-volatile memory device and methods for fabricating the same
12/26/2007EP1870932A1 Stackable integrated circuit package and stacked package formed therefrom
12/26/2007EP1870931A2 Organic light emitting diode display and method for manufacturing the same
12/26/2007EP1870930A2 Method of producing bonded wafer
12/26/2007EP1870929A2 Manufacturing method for a leadless multi-chip electronic module
12/26/2007EP1870928A1 Polishing composition
12/26/2007EP1870927A1 Method of manufacturing a semiconductor device
12/26/2007EP1870926A1 Film adhesion device and film adhesion method
12/26/2007EP1870902A2 Semiconductor memory device and storage method thereof
12/26/2007EP1870772A2 Lithographic apparatus and device manufacturing method
12/26/2007EP1869717A1 Production method of group iii nitride semioconductor element
12/26/2007EP1869713A1 Split gate multi-bit memory cell
12/26/2007EP1869712A1 Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels
12/26/2007EP1869711A2 Production of vdmos-transistors having optimised gate contact
12/26/2007EP1869709A2 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications
12/26/2007EP1869708A2 Interlayer dielectric under stress for an integrated circuit
12/26/2007EP1869702A2 Metal-insulator-metal capacitor manufactured using etchback
12/26/2007EP1869701A2 Method and device for transferring a chip to a contact substrate
12/26/2007EP1869700A2 Interconnect structure and method of fabrication of same
12/26/2007EP1869699A1 Leadframe, coining tool, and method
12/26/2007EP1869698A2 Manufacturing ccds in a conventional cmos process
12/26/2007EP1869697A1 Method for removing particles from a semiconductor surface
12/26/2007EP1869696A2 Process for the formation of miniaturized getter deposits and getterdeposits so obtained
12/26/2007EP1868951A1 Holder made from quartz glass for the processing of semiconductor wafers and method for production of the holder
12/26/2007EP1561222A4 A combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
12/26/2007EP1497375B1 Polysulfone compositions exhibiting very low color and high light transmittance properties and articles made therefrom
12/26/2007EP1483349B1 Anionic abrasive particles treated with positively-charged polyelectrolytes for cmp
12/26/2007EP1451413A4 Real-time component monitoring and replenishment system for multicomponent fluids
12/26/2007EP1396914B1 Multi-beam semiconductor laser element
12/26/2007EP1340247A4 Method of forming dielectric films
12/26/2007EP1339625B1 Throughput enhancement for single wafer reactor
12/26/2007EP1297535B1 Reference cell for high speed sensing in non-volatile memories
12/26/2007EP1245045B1 A method of fabricating a semiconductor device having a reduced signal processing time
12/26/2007EP1232528B1 Dram with bitlines in two metallisation levels
12/26/2007EP1212475A4 Protective gas shield apparatus
12/26/2007EP1080490B1 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor
12/26/2007EP1070335B1 Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
12/26/2007CN200997727Y Rack for loading and unloading from cradle easily
12/26/2007CN200997403Y LED fluorescent powder spot gluing device
12/26/2007CN200997395Y Cleaner of semiconductor silicon wafer
12/26/2007CN200997394Y Economizing improved structure of glue-homogenizing developer