Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2008
07/24/2008US20080173974 Semiconductors Device and Method of Manufacturing Such a Device
07/24/2008US20080173973 Semiconductor integrated circuit device
07/24/2008US20080173972 Method of wafer thinning
07/24/2008US20080173971 Electrode isolation method and nanowire-based device having isolated electrode pair
07/24/2008US20080173970 Thermally decomposable spin-on bonding compositions for temporary wafer bonding
07/24/2008US20080173969 Configuration of high-voltage semiconductor power device to achieve three dimensionalcharge coupling
07/24/2008US20080173968 Diode
07/24/2008US20080173967 Image sensor and method for manufacturing the same
07/24/2008US20080173966 Semiconductor device
07/24/2008US20080173961 Semiconductor device, magnetic sensor, and magnetic sensor unit
07/24/2008US20080173960 MicroElectroMechanical Systems Contact Stress Sensor
07/24/2008US20080173959 Z-axis microelectromechanical device with improved stopper structure
07/24/2008US20080173958 Semiconductor Device with Pre-Anneal Sandwich Gate Structure, and Method of Manufacturing
07/24/2008US20080173957 Method of forming a semiconductor device having a symmetric dielectric regions and structure thereof
07/24/2008US20080173956 MOSFET using gate work function engineering for switching applications
07/24/2008US20080173954 Semiconductor device and method for fabricating the same
07/24/2008US20080173953 Fully siliciding regions to improve performance
07/24/2008US20080173952 Semiconductor device and manufacturing method thereof
07/24/2008US20080173950 Structure and Method of Fabricating Electrical Structure Having Improved Charge Mobility
07/24/2008US20080173946 Cmos structure including dual metal containing composite gates
07/24/2008US20080173945 ESD protection scheme for semiconductor devices having dummy pads
07/24/2008US20080173944 MOSFET on SOI device
07/24/2008US20080173943 Method of forming high voltage semiconductor device and the high voltage semiconductor device using the same
07/24/2008US20080173942 STRUCTURE AND METHOD OF MANUFACTURING A STRAINED FinFET WITH STRESSED SILICIDE
07/24/2008US20080173941 Etching method and structure in a silicon recess for subsequent epitaxial growth for strained silicon mos transistors
07/24/2008US20080173939 Semiconductor device and method for fabricating the same
07/24/2008US20080173938 Manufacturing method of semiconductor device
07/24/2008US20080173937 Semiconductor memory devices including vertically oriented transistors and methods of manufacturing such devices
07/24/2008US20080173936 Access device having vertical channel and related semiconductor device and a method of fabricating the access device
07/24/2008US20080173935 Semiconducotor device and method for manufacturing the same
07/24/2008US20080173932 Nonvolatile semiconductor memory and method for manufacturing the same
07/24/2008US20080173931 Multilevel-Cell Memory Structures Employing Multi-Memory Layers with Tungsten Oxides and Manufacturing Method
07/24/2008US20080173930 Semiconductor memory device and method for manufacturing the same
07/24/2008US20080173929 Semiconductor memory device and method for manufacturing the same
07/24/2008US20080173928 Nonvolatile semiconductor memory and process of producing the same
07/24/2008US20080173927 Semiconductor device and method for manufacturing the same
07/24/2008US20080173926 Non-volatile two-transistor semiconductor memory cell and method for producing the same
07/24/2008US20080173924 Semiconductor device and method for manufacturing semiconductor device
07/24/2008US20080173923 Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
07/24/2008US20080173922 Electronic device including fins and discontinuous storage elements and processes of forming and using the same
07/24/2008US20080173921 Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
07/24/2008US20080173920 Memory having a vertical access device
07/24/2008US20080173917 Selective deposition method
07/24/2008US20080173911 Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same
07/24/2008US20080173908 Multilayer silicon nitride deposition for a semiconductor device
07/24/2008US20080173906 Enhanced mobility cmos transistors with a v-shaped channel with self-alignment to shallow trench isolation
07/24/2008US20080173902 Solid state imaging apparatus, imaging apparatus and solid state imaging apparatus manufacturing method
07/24/2008US20080173897 III nitride power device with reduced QGD
07/24/2008US20080173896 Dynamic random access memory cell and manufacturing method thereof
07/24/2008US20080173895 Gallium nitride on silicon with a thermal expansion transition buffer layer
07/24/2008US20080173893 Semiconductor device and method for manufacturing the same
07/24/2008US20080173886 Solid state lighting devices comprising quantum dots
07/24/2008US20080173885 Semiconductor light-emitting device and method of manufacturing the same
07/24/2008US20080173882 Low voltage diode with reduced parasitic resistance and method for fabricating
07/24/2008US20080173880 Light-emitting semiconductor device using group III nitrogen compound
07/24/2008US20080173875 Self-aligned methods based on low-temperature selective epitaxial growth for fabricating silicon carbide devices
07/24/2008US20080173873 Display device and manufacturing method of the same
07/24/2008US20080173871 Display Device and Manufacturing Method of Display Device
07/24/2008US20080173870 Thin film transistor substrate and method of producing the same
07/24/2008US20080173868 Method and resulting structure for fabricating test key structures in dram structures
07/24/2008US20080173867 Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus
07/24/2008US20080173843 Ammonium vanadate, sodium vanadate, potassium vanadate, hydrogen peroxide, ozone; colloidal silica abrasive and a pH adjusting agent; polish a hexagonal silicon carbide single crystal wafer
07/24/2008US20080173599 Material supply device for diffusion furnaces
07/24/2008US20080173560 Glass Substrate Storage Case, Glass Substrate Transfer Apparatus, Glass Substrate Management Apparatus, Glass Substrate Distribution Method , Sealing Member, And Sealing Structure
07/24/2008US20080173477 Circuit board and method for manufacturing the same and semiconductor device and method for manufacturing the same
07/24/2008US20080173403 Plasma stabilization method and plasma apparatus
07/24/2008US20080173402 Microwave plasma processing apparatus
07/24/2008US20080173400 Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method
07/24/2008US20080173399 Plasma processing apparatus component and manufacturing method thereof
07/24/2008US20080173348 Stacked photoelectric conversion device and method of producing the same
07/24/2008US20080173344 First component is a tellurium, selenium semiconductor; second is alumina, lanthanum cobaltate electrical insulator; bulk thermoelectric within electrical path between first and second electrical contact; composite has nanoscale structure that enhances the figure of merit
07/24/2008US20080173339 Method for cleaning semiconductor device
07/24/2008US20080173329 Cleaning sheets, transfer member having cleaning function, and method of cleaning substrate-processing apparatus with these
07/24/2008US20080173238 Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
07/24/2008US20080173096 Semiconductor pressure sensor and manufacturing method thereof
07/24/2008US20080172870 Test device for electrical testing of a unit under test, as well as a method for production of a test drive
07/24/2008DE112006002487T5 Herstellung von Gruppe-III-Nitrid-Halbleiter-Bauteilen Preparation of group-III nitride semiconductor devices
07/24/2008DE112006002268T5 Transistor, organische Halbleitervorrichtung und Verfahren zur Herstellung des Transistors oder der Vorrichtung Transistor, organic semiconductor device, and method of making the transistor device, or
07/24/2008DE112006000019T5 Kontaktstößel, Kontaktarm und Prüfgerät für elektronische Bauelemente Contact plunger, contact and electronic component tester
07/24/2008DE10353387B4 Verfahren zur Herstellung einer Leistungstransistoranordnung und Leistungstransistoranordnung A method of manufacturing a power transistor device and power transistor device
07/24/2008DE10333465B4 Elektronisches Bauteil mit Halbleiterchip, Verfahren zur Herstellung desselben sowie Verfahren zur Herstellung eines Halbleiterwafers mit Kontaktflecken , The same electronic component having the semiconductor chip as well as method for the production process for producing a semiconductor wafer having contact pads
07/24/2008DE102008004817A1 Entwicklungsbearbeitungsvorrichtung Development processing device
07/24/2008DE102008004567A1 Halbleiterbauelement mit Transistorbereichen in einer Substratmulde und Verfahren zur Herstellung desselben Of the same semiconductor device with transistor regions in a substrate recess and methods for preparing
07/24/2008DE102008004020A1 Access device i.e. transistor, for e.g. dynamic RAM, has standardized gate-electrode/word line with downward lip-like section that is arranged close to gate-dielectric and lies over section of lower source/drain region of vertical supports
07/24/2008DE102007060836A1 CMOS-Bildsensor und Verfahren zu dessen Herstellung CMOS image sensor and method for its production
07/24/2008DE102007002711A1 Verfahren und Vorrichtung zur Inspektion einer Oberfläche Method and apparatus for inspecting a surface
07/24/2008DE102006053862B4 Verfahren zum Verpacken von Bauelementen A method of packaging components
07/24/2008DE102005015362B4 Verfahren zur Herstellung einer Praseodymsilikat-Schicht A process for the preparation of a praseodymium-layer
07/24/2008DE102004063590B4 Verfahren zum Bilden eines Siliziumquantenpunktes und Verfahren zum Fertigen einer Halbleiterspeichervorrichtung, die denselben verwendet A method of forming a silicon quantum dot, and method of fabricating a semiconductor memory device that uses the same
07/24/2008DE102004055656B4 Reinigungsvorrichtung für eine Temperiervorrichtung für Substrate und Verfahren zur Reinigung einer Temperiervorrichtung für Substrate Cleaning apparatus for a temperature control for the substrates and methods for cleaning a temperature control for the substrates
07/24/2008CA2675179A1 Folded package camera module and method of manufacture
07/24/2008CA2673270A1 Method for applying markings to substrate surfaces by means of a transfer method
07/23/2008EP1947918A2 Electronic device and method of manufacturing same
07/23/2008EP1947701A2 Nanowires-based transparent conductors
07/23/2008EP1947700A2 Low voltage diode with reduced parasitic resistance and method for fabricating
07/23/2008EP1947699A1 Trench gate power mosfet
07/23/2008EP1947695A2 Display device
07/23/2008EP1947691A1 Circuit carrier laminate and circuit carrier for mounting a semiconductor chip of a smartcard module, and manufacturing methods thereof
07/23/2008EP1947689A2 High temperature fine grain aluminium heater
07/23/2008EP1947688A1 Film peeling method and film peeling apparatus