Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2008
07/24/2008WO2008088071A1 Ceramic member and corrosion-resistant member
07/24/2008WO2008088053A1 Polishing composition
07/24/2008WO2008088019A1 Bipolar semiconductor element
07/24/2008WO2008087997A1 Circuit board manufacturing method
07/24/2008WO2008087996A1 Circuit chip transfer sheet, and circuit board manufacturing method
07/24/2008WO2008087983A1 Table structure, and processing apparatus
07/24/2008WO2008087930A1 Iii nitride compound semiconductor element and method for manufacturing the same, iii nitride compound semiconductor light emitting element and method for manufacturing the same, and lamp
07/24/2008WO2008087922A1 Bonding structure of bonding wire and method for forming the bonding structure
07/24/2008WO2008087907A1 Semiconductor device provided with light receiving means, method for inspecting the semiconductor device, and semiconductor device inspecting apparatus
07/24/2008WO2008087903A1 Apparatus and method for processing substrate
07/24/2008WO2008087902A1 Electrolysis apparatus and electrolysis method for sulfuric acid, and apparatus for processing substrate
07/24/2008WO2008087856A1 Zno-based semiconductor light-emitting element and its manufacturing method
07/24/2008WO2008087855A1 Liquid solvent abutting unit
07/24/2008WO2008087843A1 Plasma processing apparatus, plasma processing method and storage medium
07/24/2008WO2008087840A1 Radiation-sensitive resin composition for immersion exposure and method of forming photoresist pattern
07/24/2008WO2008087827A1 Image forming optical system, exposure equipment and device manufacturing method
07/24/2008WO2008087797A1 Polishing pad and method for producing the same
07/24/2008WO2008087796A1 Holding apparatus and holding method
07/24/2008WO2008087791A1 Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device
07/24/2008WO2008087775A1 Method for silicon thin film formation
07/24/2008WO2008087763A1 Semiconductor device and process for manufacturing the same
07/24/2008WO2008087756A1 Integrated circuit device, method for controlling operation of integrated circuit device, and method for manufacturing integrated circuit device
07/24/2008WO2008087725A1 Substrate fixing device and substrate fixing method
07/24/2008WO2008087692A1 Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot for use in the semiconductor memory
07/24/2008WO2008087686A2 Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process
07/24/2008WO2008087576A1 Semiconductor substrate processing
07/24/2008WO2008087530A1 Underfill anchor structure for an integrated circuit
07/24/2008WO2008087527A1 Method of producing an soi structure with an insulating layer of controlled thickness
07/24/2008WO2008087516A1 Process for fabricating a hybrid substrate
07/24/2008WO2008087499A1 Manufacturing method of dram capacitors and corresponding device
07/24/2008WO2008087498A1 Dram stacked capacitor and its manufacturing method using cmp
07/24/2008WO2008087063A1 Performance enhancement on both nmosfet and pmosfet using self-aligned dual stressed films
07/24/2008WO2008087062A1 Subground rule sti fill for hybrid orientation technology (hot) type structure
07/24/2008WO2008086681A1 Method for fabricating metal substrates with high-quality surfaces
07/24/2008WO2008067228B1 Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions
07/24/2008WO2008066885A2 Method and system for detecting existence of an undesirable particle during semiconductor fabrication
07/24/2008WO2008060148A3 Atomizer for atomizing a doping solution and a method for treating a substrate
07/24/2008WO2008058248A3 Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
07/24/2008WO2008058049A3 Ion implantation device and method of semiconductor manufacturing by the implantation of molecular ions containing phosphorus and arsenic
07/24/2008WO2008056437A8 Copolymer for immersion lithography and compositions
07/24/2008WO2008044840A3 Machining apparatus and semiconductor strip machining system using the same
07/24/2008WO2008039534A3 Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
07/24/2008WO2008036208A3 Wafer level chip package and a method of fabricating thereof
07/24/2008WO2008010891A3 Capacitorlbss one-transistor floating-body dram cell and method of forming the same
07/24/2008WO2008005832A3 Pre-cleaning of substrates in epitaxy chambers
07/24/2008WO2007146803A3 Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
07/24/2008WO2007139780A3 Lighting device and method of making
07/24/2008WO2007124415A3 Crystallographic preferential etch to define a recessed-region for epitaxial growth
07/24/2008WO2007118061A3 Nano-based gas diffusion media
07/24/2008WO2007097855A3 Active spectral control of duv light source
07/24/2008WO2007067982A3 Flip chip mlp with conductive ink
07/24/2008WO2007015965A3 Semiconductor die attachment for high vacuum tubes
07/24/2008WO2006113186A3 Interconnect structure and method of fabrication of same
07/24/2008WO2006055601A3 Method for fabricating and separating semiconductor devices
07/24/2008US20080178141 Pattern correction apparatus, pattern correction program, pattern correction method and fabrication method for semiconductor device
07/24/2008US20080178131 Testing method and method for manufacturing an electronic device
07/24/2008US20080177060 Use of axial substituted phthalocyanine compoud for preparing organic thin-film transistor
07/24/2008US20080176982 slurries comprising cerium oxide particles, a water soluble polymer selected from acrylic polymers, polyvinyl acetate, polyvinyl imidazole and polyvinyl pyrrolidone, and an acetylenic organic compound such as ethoxylated tetramethyl-5-decyne-4,7-diol; polishes for dielectrics; semiconductors
07/24/2008US20080176486 Polishing apparatus including separate retainer rings
07/24/2008US20080176415 Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same
07/24/2008US20080176414 Systems and methods for inducing crystallization of thin films using multiple optical paths
07/24/2008US20080176413 Selective plasma processing method
07/24/2008US20080176412 Atomic layer deposition system including a plurality of exhaust tubes
07/24/2008US20080176411 Techniques for providing decoupling capacitance
07/24/2008US20080176410 Rotation; flattening
07/24/2008US20080176409 Etching method and etching equipment
07/24/2008US20080176408 Method and apparatus for manufacturing semiconductor devices, control program and computer-readable storage medium
07/24/2008US20080176407 Method of manufacturing semiconductor device
07/24/2008US20080176406 Methods for Fabricating Semiconductor Structures
07/24/2008US20080176405 Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution
07/24/2008US20080176404 Method for fabricating semiconductor device
07/24/2008US20080176403 Method of polishing a layer and method of manufacturing a semiconductor device using the same
07/24/2008US20080176402 Method for fabricating semiconductor device with recess gate
07/24/2008US20080176401 Method for forming contact hole
07/24/2008US20080176400 III-V Compound Semiconductor Substrate Manufacturing Method
07/24/2008US20080176399 Metallic silicide forming method and method of manufacturing semiconductor device
07/24/2008US20080176398 High throughput, low cost dual-mode patterning method for large area substrates
07/24/2008US20080176397 Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturing
07/24/2008US20080176396 Manufacturing method of semiconductor device
07/24/2008US20080176395 Copper interconnect systems
07/24/2008US20080176394 Method for manufacturing semiconductor device
07/24/2008US20080176393 Bumping electronic components using transfer substrates
07/24/2008US20080176392 Method of fabricating grayscale mask using smart cut® wafer bonding process
07/24/2008US20080176391 Method for manufacturing semiconductor device
07/24/2008US20080176390 Method of forming carbon-containing silicon nitride layer
07/24/2008US20080176389 Semiconductor memory device and method of manufacturing the same
07/24/2008US20080176388 Methods for removing photoresist from semiconductor structures having high-k dielectric material layers
07/24/2008US20080176387 Plasma doping methods using multiple source gases
07/24/2008US20080176386 Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate
07/24/2008US20080176385 Method for manufacturing a semiconductor device
07/24/2008US20080176384 Methods of forming impurity regions in semiconductor devices
07/24/2008US20080176383 Manufacturing Apparatus of Semiconductor Device and Method for Manufacturing Semiconductor Device
07/24/2008US20080176382 Process of forming and controlling rough interfaces
07/24/2008US20080176381 Surface roughening process
07/24/2008US20080176380 Dielectrics; wafers; heat treatment
07/24/2008US20080176379 Method for forming isolation structure in semiconductor device
07/24/2008US20080176378 Multiple-depth sti trenches in integrated circuit fabrication
07/24/2008US20080176377 Method of manufacturing semiconductor device
07/24/2008US20080176376 Making method for product information
07/24/2008US20080176375 Method for forming a dielectric layer