Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2009
01/06/2009US7473316 Method of growing nitrogenous semiconductor crystal materials
01/06/2009US7473301 Adhesive particle shielding
01/06/2009US7472887 Valve for vacuum exhaustion system
01/06/2009US7472784 Conveyor belt cleaner scraper blade with sensor and control system therefor
01/06/2009US7472713 Substrate processing apparatus
01/06/2009US7472579 Liquid flow proximity sensor for use in immersion lithography
01/06/2009US7472472 Electronic part mounting apparatus
01/06/2009CA2366999C Integrated sensor packaging and multi-axis sensor assembly packaging
01/06/2009CA2352132C Method of producing a single crystal gan substrate and single crystal gan substrate
01/02/2009DE4338432B4 Integrierte Halbleiterschaltungsbaueinheit, Herstellungsverfahren dafür und Montageverfahren dafür Integrated Halbleiterschaltungsbaueinheit, manufacturing method thereof, and assembly method thereof
01/02/2009DE19856331B4 Verfahren zur Eingehäusung elektronischer Bauelemente Method for Eingehäusung electronic components
01/02/2009DE112007000305T5 Transportvorrichtung und Transportverfahren Transport means and transport method
01/02/2009DE112004002641B4 Verfahren zur Herstellung eines verformten FinFET-Kanals A process for producing a strained FinFET channel
01/02/2009DE112004001232B4 Fensteranordnung Fenestration
01/02/2009DE10309502B4 Verfahren zur Herstellung einer Lothügelstruktur und Lothügelstruktur A process for preparing a Lothügelstruktur and Lothügelstruktur
01/02/2009DE10234951B4 Verfahren zur Herstellung von Halbleiterschaltungsmodulen A method for manufacturing semiconductor circuit modules
01/02/2009DE102008029813A1 Halbleiterbauteil und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
01/02/2009DE102008029298A1 Integrierte Schaltung mit einem Elektrodenboden und Elektrodenseitenwand kontaktierenden Kontakt An integrated circuit including an electrode and ground electrode side wall contacting contact
01/02/2009DE102008028943A1 Halbleiterbauelement mit einem Beanspruchungspuffer A semiconductor device comprising a stress buffer
01/02/2009DE102008028942A1 Halbleiterbauelement Semiconductor device
01/02/2009DE102008026860A1 Speicher mit gemeinsam genutztem Speichermaterial Memory shared-memory material
01/02/2009DE102008023471A1 Halbleiterbauelement Semiconductor device
01/02/2009DE102008023127A1 Halbleiterbauelement Semiconductor device
01/02/2009DE102008009017A1 Verfahren zur Messung eines Halbleitersubstrats A method of measuring a semiconductor substrate,
01/02/2009DE102008005872A1 Halbleitervorrichtung und Herstellungsverfahren dafür A semiconductor device and manufacturing method thereof
01/02/2009DE102008002647A1 Rauschreduktion in einem Halbleiterbauelement unter Verwendung von Gegendotierung Noise reduction in a semiconductor device using counter-doping
01/02/2009DE102008001943A1 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation
01/02/2009DE102008001531A1 Doppelgate-FinFET Double-gate FinFET
01/02/2009DE102007030308A1 Verfahren zum Herstellen einer Speicherstruktur A method of fabricating a memory structure
01/02/2009DE102007030286A1 Wafer-Anordnung und Verfahren zum Herstellen einer Wafer-Anordnung Wafer arrangement and method of manufacturing a wafer-arrangement
01/02/2009DE102007030106A1 Verfahren und Vorrichtung zum Behandeln eines Halbleitersubstrats Method and apparatus for treating a semiconductor substrate
01/02/2009DE102007030054A1 Transistor mit reduziertem Gatewiderstand und verbesserter Verspannungsübertragungseffizienz und Verfahren zur Herstellung desselben Of the same transistor with reduced gate resistance and improved stress transfer efficiency and methods for preparing
01/02/2009DE102007030053A1 Reduzieren der pn-Übergangskapazität in einem Transistor durch Absenken von Drain- und Source-Gebieten Reduce the pn junction capacitance of a transistor by lowering of drain and source regions
01/02/2009DE102007030052A1 Automatische Abscheideprofilzielsteuerung Automatic Abscheideprofilzielsteuerung
01/02/2009DE102007030021A1 Verfahren zum Ausbilden einer Halbleiterstruktur mit einem Feldeffekttransistor, der ein verspanntes Kanalgebiet aufweist A method of forming a semiconductor structure with a field effect transistor having a stressed channel region
01/02/2009DE102007029829A1 Semiconductor component, has electrical contact structure with two metallic layers, where one of metallic layers is provided on other metallic layer such that latter metallic layer is surrounded by former metallic layer
01/02/2009DE102007029756A1 Halbleiterstruktur zur Herstellung eines Trägerwaferkontaktes in grabenisolierten SOI-Scheiben A semiconductor structure for the manufacture of a carrier wafer in contact grave isolated SOI wafers
01/02/2009DE102007029755A1 Light shielding layer producing method for protecting light sensitive region of semiconductor element in e.g. integrated circuit , involves proportionately removing negative photoresist from defined areas by photolithography process
01/02/2009DE102007025658A1 Contact wire arrangement has two electrically conducting elements, spacer and contact wire, where contact wire is bonded on former element in bonding area
01/02/2009DE102007015505B4 Verfahren zur Herstellung einer Halbleiterstruktur A process for producing a semiconductor structure
01/02/2009DE102007009727B4 Verfahren zum Herstellen eines Halbleiterbauelements und Transistor-Halbleiterbauelement A method of manufacturing a semiconductor device and transistor-semiconductor component
01/02/2009DE102007009227B4 Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben Of the same semiconductor device with rectifying junctions, as well as manufacturing method for manufacturing
01/02/2009DE102006058010B4 Halbleiterbauelement mit Hohlraumstruktur und Herstellungsverfahren A semiconductor device structure and manufacturing method with cavity
01/02/2009DE102006011473B4 Mehrchipgehäuse und Verfahren zum Bilden von Mehrchipgehäusen für eine ausgeglichene Leistung Multi-chip package and method of forming of multi-chip packages for a balanced performance
01/02/2009DE102005046426B4 MRAM und Verfahren zu dessen Herstellung MRAM and methods for its preparation
01/02/2009DE102004063994B4 Chipgroße Packungsstruktur Large chip package structure
01/02/2009DE102004052647B4 Methode zur Verbesserung der thermischen Eigenschaften von Halbleiter-Speicherzellen im Herstellungsverfahren und nichtflüchtige, resistiv schaltende Speicherzelle Method for improving the thermal characteristics of semiconductor memory cells in the manufacturing process and non-volatile, resistive switching memory cell
01/02/2009DE102004015899B4 Herstellungsverfahren für ein PCM-Speicherelement Production method of a PCM memory element
01/02/2009DE102004013047B4 Verfahren zur Strukturierung einer leitfähigen Schicht eines Halbleiterbauelements A method for patterning a conductive layer of a semiconductor device
01/02/2009DE102004007696B4 Testvorrichtung zum Prüfen eines Halbleiterbauteils mit Kontaktflächen auf seiner Oberseite und seiner Unterseite und Verfahren zum Prüfen des Halbleiterbauteils Test apparatus for testing a semiconductor device with contact areas on its top and bottom and method for testing the semiconductor device
01/02/2009DE10113110B4 Filmmaterial und Film mit niedriger Dielektrizitätskonstante Footage and low dielectric constant film
01/01/2009US20090007043 Managing Integrated Circuit Stress Using Dummy Diffusion Regions
01/01/2009US20090006174 Method and system to connect consumers to information
01/01/2009US20090004887 Apparatus and method for deposition of protective film for organic electroluminescence
01/01/2009US20090004886 Method of manufacturing an insulating film containing hafnium
01/01/2009US20090004885 Method for fabricating semiconductor device
01/01/2009US20090004884 Oxidizing method and oxidizing apparatus
01/01/2009US20090004883 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
01/01/2009US20090004882 Method of forming high-k dual dielectric stack
01/01/2009US20090004881 Hybrid high-k gate dielectric film
01/01/2009US20090004880 Mask reuse in semiconductor processing
01/01/2009US20090004879 Test structure formation in semiconductor processing
01/01/2009US20090004878 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
01/01/2009US20090004877 Substrate processing apparatus and semiconductor device manufacturing method
01/01/2009US20090004876 Method for Etching Single Wafer
01/01/2009US20090004875 Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate
01/01/2009US20090004874 Inductively coupled dual zone processing chamber with single planar antenna
01/01/2009US20090004873 Hybrid etch chamber with decoupled plasma controls
01/01/2009US20090004872 Method of manufacturing a semiconductor device
01/01/2009US20090004871 Processing method and plasma processing device
01/01/2009US20090004870 Methods for high temperature etching a high-k material gate structure
01/01/2009US20090004869 Mask forming and implanting methods using implant stopping layer
01/01/2009US20090004868 Amorphous silicon oxidation patterning
01/01/2009US20090004867 Method of Fabricating Pattern in Semiconductor Device Using Spacer
01/01/2009US20090004866 Method of forming micro pattern of semiconductor device
01/01/2009US20090004865 Method for treating a wafer edge
01/01/2009US20090004864 Cmp method of semiconductor device
01/01/2009US20090004863 Polishing liquid and polishing method using the same
01/01/2009US20090004862 Method for forming fine patterns in semiconductor device
01/01/2009US20090004861 Method for fabricating semiconductor device with vertical channel
01/01/2009US20090004860 Atomic layer volatilization process for metal layers
01/01/2009US20090004859 Method of machining wafer
01/01/2009US20090004858 Tantalum amide complexes for depositing tantalum-containing films, and method of making same
01/01/2009US20090004857 Method of manufacturing a semiconductor device using the self aligned contact (SAC) process flow for semiconductor devices with aluminum metal gates
01/01/2009US20090004856 Method of forming contact plug in semiconductor device
01/01/2009US20090004855 Method for fabricating semiconductor device
01/01/2009US20090004854 Method of Fabricating Flash Memory Device
01/01/2009US20090004853 Method for forming a metal silicide
01/01/2009US20090004852 Nanostructures Containing Metal Semiconductor Compounds
01/01/2009US20090004851 Salicidation process using electroless plating to deposit metal and introduce dopant impurities
01/01/2009US20090004850 Process for forming cobalt and cobalt silicide materials in tungsten contact applications
01/01/2009US20090004849 Method for fabricating an inter dielectric layer in semiconductor device
01/01/2009US20090004848 Method for fabricating interconnection in semiconductor device
01/01/2009US20090004847 Method of manufacturing semiconductor device
01/01/2009US20090004846 Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
01/01/2009US20090004845 Method for Making Semiconductor Structures Implementing Sacrificial Material
01/01/2009US20090004844 Forming Complimentary Metal Features Using Conformal Insulator Layer
01/01/2009US20090004843 Method for forming dual bit line metal layers for non-volatile memory
01/01/2009US20090004842 Method of manufacturing semiconductor device
01/01/2009US20090004841 Forming vias using sacrificial material