Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2010
12/16/2010US20100314636 Organic light emitting device, display unit including the same, and illuminating device including the same
12/16/2010US20100314634 Pixel structure and manufacturing method thereof and display panel
12/16/2010US20100314633 Front end scribing of light emitting diode (led) wafers and resulting devices
12/16/2010US20100314628 Process for transferring a layer of strained semiconductor material
12/16/2010US20100314627 DIAMOND GaN DEVICES AND ASSOCIATED METHODS
12/16/2010US20100314626 Silicon carbide semiconductor device and method of manufacturing the same
12/16/2010US20100314625 GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture
12/16/2010US20100314622 Pixel structure and method of making the same
12/16/2010US20100314619 Test Structures and Methods for Semiconductor Devices
12/16/2010US20100314618 Thin film transistor, method of producing the same, eletctrooptic apparatus, and sensor
12/16/2010US20100314617 Vanadium dioxide nanowire, fabrication process thereof, and nanowire device using vanadium dioxide nanowire
12/16/2010US20100314605 Vertical deep ultraviolet light emitting diodes
12/16/2010US20100314602 Nonvolatile memory device and method for manufacturing same
12/16/2010US20100314601 Phase change memory having stabilized microstructure and manufacturing method
12/16/2010US20100314599 Chalcogenide film and method of manufacturing same
12/16/2010US20100314598 Phase change memory device having bit-line discharge block and method of fabricating the same
12/16/2010US20100314541 Microstructured pattern inspection method
12/16/2010US20100314377 Annealing device
12/16/2010US20100314360 Method and apparatus for fast and local anneal of anti-ferromagnetic (af) exchange-biased magnetic stacks
12/16/2010US20100314257 Methods of Reducing Interlayer Discontinuities in Electrochemically Fabricated Three-Dimensional Structures
12/16/2010US20100314048 Adjusting current ratios in inductively coupled plasma processing systems
12/16/2010US20100314046 Plasma reactor with a multiple zone thermal control feed forward control apparatus
12/16/2010US20100313957 Quantum dot solar cells
12/16/2010US20100313945 Solar Cell Substrate and Methods of Manufacture
12/16/2010US20100313944 Wrapped optoelectronic devices and methods for making same
12/16/2010US20100313941 Vertical junction tandem/multi-junction pv device
12/16/2010US20100313809 Substrate processing system having improved substrate transport system
12/16/2010US20100313667 Pressure-sensitive adhesive sheet for testing
12/16/2010US20100313660 Mems device and method of fabricating the mems device
12/16/2010US20100313583 Helium management control system
12/16/2010US20100313397 Apparatus for manufacturing polycrystalline silicon thin film
12/16/2010DE112008003598T5 Verfahren zum Ätzen eines Kontakts mit hohem Längen-/Breitenverhältnis A method of etching a contact with a high length / width ratio
12/16/2010DE102010023031A1 Mit Seltenerden verbesserter Transistor mit hoher Elektronenbeweglichkeit und Verfahren zu seiner Herstellung With rare earths improved transistor having high electron mobility and process for its preparation
12/16/2010DE102010017306A1 Halbleiterbauelemente und Verfahren zu ihrer Herstellung Semiconductor devices and processes for their preparation
12/16/2010DE102009043916A1 Verfahren zur Herstellung elektrischer Kontakte auf einem Halbleiterbauelement A process for manufacture of electrical contacts on a semiconductor device
12/16/2010DE102009033313A1 Reduzierte Prozessempfindlichkeit von Elektroden-Halbleiter-Gleichrichtern Reduced process sensitivity of electrode semiconductor rectifiers
12/16/2010DE102009024385A1 Verfahren zur Herstellung eines Leistungshalbleitermoduls und Leistungshalbleitermodul mit einer Verbindungseinrichtung Method for producing a power semiconductor module and power semiconductor module with a connecting device
12/16/2010DE102009023377A1 Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalte, die auf der Grundlage eines Opfermaterials hergestellt sind Microstructure component with a self-aligned metallization structure with air gaps, which are formed on the basis of a sacrificial material
12/16/2010DE102009022477A1 Verfahren zum Texturieren einer Oberfläche eines Halbleitersubstrates sowie Vorrichtung zum Durchführen des Verfahrens A method for texturing a surface of a semiconductor substrate, as well as apparatus for carrying out the method
12/16/2010DE102009021488A1 Verbessertes Elektromigrationsverhalten von Kupferleitungen in Metallisierungssystemen von Halbleiterbauelementen durch Legierung von Oberflächen Improved electromigration behavior of copper lines in metallization of semiconductor devices by alloy surfaces
12/16/2010DE102009018112B3 Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement A process for producing a semiconductor component, in particular a solar cell, with a locally opened, as well as dielectric layer corresponding semiconductor component
12/16/2010DE102008051403B4 Thyristoranordnung mit einem Zündstufenthyristor, bei der die Stromanstiegsgeschwindigkeit begrenzt ist und Verfahren zum Betrieb der Thyristoranordnung Thyristor arrangement having a Zündstufenthyristor, wherein the rate of current rise is limited, and method of operating the thyristor
12/16/2010DE102007021977B4 Verfahren zur Herstellung einer Transistorvorrichtung mit vertieftem Gate A method of manufacturing a transistor device with recessed gate
12/16/2010DE102006009226B4 Verfahren zum Herstellen eines Transistors mit einer erhöhten Schwellwertstabilität ohne Durchlass-Strombeeinträchtigung und Transistor A method for manufacturing a transistor with an increased Schwellwertstabilität without forward current impairment and transistor
12/16/2010DE102005029265B4 Arraysubstrat für ein LCD sowie zugehöriges Herstellverfahren Array substrate for an LCD and associated manufacturing processes
12/16/2010DE102005004160B4 CSP-Halbleiterbaustein, Halbleiterschaltungsanordnung und Verfahren zum Herstellen des CSP-Halbleiterbausteins CSP semiconductor device, the semiconductor circuit arrangement and method of manufacturing the CSP semiconductor device
12/16/2010DE102004063148B4 Isolierverfahren für Halbleiter-Bauelemente Isolation for semiconductor devices
12/16/2010DE102004060363B4 Halbleitersubstrat mit pn-Übergang und Verfahren zur Herstellung Semiconductor substrate having pn junction and methods for preparing
12/15/2010EP2262032A2 Organic electroluminescence device and its manufacturing method
12/15/2010EP2262031A2 Light emitting display device
12/15/2010EP2262017A2 Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding
12/15/2010EP2262008A2 Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
12/15/2010EP2262007A2 Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
12/15/2010EP2261991A2 Method of fabricating a high-voltage field-effect transistor
12/15/2010EP2261990A2 High withstand voltage semiconductor device and manufacturing method thereof
12/15/2010EP2261989A2 High voltage switching devices and process for forming same
12/15/2010EP2261988A2 High voltage switching devices and process for forming same
12/15/2010EP2261981A2 Method for manufacturing an OLED or a blank for forming an OLED as well as such a blank or OLED
12/15/2010EP2261978A1 Semiconductor device and manufacturing method thereof
12/15/2010EP2261971A1 Power module fabrication process
12/15/2010EP2261970A2 Semiconductor device manufacturing method having a step of applying a copper foil on a substrate as a part of a wiring connecting an electrode pad to a mounting terminal
12/15/2010EP2261969A1 Process for the singulation of integrated devices in thin semiconductor chips
12/15/2010EP2261968A2 Semiconductor device and method of manufacturing the same
12/15/2010EP2261967A2 Tape for processing semiconductor wafer
12/15/2010EP2261966A2 A chucking system to hold a substrate and a lithographic system including the chucking system
12/15/2010EP2261965A1 Crimp bump interconnection
12/15/2010EP2261963A1 Semiconductor device and method for manufacturing the same
12/15/2010EP2261962A2 An electronic device package and method of manufacture
12/15/2010EP2261961A2 Method of making a vertical MOS transistor device
12/15/2010EP2261960A1 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
12/15/2010EP2261959A2 High temperature ion implantation of nitride based HEMTS
12/15/2010EP2261958A2 Process for making non-oxygen precipitating czochralski silicon wafers
12/15/2010EP2261957A2 Substrate treating method and method of manufacturing semiconductor device using the same
12/15/2010EP2261956A2 Dielectric film
12/15/2010EP2261955A2 Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
12/15/2010EP2261954A1 Method for producing soi substrate
12/15/2010EP2261953A2 Optical waveguide devices with additional polysilicon layers
12/15/2010EP2261952A2 Substrate processing apparatus
12/15/2010EP2261951A2 LED having vertical structure and method for fabricating the same
12/15/2010EP2261950A2 LED having vertical structure and method for fabricating the same
12/15/2010EP2261949A2 LED having vertical structure and method for fabricating the same
12/15/2010EP2261742A2 Lithographic apparatus and device manufacturing method.
12/15/2010EP2261741A2 Lithographic apparatus and device manufacturing method
12/15/2010EP2261737A1 Positive photosensitive resin composition and method of forming cured film from the same
12/15/2010EP2261736A2 Method of manufacturing a photomask
12/15/2010EP2261733A1 Pixel designs of improving the aperture ratio in an LCD
12/15/2010EP2261401A1 Nitride semiconductor crystal and manufacturing method thereof
12/15/2010EP2261400A1 Composite assembly for an electrical connector and method of manufacturing the composite assembly
12/15/2010EP2261396A1 Compound material, method of producing the same and apparatus for producing the same
12/15/2010EP2261394A1 Production equipment and method of thin-film laminate
12/15/2010EP2261393A2 Plasma uniformity control by gas diffuser hole design
12/15/2010EP2261391A1 Processing apparatus and processing method
12/15/2010EP2261390A2 Mechanical enhancer additives for low dielectric films
12/15/2010EP2261389A2 Method of forming high-k dielectric films based on novel zirconium, and hafnium precursors and their use for semiconductor manufacturing
12/15/2010EP2261174A2 RFID tag using nanowire transistors
12/15/2010EP2261007A1 Process for production of nanostructures
12/15/2010EP2260516A1 Opto-electronic semiconductor chip and method for producing the same
12/15/2010EP2260512A2 Method of fabricating a semiconductor package or circuit assembly using a fluxing underfill composition applied to solder contact points in a dip process
12/15/2010EP2260510A1 Method of manufacturing a semiconductor device and semiconductor device
12/15/2010EP2260509A1 Processing chamber
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