Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2010
12/15/2010EP2260508A1 Self-assembly of chips by substrate
12/15/2010EP2260507A1 Methods for etching the edge of a silicon wafer
12/15/2010EP2260506A1 Method for forming a compound semi-conductor thin-film
12/15/2010EP2260352A1 Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith
12/15/2010EP2260013A2 Ceria material and method of forming same
12/15/2010EP2030231B1 Method and device for monitoring a heat treatment of a microtechnological substrate
12/15/2010EP1794789B1 Structures for microelectronics and microsystem and manufacturing process
12/15/2010EP1668697B1 Electrical circuit apparatus and methods for assembling same
12/15/2010EP1665915B1 High reliability multilayer circuit substrates and methods for their formation
12/15/2010EP1639626B1 Storage system for wafers
12/15/2010EP1601013B1 Precision substrate storage container
12/15/2010EP1597760B1 Integrated electronic component having specifically produced nanotubes in vertical structures
12/15/2010EP1548820B1 Substrate-storing container
12/15/2010EP1547156B1 Finfet having improved carrier mobility and method of its formation
12/15/2010EP1540723B1 A method of increasing the area of a useful layer of material transferred onto a support
12/15/2010EP1535337B1 Method of making separate sidewall oxidation of a flash memory cell
12/15/2010EP1485763B1 Method and apparatus for printing large data flows
12/15/2010EP1470591B1 Cluster packaging of light emitting diodes
12/15/2010EP1269544B1 Method of manufacturing a charge-coupled image sensor
12/15/2010EP1262996B1 Semiconductor integrated circuit device
12/15/2010EP1219141B1 Multi-zone resistance heater
12/15/2010EP1186014B1 Techniques for etching a low capacitance dielectric layer
12/15/2010EP1060441B1 Improved pattern generator
12/15/2010EP1060440B1 Pattern generator using euv
12/15/2010EP1041610B1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
12/15/2010EP0964442B1 Ball arranging substrate for forming bump, ball arranging head, ball arranging apparatus, and ball arranging method
12/15/2010CN201673922U Transferring vehicle with quartz tube for solar battery diffusion
12/15/2010CN201673921U Laminated transmission device of solar panels
12/15/2010CN201673920U Solar silicon wafer transfer storage box
12/15/2010CN201673909U Grooved power MOS (Metal Oxide Semiconductor) device
12/15/2010CN201673908U Embedded passive device wafer-level chip size packaging structure
12/15/2010CN201673897U Wafer fixing devoice for ion implantation
12/15/2010CN201673896U Photomask memory
12/15/2010CN201673895U Improved cartridge structure
12/15/2010CN1979850B Capacitor element, semiconductor device and manufacture method
12/15/2010CN1979338B Coating-developing apparatus, coating-developing method, computer program and computer-readable recording medium
12/15/2010CN1976003B Semiconductor device manufacturing method and substrate processing system
12/15/2010CN1961261B Radiation-sensitive composition, laminate, process for producing the sane and electronic part
12/15/2010CN1959541B Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of lithographic apparatus
12/15/2010CN1940714B System and method for compensating selective optical graph
12/15/2010CN1904741B Mask-free exposure method
12/15/2010CN1885532B Circuitry component structure manufacture method and structure
12/15/2010CN1877455B Immersion photo-etching device and method thereof
12/15/2010CN1873922B A method for making a semiconductor device with a high-k gate dielectric layer and a silicide gate electrode
12/15/2010CN1870235B Organic tft, method of manufacturing the same and flat panel display device having the same
12/15/2010CN1803964B Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using same
12/15/2010CN1774639B Method for determining at least one parameter value related with wafer
12/15/2010CN1531066B Manufacture and structure of semiconductor on insulating layer with concave resistance
12/15/2010CN101919076A Group III nitride semiconductor device, epitaxial substrate, and method for manufacturing group iii nitride semiconductor device
12/15/2010CN101919069A Method and device for coating a carrier for thin-film solar cells
12/15/2010CN101919060A Thin film transistor substrate and display device
12/15/2010CN101919057A Semiconductor device and method of manufacturing semiconductor device
12/15/2010CN101919056A Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
12/15/2010CN101919048A Memory cell with planarized carbon nanotube layer and methods of forming the same
12/15/2010CN101919047A Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
12/15/2010CN101919046A Methods and apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography
12/15/2010CN101919045A Enhanced transistor performance of n-channel transistors by using an additional layer above a dual stress liner in a semiconductor device
12/15/2010CN101919044A Capacitor, semiconductor device, method for manufacturing the capacitor, and method for manufacturing the semiconductor device
12/15/2010CN101919043A Display device
12/15/2010CN101919042A Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection
12/15/2010CN101919041A Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
12/15/2010CN101919040A Vacuum chuck
12/15/2010CN101919039A A method and device for aligning components
12/15/2010CN101919038A Wafer bow metrology arrangements and methods thereof
12/15/2010CN101919037A Coated copper wire for ball bonding
12/15/2010CN101919036A A semiconductor device including a die region designed for aluminum-free solder bump connection and a test structure designed for aluminum-free wire bonding
12/15/2010CN101919035A Semiconductor device having grooved leads to confine solder wicking
12/15/2010CN101919034A Apparatus for forming semiconductor wafer protection film
12/15/2010CN101919033A Method for manufacturing a microelectronic package comprising at least one microelectronic device
12/15/2010CN101919032A Semiconductor device and semiconductor device manufacturing method
12/15/2010CN101919031A Method for processing amorphous carbon film, and semiconductor device manufacturing method using the method
12/15/2010CN101919030A Substrate cleaning method for removing oxide film
12/15/2010CN101919029A Substrate-supporting device, and a substrate-processing device having the same
12/15/2010CN101919028A Polysilicon deposition apparatus
12/15/2010CN101919027A Combinatorial process system
12/15/2010CN101919026A Method and apparatus for enhancing flow uniformity in a process chamber
12/15/2010CN101919025A Container for storing plates for electronic circuits and relative method
12/15/2010CN101919013A Chip capacitor
12/15/2010CN101918906A Thermal interface with non-tacky surface
12/15/2010CN101918888A Display device, process for producing the display device, and sputtering target
12/15/2010CN101918615A Electrolytic method
12/15/2010CN101918219A Positioning device to position one or more plates for electronic circuits in a metal deposition unit, and related method
12/15/2010CN101916826A Organic semiconductor device and method for manufacturing the same
12/15/2010CN101916817A Preparation method of LED chip
12/15/2010CN101916786A High-power planar junction bidirectional TVS diode chip and production method thereof
12/15/2010CN101916785A Semiconductor device, manufacturing method, and electronic device
12/15/2010CN101916784A SOI (Silicon on Insulator) variable buried oxide layer thickness device and preparation method thereof
12/15/2010CN101916783A Transverse and longitudinal diffusion type field effect transistor of depressed channel and manufacturing method thereof
12/15/2010CN101916782A Depression channel type transistor made of ferroelectric material and manufacturing method thereof
12/15/2010CN101916781A Method of forming an mos transistor and structure therefor
12/15/2010CN101916780A LDMOS device with multilayer super-junction structure
12/15/2010CN101916779A SOI super junction LDMOS structure capable of completely eliminating substrate-assisted depletion effect
12/15/2010CN101916778A High-voltage semiconductor device and manufacturing method thereof
12/15/2010CN101916776A SOIMOS (Silicon on Insulator Metal Oxide Semiconductor) device with BTS (Bodied Tied to Source) structure and manufacture method thereof
12/15/2010CN101916775A High-voltage semiconductor device and manufacturing method thereof
12/15/2010CN101916774A Method for forming field effect transistor and semiconductor device
12/15/2010CN101916773A Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method
12/15/2010CN101916772A Dielectric layer
12/15/2010CN101916771A A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
12/15/2010CN101916770A Si-Ge-Si semiconductor structure with double graded junctions and forming method thereof