Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2008
10/28/2008US7443725 Floating gate isolation and method of making the same
10/28/2008US7443724 Semiconductor memory device for storing multivalued data
10/28/2008US7443723 Multi-state memory
10/28/2008US7443434 Image sensing apparatus including a microcontroller
10/28/2008US7442984 Semiconductor memory device and manufacturing method thereof
10/23/2008WO2008127866A1 Resistive memory cell fabrication methods and devices
10/23/2008WO2008127293A2 Memory transistor with nanodot floating gate and carbon nanotube control gate and manufacturing method thereof
10/23/2008WO2008070799A3 Apparatus, system, and method for servicing object requests within a storage controller
10/23/2008US20080263266 Adaptive dynamic reading of flash memories
10/23/2008US20080263265 Adaptive dynamic reading of flash memories
10/23/2008US20080261365 Nonvolatile semiconductor memory device and manufacturing method thereof
10/23/2008US20080259691 Two-Bits Per Cell Not-AND-Gate (NAND) Nitride Trap Memory
10/23/2008US20080259690 Flash memory device
10/23/2008US20080259689 Mimicking program verify drain resistance in a memory device
10/23/2008US20080259686 Non-volatile memory device, memory system, and lsb read method
10/23/2008US20080259685 Nonvolatile semiconductor memory device
10/23/2008US20080259684 Programming a NAND flash memory with reduced program disturb
10/23/2008US20080259683 Method and circuit for programming a memory cell, in particular of the nor flash type
10/23/2008US20080259682 Semiconductor device
10/23/2008US20080258129 Phase-Change Memory Device
10/23/2008US20080257967 IC card module
10/23/2008DE19900652B4 Kraftfahrzeug-Steuereinrichtung Motor vehicle control device
10/23/2008DE102007032784A1 Integrierte Schaltung, Speichermodul, Verfahren zum Betreiben einer integrierten Schaltung, Verfahren zum Herstellen einer integrierten Schaltung, und Computerprogramm Integrated circuit, memory, the method of operating an integrated circuit, A method for fabricating an integrated circuit, and computer program
10/23/2008DE102004038417B4 Programmierschaltung und -verfahren und nichtflüchtiger Halbleiterspeicherbaustein Programming circuit and method, and non-volatile semiconductor memory device
10/22/2008EP1983574A2 Non-volatile memory devices and methods of operating the same
10/22/2008CN101290972A Erasable and readable thin film type resistor switching device and preparing method thereof
10/22/2008CN101290971A Write-once-read-many electrical storage and preparing method thereof
10/22/2008CN101290970A Rewritable electrical storage with inorganic thin film and preparing method thereof
10/22/2008CN101290969A Storage node and methods of forming the same, phase change memory device having a storage node and methods of fabricating and operating the same
10/22/2008CN101290802A Self-adaptive and self-calibrating multi-stage non-volatile memory
10/22/2008CN101290801A Memory unit array
10/22/2008CN101290800A Non-volatile semiconductor memory device
10/22/2008CN101290799A Non-volatile memory devices and methods of operating the same
10/22/2008CN100428519C Method for the production of a memory cell, memory cell and memory cell arrangement
10/22/2008CN100428363C Non-volatile storage device and control method thereof
10/22/2008CN100428358C High speed big block data writing method for flash memory
10/22/2008CN100428187C Nonvolatile memory apparatus
10/21/2008US7441090 System and method for updating data sectors in a non-volatile memory using logical block addressing
10/21/2008US7441072 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
10/21/2008US7441067 Cyclic flash memory wear leveling
10/21/2008US7440990 Methods of factoring and modular arithmetic
10/21/2008US7440337 Nonvolatile semiconductor memory apparatus having buffer memory for storing a program and buffering work data
10/21/2008US7440333 Method of determining voltage compensation for flash memory devices
10/21/2008US7440332 Low power multiple bit sense amplifier
10/21/2008US7440331 Verify operation for non-volatile storage using different voltages
10/21/2008US7440329 Floating body cell (FBC) memory device with a sense amplifier for refreshing dummy cells
10/21/2008US7440328 Operation methods for a non-volatile memory cell in an array
10/21/2008US7440327 Non-volatile storage with reduced power consumption during read operations
10/21/2008US7440326 Programming non-volatile memory with improved boosting
10/21/2008US7440325 High-speed verifiable semiconductor memory device
10/21/2008US7440324 Apparatus with alternating read mode
10/21/2008US7440323 Reducing program disturb in non-volatile memory using multiple boosting modes
10/21/2008US7440322 Method and system for flash memory devices
10/21/2008US7440319 Apparatus with segmented bitscan for verification of programming
10/21/2008US7440317 One transistor SOI non-volatile random access memory cell
10/21/2008US7439574 Silicon/oxide/nitride/silicon nonvolatile memory with vertical channels
10/21/2008US7439572 Stacked gate memory cell with erase to gate, array, and method of manufacturing
10/16/2008WO2008124760A2 Non-volatile memory and method for predictive programming
10/16/2008WO2008124380A2 Variable resistance memory with lattice array using enclosing transistors around each memory element
10/16/2008WO2008123548A1 Flotox type eeprom
10/16/2008WO2008123047A1 Nonvolatile memory circuit
10/16/2008WO2008122919A1 A memory cell, a memory array and a method of programming a memory cell
10/16/2008WO2008083221A3 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
10/16/2008WO2008004179A3 Non-volatile memory and-array and method for operating the game
10/16/2008US20080253196 Method and apparatus for charging large capacitances
10/16/2008US20080253195 Semiconductor memory device which includes mos transistor having charge accumulation layer and control gate and data readout method thereof
10/16/2008US20080253194 Flash memory device and program method thereof
10/16/2008US20080253193 Non-Volatile Memory with Predictive Programming
10/16/2008US20080253192 Semiconductor integrated circuit device
10/16/2008US20080253191 Flash memory device and set-up data initialization method
10/16/2008US20080253190 Non-volatile memory device and method of operating the same
10/16/2008US20080253188 Programming method to reduce gate coupling interference for non-volatile memory
10/16/2008US20080253187 Multiple select gate architecture
10/16/2008US20080253186 Bit line structure for a multilevel, dual-sided nonvolatile memory cell array
10/16/2008US20080253185 Non-Volatile Memory and Method with Control Gate Compensation for Source Line Bias Errors
10/16/2008US20080253184 Non volatile memory
10/16/2008US20080253183 Semiconductor memory device
10/16/2008US20080253182 Nand flash memory device and programming method
10/16/2008US20080253181 Method for programming a semiconductor memory device
10/16/2008US20080252734 Card based image manipulation method for camera
10/16/2008US20080251830 Semiconductor storage device and driving method thereof
10/16/2008DE102007019789A1 Verfahren zum Zugreifen auf eine Speicherzelle in einem integrierten Schaltkreis, Verfahren zum Ermitteln eines Satzes von Wortleitungsspannung-Identifikatoren in einem integrierten Schaltkreis, Verfahren zum Klassifizieren von Speicherzellen in einem integrierten Schaltkreis, Verfahren zum Ermitteln einer Wortleitungsspannung zum Zugreifen auf eine Speicherzelle in einem integrierten Schaltkreis und integrierte Schaltkreise A method of accessing a memory cell in an integrated circuit, A method for determining a set of word line voltage identifiers in an integrated circuit, method for classifying memory cells in an integrated circuit, method for determining a word line voltage to access a memory cell in an integrated circuit and integrated circuits
10/16/2008DE102007019320A1 Integrierte Schaltkreise und Verfahren zum Herstellen derselben Integrated circuits and methods for manufacturing the same
10/16/2008DE102006054553B4 Verfahren zum Programmieren einer Speicherzelle und Speicherzellenanordnungen A method for programming a memory cell and memory cell arrays
10/15/2008EP1979936A1 Non-volatile memory cell of a circuit integrated in a semiconductor chip, method for producing it, and use of a non-volatile memory cell
10/15/2008EP1932158A4 Memory with output control
10/15/2008EP1932157A4 Multiple independent serial link memory
10/15/2008EP1929480A4 Daisy chain cascading devices
10/15/2008EP1747560B1 Latched programming of memory and method
10/15/2008EP1640872B1 Data transfer method and system
10/15/2008EP1602109B1 Circuit for fast and accurate memory read operations
10/15/2008CN201134271Y Flash burning wire arranging device and flash burning tool containing the same
10/15/2008CN201134270Y NAND FLASH controller
10/15/2008CN101286696A Booster circuit
10/15/2008CN101286547A Semiconductor structure and its manufacture method
10/15/2008CN101286522A Nonvolatile memory device and method of fabricating the same
10/15/2008CN101286364A Phase-change memorizer 1R1T structure and its driver circuit design method
10/15/2008CN100426510C Channel injection type available once encoding device
10/15/2008CN100426509C Ultraviolet erasing semiconductor memory
10/15/2008CN100426420C Word-line boosting circuit for low-voltage non-volatile memory
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