| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 07/17/2008 | WO2008085255A1 Non-volatile multilevel memory cell programming |
| 07/17/2008 | WO2008085254A1 Non-volatile multilevel memory cell programming |
| 07/17/2008 | WO2008048943A3 Voltage regulator system based on mirror-type amplifiers |
| 07/17/2008 | WO2008038242A3 A secure non-volatile memory device and a method of protecting data therein |
| 07/17/2008 | WO2007123987A3 Nand erase block size trimming apparatus and method |
| 07/17/2008 | US20080170450 Method for testing internal high voltage in nonvolatile semiconductor memory device and related voltage output circuit |
| 07/17/2008 | US20080170443 Flash memory device having a verify data buffer capable of being employed as a program data buffer, and a method thereof |
| 07/17/2008 | US20080170442 Column leakage compensation in a sensing circuit |
| 07/17/2008 | US20080170441 Sense architecture |
| 07/17/2008 | US20080170440 Flash memory device with split string selection line structure |
| 07/17/2008 | US20080170439 Multi-level memory |
| 07/17/2008 | US20080170437 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal |
| 07/17/2008 | US20080170436 Flash memory device with write protection |
| 07/17/2008 | US20080170435 Semiconductor storage device |
| 07/17/2008 | US20080170434 Memory cell programming methods capable of reducing coupling effects |
| 07/17/2008 | US20080170433 Word line drivers in non-volatile memory device and method having a shared power bank and processor-based systems using same |
| 07/17/2008 | US20080170424 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield |
| 07/17/2008 | US20080169457 Phase changeable memory devices including nitrogen and/or silicon |
| 07/17/2008 | DE102008003113A1 ECC-Steuereinheit, Speichersystem und Verfahren zur Korrektur eines Fehlers ECC control unit, storage system and method for correcting an error |
| 07/17/2008 | DE102007060886A1 Verfahren zum Ausbilden eines nicht-flüchtigen Speichers A method of forming a non-volatile memory |
| 07/16/2008 | EP1943652A1 Last-first mode and method for programming of non-volatile memory of nand type with reduced program disturb |
| 07/16/2008 | EP1869709A4 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications |
| 07/16/2008 | EP1683160A4 A method circuit and system for read error detection in a non-volatile memory array |
| 07/16/2008 | CN101223640A High density nand non-volatile memory device |
| 07/16/2008 | CN101221987A Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure |
| 07/16/2008 | CN101221956A Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure |
| 07/16/2008 | CN101221815A Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell |
| 07/16/2008 | CN101221814A Sensitive amplifier used for EEPROM and read circuit constituted of the same |
| 07/16/2008 | CN101221813A Methods of restoring data in flash memory devices and related flash memory device memory systems |
| 07/16/2008 | CN101221812A Flash memory device having multi-page copyback functionality and related block replacement method |
| 07/16/2008 | CN101221811A Multi-bit resistive memory |
| 07/16/2008 | CN101221810A Gated diode nonvolatile memory operation |
| 07/16/2008 | CN101221809A Nand flash memory having c/a pin and flash memory system including the same |
| 07/16/2008 | CN100403452C Method of measuring threshold voltage for a NAND flash memory device |
| 07/16/2008 | CN100403451C Nonvolatile semiconductor storage manufactured for changing erase unit |
| 07/15/2008 | US7400538 NROM memory device with enhanced endurance |
| 07/15/2008 | US7400534 NAND flash memory and data programming method thereof |
| 07/15/2008 | US7400533 Mimicking program verify drain resistance in a memory device |
| 07/15/2008 | US7400532 Programming method to reduce gate coupling interference for non-volatile memory |
| 07/15/2008 | US7400531 Semiconductor integrated circuit device |
| 07/15/2008 | US7400530 Semiconductor memory |
| 07/15/2008 | US7400529 Non-volatile memory cell and non-volatile memory device using said cell |
| 07/15/2008 | US7400528 Intergrated circuit for programming resistive memory cells |
| 07/15/2008 | US7400527 Bit symbol recognition method and structure for multiple bit storage in non-volatile memories |
| 07/10/2008 | WO2008083292A1 Generation of analog voltage using self-biased capacitive feedback stage |
| 07/10/2008 | WO2008083221A2 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages |
| 07/10/2008 | WO2008083214A1 Programming non-volatile memory with reduced program disturb by removing pre-charg dependency on word line data |
| 07/10/2008 | WO2008083196A2 Margined neighbor reading for non-volatile memory read operations including coupling compensation |
| 07/10/2008 | WO2008083162A1 Retention margin program verification |
| 07/10/2008 | WO2008083161A1 Page by page ecc variation in a memory device |
| 07/10/2008 | WO2008083137A1 Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell |
| 07/10/2008 | WO2008083132A2 Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
| 07/10/2008 | WO2008083131A2 Method for programming with initial programming voltage based on trial |
| 07/10/2008 | WO2008083125A1 Flash memory and associated methods |
| 07/10/2008 | WO2008082894A1 Controlling bitline bias voltage |
| 07/10/2008 | WO2008082888A1 Nand flash memory cell array and method with adaptive memory state partitioning |
| 07/10/2008 | WO2008082824A2 Multi-level operation in dual element cells using a supplemental programming level |
| 07/10/2008 | WO2008082591A2 High speed interface for multi-level memory |
| 07/10/2008 | WO2008063972A3 Controlled boosting in non-volatile memory soft programming |
| 07/10/2008 | WO2008063972A2 Controlled boosting in non-volatile memory soft programming |
| 07/10/2008 | WO2008048504A3 Semiconductor memory comprising means for switching between normal and high speed reading mode |
| 07/10/2008 | WO2007062307A3 Method and memory system for legacy hosts |
| 07/10/2008 | US20080168215 Storing Information in a Memory |
| 07/10/2008 | US20080165588 Reset method of non-volatile memory |
| 07/10/2008 | US20080165586 Semiconductor device |
| 07/10/2008 | US20080165585 Erase verify method for nand-type flash memories |
| 07/10/2008 | US20080165584 Flash Memory Array Architecture |
| 07/10/2008 | US20080165583 Non-Volatile Storage Element |
| 07/10/2008 | US20080165581 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control |
| 07/10/2008 | US20080165580 3-level non-volatile semiconductor memory device and method of driving the same |
| 07/10/2008 | US20080165579 Programming method of multi-bit flash memory device for reducing programming error |
| 07/10/2008 | DE19641420B4 Schaltungen zum variablen Einstellen der Schwellenspannung für ein Halbleiterbauteil Circuitry for variably setting the threshold voltage for a semiconductor device |
| 07/10/2008 | DE10338729B4 Magnetspeichervorrichtung mit größerer Referenzzelle A magnetic memory device with a larger reference cell |
| 07/10/2008 | DE102007061406A1 Verfahren zum Betreiben eines nichtflüchtigen Speicherelements, nichtflüchtiges Speicherelement und Speicherkarte A method of operating a nonvolatile memory element, nonvolatile memory element and the memory card |
| 07/10/2008 | DE102004033444B4 Integrierter Speicherschaltungsbaustein Integrated circuit memory block |
| 07/09/2008 | EP1839154A4 System and method of erasing non-volatile recording media |
| 07/09/2008 | CN201084183Y RF card |
| 07/09/2008 | CN201084182Y IC card |
| 07/09/2008 | CN101218651A Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
| 07/09/2008 | CN101218650A Read operation for non-volatile storage that includes compensation for coupling |
| 07/09/2008 | CN100401427C Nonvolatile semiconductor memory device |
| 07/09/2008 | CN100401426C One-time programmable storage device using fuse/anti-fuse and vertical-orientation fuse specific storage unite |
| 07/09/2008 | CN100401420C Fuse circuit |
| 07/09/2008 | CN100401231C Automatic power savings stand-by control device and method for non-volatile memory |
| 07/08/2008 | USRE40423 Multiport RAM with programmable data port configuration |
| 07/08/2008 | US7398425 Information processing apparatus including NAND flash memory, and information processing method for the same |
| 07/08/2008 | US7398331 Peripheral apparatus, firmware updating method thereof for determining whether an error has occurred during the installation of a rewrite operation |
| 07/08/2008 | US7397713 Flash EEprom system |
| 07/08/2008 | US7397707 Compressed event counting technique and application to a flash memory system |
| 07/08/2008 | US7397706 Methods of erasing flash memory devices by applying wordline bias voltages having multiple levels and related flash memory devices |
| 07/08/2008 | US7397705 Method for programming multi-level cell memory array |
| 07/08/2008 | US7397704 Flash memory device and program method thereof |
| 07/08/2008 | US7397703 Non-volatile memory with controlled program/erase |
| 07/08/2008 | US7397702 Read/verify circuit for multilevel memory cells with ramp read voltage, and read/verify method thereof |
| 07/08/2008 | US7397701 Method and apparatus for operating a string of charge trapping memory cells |
| 07/08/2008 | US7397698 Reducing floating gate to floating gate coupling effect |
| 07/08/2008 | US7397697 Multi-bit-per-cell flash EEPROM memory with refresh |
| 07/08/2008 | US7397686 Memory system combining flash EEPROM and FeRAM |
| 07/08/2008 | US7397078 Non-volatile semiconductor memory |
| 07/03/2008 | WO2008079958A1 Interleaved memory program and verify method, device and system |